LT1113
Dual Low Noise,
Precision, JFET Input Op Amp
Features
Description
100% Tested Low Voltage Noise: 6nV/√Hz Max
nn SO-8 Package Standard Pinout
nn Voltage Gain: 1.2 Million Min
nn Offset Voltage: 1.5mV Max
nn Offset Voltage Drift: 15µV/°C Max
nn Input Bias Current, Warmed Up: 450pA Max
nn Gain Bandwidth Product: 5.6MHz Typ
nn Guaranteed Specifications with ± 5V Supplies
nn Guaranteed Matching Specifications
The LT®1113 achieves a new standard of excellence in noise
performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz
noise combined with low current noise and picoampere
bias currents makes the LT1113 an ideal choice for amplifying low level signals from high impedance capacitive
transducers.
nn
Applications
The LT1113 is unconditionally stable for gains of 1 or
more, even with load capacitances up to 1000pF. Other
key features are 0.4mV VOS and a voltage gain of 4 million. Each individual amplifier is 100% tested for voltage
noise, slew rate and gain bandwidth.
Photocurrent Amplifiers
Hydrophone Amplifiers
nn High Sensitivity Piezoelectric Accelerometers
nn Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
nn Two and Three Op Amp Instrumentation Amplifiers
nn Active Filters
The design of the LT1113 has been optimized to achieve
true precision performance with an industry standard
pinout in the S0-8 package. A set of specifications are
provided for ± 5V supplies and a full set of matching specifications are provided to facilitate the use of the LT1113 in
matching dependent applications such as instrumentation
amplifier front ends.
nn
nn
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and C-Load
is a trademark of Linear Technology Corporation. All other trademarks are the property of their
respective owners.
Typical Application
Low Noise Hydrophone Amplifier with DC Servo
2
3
R2 C1*
200Ω
–
40
8
1/2
LT1113
1
+
OUTPUT
C2
0.47µF
4
–5V TO –15V
R8
100M
R7
1M
R6
100k
7
1/2
LT1113
DC OUTPUT ≤ 2.5mV FOR TA < 70°C
OUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20)
C1 ≈ CT ≈ 100pF TO 5000pF; R4C2 > R8CT; *OPTIONAL
+
CT
HYDROPHONE
5V TO 15V
6
R4
1M
5
R5
1M
PERCENT OF UNITS (%)
R3
3.9k
–
R1*
100M
1kHz Input Noise Voltage Distribution
30
VS = ±15V
TA = 25°C
138 S8
276 OP AMPS TESTED
20
10
0
3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8
INPUT VOLTAGE NOISE (nV/√Hz)
1113 TA02
1113 TA01
1113fc
For more information www.linear.com/LT1113
1
LT1113
Absolute Maximum Ratings
(Note 1)
Supply Voltage
–55°C to 105°C.................................................. ± 20V
105°C to 125°C................................................... ±16V
Differential Input Voltage....................................... ± 40V
Input Voltage (Equal to Supply Voltage)................. ± 20V
Output Short Circuit Duration........................... 1 Minute
Storage Temperature Range................... – 65°C to 150°C
Operating Temperature Range
LT1113AC/LT1113C (Note 2)............. – 40°C to 85°C
LT1113AM/LT1113M (OBSOLETE) – 55°C to 125°C
Specified Temperature Range
LT1113AC/LT1113C (Note 3)............. – 40°C to 85°C
LT1113AM/LT1113M (OBSOLETE) – 55°C to 125°C
Lead Temperature (Soldering, 10 sec)................... 300°C
Pin Configuration
TOP VIEW
8 V+
OUT A 1
–IN A 2
+IN A 3
V– 4
TOP VIEW
7 OUT B
A
B
6 –IN B
OUT A 1
5 +IN B
–IN A 2
+IN A 3
N8 PACKAGE
8-LEAD PDIP
V– 4
TJMAX = 150°C, θJA = 130°C/W (N8)
8 V+
7 OUT B
A
B
6 –IN B
5 +IN B
S8 PACKAGE
8-LEAD PLASTIC SO
JB PACKAGE
8-LEAD CERDIP
TJMAX = 160°C, θJA = 100°C/W (J8)
TJMAX = 150°C, θJA = 190°C/W
OBSOLETE PACKAGE
Consider the N8 Package for Alternate Source
Order Information
LEAD FREE FINISH
TAPE AND REEL
PART MARKING
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT1113ACN8#PBF
LT1113CN8#PBF
LT1113ACN8#TRPBF
1113ACN8
8-Lead PDIP
–40°C to 85°C
LT1113CN8#TRPBF
1113CN8
8-Lead PDIP
–40°C to 85°C
LT1113ACS8#PBF
LT1113CS8#TRPBF
1113
8-Lead Plastic SO
–40°C to 85°C
LT1113AMJ8#PBF
LT1113AMJ8#TRPBF
1113AMJ8
8-Lead CERDIP
–55°C to 125°C
LT1113MJ8#PBF
LT1113MJ8#TRPBF
1113MJ8
8-Lead CERDIP
–55°C to 125°C
OBSOLETE PACKAGE
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on nonstandard lead based finish parts.
For more information on lead free part markings, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
2
1113fc
For more information www.linear.com/LT1113
LT1113
Electrical Characteristics
VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
LT1113AM/AC
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
LT1113M/C
TYP
MAX
0.40
0.45
1.5
1.7
MIN
TYP
MAX
0.50
0.55
1.8
2.0
UNITS
VOS
Input Offset Voltage
IOS
Input Offset Current
Warmed Up (Note 5)
30
100
35
150
pA
IB
Input Bias Current
Warmed Up (Note 5)
300
450
320
480
pA
6.0
VS = ±5V
mV
mV
Input Noise Voltage
0.1Hz to 10Hz
2.4
2.4
µVP-P
Input Noise Voltage Density
fO = 10Hz
fO = 1000Hz
17
4.5
17
4.5
nV/√Hz
nV/√Hz
in
Input Noise Current Density
fO = 10Hz, fO = 1000Hz (Note 6)
10
10
RIN
Input Resistance
Differential Mode
Common Mode
1011
1011
1010
1011
1011
1010
Ω
Ω
Ω
14
27
14
27
pF
pF
en
CIN
Input Capacitance
VCM
Input Voltage Range (Note 7)
CMRR
Common Mode Rejection Ratio
VCM = –10V to 8V
VCM = 8V to 11V
VS = ±5V
VCM = –10V to 13V
6.0
fA/√Hz
13.0
–10.5
13.5
–11.0
13.0
–10.5
13.5
–11.0
V
V
85
98
82
95
dB
VS = ±15V, VCM = 0V, TA = 25°C, unless otherwise noted.
LT1113AM/AC
LT1113M/C
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MIN
TYP
PSRR
Power Supply Rejection Ratio
VS = ± 4.5V to ± 20V
86
100
83
98
AVOL
Large-Signal Voltage Gain
VO = ±12V, RL = 10k
1200
4800
1000
4500
V/mV
VOUT
Output Voltage Swing
RL = 10k
RL = 1k
SR
Slew Rate
GBW
tS
dB
4000
500
3000
V/mV
±13.8
±13.0
±13.0
±11.5
±13.8
±13.0
V
V
RL ≥ 2k (Note 9)
2.3
3.9
2.3
3.9
V/µs
Gain Bandwidth Product
fO = 100kHz
4.0
5.6
4.0
5.6
MHz
Settling Time
0.01%, AV = + 1, RL = 1k,
CL ≤ 1000pF, 10V Step
4.2
4.2
µs
Channel Separation
fO = 10Hz, VO = ±10V, RL = 1k
130
126
dB
VS = ±5V
+
UNITS
600
Supply Current per Amplifier
∆VOS
MAX
±13.5
±12.0
VO = ±10V, RL = 1k
IS
MAX
Offset Voltage Match
5.3
6.25
5.3
6.50
mA
5.3
6.20
5.3
6.45
mA
0.8
2.5
0.8
3.3
mV
10
80
10
120
pA
∆IB
Noninverting Bias Current Match Warmed Up (Note 5)
∆CMRR
Common Mode Rejection Match (Note 11)
81
94
78
94
dB
∆PSRR
Power Supply Rejection Match
82
95
80
95
dB
(Note 11)
1113fc
For more information www.linear.com/LT1113
3
LT1113
Electrical
Characteristics
The l denotes specifications which apply over the temperature range
0°C ≤ TA ≤ 70°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 12)
LT1113AC
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
LT1113C
TYP
MAX
TYP
MAX
VS = ± 5V
l
l
0.6
0.7
2.1
2.3
MIN
0.7
0.8
2.5
2.7
UNITS
mV
mV
(Note 8)
l
7
15
8
20
µV/°C
55
450
pA
700
1600
pA
VOS
Input Offset Voltage
∆VOS
∆Temp
Average Input Offset
Voltage Drift
IOS
Input Offset Current
l
50
350
IB
Input Bias Current
l
600
1200
VCM
Input Voltage Range
l
l
12.9
–10.0
13.4
–10.8
12.9
–10.0
13.4
–10.8
V
V
CMRR
Common Mode Rejection Ratio
VCM = –10V to 12.9V
l
81
97
79
94
dB
PSRR
Power Supply Rejection Ratio
VS = ± 4.5V to ±20V
l
83
99
81
97
AVOL
Large-Signal Voltage Gain
VO = ±12V, RL = 10k
VO = ±10V, RL = 1k
l
l
900
500
3600
2600
800
400
3400
2400
V/mV
V/mV
VOUT
Output Voltage Swing
RL = 10k
RL = 1k
l
l
±13.2
±11.7
±13.5
±12.7
±12.7
±11.3
±13.5
±12.7
V
V
SR
Slew Rate
RL ≥ 2k (Note 9)
l
2.1
3.7
1.7
3.7
V/µs
GBW
Gain Bandwidth Product
fO = 100kHz
l
3.2
4.5
3.2
4.5
MHz
IS
Supply Current per Amplifier
VS = ± 5V
l
l
5.3
5.3
∆VOS
Offset Voltage Match
l
∆IB+
Noninverting Bias Current Match
l
∆CMRR
Common Mode Rejection Match
(Note 11)
l
76
93
74
93
dB
∆PSRR
Power Supply Rejection Match
(Note 11)
l
79
93
77
93
dB
6.35
6.30
5.3
5.3
0.9
3.5
30
300
dB
6.55
6.50
mA
mA
0.9
4.5
mV
35
400
pA
The l denotes specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 10)
LT1113AC
SYMBOL PARAMETER
CONDITIONS (Note 4)
MIN
LT1113C
TYP
MAX
l
l
0.7
0.8
7
MIN
TYP
MAX
UNITS
2.4
2.6
0.8
0.9
2.8
3.0
mV
mV
15
8
20
µV/°C
VOS
Input Offset Voltage
∆VOS
∆Temp
Average Input Offset
Voltage Drift
l
IOS
Input Offset Current
l
80
700
90
1000
pA
IB
Input Bias Current
l
1750
3000
1800
5000
pA
VCM
Input Voltage Range
l
l
12.6
–10.0
13.0
–10.5
12.6
–10.0
13.0
–10.5
V
V
CMRR
Common Mode Rejection Ratio
VCM = –10V to 12.6V
l
80
96
78
93
dB
VS = ± 5V
PSRR
Power Supply Rejection Ratio
VS = ± 4.5V to ±20V
l
81
98
79
96
AVOL
Large-Signal Voltage Gain
VO = ±12V, RL = 10k
VO = ±10V, RL = 1k
l
l
850
400
3300
2200
750
300
3000
2000
V/mV
V/mV
VOUT
Output Voltage Swing
RL = 10k
RL = 1k
l
l
±13.0
±11.5
±12.5
±12.0
±12.5
±11.0
±12.5
±12.0
V
V
SR
Slew Rate
RL ≥ 2k
l
2.0
3.5
1.6
3.5
V/µs
GBW
Gain Bandwidth Product
fO = 100kHz
l
2.9
4.3
2.9
4.3
MHz
4
dB
1113fc
For more information www.linear.com/LT1113
LT1113
Electrical Characteristics
The l denotes specifications which apply over the temperature range
–40°C ≤ TA ≤ 85°C. VS = ±15V, VCM = 0V, unless otherwise noted. (Note 10)
LT1113AC
SYMBOL PARAMETER
Supply Current per Amplifier
IS
∆VOS
CONDITIONS (Note 4)
VS = ± 5V
Offset Voltage Match
MIN
LT1113C
TYP
MAX
l
l
5.30
5.25
l
MIN
TYP
MAX
UNITS
6.35
6.30
5.30
5.25
6.55
6.50
mA
mA
1.0
4.4
1.0
5.1
mV
50
600
55
900
∆IB
+
Noninverting Bias Current Match
∆CMRR
Common Mode Rejection Match
(Note 11)
l
76
93
73
93
dB
∆PSRR
Power Supply Rejection Match
(Note 11)
l
77
92
75
92
dB
l
pA
The l denotes specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C. VS = ±15V, VCM = 0V,
unless otherwise noted. (Note 12)
LT1113AM
SYMBOL PARAMETER
Input Offset Voltage
VOS
∆VOS
∆Temp
Average Input Offset
Voltage Drift
CONDITIONS (Note 4)
VS = ± 5V
(Note 8)
MIN
LT1113M
l
TYP
0.8
0.8
5
MAX
2.7
2.8
12
l
l
MIN
TYP
0.9
0.9
8
MAX
3.3
3.4
15
UNITS
mV
mV
µV/°C
IOS
Input Offset Current
l
0.8
15
1.0
25
nA
IB
Input Bias Current
l
25
50
27
70
nA
VCM
Input Voltage Range
l
l
CMRR
Common Mode Rejection Ratio
VCM = –10V to 12.6V
PSRR
Power Supply Rejection Ratio
AVOL
Large-Signal Voltage Gain
VOUT
Output Voltage Swing
SR
l
12.6
–10.0
79
13.0
–10.4
95
12.6
–10.0
77
13.0
–10.4
92
V
V
dB
VS = ± 4.5V to ±20V
l
80
97
78
95
dB
l
l
Slew Rate
VO = ±12V, RL = 10k
VO = ±10V, RL = 1k
RL = 10k
RL = 1k
RL ≥ 2k (Note 9)
l
800
400
±13.0
±11.5
1.9
2700
1500
±12.5
±12.0
3.3
700
300
±12.5
±11.0
1.6
2500
1000
±12.5
±12.0
3.3
GBW
Gain Bandwidth Product
fO = 100kHz
l
2.2
IS
Supply Current Per Amplifier
VS = ± 5V
l
l
∆VOS
Offset Voltage Match
l
l
l
3.4
2.2
5.30
5.25
1.0
6.35
6.30
5.0
1.8
12
V/mV
V/mV
V
V
V/µs
3.4
MHz
5.30
5.25
1.0
6.55
6.50
5.5
2.0
20
mA
mA
mV
∆IB
+
Noninverting Bias Current Match
∆CMRR
Common Mode Rejection Match
(Note 11)
l
75
92
73
92
dB
∆PSRR
Power Supply Rejection Match
(Note 11)
l
76
91
74
91
dB
l
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT1113C is guaranteed functional over the Operating
Temperature Range of –40°C to 85°C. The LT1113M is guaranteed
functional over the Operating Temperature Range of – 55°C to 125°C.
Note 3: The LT1113C is guaranteed to meet specified performance from
0°C to 70°C. The LT1113C is designed, characterized and expected to
meet specified performance from –40°C to 85°C but is not tested or QA
sampled at these temperatures. For guaranteed I grade parts, consult the
nA
factory. The LT1113M is guaranteed to meet specified performance from
–55°C to 125°C.
Note 4: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers, i.e., out of 100 LT1113s (200 op
amps) typically 120 op amps will be better than the indicated specification.
Note 5: Warmed-up IB and IOS readings are extrapolated to a chip temperature
of 50°C from 25°C measurements and 50°C characterization data.
Note 6: Current noise is calculated from the formula:
in = (2qIB)1/2
where q = 1.6 • 10 –19 coulomb. The noise of source resistors up to 200M
swamps the contribution of current noise.
1113fc
For more information www.linear.com/LT1113
5
LT1113
Electrical Characteristics
Note 7: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 2.3mV
(A grade) to 2.8mV (C grade).
Note 8: This parameter is not 100% tested.
Note 9: Slew rate is measured in AV = –1; input signal is ±7.5V, output
measured at ±2.5V.
Note 10: The LT1113 is designed, characterized and expected to meet
these extended temperature limits, but is not tested at –40°C and 85°C.
Guaranteed I grade parts are available. Consult factory.
Note 11: ∆CMRR and ∆PSRR are defined as follows:
(1) CMRR and PSRR are measured in µV/V on the individual amplifiers.
(2) The difference is calculated between the matching sides in µV/V.
(3) The result is converted to dB.
Note 12: The LT1113 is measured in an automated tester in less than one
second after application of power. Depending on the package used, power
dissipation, heat sinking, and air flow conditions, the fully warmed-up chip
temperature can be 10°C to 50°C higher than the ambient temperature.
Typical Performance Characteristics
1kHz Output Voltage Noise
Density vs Source Resistance
2
6
4
TIME (SEC)
8
10
1k
VN
–
RSOURCE
100
10
VN
1
100
SOURCE
RESISTANCE
ONLY
1k
TA = 25°C
VS = ±15V
1
8
7
6
30n
3n
1n
IB, VCM = 0V
IB, VCM = 10V
100p
4
3
2
1
100 125
1113 G04
10
1k
100
FREQUENCY (Hz)
30p
10p
3p
10k
Input Bias and Offset Currents
Over the Common Mode Range
400
VS = ±15V
10n
300p
5
1
1113 G03
100n
VS = ±15V
INPUT BIAS AND OFFSET CURRENTS (A)
VOLTAGE NOISE (AT1kHz)(nV/√Hz)
TYPICAL
1/f CORNER
120Hz
Input Bias and Offset Currents vs
Chip Temperature
10
6
10
1113 G02
Voltage Noise vs
Chip Temperature
0
–75 –50 –25 0
25 50 75
TEMPERATURE (°C)
TA = 25°C
VS = ±15V
10k 100k 1M 10M 100M 1G
SOURCE RESISTANCE (Ω)
1113 G01
9
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
+
INPUT BIAS AND OFFSET CURRENTS (pA)
0
Voltage Noise vs Frequency
100
10k
TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/√Hz)
VOLTAGE NOISE (1µV/DIV)
0.1Hz to 10Hz Voltage Noise
IOS, VCM = 0V
IOS, VCM = 10V
1p
–75 –50 –25 0
25 50 75
TEMPERATURE (°C)
100 125
1113 G05
300
TA = 25°C
VS = ±15V
NOT WARMED UP
200
BIAS CURRENT
100
OFFSET CURRENT
0
–15
–10
–5
0
5
10
COMMON MODE RANGE (V)
15
1113 G06
1113fc
For more information www.linear.com/LT1113
LT1113
Typical Performance Characteristics
120
V + = 5V TO 20V
–1.0
–1.5
–2.0
4.0
V – = –5V TO –20V
3.5
3.0
2.5
V – +2.0
–60
–20
60
100
20
TEMPERATURE (°C)
120
TA = 25°C
VS = ±15V
100
80
60
40
20
0
140
1k
10k
100k
1M
FREQUENCY (Hz)
+PSRR
60
180
20
1M
1k
10k 100k
FREQUENCY (Hz)
10M
Gain and Phase Shift vs
Frequency
50
VS = ±15V
VO = ±10V, RL = 1k
VO = ±12V, RL = 10k
9
8
VOLTAGE GAIN (V/µV)
20
100
7
6
RL =10k
5
4
RL = 1k
3
60
TA = 25°C
VS = ±15V
CL = 10pF
40
2
80
30
100
20
120
PHASE
10
140
GAIN
0
160
1
–20
0.01
1
10k
100
FREQUENCY (Hz)
1M
100M
0
–75 –50 –25 0
25 50 75
CHIP TEMPERATURE (°C)
1113 G10
–10
100 125
0.1
1
10
FREQUENCY (MHz)
1113 G12
1113 G11
Small-Signal Transient Response
180
100
Large-Signal Transient Response
Supply Current vs Supply Voltage
SUPPLY CURRENT PER AMPLIFIER (mA)
5V/DIV
20mV/DIV
6
1µs/DIV
AV = 1
CL = 10pF
VS = ±15V, ±5V
2µs/DIV
1113 G13
AV = 1
CL = 10pF
VS = ±15V
1113 G14
25°C
–55°C
5
125°C
4
0
±10
±15
±5
SUPPLY VOLTAGE (V)
±20
1113 G15
1113fc
For more information www.linear.com/LT1113
7
PHASE SHIFT (DEG)
60
10
1113 G09
10
TA = 25°C
VS = ±15V
100
–PSRR
40
Voltage Gain vs
Chip Temperature
Voltage Gain vs Frequency
VOLTAGE GAIN (dB)
80
1113 G08
1113 G07
140
TA = 25°C
100
0
10M
VOLTAGE GAIN (dB)
COMMON MODE LIMIT (V)
REFERRED TO POWER SUPPLY
–0.5
POWER SUPPLY REJECTION RATIO (dB)
COMMON-MODE REJECTION RATIO (dB)
V + –0
Power Supply Rejection Ratio
vs Frequency
Common Mode Rejection Ratio vs
Frequency
Common Mode Limit vs
Temperature
LT1113
Typical Performance Characteristics
50
40
–55°C
OVERSHOOT (%)
– 1.4
–1.6
VS = ±5V TO ±20V
1.4
VS = ±15V
TA = 25°C
RL ≥ 10k
VO = 100mVP-P
AV = +10, RF = 10k, CF = 20pF
1.2
1.0
0.8
–55°C
0.6
25°C
SLEW RATE (V/µs)
–1.0
30
20
10
0
0.1
1
100
1000
10
CAPACITIVE LOAD (pF)
1113 G17
Distribution of Offset Voltage Drift
with Temperature (J8)
Distribution of Offset Voltage Drift
with Temperature (N8, S8)
40
78 S8
100 N8
356 OP AMPS
PERCENT OF UNITS
30
20
10
20
10
6
0
–25 –20 –15 –10 –5
8
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
AV = 100
0.01
AV = 10
0.001
0.0001
20
AV = 1
NOISE FLOOR
100
1k
FREQUENCY (Hz)
10k 20k
1113 • G22
2
4
1
2
5
0
100 125
VS = ±15V
TA = 25°C
400
S8 PACKAGE
N8 PACKAGE
300
200
J8 PACKAGE
100
10 15 20 25
IN STILL AIR (S8 PACKAGE
SOLDERED ONTO BOARD)
0
1
2
3
5
4
TIME AFTER POWER ON (MINUTES)
THD and Noise vs Frequency for
Inverting Gain
1
0.1
0.01
AV = –10
AV = –1
100
1k
FREQUENCY (Hz)
120
100
80
60
VS = ±15V
RL = 1k
VO = 10VP-P
TA = 25°C
40
20
NOISE FLOOR
0.0001
20
LIMITED BY
THERMAL INTERACTION
140
AV = –100
0.001
Channel Separation vs Frequency
160
ZL = 2k||15pF
VO = 20VP-P
AV = –1, –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
10k 20k
1113 G23
6
1113 G21
1113 G20
TOTAL HARMONIC DISTORTION + NOISE (%)
TOTAL HARMONIC DISTORTION + NOISE (%)
0.1
GBW
OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µV/°C)
THD and Noise vs Frequency for
Noninverting Gain
ZL = 2k||15pF
VO = 20VP-P
AV = +1, +10, +100
MEASUREMENT BANDWIDTH
= 10Hz TO 80kHz
6
3
0
0
1113 G19
1
8
Warm-Up Drift
CHANGE IN OFFSET VOLTAGE (µV)
75 J8
150 OP AMPS
4
SLEW RATE
4
500
VS = ±15V
VS = ±15V
2
10
1113 G18
40
0
5
0
–75 –50 –25 0
25 50 75
TEMPERATURE (°C)
10000
1113 G16
0
–12 –10 –8 –6 –4 –2
12
AV = 10
125°C
V – +0.4
–10 –8 –6 –4 –2 0 2 4 6 8 10
ISINK
ISOURCE
OUTPUT CURRENT (mA)
30
6
AV = 1
CHANNEL SEPARATION (dB)
OUTPUT VOLTAGE SWING (V)
125°C
25°C
–1.2
PERCENT OF UNITS
Slew Rate and Gain Bandwidth
Product vs Temperature
Capacitive Load Handling
0
10
100
LIMITED BY
PIN-TO-PIN
CAPACITANCE
1k
10k 100k
FREQUENCY (Hz)
1M
10M
1113 G24
*See LT1115 data sheet for definition of CCIF testing.
8
1113fc
For more information www.linear.com/LT1113
GAIN BANDWIDTH PRODUCT (fO = 100kHz)(MHz)
V + – 0.8
Output Voltage Swing vs
Load Current
LT1113
Typical Performance Characteristics
ZL = 2k||15pF, fO = 1kHz
AV = +1, +10, +100
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
0.1
AV = 100
0.01
AV = 10
0.001
AV = 1
NOISE FLOOR
0.0001
0.3
10
1
OUTPUT SWING (VP-P)
30
1
CCIF IMD Test (Equal Amplitude
Tones at 13kHz, 14kHz)*
INTERMODULATION DISTORTION (AT 1kHz)(%)
1
THD and Noise vs Output
Amplitude for Inverting Gain
TOTAL HARMONIC DISTORTION + NOISE (%)
TOTAL HARMONIC DISTORTION + NOISE (%)
THD and Noise vs Output
Amplitude for Noninverting Gain
ZL = 2k||15pF, fO = 1kHz
AV = –1, –10, –100
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
0.1
AV = –100
0.01
AV = –10
0.001
AV = –1
NOISE FLOOR
0.0001
0.3
10
1
OUTPUT SWING (VP-P)
1113 • G25
30
1113 • G26
0.1
VS = ±15V
RL = 2k
TA = 25°C
0.01
AV = ±10
0.001
0.0001
20m
0.1
1
OUTPUT SWING (VP-P)
10
30
1113 • G27
Applications Information
The LT1113 dual in the plastic and ceramic DIP packages
are pin compatible with and directly replace such JFET op
amps as the OPA2111 and OPA2604 with improved noise
performance. Being the lowest noise dual JFET op amp
available to date, the LT1113 can replace many bipolar op
amps that are used in amplifying low level signals from
high impedance transducers. The best bipolar op amps
will eventually loose out to the LT1113 when transducer
impedance increases due to higher current noise. The low
voltage noise of the LT1113 allows it to surpass every
dual and most single JFET op amps available. For the best
performance versus area available anywhere, the LT1113
is offered in the narrow SO-8 surface mount package with
standard pinout and no degradation in performance.
INPUT NOISE VOLTAGE (nV√Hz)
The low voltage and current noise offered by the LT1113
makes it useful in a wide range of applications, especially
where high impedance, capacitive transducers are used
1k
LT1124*
such as hydrophones, precision accelerometers and photo
diodes. The total output noise in such a system is the gain
LT1113*
CS
RS
times the RMS sum of the op amp input referred voltage
100
SOURCE
RESISTANCE
S=R
noise,= 2R
the
thermal noise of the transducer, and the op
LT1124†
VO
* PLUS RESISTOR
† PLUS RESISTOR | | 1000pF CAPACITOR
amp bias current noise times the transducer impedance.
RS CS
Vn = AV √Vn2(OP AMP) + 4kTR + 2q IB • R2
Figure 1 shows total input voltage noise versus source
†
LT1113
10
resistance. In a low source resistance ( R1 OR R2
CS
RS
TRANSDUCER
CB
OUTPUT
+
RB
CB = CF ||CS
RB = RF ||RS
dQ
Q = CV;
= I = C dV
dt
dt
TRANSDUCER
1113 • F02
Figure 2. Noninverting and Inverting Gain Configurations
(2qIB RTRANS) will eventually dominate the total noise. At
these high source resistances, the LT1113 will out perform
the lowest noise bipolar op amp due to the inherently low
current noise of FET input op amps. Clearly, the LT1113
will extend the range of high impedance transducers
that can be used for high signal to noise ratios. This
makes the LT1113 the best choice for high impedance,
capacitive transducers.
The high input impedance JFET front end makes the LT1113
suitable in applications where very high charge sensitivity
is required. Figure 2 illustrates the LT1113 in its inverting
and noninverting modes of operation. A charge amplifier
is shown in the inverting mode example; here the gain
depends on the principal of charge conservation at the
input of the LT1113. The charge across the transducer
capacitance, CS, is transferred to the feedback capacitor
CF, resulting in a change in voltage, dV, equal to dQ/CF.
The gain therefore is 1 + CF/CS. For unity gain, CF should
equal the transducer capacitance plus the input capacitance
of the LT1113 and RF should equal RS. In the noninverting mode example, the transducer current is converted
to a change in voltage by the transducer capacitance;
this voltage is then buffered by the LT1113 with a gain of
1 + R1/R2. A DC path is provided by RS, which is either
the transducer impedance or an external resistor. Since
RS is usually several orders of magnitude greater than the
10
parallel combination of R1 and R2, RB is added to balance
the DC offset caused by the noninverting input bias current
and RS. The input bias currents, although small at room
temperature, can create significant errors over increasing
temperature, especially with transducer resistances of up
to 100M or more. The optimum value for RB is determined
by equating the thermal noise (4kTRS) to the current noise
(2qIB) times RS2. Solving for RS results in RB = RS = 2VT/IB
kT
VT = = 26mV at 25°C
q
A parallel capacitor, CB, is used to cancel the phase shift
caused by the op amp input capacitance and RB.
Reduced Power Supply Operation
The LT1113 can be operated from ±5V supplies for lower
power dissipation resulting in lower IB and noise at the
expense of reduced dynamic range. To illustrate this benefit,
let’s look at the following example:
An LT1113CS8 operates at an ambient temperature of 25°C
with ±15V supplies, dissipating 318mW of power (typical
supply current = 10.6mA for the dual). The SO-8 package
has a θJA of 190°C/W, which results in a die temperature
increase of 60.4°C or a room temperature die operating
temperature of 85.4°C. At ±5V supplies, the die tempera-
1113fc
For more information www.linear.com/LT1113
LT1113
Applications Information
INPUT: ±5.2V Sine Wave
LT1113 Output
OPA2111 Output
Figure 3. Voltage Follower with Input Exceeding the Common Mode Range ( VS = ±5V)
ture increases by only one third of the previous amount
or 20.1°C resulting in a typical die operating temperature
of only 45.1°C. A 40 degree reduction of die temperature
is achieved at the expense of a 20V reduction in dynamic
range. If no DC correction resistor is used at the input, the
input referred offset will be the input bias current at the
operating die temperature times the transducer resistance
(refer to Input Bias and Offset Currents vs Chip Temperature
graph in Typical Performance Characteristics section). A
100mV input VOS is the result of a 1nA IB (at 85°C) dropped
across a 100M transducer resistance; at ±5V supplies, the
input offset is only 28mV (IB at 45°C is 280pA). Careful
selection of a DC correction resistor (RB) will reduce the
IR errors due to IB by an order of magnitude. A further
reduction of IR errors can be achieved by using a DC servo
circuit shown in the applications section of this data sheet.
The DC servo has the advantage of reducing a wide range
of IR errors to the millivolt level over a wide temperature
variation. The preservation of dynamic range is especially
important when reduced supplies are used, since input bias
currents can exceed the nanoamp level for die temperatures
over 85°C.
To take full advantage of a wide input common mode range,
the LT1113 was designed to eliminate phase reversal. Referring to the photographs shown in Figure 3, the LT1113
is shown operating in the follower mode (AV = +1) at ±5V
supplies with the input swinging ±5.2V. The output of the
LT1113 clips cleanly and recovers with no phase reversal,
unlike the competition as shown by the last photograph.
This has the benefit of preventing lock-up in servo systems
and minimizing distortion components. The effect of input
and output overdrive on one amplifier has no effect on the
other, as each amplifier is biased independently.
Advantages of Matched Dual Op Amps
In many applications the performance of a system
depends on the matching between two operational amplifiers rather than the individual characteristics of the two
op amps. Two or three op amp instrumentation amplifiers,
tracking voltage references and low drift active filters
are some of the circuits requiring matching between two
op amps.
The well-known triple op amp configuration in Figure 4
illustrates these concepts. Output offset is a function of
the difference between the two halves of the LT1113.
This error cancellation principle holds for a considerable
number of input referred parameters in addition to
offset voltage and bias current. Input bias current will
be the average of the two noninverting input currents
(IB+). The difference between these two currents (∆IB+)
is the offset current of the instrumentation amplifier.
Common mode and power supply rejections will be
dependent only on the match between the two amplifiers
(assuming perfect resistor matching).
1113fc
For more information www.linear.com/LT1113
11
LT1113
Applications Information
Typical performance of the instrumentation amplifier:
15V
IN –
3
8
1/2
LT1113
2
IC1
–
4
+
Input offset voltage = 0.8mV
R6
10k
R4
1k
1
Input bias current = 320pA
C1
50pF
R1
1k
Input offset current = 10pA
Input resistance = 1011Ω
–15V
R2
200Ω
6
IN +
R3
1k
–
1/2
LT1113
5 + IC1
7
2
Input noise = 3.4µVP-P
–
1/2
LT1113
3 + IC2
1
OUTPUT
High Speed Operation
CL
The low noise performance of the LT1113 was achieved
by making the input JFET differential pair large to maximize the first stage gain. Increasing the JFET geometry
also increases the parasitic gate capacitance, which if left
unchecked, can result in increased overshoot and ringing.
When the feedback around the op amp is resistive (RF),
a pole will be created with RF, the source resistance and
capacitance (RS,CS), and the amplifier input capacitance
(CIN = 27pF). In closed loop gain configurations and
with RS and RF in the kilohm range (Figure 5), this pole
can create excess phase shift and even oscillation.
A small capacitor (CF) in parallel with RF eliminates this
problem. With RS(CS + CIN) = RFCF, the effect of the feedback pole is completely removed.
R5
1k
R7
10k
GAIN = 100
BANDWIDTH = 400kHz
INPUT REFERRED NOISE = 6.6nV/√Hz AT 1kHz
WIDEBAND NOISE DC TO 400kHz = 6.6 µVRMS
CL ≤ 0.01µF
1113 • F04
Figure 4. Three Op Amp Instrumentation Amplifier
The concepts of common mode and power supply
rejection ratio match (∆CMRR and ∆PSRR) are best demonstrated with a numerical example:
Assume CMRRA = +50µV/V or 86dB,
CF
and CMRRB = + 39µV/V or 88dB,
then ∆CMRR = 11µV/V or 99dB;
RF
if CMRRB = –39µV/V which is still 88dB,
–
then ∆CMRR = 89µV/V or 81dB
Clearly the LT1113, by specifying and guaranteeing all of
these matching parameters, can significantly improve the
performance of matching-dependent circuits.
RS
CS
+
CIN
OUTPUT
1113 • F05
Figure 5.
12
1113fc
For more information www.linear.com/LT1113
LT1113
Typical Applications
Accelerometer Amplifier with DC Servo
C1
1250pF
R1
100M
R2
18k
R3
2k
C2
2µF
–
7
1/2 LT1113
+
5V TO 15V
ACCELEROMETER
B & K MODEL 4381
OR EQUIVALENT
2
–
3
+
6
R4
20M
5
R5
20M
*PICOCOULOMBS
**g = EARTH’S GRAVITATIONAL CONSTANT
C3
2µF
8
1/2 LT1113
R4C2 = R5C3 > R1 (1 + R2/R3) C1
OUTPUT = 0.8mV/pC* = 8.0mV/g**
DC OUTPUT ≤ 2.7mV
OUTPUT NOISE = 6nV/√Hz AT 1kHz
1
OUTPUT
4
1113 • TA03
–5V TO –15V
Paralleling Amplifiers to Reduce Voltage Noise
3
2
+
A1
1/2 LT1113
1
1k
–
51Ω
1k
10k
3
2
15V
+
A2
1/2 LT1113
1
1k
–
1k
51Ω
6
51Ω
+
+
1/2 LT1113
7
OUTPUT
4
8
An
1/2 LT1113
–
5
8
–15V
15V
5
6
–
4
–15V
1k
7
1k
1. ASSUME VOLTAGE NOISE OF LT1113 AND 51Ω SOURCE RESISTOR = 4.6nV/√Hz
2. GAIN WITH n LT1113s IN PARALLEL = n • 200
3. OUTPUT NOISE = √n • 200 • 4.6nV/√Hz
OUTPUT NOISE 4.6
4. INPUT REFERRED NOISE =
=
nV/√Hz
n • 200
√n
5. NOISE CURRENT AT INPUT INCREASES √n TIMES
9µV
6. IF n = 5, GAIN = 1000, BANDWIDTH = 1MHz, RMS NOISE, DC TO 1MHz =
= 4µV
√5
1113 • TA04
1113fc
For more information www.linear.com/LT1113
13
LT1113
Typical Applications
Low Noise Light Sensor with DC Servo
C1
2pF
R1
1M
D2
1N914
2
–
3
+
1/2 LT1113
CD
1
OUTPUT
C2
0.022µF
+V
R5
1k
7
1/2 LT1113
4
R4
1k
+
2N3904
HAMAMATSU
S1336-5BK
8
R3
1k
–
D1
1N914
R2
100k
6
5
–V
R2C2 > C1R1
CD = PARASITIC PHOTODIODE CAPACITANCE
VO = 100mV/µWATT FOR 200nm WAVE LENGTH
330mV/µWATT FOR 633nm WAVE LENGTH
V–
1113 • TA05
10Hz Fourth Order Chebyshev Lowpass Filter (0.01dB Ripple)
R2
237k
R5
154k
C1
33nF
VIN
R1
237k
R3
249k
C2
100nF
C3
10nF
15V
2
3
–
8
1/2 LT1113
+
4
–15V
1
R4
154k
R6
249k
C4
330nF
6
–
5
+
1/2 LT1113
TYPICAL OFFSET ≈ 0.8mV
1% TOLERANCES
FOR VIN = 10VP-P, VOUT = –121dB AT f > 330Hz
= – 6dB AT f = 16.3Hz
LOWER RESISTOR VALUES WILL RESULT IN LOWER THERMAL NOISE AND LARGER CAPACITORS
14
7
VOUT
1113 • TA06
1113fc
For more information www.linear.com/LT1113
LT1113
Package Description
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
J8 Package
8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.015 – 0.060
(0.381 – 1.524)
0.008 – 0.018
(0.203 – 0.457)
0.005
(0.127)
MIN
0.200
(5.080)
MAX
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.300 BSC
(0.762 BSC)
0.405
(10.287)
MAX
8
6
7
5
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
0° – 15°
1
0.045 – 0.065
(1.143 – 1.651)
0.014 – 0.026
(0.360 – 0.660)
0.100
(2.54)
BSC
2
3
4
J8 1298
0.125
3.175
MIN
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
OBSOLETE PACKAGE
N Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510 Rev I)
.300 – .325
(7.620 – 8.255)
.008 – .015
(0.203 – 0.381)
(
+.035
.325 –.015
+0.889
8.255
–0.381
)
.045 – .065
(1.143 – 1.651)
.065
(1.651)
TYP
.400*
(10.160)
MAX
.130 ±.005
(3.302 ±0.127)
8
7
6
5
1
2
3
4
.255 ±.015*
(6.477 ±0.381)
.100
(2.54)
BSC
.120
.020
(3.048)
MIN
(0.508)
MIN
.018 ±.003
N8 REV I 0711
(0.457 ±0.076)
NOTE:
1. DIMENSIONS ARE
INCHES
MILLIMETERS
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)
1113fc
For more information www.linear.com/LT1113
15
LT1113
Package Description
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610 Rev G)
.189 – .197
(4.801 – 5.004)
NOTE 3
.045 ±.005
.050 BSC
8
.245
MIN
.160 ±.005
.010 – .020
× 45°
(0.254 – 0.508)
NOTE:
1. DIMENSIONS IN
.053 – .069
(1.346 – 1.752)
0°– 8° TYP
.014 – .019
(0.355 – 0.483)
TYP
INCHES
(MILLIMETERS)
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
4. PIN 1 CAN BE BEVEL EDGE OR A DIMPLE
16
5
.150 – .157
(3.810 – 3.988)
NOTE 3
1
RECOMMENDED SOLDER PAD LAYOUT
.016 – .050
(0.406 – 1.270)
6
.228 – .244
(5.791 – 6.197)
.030 ±.005
TYP
.008 – .010
(0.203 – 0.254)
7
2
3
4
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
SO8 REV G 0212
1113fc
For more information www.linear.com/LT1113
LT1113
Revision History
(Revision history begins at Rev C)
REV
DATE
DESCRIPTION
C
09/15
Updated Order Information table format.
PAGE NUMBER
Updated package drawings.
2
15, 16
1113fc
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection
of its circuits
as described
herein will not infringe on existing patent rights.
For more
information
www.linear.com/LT1113
17
LT1113
Typical Application
Light Balance Detection Circuit
R1
1M
C1
2pF TO 8pF
I1
PD1
VOUT = 1M • (I1 – I2)
PD1,PD2 = HAMAMATSU S1336-5BK
WHEN EQUAL LIGHT ENTERS PHOTODIODES, VOUT < 3mV.
–
I2
VOUT
1/2 LT1113
+
PD2
1113 • TA07
Unity Gain Buffer with Extended Load Capacitance Drive Capability
R2
1k
C1
–
1/2 LT1113
VIN
R1
33Ω
VOUT
+
CL
C1 = CL ≤ 0.1µF
OUTPUT SHORT-CIRCUIT CURRENT
(~30mA) WILL LIMIT THE RATE AT WHICH THE
VOLTAGE CAN CHANGE ACROSS LARGE CAPACITORS
dV
(I = C )
dt
1113 • TA08
Related Parts
PART NUMBER
DESCRIPTION
COMMENTS
LT1028
Single Low Noise Precision Op Amp
VNOISE = 1.1nV/√Hz Max
LT1124
Dual Low Noise Precision Op Amp
VNOISE = 4.2nV/√Hz Max
LT1169
Dual Low Noise Precision JFET Op Amp
10pA IB
C-Load™ Op Amp
LT1462
Dual Picoamp IB
LT1464
Dual Picoamp IB C-Load Op Amp
IB = 2pA Max, 10000pF C-Load, IS = 200µA
LT1792
Single Low Noise Precision Op Amp
Single LT1113
LT1793
Single Low Noise Precision Op Amp
Single LT1169
18 Linear Technology Corporation
IB = 2pA Max, 10000pF C-Load, IS = 45µA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
For more information www.linear.com/LT1113
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com/LT1113
1113fc
LT 0915 REV C • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1993
工商网监
湘ICP备2023018690号
