LT1209CS#TRPBF

LT1208/LT1209 Dual and Quad 45MHz, 400V/µs Op Amps U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 45MHz Gain-Bandwidth 400V/µs Slew Rate Unity-Gain Stable 7V/mV DC Gain, RL = 500Ω 3mV Maximum Input Offset Voltage ±12V Minimum Output Swing into 500Ω Wide Supply Range: ±2.5V to ±15V 7mA Supply Current per Amplifier 90ns Settling Time to 0.1%, 10V Step Drives All Capacitive Loads The LT1208/LT1209 are dual and quad very high speed operational amplifiers with excellent DC performance. The LT1208/LT1209 feature reduced input offset voltage and higher DC gain than devices with comparable bandwidth and slew rate. Each amplifier is a single gain stage with outstanding settling characteristics. The fast settling time makes the circuit an ideal choice for data acquisition systems. Each output is capable of driving a 500Ω load to ±12V with ±15V supplies and a 150Ω load to ±3V on ±5V supplies. The amplifiers are also capable of driving large capacitive loads which make them useful in buffer or cable driver applications. UO APPLICATI ■ ■ ■ ■ ■ ■ S The LT1208/LT1209 are members of a family of fast, high performance amplifiers that employ Linear Technology Corporation’s advanced bipolar complementary processing. Wideband Amplifiers Buffers Active Filters Video and RF Amplification Cable Drivers Data Acquisition Systems UO TYPICAL APPLICATI 1MHz, 4th Order Butterworth Filter Inverter Pulse Response 909Ω 1.1k 909Ω 2.67k VIN 220pF – 47pF 1/2 LT1208 + 1.1k 2.21k 470pF – 22pF 1/2 LT1208 + VOUT 1208/09 TA01 1208/09 TA02 1 LT1208/LT1209 W W W AXI U U ABSOLUTE RATI GS Total Supply Voltage (V + to V –) .............................. 36V Differential Input Voltage ........................................ ±6V Input Voltage ........................................................... ±VS Output Short-Circuit Duration (Note 1) ........... Indefinite Operating Temperature Range LT1208C/LT1209C .......................... – 40°C to 85°C Maximum Junction Temperature Plastic Package ............................................. 150°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C W U U PACKAGE/ORDER I FOR ATIO TOP VIEW OUT A 1 8 V+ –IN A 2 7 OUT B A +IN A 3 V – B 4 –IN B 6 ORDER PART NUMBER OUT A 1 –IN A 2 LT1208CN8 TOP VIEW –IN A 2 +IN A 3 14 OUT D A D +IN B 5 –IN B 6 OUT B 7 11 B C CONTACT FACTORY FOR MILITARY/883B PARTS ORDER PART NUMBER 8 OUT A 1 –IN A 2 V– +IN A 3 LT1209CN D A +IN B 5 –IN B 6 –IN C OUT C CONDITIONS VOS Input Offset Voltage VS = ±5V (Note 2) 0°C to 70°C VS = ±15V (Note 2) 0°C to 70°C 2 LT1209CS B C 12 +IN C 11 –IN C 10 OUT C 9 NC VS = ±15V, TA = 25°C, RL = 1k, VCM = 0V, unless otherwise noted. PARAMETER Input Noise Voltage Input Noise Current 15 –IN D TJMAX = 150°C, θJA = 100°C/W SYMBOL Input Bias Current ORDER PART NUMBER S PACKAGE 16-LEAD PLASTIC SOIC ELECTRICAL CHARACTERISTICS Input VOS Drift Input Offset Current 1208 13 V – OUT B 7 TJMAX = 150°C, θJA = 70°C/W en in S8 PART MARKING 14 +IN D V+ 4 N PACKAGE 14-LEAD PLASTIC DIP IB +IN B 16 OUT D NC 8 IOS 5 LT1208CS8 TOP VIEW 10 +IN C 9 –IN B TJMAX = 150°C, θJA = 150°C/W 13 –IN D 12 +IN D V+ 4 OUT B 6 S8 PACKAGE 8-LEAD PLASTIC SOIC TJMAX = 150°C, θJA = 100°C/W OUT A 1 7 B V– 4 N8 PACKAGE 8-LEAD PLASTIC DIP 8 V+ A +IN A 3 +IN B 5 ORDER PART NUMBER TOP VIEW VS = ±5V and VS = ±15V 0°C to 70°C VS = ±5V and VS = ±15V 0°C to 70°C f = 10kHz f = 10kHz MIN TYP MAX UNITS 0.5 3.0 4.0 5.0 6.0 mV mV mV mV µV/°C nA nA µA µA nV/√Hz pA/√Hz ● 1.0 ● 25 100 ● 4 ● 22 1.1 400 600 8 9 LT1208/LT1209 ELECTRICAL CHARACTERISTICS VS = ±15V, TA = 25°C, RL = 1k, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP RIN Input Resistance VCM = ±12V Differential 20 CIN CMRR Input Capacitance Common-Mode Rejection Ratio 40 250 2 98 PSRR Power Supply Rejection Ratio Input Voltage Range AVOL Large-Signal Voltage Gain VOUT Output Swing IOUT Output Current SR Slew Rate GBW Full Power Bandwidth Gain-Bandwidth tr, tf Rise Time, Fall Time Overshoot Propagation Delay ts Settling Time Differential Gain Differential Phase RO IS Output Resistance Crosstalk Supply Current VS = ±15V, VCM = ±12V; VS = ±5V, VCM = ±2.5V, 0°C to 70°C VS = ±5V to ±15V 0°C to 70°C VS = ±15V VS = ±5V VS = ±15V, VOUT = ±10V, RL = 500Ω 0°C to 70°C VS = ± 5V, VOUT = ±2.5V, RL = 500Ω 0°C to 70°C VS = ± 5V, VOUT = ±2.5V, RL = 150Ω VS = ±15V, RL = 500Ω, 0°C to 70°C VS = ±5V, RL = 150Ω, 0°C to 70°C VS = ±15V, VOUT = ±12V, 0°C to 70°C VS = ± 5V, VOUT = ± 3V, 0°C to 70°C VS = ±15V, AVCL = – 2, (Note 3) 0°C to 70°C VS = ±5V, AVCL = – 2, (Note 3) 0°C to 70°C 10V Peak, (Note 4) VS = ±15V, f = 1MHz VS = ±5V, f = 1MHz VS = ±15V, AVCL = 1, 10% to 90%, 0.1V VS = ± 5V, AVCL = 1, 10% to 90%, 0.1V VS = ± 15V, AVCL = 1, 0.1V VS = ± 5V, AVCL = 1, 0.1V VS = ± 15V, 50% VIN to 50%VOUT VS = ± 5V, 50% VIN to 50%VOUT VS = ± 15V, 10V Step, VS = ±5V, 5V Step, 0.1% f = 3.58MHz, RL = 150Ω f = 3.58MHz, RL = 1k f = 3.58MHz, RL = 150Ω f = 3.58MHz, RL = 1k AVCL = 1, f = 1MHz VOUT = ±10V, RL = 500Ω Each Amplifier, VS = ±5V and VS = ±15V 0°C to 70°C The ● denotes the specifications which apply over the full operating temperature range. Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely. Note 2: Input offset voltage is tested with automated test equipment and is exclusive of warm-up drift. ● ● ● ● ● ● ● ● ● ● 86 83 76 75 ±12 ±2.5 3.3 2.5 2.5 2.0 12.0 3.0 24 20 250 200 150 130 MAX MΩ kΩ pF dB dB dB dB V V V/mV V/mV V/mV V/mV V/mV ±V ±V mA mA V/µs V/µs V/µs V/µs MHz MHz MHz ns ns % % ns ns ns 84 ±13 ±3 7 7 3 13.3 3.3 40 40 400 250 6.4 45 34 5 7 30 20 5 7 90 1.30 0.09 1.8 0.1 2.5 –100 7 ● UNITS – 94 9 10.5 % % Deg Deg Ω dB mA mA Note 3: Slew rate is measured in a gain of –2. For ±15V supplies measure between ±10V on the output with ±6V on the input. For ±5V supplies measure between ±2V on the output with ±1.75V on the input. Note 4: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVP. 3 LT1208/LT1209 U W TYPICAL PERFOR A CE CHARACTERISTICS Input Common-Mode Range vs Supply Voltage Supply Current vs Supply Voltage and Temperature 20 10 SUPPLY CURRENT (mA) 15 10 +VCM 125°C –VCM 5 8 OUTPUT VOLTAGE SWING (V) MAGNITUDE OF INPUT VOLTAGE (V) 20 12 TA = 25°C ∆VOS < 1mV 25°C 6 –55°C 4 2 0 0 0 5 10 15 SUPPLY VOLTAGE (±V) 20 15 10 VS = ±5V 100 1k LOAD RESISTANCE (Ω) 10k 4.5 TA = 25°C 90 2 4.0 3.5 4.00 3.75 3.50 –50 –25 25 75 0 50 TEMPERATURE (°C) 100 125 1208/09 G07 15 10 100 1k LOAD RESISTANCE (Ω) Input Noise Spectral Density 10000 100 VS = ±15V TA = 25°C AV = 101 RS = 100k VS = ±5V 50 45 40 SOURCE SINK 35 30 25 –50 10k 1208/09 G06 INPUT VOLTAGE NOISE (nV/√Hz) OUTPUT SHORT-CIRCUIT CURRENT (mA) 4.25 VS = ±5V –25 25 75 0 50 TEMPERATURE (°C) 100 125 1208/09 G08 in 1000 10 en 100 1 10 10 100 1k 10k FREQUENCY (Hz) 0.1 100k 1208/09 G09 INPUT CURRENT NOISE (pA/√Hz) 4.50 70 50 –10 –5 0 5 10 INPUT COMMON-MODE VOLTAGE (V) 55 2 VS = ±15V 80 60 Output Short-Circuit Current vs Temperature 5.00 4 Open-Loop Gain vs Resistive Load 1208/09 G05 Input Bias Current vs Temperature 20 100 1208/09 G04 VS = ±15V IB+ + IB– IB = 5 10 15 SUPPLY VOLTAGE (±V) 1208/09 G03 VS = ±15V TA = 25°C I + + IB – IB = B 3.0 –15 0 4.75 5 0 OPEN-LOOP GAIN (dB) INPUT BIAS CURRENT (µA) OUTPUT VOLTAGE SWING (VP-P) VS = ±15V 10 –VSW 20 5.0 TA = 25°C ∆VOS = 30mV 5 +VSW 10 Input Bias Current vs Input Common-Mode Voltage 30 20 15 1208/09 G02 Output Voltage Swing vs Resistive Load 25 TA = 25°C RL = 500Ω ∆VOS = 30mV 0 5 10 15 SUPPLY VOLTAGE (±V) 0 1208/09 G01 INPUT BIAS CURRENT (µA) Output Voltage Swing vs Supply Voltage LT1208/LT1209 U W TYPICAL PERFOR A CE CHARACTERISTICS Power Supply Rejection Ratio vs Frequency Crosstalk vs Frequency 100 CROSSTALK (dB) –50 –60 –70 VS = ±5V RL = 500Ω –80 –90 VS = ±15V RL = 1k –100 –110 –120 100k 1M 10M FREQUENCY (Hz) 120 VS = ±15V TA = 25°C 80 +PSRR 60 –PSRR 40 20 0 100 100M 1k 10k 100k 1M FREQUENCY (Hz) Voltage Gain and Phase vs Frequency 100 VS = ±5V 40 VS = ±5V 40 VS = ±15V 1k 6 AV = 1 AV = 1 –4 –6 0 100M AV = –1 AV = –1 VS = ±15V TA = 25°C 10mV SETTLING 4 C = 100pF 2 C = 50pF 0 –2 C=0 –4 C = 500pF –6 C = 1000pF –8 25 0 75 100 50 SETTLING TIME (ns) 1M 125 Slew Rate vs Temperature 500 VS = ±15V 450 0.1 46 45 44 100M 1208/09 G16 42 –50 400 +SR 350 300 250 43 1M 10M FREQUENCY (Hz) VS = ±15V AV = –2 –SR SLEW RATE (V/µs) GAIN-BANDWIDTH (MHz) 47 1 100M 1208/09 G15 Gain-Bandwidth vs Temperature VS = ±15V TA = 25°C AV = +1 10M FREQUENCY (Hz) 1208/09 G14 48 100k VS = ±15V TA = 25°C AV = –1 –10 –10 100 100M 10M Frequency Response vs Capacitive Load 6 –8 10M 100k 1M FREQUENCY (Hz) 10k 1208/09 G12 8 –2 Closed-Loop Output Impedance vs Frequency 0.01 10k 20 8 1208/09 B13 10 40 0 100M 0 TA = 25°C 1M 10k 100k FREQUENCY (Hz) 60 10 2 20 0 1k 80 10 4 OUTPUT SWING (V) 60 PHASE MARGIN (DEG) VOLTAGE GAIN (dB) 80 VS = ±15V –20 100 100 Output Swing vs Settling Time 80 20 VS = ±15V TA = 25°C 1208/09 G11 1208/09 G10 60 10M VOLTAGE MAGNITUDE (dB) –40 POWER SUPPLY REJECTION RATIO (dB) TA = 25°C VIN = 0dBm AV = 1 –30 COMMON-MODE REJECTION RATIO (dB) –20 OUTPUT IMPEDANCE (Ω) Common-Mode Rejection Ratio vs Frequency –25 25 75 0 50 TEMPERATURE (°C) 100 125 1208/09 G17 200 –50 –25 25 75 0 50 TEMPERATURE (°C) 100 125 1208/09 G18 5 LT1208/LT1209 U W TYPICAL PERFOR A CE CHARACTERISTICS Gain-Bandwidth and Phase Margin vs Supply Voltage 62 TA = 25°C TA = 25°C AV = –1 60 55 PHASE MARGIN 58 45 56 40 54 35 52 50 30 500 GAIN BANDWIDTH SLEW RATE (V/µs) 50 PHASE MARGIN (DEG) GAIN-BANDWIDTH (MHz) 0.01 600 –SR 400 TOTAL HARMONIC DISTORTION (%) 60 Total Harmonic Distortion vs Frequency Slew Rate vs Supply Voltage +SR 300 200 25 48 20 46 TA = 25°C VOUT = 3VRMS RL = 500Ω AV = –1 AV = 1 0 10 5 15 SUPPLY VOLTAGE (±V) 20 100 10 5 15 SUPPLY VOLTAGE (±V) 0 100 1k 10k FREQUENCY (Hz) 100k 1208/09 G21 1208/09 G19 1208/09 G20 U W U UO APPLICATI 20 0.001 10 S I FOR ATIO Layout and Passive Components Capacitive Loading As with any high speed operational amplifier, care must be taken in board layout in order to obtain maximum performance. Key layout issues include: use of a ground plane, minimization of stray capacitance at the input pins, short lead lengths, RF-quality bypass capacitors located close to the device (typically 0.01µF to 0.1µF), and use of low ESR bypass capacitors for high drive current applications (typically 1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is required, although low profile sockets can provide reasonable performance up to 50MHz. For more details see Design Note 50. The parallel combination of the feedback resistor and gain setting resistor on the inverting input combine with the input capacitance to form a pole which can cause peaking. If feedback resistors greater than 5k are used, a parallel capacitor of value The LT1208/LT1209 amplifiers are stable with capacitive loads. This is accomplished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases, both the bandwidth and phase margin decrease so there will be peaking in the frequency domain and in the transient response. The photo of the small-signal response with 1000pF load shows 50% peaking. The large-signal response with a 10,000pF load shows the output slew rate being limited by the short-circuit current. To reduce peaking with capacitive loads, insert a small decoupling resistor between the output and the load, and add a capacitor between the output and inverting input to provide an AC feedback path. Coaxial cable can be driven directly, but for best pulse fidelity the cable should be doubly terminated with a resistor in series with the output. CF ≥ RG × CIN/RF should be used to cancel the input pole and optimize dynamic performance. For unity-gain applications where a large feedback resistor is used, CF should be greater than or equal to CIN. 6 LT1208/LT1209 U W U UO APPLICATI S I FOR ATIO caused by a second pole beyond the unity-gain crossover. This is reflected in the 50° phase margin and shows up as overshoot in the unity-gain small-signal transient response. Higher noise gain configurations exhibit less overshoot as seen in the inverting gain of one response. Small-Signal Capacitive Loading AV = –1 CL = 1000pF 1208/09 AI01 The large-signal response in both inverting and noninverting gain show symmetrical slewing characteristics. Normally the noninverting response has a much faster rising edge due to the rapid change in input commonmode voltage which affects the tail current of the input differential pair. Slew enhancement circuitry has been added to the LT1208/LT1209 so that the falling edge slew rate is balanced. Large-Signal Capacitive Loading Small-Signal Transient Response AV = 1 CL = 10,000pF 1208/09 AI02 AV = 1 1208/09 AI03 Input Considerations Small-Signal Transient Response Resistors in series with the inputs are recommended for the LT1208/LT1209 in applications where the differential input voltage exceeds ±6V continuously or on a transient basis. An example would be in noninverting configurations with high input slew rates or when driving heavy capacitive loads. The use of balanced source resistance at each input is recommended for applications where DC accuracy must be maximized. Transient Response The LT1208/LT1209 gain-bandwidth is 45MHz when measured at 100kHz. The actual frequency response in unitygain is considerably higher than 45MHz due to peaking AV = –1 1208/09 AI04 7 LT1208/LT1209 U W U UO APPLICATI S I FOR ATIO Power Dissipation Large-Signal Transient Response The LT1208/LT1209 combine high speed and large output current drive in small packages. Because of the wide supply voltage range, it is possible to exceed the maximum junction temperature under certain conditions. Maximum junction temperature (TJ) is calculated from the ambient temperature (TA) and power dissipation (PD) as follows: AV = 1 1208/09 AI04 Large-Signal Transient Response LT1208CN8: LT1208CS8: LT1209CN: LT1209CS: TJ = TA + (PD × 100°C/W) TJ = TA + (PD × 150°C/W) TJ = TA + (PD × 70°C/W) TJ = TA + (PD × 100°C/W) Maximum power dissipation occurs at the maximum supply current and when the output voltage is at 1/2 of either supply voltage (or the maximum swing if less than 1/2 supply voltage). For each amplifier PDMAX is as follows: PDMAX = (V + – V –)(ISMAX) + (0.5V+)2 RL Example: LT1208 in S8 at 70°C, VS = ±10V, RL = 500Ω PDMAX = (20V)(10.5mA) + AV = –1 (5V)2 = 260mW 500Ω 1208/09 AI06 TJ = 70°C + (2 × 260mW)(150°C/W) = 148°C Low Voltage Operation DAC Current-to-Voltage Converter The LT1208/LT1209 are functional at room temperature with only 3V of total supply voltage. Under this condition, however, the undistorted output swing is only 0.8VP-P . A more realistic condition is operation at ±2.5V supplies (or 5V and ground). Under these conditions, at room temperature, the typical input common-mode range is 1.9V to –1.3V (for a VOS change of 1mV), and a 5MHz, 2VP-P sine wave can be faithfully reproduced. With 5V total supply voltage the gain-bandwidth is reduced to 26MHz and the slew rate is reduced to 135V/µs. The wide bandwidth, high slew rate and fast settling time of the LT1208/LT1209 make them well-suited for currentto-voltage conversion after current output D/A converters. A typical application with a DAC-08 type converter (fullscale output of 2mA) uses a 5k feedback resistor. A 7pF compensation capacitor across the feedback resistor is used to null the pole at the inverting input caused by the DAC output capacitance. The combination of the LT1208/ LT1209 and DAC settles to less than 40mV (1LSB) in 140ns for a 10V step. 8 LT1208/LT1209 UO TYPICAL APPLICATI S Cable Driving DAC Current-to-Voltage Converter 7pF + VIN R3 75Ω 1/2 LT1208 5k VOUT – DAC-08 TYPE 1/2 LT1208 VOUT R2 1k + 0.1µF R4 75Ω R1 1k – 75Ω CABLE 1208/09 TA06 5k 1 LSB SETTLING = 140ns 1208/09 TA04 Instrumentation Amplifier R5 220Ω R1 10k R2 1k R3 1k – 1/2 LT1208 – VIN AV = R4 10k – 1/2 LT1208 + + R4 1+ 1 R3 2 VOUT + ( R2R1 + R3R4 ) + R2R5+ R3 = 102 TRIM R5 FOR GAIN TRIM R1 FOR COMMON-MODE REJECTION BW = 430kHz 1208/09 TA03 Full-Wave Rectifier 1N4148 1k VIN – 1/2 LT1208 + 1k 1N4148 1k 500Ω – 1/2 LT1208 1k VOUT + 1208/09 TA05 9 LT1208/LT1209 W W SI PLIFIED SCHE ATIC V+ BIAS 1 +IN –IN BIAS 2 OUT V– 1208/09 SS U PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. N8 Package 8-Lead Plastic DIP 0.300 – 0.320 (7.620 – 8.128) 0.045 – 0.065 (1.143 – 1.651) ( 0.130 ± 0.005 (3.302 ± 0.127) 8 7 6 +0.025 0.325 –0.015 0.250 ± 0.010 (6.350 ± 0.254) 0.125 (3.175) MIN 0.045 ± 0.015 (1.143 ± 0.381) ) 0.100 ± 0.010 (2.540 ± 0.254) 0.020 (0.508) MIN 1 2 0.010 – 0.020 × 45° (0.254 – 0.508) 0.018 ± 0.003 (0.457 ± 0.076) N8 0392 0.189 – 0.197 (4.801 – 5.004) 8 0.053 – 0.069 (1.346 – 1.752) 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) BSC 6 5 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157 (3.810 – 3.988) 1 10 7 0.004 – 0.010 (0.101 – 0.254) 0.008 – 0.010 (0.203 – 0.254) 0°– 8° TYP 4 3 S8 Package 8-Lead Plastic SOIC 0.016 – 0.050 0.406 – 1.270 5 0.065 (1.651) TYP 0.009 – 0.015 (0.229 – 0.381) +0.635 8.255 –0.381 0.400 (10.160) MAX 2 3 4 SO8 0392 LT1208/LT1209 U PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. N Package 14-Lead Plastic DIP 0.770 (19.558) MAX 14 13 12 11 10 9 8 1 2 3 4 5 6 7 0.260 ± 0.010 (6.604 ± 0.254) 0.300 – 0.325 (7.620 – 8.255) 0.045 – 0.065 (1.143 – 1.651) 0.130 ± 0.005 (3.302 ± 0.127) 0.015 (0.380) MIN 0.065 (1.651) TYP 0.009 – 0.015 (0.229 – 0.381) +0.025 0.325 –0.015 ( 8.255 +0.635 –0.381 ) 0.125 (3.175) MIN 0.075 ± 0.015 (1.905 ± 0.381) 0.018 ± 0.003 (0.457 ± 0.076) 0.100 ± 0.010 (2.540 ± 0.254) N14 0392 S Package 16-Lead Plastic SOIC 0.386 – 0.394* (9.804 – 10.008) 16 15 14 13 12 11 10 9 0.150 – 0.157* (3.810 – 3.988) 0.228 – 0.244 (5.791 – 6.197) 0.010 – 0.020 × 45° (0.254 – 0.508) 1 2 3 4 5 6 7 0.004 – 0.010 (0.101 – 0.254) 0.008 – 0.010 (0.203 – 0.254) 0° – 8° TYP 0.016 – 0.050 0.406 – 1.270 8 0.053 – 0.069 (1.346 – 1.752) 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) TYP SO16 0392 *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm). Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1208/LT1209 U.S. Area Sales Offices NORTHEAST REGION Linear Technology Corporation One Oxford Valley 2300 E. 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Iidabashi, Chiyoda-Ku Tokyo, 102 Japan Phone: 81-3-3237-7891 FAX: 81-3-3237-8010 World Headquarters Linear Technology Corporation 1630 McCarthy Blvd. Milpitas, CA 95035-7487 Phone: (408) 432-1900 FAX: (408) 434-0507 03/10/93 12 Linear Technology Corporation LT/GP 0493 10K REV 0 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977  LINEAR TECHNOLOGY CORPORATION 1993