LT1225
Very High Speed
Operational Amplifier
U
DESCRIPTIO
FEATURES
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Gain of 5 Stable
150MHz Gain Bandwidth
400V/µs Slew Rate
20V/mV DC Gain, RL = 500Ω
1mV Maximum Input Offset Voltage
±12V Minimum Output Swing into 500Ω
Wide Supply Range: ± 2.5V to ±15V
7mA Supply Current
90ns Settling Time to 0.1%, 10V Step
Drives All Capacitive Loads
The LT1225 is a very high speed operational amplifier with
excellent DC performance. The LT1225 features reduced
input offset voltage and higher DC gain than devices with
comparable bandwidth and slew rate. The circuit is a
single gain stage with outstanding settling characteristics.
The fast settling time makes the circuit an ideal choice for
data acquisition systems. The output is capable of driving
a 500Ω load to ±12V with ±15V supplies and a 150Ω load
to ± 3V on ± 5V supplies. The circuit is also capable of
driving large capacitive loads which makes it useful in
buffer or cable driver applications.
UO
APPLICATI
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The LT1225 is a member of a family of fast, high performance amplifiers that employ Linear Technology
Corporation’s advanced bipolar complementary
processing.
Wideband Amplifiers
Buffers
Active Filters
Video and RF Amplification
Cable Drivers
Data Acquisition Systems
UO
TYPICAL APPLICATI
Gain of 5 Pulse Response
20MHz,AV = 50 Instrumentation Amplifier
+
LT1225
–
1k
+
250Ω
200pF
VIN
–
10k
1k
1k
250Ω
1k
+
LT1225
VOUT
–
10k
–
LT1225 TA02
LT1225
+
LT1225 TA01
1
LT1225
PACKAGE/ORDER I FOR ATIO
U
W W
W
Total Supply Voltage (V + to V –) .............................. 36V
Differential Input Voltage ......................................... ±6V
Input Voltage ............................................................±VS
Output Short Circuit Duration (Note 1) ............ Indefinite
Operating Temperature Range
LT1225C ................................................ 0°C to 70°C
Maximum Junction Temperature
Plastic Package .............................................. 150°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................. 300°C
ELECTRICAL CHARACTERISTICS
U
RATI GS
W
AXI U
U
ABSOLUTE
ORDER PART
NUMBER
TOP VIEW
NULL
1
8
NULL
–IN
2
7
V+
+IN
3
6
OUT
V–
4
5
NC
LT1225CN8
LT1225CS8
N8 PACKAGE
S8 PACKAGE
8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC
S8 PART MARKING
1225
LT1225 PO01
TJ MAX = 15O°C, θJA = 130°C/ W (N8)
TJ MAX = 15O°C, θJA = 220°C/ W (S8)
VS = ±15V, TA = 25°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
IOS
Input Offset Current
IB
Input Bias Current
en
Input Noise Voltage
f = 10kHz
in
Input Noise Current
f = 10kHz
RIN
Input Resistance
VCM = ±12V
Differential
CIN
Input Capacitance
Input Voltage Range +
MIN
TYP
MAX
UNITS
0.5
1.0
mV
100
400
nA
4
8
µA
7.5
nV/√Hz
1.5
pA/√Hz
24
40
70
MΩ
kΩ
2
pF
12
14
V
Input Voltage Range –
–13
–12
V
CMRR
Common-Mode Rejection Ratio
VCM = ±12V
94
115
dB
PSRR
Power Supply Rejection Ratio
VS = ±5V to ±15V
86
95
dB
AVOL
Large Signal Voltage Gain
VOUT = ±10V, RL = 500Ω
12.5
20
V/mV
VOUT
Output Swing
RL = 500Ω
±12.0
±13.3
IOUT
Output Current
VOUT = ±12V
24
40
mA
SR
Slew Rate
(Note 3)
250
400
V/µs
Full Power Bandwidth
10V Peak, (Note 4)
6.4
MHz
GBW
Gain Bandwidth
f = 1MHz
150
MHz
tr, tf
Rise Time, Fall Time
AVCL = 5, 10% to 90%, 0.1V
7
Overshoot
AVCL = 5, 0.1V
20
%
Propagation Delay
50% VIN to 50% VOUT
7
ns
Settling Time
10V Step, 0.1%, AV = – 5
90
ns
Differential Gain
f = 3.58MHz, AV = 5, RL = 150Ω
1.0
%
Differential Phase
f = 3.58MHz, AV = 5, RL = 150Ω
1.7
Deg
RO
Output Resistance
AVCL = 5, f = 1MHz
4.5
IS
Supply Current
ts
2
7
V
ns
Ω
9
mA
LT1225
ELECTRICAL CHARACTERISTICS VS = ±5V, TA = 25°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
(Note 2)
IOS
Input Offset Current
IB
Input Bias Current
MIN
Input Voltage Range +
TYP
MAX
UNITS
1.0
2.0
mV
100
400
nA
4
8
µA
2.5
4
Input Voltage Range –
V
–3
– 2.5
V
CMRR
Common-Mode Rejection Ratio
VCM = ±2.5V
94
115
dB
AVOL
Large-Signal Voltage Gain
VOUT = ±2.5V, RL = 500Ω
VOUT = ±2.5V, RL = 150Ω
10
15
13
V/mV
V/mV
VOUT
Output Voltage
RL = 500Ω
RL = 150Ω
±3.0
±3.0
±3.7
±3.3
IOUT
Output Current
VOUT = ±3V
20
40
mA
SR
Slew Rate
(Note 3)
250
V/µs
Full Power Bandwidth
3V Peak, (Note 4)
13.3
MHz
GBW
Gain Bandwidth
f = 1MHz
100
MHz
tr, tf
Rise Time, Fall Time
AVCL = 5, 10% to 90%, 0.1V
9
ns
Overshoot
AVCL = 5, 0.1V
10
%
Propagation Delay
50% VIN to 50% VOUT
9
ns
ts
Settling Time
– 2.5V to 2.5V, 0.1%, AV = – 4
70
IS
Supply Current
V
V
ns
7
ELECTRICAL CHARACTERISTICS
9
mA
0°C ≤ TA ≤ 70°C, VCM = 0V unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
VOS
Input Offset Voltage
VS = ±15V, (Note 2)
VS = ±5V, (Note 2)
MIN
Input VOS Drift
TYP
MAX
UNITS
0.5
1.0
1.5
2.5
mV
mV
µV/°C
10
IOS
Input Offset Current
VS = ±15V and VS = ± 5V
IB
Input Bias Current
CMRR
Common-Mode Rejection Ratio
VS = ±15V and VS = ± 5V
VS = ±15V, VCM = ±12V and VS = ± 5V, VCM = ± 2.5V
93
100
600
nA
4
9
µA
115
dB
PSRR
Power Supply Rejection Ratio
VS = ±5V to ±15V
85
95
AVOL
Large Signal Voltage Gain
VS = ±15V, VOUT = ±10V, RL = 500Ω
VS = ±5V, VOUT = ±2.5V, RL = 500Ω
10
8
12.5
10
V/mV
V/mV
VOUT
Output Swing
VS = ±15V, RL = 500Ω
VS = ±5V, RL = 500Ω or 150Ω
±12.0
±3.0
±13.3
±3.3
V
V
IOUT
Output Current
VS = ±15V, VOUT = ±12V
VS = ±5V, VOUT = ±3V
24
20
40
40
SR
Slew Rate
VS = ±15V, (Note 3)
250
400
IS
Supply Current
VS = ±15V and VS = ± 5V
Note 1: A heat sink may be required to keep the junction temperature
below absolute maximum when the output is shorted indefinitely.
Note 2: Input offset voltage is tested with automated test equipment
in 10VP-P
1MHz
+
100pF
VIN1
–
RIN
VIN2
LT1225
VOUT
+
RIN
VINn
1.5k
LT1225 TA05
RIN =
nRF
4
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights.
LT1225 TA06
7
LT1225
W
W
SI PLIFIED SCHE ATIC
V+
7
NULL
1
8
BIAS 1
3
+IN
2 –IN
BIAS 2
6
V–
OUT
4
LT1224 • TA10
U
PACKAGE DESCRIPTIO
Dimensions in inches (millimeters) unless otherwise noted.
N8 Package
8-Lead Plastic DIP
0.300 – 0.320
(7.620 – 8.128)
0.045 – 0.065
(1.143 – 1.651)
0.130 ± 0.005
(3.302 ± 0.127)
8
7
+0.025
0.325 –0.015
+0.635
8.255
–0.381
0.100 ± 0.010
(2.540 ± 0.254)
0.125
(3.175)
MIN
0.020
(0.508)
MIN
1
2
0.010 – 0.020
× 45°
(0.254 – 0.508)
N8 0392
0.189 – 0.197
(4.801 – 5.004)
8
0.053 – 0.069
(1.346 – 1.752)
7
6
5
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0.014 – 0.019
(0.355 – 0.483)
0.050
(1.270)
BSC
0.228 – 0.244
(5.791 – 6.197)
0.150 – 0.157
(3.810 – 3.988)
1
8
4
3
0.018 ± 0.003
(0.457 ± 0.076)
S8 Package
8-Lead Plastic SOIC
0°– 8° TYP
5
0.250 ± 0.010
(6.350 ± 0.254)
0.045 ± 0.015
(1.143 ± 0.381)
)
0.016 – 0.050
0.406 – 1.270
6
0.065
(1.651)
TYP
0.009 – 0.015
(0.229 – 0.381)
(
0.400
(10.160)
MAX
Linear Technology Corporation
2
3
4
SO8 0392
LT/GP 1092 5K REV A
1630 McCarthy Blvd., Milpitas, CA 95035-7487
(408) 432-1900 ● FAX: (408) 434-0507 ● TELEX: 499-3977
LINEAR TECHNOLOGY CORPORATION 1992
