LT3758/LT3758A
High Input Voltage,
Boost, Flyback, SEPIC and
Inverting Controller
DESCRIPTION
FEATURES
Wide Input Voltage Range: 5.5V to 100V
n Positive or Negative Output Voltage Programming
with a Single Feedback Pin
n Current Mode Control Provides Excellent Transient
Response
n Programmable Operating Frequency (100kHz to
1MHz) with One External Resistor
n Synchronizable to an External Clock
n Low Shutdown Current < 1µA
n Internal 7.2V Low Dropout Voltage Regulator
n Programmable Input Undervoltage Lockout with
Hysteresis
n Programmable Soft-Start
n Small 10-Lead DFN (3mm × 3mm) and
MSOPE Packages
n AEC-Q100 Qualification Is in Progress
The LT®3758/LT3758A are wide input range, current
mode, DC/DC controllers which are capable of generating
either positive or negative output voltages. They can be
configured as either a boost, flyback, SEPIC or inverting
converter. The LT3758/LT3758A drive a low side external
N-channel power MOSFET from an internal regulated 7.2V
supply. The fixed frequency, current-mode architecture
results in stable operation over a wide range of supply
and output voltages.
APPLICATIONS
The LT3758/LT3758A feature soft-start and frequency
foldback functions to limit inductor current during startup and output short-circuit. The LT3758A has improved
load transient performance compared to the LT3758.
n
The operating frequency of LT3758/LT3758A can be set
with an external resistor over a 100kHz to 1MHz range,
and can be synchronized to an external clock using the
SYNC pin. A minimum operating supply voltage of 5.5V,
and a low shutdown quiescent current of less than 1µA,
make the LT3758/LT3758A ideally suited for batterypowered systems.
Automotive
Telecom
n Industrial
n
n
All registered trademarks and trademarks are the property of their respective owners.
TYPICAL APPLICATION
12V Output Nonisolated Flyback Power Supply
VIN
36V TO
72V
D1
CIN
2.2µF
100V
X7R
0.022µF
100V
1M
6.2k
VIN
SYNC
LT3758
SW
GATE
M1
FBX
GND INTVCC
VC
1N4148
0.47µF
100pF
105k
1%
SENSE
RT
SS
63.4k
200kHz
4,5,6
(PARALLEL)
DSN
SHDN/UVLO
44.2k
T1
1,2,3
(SERIES)
VOUT
12V
1.2A
10k
10nF
CVCC
4.7µF
10V
X5R
5.1Ω
0.030Ω
15.8k
1%
COUT
47µF
X5R
3758 TA01
Rev G
Document Feedback
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1
LT3758/LT3758A
ABSOLUTE MAXIMUM RATINGS
(Note 1)
VIN, SHDN/UVLO (Note 7).......................................100V
INTVCC.....................................................VIN + 0.3V, 20V
GATE......................................................... INTVCC + 0.3V
SYNC...........................................................................8V
VC, SS..........................................................................3V
RT................................................................................................ 1.5V
SENSE.....................................................................±0.3V
FBX.................................................................. –6V to 6V
Operating Junction Temperature Range (Notes 2, 8)
LT3758E/LT3758AE............................ –40°C to 125°C
LT3758I/LT3758AI.............................. –40°C to 125°C
LT3758H/LT3758AH........................... –40°C to 150°C
LT3758MP/LT3758AMP...................... –55°C to 150°C
Storage Temperature Range
DFN..................................................... –65°C to 125°C
MSOP................................................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec) MSOP......... 300°C
PIN CONFIGURATION
TOP VIEW
VC
1
FBX
2
SS
3
RT
4
SYNC
5
11
GND
TOP VIEW
10 VIN
9 SHDN/UVLO
VC
FBX
SS
RT
SYNC
8 INTVCC
7 GATE
6 SENSE
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
TJMAX = 125°C, θJA = 43°C/W
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
1
2
3
4
5
11
GND
10
9
8
7
6
VIN
SHDN/UVLO
INTVCC
GATE
SENSE
MSE PACKAGE
10-LEAD PLASTIC MSOP
TJMAX = 150°C, θJA = 40°C/W
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT3758EDD#PBF
LT3758EDD#TRPBF
LDNK
10-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LT3758IDD#PBF
LT3758IDD#TRPBF
LDNK
10-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LT3758EMSE#PBF
LT3758EMSE#TRPBF
LTDNM
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 125°C
LT3758IMSE #PBF
LT3758IMSE#TRPBF
LTDNM
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 125°C
LT3758HMSE#PBF
LT3758HMSE#TRPBF
LTDNM
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 150°C
LT3758MPMSE #PBF
LT3758MPMSE#TRPBF
LTDNM
10-Lead (3mm × 3mm) Plastic MSOP
–55°C to 150°C
LT3758AEDD#PBF
LT3758AEDD#TRPBF
LGGS
10-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LT3758AIDD#PBF
LT3758AIDD#TRPBF
LGGS
10-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
LT3758AEMSE#PBF
LT3758AEMSE#TRPBF
LTGGK
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 125°C
LT3758AIMSE#PBF
LT3758AIMSE#TRPBF
LTGGK
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 125°C
LT3758AHMSE#PBF
LT3758AHMSE#TRPBF
LTGGK
10-Lead (3mm × 3mm) Plastic MSOP
–40°C to 150°C
LT3758AMPMSE#PBF
LT3758AMPMSE#TRPBF
LTGGK
10-Lead (3mm × 3mm) Plastic MSOP
–55°C to 150°C
2
Rev G
For more information www.analog.com
LT3758/LT3758A
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT3758AIDD#WTRPBF
LGGS
10-Lead (3mm × 3mm) Plastic DFN
–40°C to 125°C
AUTOMOTIVE PRODUCTS**
LT3758AIDD#WPBF
Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix.
**Versions of this part are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. These
models are designated with a #W suffix. Only the automotive grade products shown are available for use in automotive applications. Contact your
local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for
these models.
ELECTRICAL
CHARACTERISTICS
The
l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 24V, SHDN/UVLO = 24V, SENSE = 0V, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
VIN Operating Range
TYP
5.5
MAX
UNITS
100
V
VIN Shutdown IQ
SHDN/UVLO = 0V
SHDN/UVLO = 1.15V
0.1
1
6
µA
µA
VIN Operating IQ
VC = 0.3V, RT = 41.2k
1.75
2.2
mA
VIN Operating IQ with Internal LDO Disabled
VC = 0.3V, RT = 41.2k, INTVCC = 7.5V
350
400
µA
110
120
mV
SENSE Current Limit Threshold
SENSE Input Bias Current
l
100
Current Out of Pin
–65
µA
Error Amplifier
FBX Regulation Voltage (VFBX(REG))
FBX > 0V (Note 3)
FBX < 0V (Note 3)
FBX Overvoltage Lockout
FBX > 0V (Note 4)
FBX < 0V (Note 4)
FBX Pin Input Current
FBX = 1.6V (Note 3)
FBX = –0.8V (Note 3)
Transconductance gm (∆IVC /∆FBX)
(Note 3)
230
µS
VC Output Impedance
(Note 3)
5
MΩ
VFBX Line Regulation (∆VFBX /[∆VIN • VFBX(REG)])
FBX > 0V, 5.5V < VIN < 100V (Notes 3, 6)
FBX < 0V, 5.5V < VIN < 100V (Notes 3, 6)
l
l
1.569
–0.816
1.6
–0.800
1.631
–0.784
V
V
6
7
8
11
10
14
%
%
70
100
10
nA
nA
–10
0.006
0.005
VC Current Mode Gain (∆VVC /∆VSENSE)
0.025
0.03
%/V
%/V
5.5
V/V
VC Source Current
VC = 1.5V
–15
µA
VC Sink Current
FBX = 1.7V
FBX = –0.85V
12
11
µA
µA
Oscillator
Switching Frequency
RT = 41.2k to GND, FBX = 1.6V
RT = 140k to GND, FBX = 1.6V
RT = 10.5k to GND, FBX = 1.6V
RT Voltage
FBX = 1.6V
270
300
100
1000
330
kHz
kHz
kHz
1.2
V
Minimum Off-Time
220
ns
Minimum On-Time
220
ns
SYNC Input Low
0.4
SYNC Input High
SS Pull-Up Current
1.5
SS = 0V, Current Out of Pin
–10
µA
Rev G
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3
LT3758/LT3758A
ELECTRICAL
CHARACTERISTICS
The
l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 24V, SHDN/UVLO = 24V, SENSE = 0V, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
7
7.2
7.4
V
4.3
4.5
0.5
4.7
V
V
Low Dropout Regulator
INTVCC Regulation Voltage
INTVCC Undervoltage Lockout Threshold
l
Falling INTVCC
UVLO Hysteresis
INTVCC Overvoltage Lockout Threshold
17.5
INTVCC Current Limit
VIN = 100V
VIN = 20V
11
16
50
INTVCC Load Regulation (∆VINTVCC / VINTVCC)
0 < IINTVCC < 10mA, VIN = 8V
–1
–0.4
INTVCC Line Regulation (∆VINTVCC / [∆VIN • VINTVCC])
8V < VIN < 100V
Dropout Voltage (VIN – VINTVCC)
VIN = 6V, IINTVCC = 10mA
500
INTVCC Current in Shutdown
SHDN/UVLO = 0V, INTVCC = 8V
16
0.005
INTVCC Voltage to Bypass Internal LDO
V
22
mA
mA
%
0.02
%/V
mV
µA
7.5
V
1.27
V
0.4
V
Logic Inputs
SHDN/UVLO Threshold Voltage Falling
VIN = INTVCC = 8V
SHDN/UVLO Input Low Voltage
IVIN Drops Below 1µA
SHDN/UVLO Pin Bias Current Low
SHDN/UVLO = 1.15V
2
2.5
µA
SHDN/UVLO Pin Bias Current High
SHDN/UVLO = 1.33V
10
100
nA
t r Gate Driver Output Rise Time
CL = 3300pF (Note 5), INTVCC = 7.5V
22
ns
t f Gate Driver Output Fall Time
CL = 3300pF (Note 5), INTVCC = 7.5V
20
ns
l
1.17
1.7
1.22
Gate Driver
Gate Output Low (VOL)
0.05
Gate Output High (VOH)
INTVCC
–0.05
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT3758E/LT3758AE are guaranteed to meet performance
specifications from the 0°C to 125°C junction temperature. Specifications
over the –40°C to 125°C operating junction temperature range are
assured by design, characterization and correlation with statistical process
controls. The LT3758I/LT3758AI are guaranteed over the full –40°C to
125°C operating junction temperature range. The LT3758H/LT3758AH are
guaranteed over the full –40°C to 150°C operating junction temperature
range. High junction temperatures degrade operating lifetimes. Operating
lifetime is derated at junction temperatures greater than 125°C. The
LT3758MP/LT3758AMP are 100% tested and guaranteed over the full
–55°C to 150°C operating junction temperature range.
4
V
V
Note 3: The LT3758/LT3758A are tested in a feedback loop which servos
VFBX to the reference voltages (1.6V and –0.8V) with the VC pin forced
to 1.3V.
Note 4: FBX overvoltage lockout is measured at VFBX(OVERVOLTAGE) relative
to regulated VFBX(REG).
Note 5: Rise and fall times are measured at 10% and 90% levels.
Note 6: SHDN/UVLO = 1.33V when VIN = 5.5V.
Note 7: For VIN below 6V, the SHDN/UVLO pin must not exceed VIN .
Note 8: The LT3758/LT3758A include overtemperature protection that
is intended to protect the device during momentary overload conditions.
Junction temperature will exceed the maximum operating junction
temperature when overtemperature protection is active. Continuous
operation above the specified maximum operating junction temperature
may impair device reliability.
Rev G
For more information www.analog.com
LT3758/LT3758A
TYPICAL PERFORMANCE CHARACTERISTICS
–790
VIN = 100V
1600
VIN = 24V
1595
VIN = 8V
1590
VIN = INTVCC = 5.5V
SHDN/UVLO = 1.33V
1585
1580
–75 –50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
REGULATED FEEDBACK VOLTAGE (mV)
REGULATED FEEDBACK VOLTAGE (mV)
1605
Positive Feedback Voltage
vs Temperature, VIN
TA = 25°C, unless otherwise noted.
Negative Feedback Voltage
vs Temperature, VIN
VIN = INTVCC = 5.5V
SHDN/UVLO = 1.33V
–792
–794
VIN = 8V
–796
–798
VIN = 100V
–800
VIN = 24V
–802
–804
–75 –50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
3758 G01
1.9
3758 G02
Quiescent Current
vs Temperature, VIN
Dynamic Quiescent Current
vs Switching Frequency
35
CGATE = 3300pF
1.8
25
VIN = 100V
IQ(mA)
QUIESCENT CURRENT (mA)
30
1.7
VIN = 24V
20
15
10
1.6
5
VIN = INTVCC = 5.5V
1.5
–75 –50 –25
0
0 25 50 75 100 125 150
TEMPERATURE (°C)
0 100 200 300 400 500 600 700 800 900 1000
SWITCHING FREQUENCY (kHz)
3758 G03
Normalized Switching
Frequency vs FBX
RT vs Switching Frequency
NORMALIZED FREQUENCY (%)
120
RT (kΩ)
1000
100
10
3758 G04
0 100 200 300 400 500 600 700 800 900 1000
SWITCHING FREQUENCY (kHz)
100
80
60
40
20
0
–0.8
–0.4
3758 G05
0
0.4
0.8
FBX VOLTAGE (V)
1.2
1.6
3758 G06
Rev G
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5
LT3758/LT3758A
TYPICAL PERFORMANCE CHARACTERISTICS
Switching Frequency
vs Temperature
SENSE Current Limit Threshold
vs Temperature
120
RT = 41.2K
320
115
SENSE THRESHOLD (mV)
SWITCHING FREQUENCY (kHz)
330
TA = 25°C, unless otherwise noted.
310
300
290
110
105
280
270
–75 –50 –25
100
–75 –50 –25
0 25 50 75 100 125 150
TEMPERATURE (°C)
0 25 50 75 100 125 150
TEMPERATURE (°C)
3758 G08
3758 G07
SENSE Current Limit Threshold
vs Duty Cycle
SHDN/UVLO Threshold
vs Temperature
1.28
110
SHDN/UVLO VOLTAGE (V)
SENSE THRESHOLD (mV)
115
105
100
95
0
20
40
60
DUTY CYCLE (%)
100
80
1.26
SHDN/UVLO RISING
1.24
1.22
SHDN/UVLO FALLING
1.20
1.18
–75 –50 –25
3758 G10
3758 G09
SHDN/UVLO Hysteresis Current
vs Temperature
SHDN/UVLO Current vs Voltage
2.4
40
2.2
ISHDN/ UVLO (µA)
SHDN/UVLO CURRENT (µA)
50
30
20
2.0
1.8
10
0
0
20
40
60
80
SHDN/UVLO VOLTAGE (V)
100
1.6
–75 –50 –25
3758 G11
6
0 25 50 75 100 125 150
TEMPERATURE (°C)
0 25 50 75 100 125 150
TEMPERATURE (°C)
3758 G12
Rev G
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LT3758/LT3758A
TYPICAL PERFORMANCE CHARACTERISTICS
INTVCC Minimum Output
Current vs VIN
INTVCC vs Temperature
45
TJ = 150°C
40
INTVCC CURRENT (mA)
7.2
7.1
30
25
INTVCC = 4.7V
20
15
10
0
1
10
VIN (V)
1000
DROPOUT VOLTAGE (mV)
INTVCC VOLTAGE (V)
7.20
7.15
VIN = 6V
800
90
150°C
10 20 30 40 50 60 70 80 90 100
VIN (V)
125°C
75°C
600
25°C
500
400
200
FALL TIME
RISE TIME
50
40
30
–55°C
20
10
0
0
2
4
6
INTVCC LOAD (mA)
8
10
0
0
5
10
15
3758 G17
25
30
3758 G18
FBX Frequency Foldback
Waveforms During Overcurrent
VIN = 48V
CL = 3300pF
20
CL (nF)
Typical Start-Up Waveforms
VIN = 48V
VOUT
20V/DIV
RISE TIME
20
TIME (ns)
25
INTVCC = 7.2V
60
0°C
300
Gate Drive Rise
and Fall Time vs INTVCC
25
20
70
700
3758 G16
30
15
10
INTVCC LOAD (mA)
Gate Drive Rise
and Fall Time vs CL
80
100
0
5
3758 G15
INTVCC Dropout Voltage
vs Current, Temperature
INTVCC Line Regulation
7.25
0
3758 G14
900
7.10
7
6.8
100
3758 G13
7.30
7.1
6.9
INTVCC = 6V
5
0 25 50 75 100 125 150
TEMPERATURE (°C)
VIN = 8V
7.2
35
TIME (ns)
INTVCC (V)
7.3
INTVCC Load Regulation
7.3
INTVCC VOLTAGE (V)
7.4
7.0
–75 –50 –25
TA = 25°C, unless otherwise noted.
FALL TIME
VOUT
10V/DIV
VSW
50V/DIV
IL1A + IL1B
1A/DIV
IL1A + IL1B
2A/DIV
15
10
5
0
2ms/DIV
3
6
9
INTVCC (V)
12
15
3758 G20
SEE TYPICAL APPLICATION: 18V TO 72V INPUT,
24V OUTPUT SEPIC CONVERTER
50µs/DIV
3758 G21
SEE TYPICAL APPLICATION: 18V TO 72V INPUT,
24V OUTPUT SEPIC CONVERTER
3758 G19
Rev G
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7
LT3758/LT3758A
PIN FUNCTIONS
VC (Pin 1): Error Amplifier Compensation Pin. Used to
stabilize the voltage loop with an external RC network.
FBX (Pin 2): Positive and Negative Feedback Pin.
Receives the feedback voltage from the external resistor
divider across the output. Also modulates the switching
frequency during start-up and fault conditions when FBX
is close to GND.
SS (Pin 3): Soft-Start Pin. This pin modulates compensation pin voltage (VC) clamp. The soft-start interval is set
with an external capacitor. The pin has a 10µA (typical)
pull-up current source to an internal 2.5V rail. The softstart pin is reset to GND by an undervoltage condition
at SHDN/UVLO, an INTVCC undervoltage or overvoltage
condition or an internal thermal lockout.
RT (Pin 4): Switching Frequency Adjustment Pin. Set the
frequency using a resistor to GND. Do not leave this pin
open.
SYNC (Pin 5): Frequency Synchronization Pin. Used to
synchronize the switching frequency to an outside clock.
If this feature is used, an RT resistor should be chosen
to program a switching frequency 20% slower than the
SYNC pulse frequency. Tie the SYNC pin to GND if this
feature is not used. SYNC is bypassed when FBX is close
to GND.
SENSE (Pin 6): The Current Sense Input for the Control
Loop. Kelvin connect this pin to the positive terminal of
the switch current sense resistor in the source of the
NFET. The negative terminal of the current sense resistor should be connected to GND plane close to the IC.
8
GATE (Pin 7): N-Channel MOSFET Gate Driver Output.
Switches between INTVCC and GND. Driven to GND when
IC is shut down, during thermal lockout or when INTVCC
is above or below the overvoltage or UV thresholds,
respectively.
INTVCC (Pin 8): Regulated Supply for Internal Loads and
Gate Driver. Supplied from VIN and regulated to 7.2V (typical). INTVCC must be bypassed with a minimum of 4.7µF
capacitor placed close to pin. INTVCC can be connected
directly to VIN, if VIN is less than 17.5V. INTVCC can also
be connected to a power supply whose voltage is higher
than 7.5V, and lower than VIN, provided that supply does
not exceed 17.5V.
SHDN/UVLO (Pin 9): Shutdown and Undervoltage Detect
Pin. An accurate 1.22V (nominal) falling threshold with
externally programmable hysteresis detects when power
is okay to enable switching. Rising hysteresis is generated
by the external resistor divider and an accurate internal
2µA pull-down current. An undervoltage condition resets
sort-start. Tie to 0.4V, or less, to disable the device and
reduce VIN quiescent current below 1µA.
VIN (Pin 10): Input Supply Pin. Must be locally bypassed
with a 0.22µF, or larger, capacitor placed close to the pin.
Exposed Pad (Pin 11): Ground. This pin also serves as
the negative terminal of the current sense resistor. The
exposed pad must be soldered directly to the local ground
plane.
Rev G
For more information www.analog.com
LT3758/LT3758A
BLOCK DIAGRAM
CDC
L1
D1
VOUT
•
VIN
R4
+
R3
CIN
L2
•
9
2.5V
IS3
IS2
10µA
VC
1
CC2
A10
IS1
2µA
2.5V
CC1
1.72V
–0.88V
–
+
–
+
A12
G6
VC
2
8
+
–
5V UP
4.5V DOWN
G5
R
S
GATE
G2
O
A6
VISENSE
RAMP
1.28V
RAMP
GENERATOR
–
+A3
G1
+
+
–
SS
M1
–
+
+
A5
–
110mV
SENSE
6
GND
RSENSE
100kHz-1MHz
OSCILLATOR
A4
Q1
FREQ
PROG
RT
SYNC
5
CSS
7
11
D3
3
CVCC
PWM
COMPARATOR
1.2V
D2
INTVCC
DRIVER
–
+A7
FREQUENCY
FOLDBACK
R5
8k
CURRENT
LIMIT
7.2V LDO
SLOPE
+
A2
–
–0.8V
VIN
SR1
+
A1
–
1.6V
FBX
A8
TSD
165˚C
Q2
FBX
G3
A11
17.5V
+
A9
–
UVLO
Q3
RC
COUT2
1.22V
INTERNAL
REGULATOR
AND UVLO
G4
R2 + COUT1
R1
10
SHDN/UVLO
–
+
FBX
4
3758 F01
RT
Figure 1. LT3758 Block Diagram Working as a SEPIC Converter
Rev G
For more information www.analog.com
9
LT3758/LT3758A
APPLICATIONS INFORMATION
Main Control Loop
The LT3758 uses a fixed frequency, current mode control scheme to provide excellent line and load regulation.
Operation can be best understood by referring to the
Block Diagram in Figure 1.
The start of each oscillator cycle sets the SR latch (SR1)
and turns on the external power MOSFET switch M1
through driver G2. The switch current flows through the
external current sensing resistor RSENSE and generates a
voltage proportional to the switch current. This current
sense voltage VISENSE (amplified by A5) is added to a
stabilizing slope compensation ramp and the resulting
sum (SLOPE) is fed into the positive terminal of the PWM
comparator A7. When SLOPE exceeds the level at the
negative input of A7 (VC pin), SR1 is reset, turning off the
power switch. The level at the negative input of A7 is set
by the error amplifier A1 (or A2) and is an amplified version of the difference between the feedback voltage (FBX
pin) and the reference voltage (1.6V or –0.8V, depending
on the configuration). In this manner, the error amplifier sets the correct peak switch current level to keep the
output in regulation.
The LT3758 has a switch current limit function. The current sense voltage is input to the current limit comparator A6. If the SENSE pin voltage is higher than the sense
current limit threshold VSENSE(MAX) (110mV, typical), A6
will reset SR1 and turn off M1 immediately.
The LT3758 is capable of generating either positive or
negative output voltage with a single FBX pin. It can be
configured as a boost, flyback or SEPIC converter to generate positive output voltage, or as an inverting converter
to generate negative output voltage. When configured as
a SEPIC converter, as shown in Figure 1, the FBX pin is
pulled up to the internal bias voltage of 1.6V by a voltage divider (R1 and R2) connected from VOUT to GND.
Comparator A2 becomes inactive and comparator A1 performs the inverting amplification from FBX to VC. When
the LT3758 is in an inverting configuration, the FBX pin
is pulled down to –0.8V by a voltage divider connected
from VOUT to GND. Comparator A1 becomes inactive and
comparator A2 performs the noninverting amplification
from FBX to VC.
10
The LT3758 has overvoltage protection functions to protect the converter from excessive output voltage overshoot during start-up or recovery from a short-circuit
condition. An overvoltage comparator A11 (with 20mV
hysteresis) senses when the FBX pin voltage exceeds the
positive regulated voltage (1.6V) by 8% and provides a
reset pulse. Similarly, an overvoltage comparator A12
(with 10mV hysteresis) senses when the FBX pin voltage
exceeds the negative regulated voltage (–0.8V) by 11%
and provides a reset pulse. Both reset pulses are sent to
the main RS latch (SR1) through G6 and G5. The power
MOSFET switch M1 is actively held off for the duration of
an output overvoltage condition.
Programming Turn-On and Turn-Off Thresholds with
the SHDN/UVLO Pin
The SHDN/UVLO pin controls whether the LT3758 is
enabled or is in shutdown state. A micropower 1.22V
reference, a comparator A10 and a controllable current
source IS1 allow the user to accurately program the supply
voltage at which the IC turns on and off. The falling value
can be accurately set by the resistor dividers R3 and R4.
When SHDN/UVLO is above 0.4V, and below the 1.22V
threshold, the small pull-down current source IS1 (typical
2µA) is active.
The purpose of this current is to allow the user to program
the rising hysteresis. The Block Diagram of the comparator and the external resistors is shown in Figure 1. The
typical falling threshold voltage and rising threshold voltage can be calculated by the following equations:
V VIN,FALLING = 1.22 •
(R3+R4)
R4
V VIN,RISING = 2µA • R3+ VIN,FALLING
For applications where the SHDN/UVLO pin is only used
as a logic input, the SHDN/UVLO pin can be connected
directly to the input voltage VIN through a 1k resistor for
always-on operation.
Rev G
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APPLICATIONS INFORMATION
INTVCC Regulator Bypassing and Operation
QG = power MOSFET total gate charge
An internal, low dropout (LDO) voltage regulator produces
the 7.2V INTVCC supply which powers the gate driver, as
shown in Figure 1. The LT3758 contains an undervoltage
lockout comparator A8 and an overvoltage lockout comparator A9 for the INTVCC supply. The INTVCC undervoltage
(UV) threshold is 4.5V (typical), with 0.5V hysteresis, to
ensure that the MOSFETs have sufficient gate drive voltage
before turning on. The logic circuitry within the LT3758 is
also powered from the internal INTVCC supply.
The LT3758 uses packages with an Exposed Pad for
enhanced thermal conduction. With proper soldering to
the Exposed Pad on the underside of the package and a
full copper plane underneath the device, thermal resistance (θJA) will be about 43°C/W for the DD package and
40°C/W for the MSE package. For an ambient board temperature of TA = 70°C and maximum junction temperature
of 125°C, the maximum IDRIVE (IDRIVE(MAX)) of the DD
package can be calculated as:
The INTVCC overvoltage threshold is set to be 17.5V
(typical) to protect the gate of the power MOSFET. When
INTVCC is below the UV threshold, or above the overvoltage threshold, the GATE pin will be forced to GND and the
soft-start operation will be triggered.
The INTVCC regulator must be bypassed to ground immediately adjacent to the IC pins with a minimum of 4.7µF
ceramic capacitor. Good bypassing is necessary to supply the high transient currents required by the MOSFET
gate driver.
TJ = TA + PIC • θJA
TA = ambient temperature
Based on the preceding equation and the INTVCC Minimum
Output Current vs VIN graph, the user can calculate the
maximum MOSFET gate charge the LT3758 can drive at
a given VIN and switch frequency. A plot of the maximum
QG vs VIN at different frequencies to guarantee a minimum
4.7V INTVCC is shown in Figure 2.
140
100
80
60
40
PIC = IC power consumption
20
0
= VIN • (IQ + IDRIVE)
f = switching frequency
1MHz
1
10
VIN (V)
IQ = VIN operation IQ = 1.6mA
IDRIVE = average gate drive current = f • QG
300kHz
120
θJA = junction-to-ambient thermal resistance
(TJ − TA )
1.28W
−IQ =
−1.6mA
(θ JA • VIN )
VIN
The LT3758 has an internal INTVCC IDRIVE current limit
function to protect the IC from excessive on-chip power
dissipation. The IDRIVE current limit decreases as the VIN
increases (see the INTVCC Minimum Output Current vs VIN
graph in the Typical Performance Characteristics section).
If IDRIVE reaches the current limit, INTVCC voltage will fall
and may trigger the soft-start.
QG (nC)
In an actual application, most of the IC supply current is
used to drive the gate capacitance of the power MOSFET.
The on-chip power dissipation can be a significant concern when a large power MOSFET is being driven at a
high frequency and the VIN voltage is high. It is important to limit the power dissipation through selection of
MOSFET and/or operating frequency so the LT3758 does
not exceed its maximum junction temperature rating. The
junction temperature TJ can be estimated using the following equations:
IDRIVE(MAX) =
100
3758 F02
Figure 2. Recommended Maximum QG vs VIN at Different
Frequencies to Ensure INTVCC Higher Than 4.7V
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
As illustrated in Figure 2, a trade-off between the operating frequency and the size of the power MOSFET may be
needed in order to maintain a reliable IC junction temperature. Prior to lowering the operating frequency, however,
be sure to check with power MOSFET manufacturers for
their most recent low QG, low RDS(ON) devices. Power
MOSFET manufacturing technologies are continually
improving, with newer and better performance devices
being introduced almost yearly.
An effective approach to reduce the power consumption
of the internal LDO for gate drive is to tie the INTVCC pin
to an external voltage source high enough to turn off the
internal LDO regulator.
If the input voltage VIN does not exceed the absolute maximum rating of both the power MOSFET gate-source voltage (VGS) and the INTVCC overvoltage lockout threshold
voltage (17.5V), the INTVCC pin can be shorted directly
to the VIN pin. In this condition, the internal LDO will be
turned off and the gate driver will be powered directly
from the input voltage VIN . With the INTVCC pin shorted to
VIN, however, a small current (around 16µA) will load the
INTVCC in shutdown mode. For applications that require
the lowest shutdown mode input supply current, do not
connect the INTVCC pin to VIN .
A resistor RVCC can be connected, as shown in Figure 3, to
limit the inrush current from VOUT. Regardless of whether
or not the INTVCC pin is connected to an external voltage
source, it is always necessary to have the driver circuitry
bypassed with a 4.7µF low ESR ceramic capacitor to
ground immediately adjacent to the INTVCC and GND pins.
Operating Frequency and Synchronization
The choice of operating frequency may be determined
by on-chip power dissipation, otherwise it is a trade-off
between efficiency and component size. Low frequency
operation improves efficiency by reducing gate drive current and MOSFET and diode switching losses. However,
lower frequency operation requires a physically larger
inductor. Switching frequency also has implications
for loop compensation. The LT3758 uses a constantfrequency architecture that can be programmed over a
100kHz to 1000kHz range with a single external resistor
from the RT pin to ground, as shown in Figure 1. The
RT pin must have an external resistor to GND for proper
operation of the LT3758. A table for selecting the value
of RT for a given operating frequency is shown in Table 1.
Table 1. Timing Resistor (RT ) Value
SWITCHING FREQUENCY (kHz)
RT (kΩ)
In SEPIC or flyback applications, the INTVCC pin can be
connected to the output voltage VOUT through a blocking
diode, as shown in Figure 3, if VOUT meets the following
conditions:
100
140
200
63.4
300
41.2
400
30.9
1. VOUT < VIN (pin voltage)
500
24.3
600
19.6
700
16.5
800
14
900
12.1
1000
10.5
2. VOUT < 17.5V
3. VOUT < maximum VGS rating of power MOSFET
LT3758
DVCC
INTVCC
RVCC
VOUT
CVCC
4.7µF
GND
3758 F03
Figure 3. Connecting INTVCC to VOUT
12
The operating frequency of the LT3758 can be synchronized
to an external clock source. By providing a digital clock
signal into the SYNC pin, the LT3758 will operate at the
SYNC clock frequency. If this feature is used, an RT resistor
should be chosen to program a switching frequency 20%
slower than SYNC pulse frequency. It is recommended the
SYNC pulse have a minimum pulse width of 200ns. Tie the
SYNC pin to GND if this feature is not used.
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
Duty Cycle Consideration
Soft-Start
Switching duty cycle is a key variable defining converter operation. As such, its limits must be considered.
Minimum on-time is the smallest time duration that the
LT3758 is capable of turning on the power MOSFET. This
time is generally about 220ns (typical) (see Minimum
On-Time in the Electrical Characteristics table). In each
switching cycle, the LT3758 keeps the power switch off
for at least 220ns (typical) (see Minimum Off-Time in the
Electrical Characteristics table).
The LT3758 contains several features to limit peak switch
currents and output voltage (VOUT) overshoot during
start-up or recovery from a fault condition. The primary
purpose of these features is to prevent damage to external
components or the load.
The minimum on-time and minimum off-time and the
switching frequency define the minimum and maximum
switching duty cycles a converter is able to generate:
Minimum duty cycle = minimum on-time • frequency
Maximum duty cycle = 1 – (minimum off-time • frequency)
Programming the Output Voltage
The output voltage VOUT is set by a resistor divider, as
shown in Figure 1. The positive and negative VOUT are set
by the following equations:
⎛ R2 ⎞
VOUT,POSITIVE = 1.6V • ⎜ 1+ ⎟
⎝ R1⎠
The LT3758 addresses this mechanism with the SS pin.
As shown in Figure 1, the SS pin reduces the power
MOSFET current by pulling down the VC pin through
Q2. In this way the SS allows the output capacitor to
charge gradually toward its final value while limiting the
start-up peak currents. The typical start-up waveforms are
shown in the Typical Performance Characteristics section.
The inductor current IL slewing rate is limited by the softstart function.
Besides start-up (with SHDN/UVLO), soft-start can also
be triggered by the following faults:
⎛ R2 ⎞
VOUT,NEGATIVE = –0.8V • ⎜ 1+ ⎟
⎝ R1⎠
1. INTVCC > 17.5V
The resistors R1 and R2 are typically chosen so that
the error caused by the current flowing into the FBX pin
during normal operation is less than 1% (this translates
to a maximum value of R1 at about 158k).
In the applications where VOUT is pulled up by an external positive power supply, the FBX pin is also pulled up
through the R2 and R1 network. Make sure the FBX does
not exceed its absolute maximum rating (6V). The R5, D2,
and D3 in Figure 1 provide a resistive clamp in the positive
direction. To ensure FBX is lower than 6V, choose sufficiently large R1 and R2 to meet the following condition:
High peak switch currents during start-up may occur
in switching regulators. Since VOUT is far from its final
value, the feedback loop is saturated and the regulator
tries to charge the output capacitor as quickly as possible,
resulting in large peak currents. A large surge current may
cause inductor saturation or power switch failure.
R2
⎛ R2 ⎞
6V • ⎜ 1+ ⎟ + 3.5V •
> VOUT(MAX)
⎝
R1⎠
8kΩ
2. INTVCC < 4.5V
3. Thermal lockout
Any of these three faults will cause the LT3758 to stop
switching immediately. The SS pin will be discharged by
Q3. When all faults are cleared and the SS pin has been
discharged below 0.2V, a 10µA current source IS2 starts
charging the SS pin, initiating a soft-start operation.
The soft-start interval is set by the soft-start capacitor
selection according to the equation:
TSS = C SS •
1.25V
10µA
where VOUT(MAX) is the maximum VOUT that is pulled up
by an external power supply.
Rev G
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13
LT3758/LT3758A
APPLICATIONS INFORMATION
FBX Frequency Foldback
When VOUT is very low during start-up or a GND fault
on the output, the switching regulator must operate at
low duty cycles to maintain the power switch current
within the current limit range, since the inductor current decay rate is very low during switch off time. The
minimum on-time limitation may prevent the switcher
from attaining a sufficiently low duty cycle at the programmed switching frequency. So, the switch current
will keep increasing through each switch cycle, exceeding the programmed current limit. To prevent the switch
peak currents from exceeding the programmed value, the
LT3758 contains a frequency foldback function to reduce
the switching frequency when the FBX voltage is low (see
the Normalized Switching Frequency vs FBX graph in the
Typical Performance Characteristics section).
During frequency foldback, external clock synchronization is disabled to prevent interference with frequency
reducing operation.
Thermal Lockout
If LT3758 die temperature reaches 165°C (typical), the
part will go into thermal lockout. The power switch will
be turned off. A soft-start operation will be triggered. The
part will be enabled again when the die temperature has
dropped by 5°C (nominal).
Loop Compensation
Loop compensation determines the stability and transient
performance. The LT3758/LT3758A use current mode
control to regulate the output which simplifies loop compensation. The LT3758A improves the no-load to heavy
load transient response, when compared to the LT3758.
New internal circuits ensure that the transient from not
switching to switching at high current can be made in
a few cycles. The optimum values depend on the converter topology, the component values and the operating conditions (including the input voltage, load current,
etc.). To compensate the feedback loop of the LT3758/
LT3758A, a series resistor-capacitor network is usually
connected from the VC pin to GND. Figure 1 shows the
typical VC compensation network. For most applications,
the capacitor should be in the range of 470pF to 22nF,
and the resistor should be in the range of 5k to 50k. A
small capacitor is often connected in parallel with the RC
compensation network to attenuate the VC voltage ripple
induced from the output voltage ripple through the internal error amplifier. The parallel capacitor usually ranges in
value from 10pF to 100pF. A practical approach to design
the compensation network is to start with one of the circuits in this data sheet that is similar to your application, and tune the compensation network to optimize the
performance. Stability should then be checked across all
operating conditions, including load current, input voltage
and temperature.
SENSE Pin Programming
For control and protection, the LT3758 measures the
power MOSFET current by using a sense resistor (RSENSE)
between GND and the MOSFET source. Figure 4 shows a
typical waveform of the sense voltage (VSENSE) across the
sense resistor. It is important to use Kelvin traces between
the SENSE pin and RSENSE, and to place the IC GND as
close as possible to the GND terminal of the RSENSE for
proper operation.
VSENSE
∆VSENSE = χ • VSENSE(MAX)
VSENSE(MAX)
VSENSE(PEAK)
t
DTS
TS
3758 F04
Figure 4. The Sense Voltage During a Switching Cycle
14
Rev G
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APPLICATIONS INFORMATION
Due to the current limit function of the SENSE pin,
RSENSE should be selected to guarantee that the peak
current sense voltage VSENSE(PEAK) during steady state
normal operation is lower than the SENSE current limit
threshold (see the Electrical Characteristics table). Given
a 20% margin, VSENSE(PEAK) is set to be 80mV. Then,
the maximum switch ripple current percentage can be
calculated using the following equation:
χ=
ΔVSENSE
80mV − 0.5 • ΔVSENSE
c is used in subsequent design examples to calculate
inductor value. ∆VSENSE is the ripple voltage across
RSENSE.
The LT3758 switching controller incorporates 100ns
timing interval to blank the ringing on the current sense
signal immediately after M1 is turned on. This ringing is
caused by the parasitic inductance and capacitance of the
PCB trace, the sense resistor, the diode, and the MOSFET.
The 100ns timing interval is adequate for most of the
LT3758 applications. In the applications that have very
large and long ringing on the current sense signal, a small
RC filter can be added to filter out the excess ringing.
Figure 5 shows the RC filter on the SENSE pin. It is usually
sufficient to choose 22Ω for RFLT and 2.2nF to 10nF for
CFLT. Keep RFLT’s resistance low. Remember that there is
65µA (typical) flowing out of the SENSE pin. Adding RFLT
will affect the SENSE current limit threshold:
VSENSE_ILIM = 110mV – 65µA • RFLT
LT3758
CFLT
Boost Converter: Switch Duty Cycle and Frequency
The LT3758 can be configured as a boost converter for
the applications where the converter output voltage is
higher than the input voltage. Remember that boost converters are not short-circuit protected. Under a shorted
output condition, the inductor current is limited only by
the input supply capability. For applications requiring a
step-up converter that is short-circuit protected, please
refer to the Applications Information section covering
SEPIC converters.
The conversion ratio as a function of duty cycle is:
VOUT
1
=
VIN 1−D
in continuous conduction mode (CCM).
For a boost converter operating in CCM, the duty cycle
of the main switch can be calculated based on the output
voltage (VOUT) and the input voltage (VIN). The maximum
duty cycle (DMAX) occurs when the converter has the
minimum input voltage:
DMAX =
VOUT − VIN(MIN)
VOUT
Boost Converter: Inductor and Sense Resistor Selection
RFLT
SENSE
GND
The LT3758 can be configured as different topologies. The
first topology to be analyzed will be the boost converter,
followed by the flyback, SEPIC and inverting converters.
Discontinuous conduction mode (DCM) provides higher
conversion ratios at a given frequency at the cost of
reduced efficiencies and higher switching currents.
M1
GATE
APPLICATION CIRCUITS
For the boost topology, the maximum average inductor
current is:
RSENSE
3758 F05
Figure 5. The RC Filter on the SENSE Pin
IL(MAX) = IO(MAX) •
1
1−DMAX
Then, the ripple current can be calculated by:
ΔIL = χ •IL(MAX) = χ •IO(MAX) •
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1
1−DMAX
Rev G
15
LT3758/LT3758A
APPLICATIONS INFORMATION
The constant c in the preceding equation represents the
percentage peak-to-peak ripple current in the inductor,
relative to IL(MAX).
The inductor ripple current has a direct effect on the
choice of the inductor value. Choosing smaller values of
∆IL requires large inductances and reduces the current
loop gain (the converter will approach voltage mode).
Accepting larger values of ∆IL provides fast transient
response and allows the use of low inductances, but
results in higher input current ripple, greater core
losses, and in some cases, subharmonic oscillation. A
good starting point for c is 0.2 and careful evaluation
of system stability should be made to ensure adequate
design margin.
Given an operating input voltage range, and having chosen the operating frequency and ripple current in the
inductor, the inductor value of the boost converter can
be determined using the following equation:
L=
VIN(MIN)
ΔIL • f
•DMAX
The peak and RMS inductor current are:
Based on these equations, the user should choose the
inductors having sufficient saturation and RMS current
ratings.
Set the sense voltage at IL(PEAK) to be the minimum of the
SENSE current limit threshold with a 20% margin. The
sense resistor value can then be calculated to be:
80mV
IL(PEAK)
PFET = I2L(MAX) • RDS(ON) • DMAX + 2 • V2OUT • IL(MAX)
• CRSS • f/1A
The first term in the preceding equation represents the
conduction losses in the device, and the second term, the
switching loss. CRSS is the reverse transfer capacitance,
which is usually specified in the MOSFET characteristics.
For maximum efficiency, RDS(ON) and CRSS should be
minimized. From a known power dissipated in the power
MOSFET, its junction temperature can be obtained using
the following equation:
Boost Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with low
forward drop and low reverse leakage is desirable. The
peak reverse voltage that the diode must withstand is
equal to the regulator output voltage plus any additional
ringing across its anode-to-cathode during the on-time.
The average forward current in normal operation is equal
to the output current, and the peak current is equal to:
⎛ χ⎞
ID(PEAK) =IL(PEAK) = ⎜⎝ 1+ 2 ⎟⎠ •IL(MAX)
Boost Converter: Power MOSFET Selection
Important parameters for the power MOSFET include the
drain-source voltage rating (VDS), the threshold voltage
16
The power dissipated by the MOSFET in a boost converter is:
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that absolute maximum ratings are not exceeded.
χ2
IL(RMS) = IL(MAX) • 1+
12
The power MOSFET will see full output voltage, plus a
diode forward voltage, and any additional ringing across
its drain-to-source during its off-time. It is recommended
to choose a MOSFET whose BVDSS is higher than VOUT by
a safety margin (a 10V safety margin is usually sufficient).
TJ = TA + PFET • θJA = TA + PFET • (θJC + θCA)
⎛ χ⎞
IL(PEAK) = IL(MAX) • ⎜ 1+ ⎟
⎝ 2⎠
R SENSE =
(VGS(TH)), the on-resistance (RDS(ON)), the gate to source
and gate to drain charges (QGS and QGD), the maximum
drain current (ID(MAX)) and the MOSFET’s thermal
resistances (RθJC and RθJA).
It is recommended that the peak repetitive reverse voltage
rating VRRM is higher than VOUT by a safety margin (a 10V
safety margin is usually sufficient).
Rev G
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APPLICATIONS INFORMATION
The power dissipated by the diode is:
For the bulk C component, which also contributes 1% to
the total ripple:
PD = IO(MAX) • VD
and the diode junction temperature is:
TJ = TA + PD • RθJA
The RθJA to be used in this equation normally includes the
RθJC for the device plus the thermal resistance from the
board to the ambient temperature in the enclosure. TJ must
not exceed the diode maximum junction temperature rating.
Boost Converter: Output Capacitor Selection
Contributions of ESR (equivalent series resistance), ESL
(equivalent series inductance) and the bulk capacitance
tON
tOFF
∆VCOUT
VOUT
(AC)
∆VESR
RINGING DUE TO
TOTAL INDUCTANCE
(BOARD + CAP)
COUT ≥
IO(MAX)
0.01• VOUT • f
The output capacitor in a boost regulator experiences
high RMS ripple currents, as shown in Figure 6. The RMS
ripple current rating of the output capacitor can be determined using the following equation:
IRMS(COUT) ≥ IO(MAX) •
DMAX
1−DMAX
Multiple capacitors are often paralleled to meet ESR
requirements. Typically, once the ESR requirement is satisfied, the capacitance is adequate for filtering and has the
required RMS current rating. Additional ceramic capacitors in parallel are commonly used to reduce the effect of
parasitic inductance in the output capacitor, which reduces
high frequency switching noise on the converter output.
3758 F06
Figure 6. The Output Ripple Waveform of a Boost Converter
must be considered when choosing the correct output
capacitors for a given output ripple voltage. The effect of
these three parameters (ESR, ESL and bulk C) on the output voltage ripple waveform for a typical boost converter
is illustrated in Figure 6.
The choice of component(s) begins with the maximum
acceptable ripple voltage (expressed as a percentage of
the output voltage), and how this ripple should be divided
between the ESR step ∆VESR and the charging/discharging ∆VCOUT. For the purpose of simplicity, we will choose
2% for the maximum output ripple, to be divided equally
between ∆VESR and ∆VCOUT. This percentage ripple will
change, depending on the requirements of the application, and the following equations can easily be modified.
For a 1% contribution to the total ripple voltage, the ESR
of the output capacitor can be determined using the following equation:
ESRCOUT ≤
0.01• VOUT
ID(PEAK)
Boost Converter: Input Capacitor Selection
The input capacitor of a boost converter is less critical
than the output capacitor, due to the fact that the inductor
is in series with the input, and the input current waveform is continuous. The input voltage source impedance
determines the size of the input capacitor, which is typically in the range of 10µF to 100µF. A low ESR capacitor
is recommended, although it is not as critical as for the
output capacitor.
The RMS input capacitor ripple current for a boost converter is:
IRMS(CIN) = 0.3 • ∆IL
FLYBACK CONVERTER APPLICATIONS
The LT3758 can be configured as a flyback converter for
the applications where the converters have multiple outputs, high output voltages or isolated outputs. Figure 7
shows a simplified flyback converter.
The flyback converter has a very low parts count for multiple outputs, and with prudent selection of turns ratio,
can have high output/input voltage conversion ratios with
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17
LT3758/LT3758A
APPLICATIONS INFORMATION
a desirable duty cycle. However, it has low efficiency due
to the high peak currents, high peak voltages and consequent power loss. The flyback converter is commonly
used for an output power of less than 50W.
VDS
The flyback converter can be designed to operate either
in continuous or discontinuous mode. Compared to continuous mode, discontinuous mode has the advantage of
smaller transformer inductances and easy loop compensation, and the disadvantage of higher peak-to-average
current and lower efficiency.
SUGGESTED
RCD SNUBBER
VIN
+
CIN
–
VSN
+
CSN
LS
LP
ISW(MAX)
ID
ID(MAX)
DTS
D
NP:NS
RSN
ISW
+
ID
+
D3TS
t
3758 F08
Figure 8. Waveforms of the Flyback Converter
in Discontinuous Mode Operation
COUT
–
DSN
D2TS
TS
Flyback Converter: Switch Duty Cycle and Turns Ratio
According to the preceding equations, the user has relative freedom in selecting the switch duty cycle or turns
ratio to suit a given application. The selections of the
duty cycle and the turns ratio are somewhat iterative processes, due to the number of variables involved. The user
can choose either a duty cycle or a turns ratio as the start
point. The following trade-offs should be considered when
selecting the switch duty cycle or turns ratio, to optimize
the converter performance. A higher duty cycle affects the
flyback converter in the following aspects:
The flyback converter conversion ratio in the continuous
mode operation is:
• Lower MOSFET RMS current ISW(RMS), but higher
MOSFET VDS peak voltage
LT3758
GATE
SENSE
ISW
M
+
VDS
–
RSENSE
GND
3758 F07
Figure 7. A Simplified Flyback Converter
• Lower diode peak reverse voltage, but higher diode
RMS current ID(RMS)
VOUT NS D
=
•
VIN NP 1−D
Where NS/NP is the second to primary turns ratio.
Figure 8 shows the waveforms of the flyback converter
in discontinuous mode operation. During each switching
period TS, three subintervals occur: DTS, D2TS, D3TS.
During DTS, M is on, and D is reverse-biased. During
D2TS, M is off, and LS is conducting current. Both LP and
LS currents are zero during D3TS.
The flyback converter conversion ratio in the discontinuous mode operation is:
VOUT
N
D
= S•
VIN NP D2
18
• Higher transformer turns ratio (NP/NS)
The choice,
D
=
1
D+D2 3
(for discontinuous mode operation with a given D3) gives
the power MOSFET the lowest power stress (the product
of RMS current and peak voltage). The choice,
D
=
2
D+D2 3
(for discontinuous mode operation with a given D3)
gives the diode the lowest power stress (the product of
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
RMS current and peak voltage). An extreme high or low
duty cycle results in high power stress on the MOSFET
or diode, and reduces efficiency. It is recommended to
choose a duty cycle between 20% and 80%.
Flyback Converter: Transformer Design for
Discontinuous Mode Operation
The transformer design for discontinuous mode of operation is chosen as presented here. According to Figure 8,
the minimum D3 (D3MIN) occurs when the the converter
has the minimum VIN and the maximum output power
(POUT). Choose D3MIN to be equal to or higher than 10%
to guarantee the converter is always in discontinuous
mode operation. Choosing higher D3 allows the use of
low inductances but results in higher switch peak current.
The user can choose a DMAX as the start point. Then, the
maximum average primary currents can be calculated by
the following equation:
ILP(MAX) =ISW(MAX) =
POUT(MAX)
If the flyback converter has multiple outputs, POUT(MAX)
is the sum of all the output power.
The maximum average secondary current is:
I OUT(MAX)
where
D2
D2 = 1 – DMAX – D3
the primary and secondary RMS currents are:
ILP(RMS) = 2 •ILP(MAX) •
ILS(RMS) = 2 •ILS(MAX) •
ILP(PEAK) = ISW(PEAK) = 2 • ILP(MAX)
ILS(PEAK) = ID(PEAK) = 2 • ILS(MAX)
The primary and second inductor values of the flyback
converter transformer can be determined using the following equations:
D 2 MAX • V 2 IN(MIN) • �
LP =
2 • POUT(MAX) • f
D2
3
D2 2 • (VOUT + VD)
2 •I OUT(MAX) • f
The primary to second turns ratio is:
NP
NS
=
LP
LS
Transformer leakage inductance (on either the primary
or secondary) causes a voltage spike to occur after the
MOSFET turn-off. This is increasingly prominent at higher
load currents, where more stored energy must be dissipated. In some cases a snubber circuit will be required
to avoid overvoltage breakdown at the MOSFET’s drain
node. There are different snubber circuits, and Application
Note 19 is a good reference on snubber design. An RCD
snubber is shown in Figure 7.
The snubber resistor value (RSN) can be calculated by the
following equation:
DMAX
3
LS =
Flyback Converter: Snubber Design
DMAX • VIN(MIN) • η
where h is the converter efficiency.
ILS(MAX) = ID(MAX) =
According to Figure 8, the primary and secondary peak
currents are:
RSN = 2 •
V 2 SN − VSN • VOUT •
NP
NS
I2 SW(PEAK) •L LK • f
where VSN is the snubber capacitor voltage. A smaller
VSN results in a larger snubber loss. A reasonable VSN is
2 to 2.5 times of:
VOUT • NP
NS
Rev G
For more information www.analog.com
19
LT3758/LT3758A
APPLICATIONS INFORMATION
LLK is the leakage inductance of the primary winding,
which is usually specified in the transformer characteristics. LLK can be obtained by measuring the primary
inductance with the secondary windings shorted. The
snubber capacitor value (CCN) can be determined using
the following equation:
CCN =
VSN
ΔVSN •RCN • f
where ∆VSN is the voltage ripple across CCN. A reasonable
∆VSN is 5% to 10% of VSN. The reverse voltage rating of
DSN should be higher than the sum of VSN and VIN(MAX).
Flyback Converter: Sense Resistor Selection
In a flyback converter, when the power switch is turned on,
the current flowing through the sense resistor (ISENSE) is:
ISENSE = ILP
Set the sense voltage at ILP(PEAK) to be the minimum of
the SENSE current limit threshold with a 20% margin. The
sense resistor value can then be calculated to be:
R SENSE =
80mV
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
equation:
TJ = TA + PFET • θJA = TA + PFET • (θJC + θCA)
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that absolute maximum ratings are not exceeded.
Flyback Converter: Output Diode Selection
The output diode in a flyback converter is subject to large
RMS current and peak reverse voltage stresses. A fast
switching diode with a low forward drop and a low reverse
leakage is desired. Schottky diodes are recommended if
the output voltage is below 100V.
Approximate the required peak repetitive reverse voltage
rating VRRM using:
N
VRRM > S • VIN(MAX) + VOUT
NP
The power dissipated by the diode is:
ILP(PEAK)
PD = IO(MAX) • VD
Flyback Converter: Power MOSFET Selection
and the diode junction temperature is:
For the flyback configuration, the MOSFET is selected
with a VDC rating high enough to handle the maximum
VIN, the reflected secondary voltage and the voltage spike
due to the leakage inductance. Approximate the required
MOSFET VDC rating using:
TJ = TA + PD • RθJA
BVDSS > VDS(PEAK)
Flyback Converter: Output Capacitor Selection
where
VDS(PEAK) = VIN(MAX) + VSN
The power dissipated by the MOSFET in a flyback converter is:
PFET = I2M(RMS) • RDS(ON) + 2 • V2DS(PEAK) • IL(MAX) •
CRSS • f/1A
The first term in this equation represents the conduction
losses in the device, and the second term, the switching
loss. CRSS is the reverse transfer capacitance, which is
usually specified in the MOSFET characteristics.
20
The RθJA to be used in this equation normally includes the
RθJC for the device, plus the thermal resistance from the
board to the ambient temperature in the enclosure. TJ must
not exceed the diode maximum junction temperature rating.
The output capacitor of the flyback converter has a similar
operation condition as that of the boost converter. Refer to
the Boost Converter: Output Capacitor Selection section
for the calculation of COUT and ESRCOUT.
The RMS ripple current rating of the output capacitors
in discontinuous operation can be determined using the
following equation:
IRMS(COUT),DISCONTINUOUS ≥ IO(MAX) •
4−(3 •D2)
3 •D2
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
Flyback Converter: Input Capacitor Selection
The input capacitor in a flyback converter is subject to
a large RMS current due to the discontinuous primary
current. To prevent large voltage transients, use a low
ESR input capacitor sized for the maximum RMS current.
The RMS ripple current rating of the input capacitors in
discontinuous operation can be determined using the following equation:
IRMS(CIN),DISCONTINUOUS ≥
POUT(MAX)
VIN(MIN) • η
•
4−(3 •DMAX )
3 •DMAX
SEPIC CONVERTER APPLICATIONS
The LT3758 can be configured as a SEPIC (single-ended
primary inductance converter), as shown in Figure 1. This
topology allows for the input to be higher, equal, or lower
than the desired output voltage. The conversion ratio as
a function of duty cycle is:
VOUT + VD
D
=
VIN
1−D
in continuous conduction mode (CCM).
In a SEPIC converter, no DC path exists between the input
and output. This is an advantage over the boost converter
for applications requiring the output to be disconnected
from the input source when the circuit is in shutdown.
Compared to the flyback converter, the SEPIC converter
has the advantage that both the power MOSFET and the
output diode voltages are clamped by the capacitors (CIN,
CDC and COUT), therefore, there is less voltage ringing
across the power MOSFET and the output diodes. The
SEPIC converter requires much smaller input capacitors
than those of the flyback converter. This is due to the fact
that, in the SEPIC converter, the inductor L1 is in series
with the input, and the ripple current flowing through the
input capacitor is continuous.
The maximum duty cycle (DMAX) occurs when the converter has the minimum input voltage:
DMAX =
VOUT + VD
VIN(MIN) + VOUT + VD
SEPIC Converter: Inductor and Sense Resistor Selection
As shown in Figure 1, the SEPIC converter contains two
inductors: L1 and L2. L1 and L2 can be independent, but can
also be wound on the same core, since identical voltages
are applied to L1 and L2 throughout the switching cycle.
For the SEPIC topology, the current through L1 is the
converter input current. Based on the fact that, ideally, the
output power is equal to the input power, the maximum
average inductor currents of L1 and L2 are:
IL1(MAX) =IIN(MAX) =IO(MAX) •
DMAX
1−DMAX
IL2(MAX) =IO(MAX)
In a SEPIC converter, the switch current is equal to IL1 +
IL2 when the power switch is on, therefore, the maximum
average switch current is defined as:
ISW(MAX) =IL1(MAX) +IL2(MAX) =IO(MAX) •
1
1−DMAX
and the peak switch current is:
1
⎛ χ⎞
ISW(PEAK) = ⎜ 1+ ⎟ •IO(MAX) •
⎝ 2⎠
1−DMAX
The constant c in the preceding equations represents the
percentage peak-to-peak ripple current in the switch, relative to ISW(MAX), as shown in Figure 9. Then, the switch
ripple current ∆ISW can be calculated by:
∆ISW = c • ISW(MAX)
The inductor ripple currents ∆IL1 and ∆IL2 are identical:
SEPIC Converter: Switch Duty Cycle and Frequency
∆IL1 = ∆IL2 = 0.5 • ∆ISW
For a SEPIC converter operating in CCM, the duty cycle
of the main switch can be calculated based on the output
voltage (VOUT), the input voltage (VIN) and the diode forward voltage (VD).
The inductor ripple current has a direct effect on the
choice of the inductor value. Choosing smaller values of
∆IL requires large inductances and reduces the current
loop gain (the converter will approach voltage mode).
Rev G
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21
LT3758/LT3758A
APPLICATIONS INFORMATION
Accepting larger values of ∆IL allows the use of low inductances, but results in higher input current ripple, greater
core losses, and in some cases, subharmonic oscillation.
A good starting point for c is 0.2 and careful evaluation
of system stability should be made to ensure adequate
design margin.
IL1(MAX)
χ 2 L2
I
=I
• 1+
L2(RMS) L2(MAX)
12
t
DTS
TS
3758 F09
Figure 9. The Switch Current Waveform of the SEPIC Converter
Given an operating input voltage range, and having chosen the operating frequency and ripple current in the
inductor, the inductor value (L1 and L2 are independent)
of the SEPIC converter can be determined using the following equation:
L1= L2 =
VIN(MIN)
0.5 • ΔISW • f
•DMAX
By making L1 = L2, and winding them on the same core,
the value of inductance in the preceding equation is
replaced by 2L, due to mutual inductance:
VIN(MIN)
ΔISW • f
This maintains the same ripple current and energy storage
in the inductors. The peak inductor currents are:
IL2(PEAK) = IL2(MAX) + 0.5 • ∆IL2
The RMS inductor currents are:
χ 2 L1
IL1(RMS) =IL1(MAX) • 1+
12
22
ΔIL2
IL2 (MAX)
In a SEPIC converter, when the power switch is turned on,
the current flowing through the sense resistor (ISENSE) is
the switch current.
Set the sense voltage at ISENSE(PEAK) to be the minimum
of the SENSE current limit threshold with a 20% margin.
The sense resistor value can then be calculated to be:
R SENSE =
80 mV
ISW(PEAK)
SEPIC Converter: Power MOSFET Selection
For the SEPIC configuration, choose a MOSFET with a
VDC rating higher than the sum of the output voltage and
input voltage by a safety margin (a 10V safety margin is
usually sufficient).
The power dissipated by the MOSFET in a SEPIC converter is:
•DMAX
IL1(PEAK) = IL1(MAX) + 0.5 • ∆IL1
χL2 =
Based on the preceding equations, the user should choose
the inductors having sufficient saturation and RMS current ratings.
For most SEPIC applications, the equal inductor values
will fall in the range of 1µH to 100µH.
ΔIL1
∆ISW = χ • ISW(MAX)
ISW(MAX)
L=
χL1 =
where
ISW
where
PFET = I2SW(MAX) • RDS(ON) • DMAX
+ 2 • (VIN(MIN) + VOUT)2 • IL(MAX) • CRSS • f/1A
The first term in this equation represents the conduction
losses in the device, and the second term, the switching
loss. CRSS is the reverse transfer capacitance, which is
usually specified in the MOSFET characteristics.
For maximum efficiency, RDS(ON) and CRSS should be
minimized. From a known power dissipated in the power
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
MOSFET, its junction temperature can be obtained using
the following equation:
TJ = TA + PFET • θJA = TA + PFET • (θJC + θCA)
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFET temperature in steady state to ensure that absolute maximum ratings are not exceeded.
SEPIC Converter: Output Diode Selection
To maximize efficiency, a fast switching diode with a low
forward drop and low reverse leakage is desirable. The
average forward current in normal operation is equal to
the output current, and the peak current is equal to:
1
⎛ χ⎞
ID(PEAK) = ⎜ 1+ ⎟ •IO(MAX) •
⎝ 2⎠
1−DMAX
It is recommended that the peak repetitive reverse voltage
rating VRRM is higher than VOUT + VIN(MAX) by a safety
margin (a 10V safety margin is usually sufficient).
CDC has nearly a rectangular current waveform. During
the switch off-time, the current through CDC is IIN, while
approximately –IO flows during the on-time. The RMS
rating of the coupling capacitor is determined by the following equation:
IRMS(CDC) > IO(MAX) •
VOUT + VD
VIN(MIN)
A low ESR and ESL, X5R or X7R ceramic capacitor works
well for CDC.
INVERTING CONVERTER APPLICATIONS
The LT3758 can be configured as a dual-inductor inverting
topology, as shown in Figure 10. The VOUT to VIN ratio is:
VOUT − VD
D
=−
VIN
1−D
in continuous conduction mode (CCM).
The power dissipated by the diode is:
L1
VIN
PD = IO(MAX) • VD
+
and the diode junction temperature is:
CDC
+
L2
–
–
CIN
COUT
LT3758
TJ = TA + PD • RθJA
GATE
The RθJA used in this equation normally includes the RθJC
for the device, plus the thermal resistance from the board,
to the ambient temperature in the enclosure. TJ must not
exceed the diode maximum junction temperature rating.
SEPIC Converter: Selecting the DC Coupling Capacitor
The DC voltage rating of the DC coupling capacitor (CDC,
as shown in Figure 1) should be larger than the maximum
input voltage:
D1
SENSE
RSENSE
GND
+
3758 F10
Figure 10. A Simplified Inverting Converter
SEPIC Converter: Output and Input Capacitor Selection
The selections of the output and input capacitors of
the SEPIC converter are similar to those of the boost
converter. Please refer to the Boost Converter: Output
Capacitor Selection and Boost Converter: Input Capacitor
Selection sections.
M1
VOUT
+
Inverting Converter: Switch Duty Cycle and Frequency
For an inverting converter operating in CCM, the duty
cycle of the main switch can be calculated based on the
negative output voltage (VOUT) and the input voltage (VIN).
The maximum duty cycle (DMAX) occurs when the converter has the minimum input voltage:
DMAX =
VOUT − VD
VOUT − VD − VIN(MIN)
VCDC > VIN(MAX)
Rev G
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23
LT3758/LT3758A
APPLICATIONS INFORMATION
Inverting Converter: Inductor, Sense Resistor, Power
MOSFET, Output Diode and Input Capacitor Selections
The selections of the inductor, sense resistor, power
MOSFET, output diode and input capacitor of an inverting converter are similar to those of the SEPIC converter.
Please refer to the corresponding SEPIC converter
sections.
Inverting Converter: Output Capacitor Selection
The inverting converter requires much smaller output
capacitors than those of the boost, flyback and SEPIC
converters for similar output ripples. This is due to the
fact that, in the inverting converter, the inductor L2 is
in series with the output, and the ripple current flowing
through the output capacitors are continuous. The output
ripple voltage is produced by the ripple current of L2 flowing through the ESR and bulk capacitance of the output
capacitor:
⎛
⎞
1
ΔVOUT(P–P) = ΔIL2 • ⎜ ESRCOUT +
8 • f •COUT ⎟⎠
⎝
After specifying the maximum output ripple, the user can
select the output capacitors according to the preceding
equation.
The ESR can be minimized by using high quality X5R or
X7R dielectric ceramic capacitors. In many applications,
ceramic capacitors are sufficient to limit the output voltage ripple.
The RMS ripple current rating of the output capacitor
needs to be greater than:
IRMS(COUT) > 0.3 • ∆IL2
Inverting Converter: Selecting the DC Coupling Capacitor
The DC voltage rating of the DC coupling capacitor (CDC,
as shown in Figure 10) should be larger than the maximum input voltage minus the output voltage (negative
voltage):
VCDC > VIN(MAX) – VOUT
24
CDC has nearly a rectangular current waveform. During
the switch off-time, the current through CDC is IIN, while
approximately –IO flows during the on-time. The RMS
rating of the coupling capacitor is determined by the following equation:
IRMS(CDC) >IO(MAX) •
DMAX
1−DMAX
A low ESR and ESL, X5R or X7R ceramic capacitor works
well for CDC.
Board Layout
The high speed operation of the LT3758 demands careful
attention to board layout and component placement. The
Exposed Pad of the package is the only GND terminal of
the IC, and is important for thermal management of the
IC. Therefore, it is crucial to achieve a good electrical and
thermal contact between the Exposed Pad and the ground
plane of the board. For the LT3758 to deliver its full output
power, it is imperative that a good thermal path be provided to dissipate the heat generated within the package.
It is recommended that multiple vias in the printed circuit
board be used to conduct heat away from the IC and into
a copper plane with as much area as possible.
To prevent radiation and high frequency resonance problems, proper layout of the components connected to the
IC is essential, especially the power paths with higher di/
dt. The following high di/dt loops of different topologies
should be kept as tight as possible to reduce inductive
ringing:
• In boost configuration, the high di/dt loop contains
the output capacitor, the sensing resistor, the power
MOSFET and the Schottky diode.
• In flyback configuration, the high di/dt primary loop
contains the input capacitor, the primary winding, the
power MOSFET and the sensing resistor. The high di/
dt secondary loop contains the output capacitor, the
secondary winding and the output diode.
• In SEPIC configuration, the high di/dt loop contains
the power MOSFET, sense resistor, output capacitor,
Schottky diode and the coupling capacitor.
Rev G
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LT3758/LT3758A
APPLICATIONS INFORMATION
• In inverting configuration, the high di/dt loop contains
power MOSFET, sense resistor, Schottky diode and the
coupling capacitor.
The small-signal components should be placed away
from high frequency switching nodes. For optimum load
regulation and true remote sensing, the top of the output
voltage sensing resistor divider should connect independently to the top of the output capacitor (Kelvin connection), staying away from any high dV/dt traces. Place the
divider resistors near the LT3758 in order to keep the high
impedance FBX node short.
Check the stress on the power MOSFET by measuring its
drain-to-source voltage directly across the device terminals (reference the ground of a single scope probe directly
to the source pad on the PC board). Beware of inductive
ringing, which can exceed the maximum specified voltage
rating of the MOSFET. If this ringing cannot be avoided,
and exceeds the maximum rating of the device, either
choose a higher voltage device or specify an avalancherated power MOSFET.
Figure 11 shows the suggested layout of the 10V to
40V input, 48V output boost converter in the Typical
Applications section.
CIN
CC2
L1
R3
RC
R1
1
R2
2
CSS
3
8
RT
4
7
5
6
LT3758
R4
CC1
VIN
10
9
CVCC
1
2
RS
VIAS TO GROUND
PLANE
COUT2
8
M1
7
3
6
4
5
COUT1
D1
VOUT
3758 F11
Figure 11. Suggested Layout of the 10V to 40V Input, 48V Output
Boost Converter in the Typical Applications Section
Rev G
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25
LT3758/LT3758A
APPLICATIONS INFORMATION
Recommended Component Manufacturers
Some of the recommended component manufacturers
are listed in Table 2.
Table 2. Recommended Component Manufacturers
VENDOR
COMPONENTS
WEB ADDRESS
Capacitors
avx.com
Inductors,
Transformers
bhelectronics.com
Coilcraft
Inductors
coilcraft.com
Cooper Bussmann
Inductors
bussmann.com
Diodes
diodes.com
MOSFETs
fairchildsemi.com
Diodes
generalsemiconductor.
com
AVX
BH Electronics
Diodes, Inc
Fairchild
General Semiconductor
International Rectifier
MOSFETs, Diodes
irf.com
IRC
Sense Resistors
irctt.com
Tantalum Capacitors
kemet.com
Kemet
Magnetics Inc
Toroid Cores
mag-inc.com
Microsemi
Diodes
microsemi.com
Murata-Erie
Inductors, Capacitors
murata.co.jp
Capacitors
nichicon.com
Diodes
onsemi.com
Panasonic
Capacitors
panasonic.com
Pulse
Inductors
pulseeng.com
Sanyo
Capacitors
sanyo.co.jp
Sumida
Inductors
sumida.com
Taiyo Yuden
Capacitors
t-yuden.com
Nichicon
On Semiconductor
Capacitors, Inductors
component.tdk.com
Thermalloy
TDK
Heat Sinks
aavidthermalloy.com
Tokin
Capacitors
nec-tokinamerica.com
Toko
Inductors
tokoam.com
United Chemi-Con
Capacitors
chemi-com.com
Vishay/Dale
Resistors
vishay.com
Vishay/Siliconix
MOSFETs
vishay.com
Würth Elektronik
Inductors
we-online.com
Capacitors
vishay.com
Small-Signal Discretes
zetex.com
Vishay/Sprague
Zetex
26
Rev G
For more information www.analog.com
LT3758/LT3758A
TYPICAL APPLICATIONS
10V to 40V Input, 48V Output Boost Converter
VIN
10V TO 40V
CIN
4.7µF
50V
X7R
×2
R3
200k
L1
18.7µH
VIN
D1
SHDN/UVLO
R4
32.4k
SYNC
LT3758
SENSE
RT
SS
RT
41.2k
300kHz
CC2
100pF
+
FBX
GND INTVCC
VC
CSS
0.68µF
R2
464k
M1
GATE
RC
10k
CC1
10nF
CVCC
4.7µF
10V
X5R
VOUT
48V
1A
RS
0.012Ω
COUT1
100µF
63V
R1
15.8k
COUT2
4.7µF
50V
X7R
×4
3758 TA02a
CIN, COUT2: MURATA GRM32ER71H475KA88L
COUT1: PANASONIC ECG EEV-TG1J101UP
D1: VISHAY SILICONIX 30BQ060
L1: PULSE PB2020.223
M1: VISHAY SILICONIX SI7460DP
Efficiency vs Output Current
Start-Up Waveforms
100
VIN = 24V
90
EFFICIENCY (%)
80
VIN = 40V
70
VOUT
20V/DIV
VIN = 24V
60
50
IL1
2A/DIV
40
30
20
10
0.001
VIN = 10V
0.1
0.01
OUTPUT CURRENT (A)
5ms/DIV
3758 TA02c
1
3758 TA02b
Rev G
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27
LT3758/LT3758A
TYPICAL APPLICATIONS
10V to 40V Input, 48V/2.5A Output Boost Converter
VIN
10V TO 40V
+
CIN1
33µF
63V
CIN2
4.7µF
100V
X5R
×3
R3
1M
D1
SHDN/UVLO
R4
191k
SYNC
RT
63.4k
200kHz
L1
10µH
VIN
LT3758A
RT
SS
RC
10k
CC2
100pF
M2
R2
580k
SENSE
FBX
GND INTVCC
VC
CSS
0.1µF
M1
GATE
CC1
10nF
+
CVCC
4.7µF
10V
X5R
RS
0.004Ω
1W
VOUT
48V
2.5A
R1
20.0k
COUT1
56µF
63V
COUT2
4.7µF
100V
X5R
×3
3758 TA03a
CIN1, SUN ELEC. 63HVH33M
COUT1: SUN ELEC. 63HVH56M
D1: DIODES SBRT10U60D1
L1: WURTH ELEC. WE-7443641000
M1, M2: INFINEON BSC066N06NS
Efficiency vs Output Current
100
90
VIN = 10V
80
EFFICIENCY (%)
Load Step Response at VIN=24V
VIN = 40V
VOUT
2V/DIV
AC-COUPLED
70
60
VIN = 24V
2.0A
IOUT
1A/DIV
0.5A
50
40
30
20
500µs/DIV
10
0
0.01
0.1
1
OUTPUT CURRENT (A)
3758 TA03c
10
3758 TA03b
28
Rev G
For more information www.analog.com
LT3758/LT3758A
TYPICAL APPLICATIONS
36V to 72V Input, 90V/1.8A Output Boost Converter
VIN
36V TO 72V
CIN
4.7µF
100V
X5R
×2
R3
1M
L1
33µH
VIN
D1
SHDN/UVLO
R4
37.4k
SYNC
LT3758A
SENSE
RT
SS
RT
49.9k
250kHz
RC
16.2k
CC2
100pF
+
FBX
GND INTVCC
VC
CSS
0.1µF
R2
549k
M1
GATE
CC1
10nF
CVCC
4.7µF
10V
X5R
VOUT
90V
1.8A
RS
0.010Ω
COUT1
10µF
100V
R1
10.0k
COUT2
4.7µF
100V
X5R
×3
3758 TA04a
COUT1: SUN ELEC. 100HVH10M
D1: DIODES SBR8M100P5
L1: WURTH ELEC. WE-7443643300
M1: INFINEON BSC190N12NS3
Efficiency vs Output Current
Load Step Response at VIN=48V
100
90
VIN = 72V
EFFICIENCY (%)
80
VIN = 48V
70
60
50
VOUT
2V/DIV
AC-COUPLED
VIN = 36V
IOUT 1.5A
1A/DIV
0.7A
40
30
20
500µs/DIV
10
0
0.01
0.1
1
OUTPUT CURRENT (A)
3758 TA04c
10
3758 TA04b
Rev G
For more information www.analog.com
29
LT3758/LT3758A
TYPICAL APPLICATIONS
12V Output Nonisolated Flyback Power Supply
VIN
36V TO 72V
D1
CIN
2.2µF
100V
X7R
0.022µF
100V
1M
6.2k
VIN
DSN
SHDN/UVLO
44.2k
SYNC
LT3758
10k
100pF
4,5,6
(PARALLEL)
SW
GATE
FBX
GND INTVCC
VC
0.47µF
T1
1,2,3
(SERIES)
105k
1%
M1
SENSE
RT
SS
63.4k
200kHz
VOUT
12V
1.2A
10nF
1N4148
CVCC
4.7µF
10V
X5R
5.1Ω
15.8k
1%
0.030Ω
COUT
47µF
X5R
3758 TA05a
CIN: MURATA GRM32ER72A225KA35L
T1: COILTRONICS VP2-0066
M1: VISHAY SILICONIX SI4848DY
D1: ON SEMICONDUCTOR MBRS360T3G
DSN: VISHAY SILICONIX ES1D
COUT: MURATA GRM32ER61C476ME15L
Efficiency vs Output Current
100
90
Start-Up Waveform
VIN = 48V
VIN = 48V
EFFICIENCY (%)
80
70
60
VOUT
5V/DIV
50
40
5ms/DIV
30
20
0.01
0.1
1
OUTPUT CURRENT (A)
3758 TA05c
10
3758 TA05b
Frequency Foldback Waveforms
When Output Short-Circuit
VIN = 48V
VOUT
5V/DIV
VSW
50V/DIV
20µs/DIV
30
3758 TA05d
Rev G
For more information www.analog.com
LT3758/LT3758A
TYPICAL APPLICATIONS
VFD (Vacuum Fluorescent Display) Flyback Power Supply
D1
VIN
9V TO 16V
COUT2
2.2µF
100V
X7R
4
CIN
22µF
25V
D2
178k
22Ω
SHDN/UVLO
220pF
32.4k
SYNC
LT3758
47pF
95.3k
GATE
VOUT2
64V
40mA
COUT1
1µF
100V
X7R
6
FBX
GND INTVCC
VC
0.47µF
5
M1 SW
SENSE
RT
SS
63.4k
200kHz
T1
1, 2, 3
VIN
VOUT
96V
80mA
10k
10nF
CVCC
4.7µF
10V
X5R
0.019Ω
0.5W
1.62k
3758 TA06a
CIN: MURATA GRM32ER61E226KE15L
COUT1: MURATA GRM31CR72A105K01L
COUT2: MURATA GRM32ER72A225KA35L
D1: VISHAY SILICONIX ES1D
D2: VISHAY SILICONIX ES1C
M1: VISHAY SILICONIX Si4100DY
T1: COILTRONICS VP1-0102
(*PRIMARY = 3 WINDINGS IN PARALLEL)
Start-Up Waveforms
VIN = 12V
Switching Waveforms
VOUT1
VOUT2
VOUT1
1V/DIV
(AC)
VOUT2
1V/DIV
(AC)
VSW
50V/DIV
VOUT1,
VOUT2
20V/DIV
10ms/DIV
3758 TA06b
2µs/DIV
3758 TA06c
Rev G
For more information www.analog.com
31
LT3758/LT3758A
TYPICAL APPLICATIONS
36V to 72V Input, 3.3V Output Isolated Telecom Power Supply
PA1277NL
4
5
VIN
36V TO 72V
0.022µF
100V
CIN
2.2µF
100V
X7R
5.6k
VIN
SHDN/UVLO
44.2k
SYNC
FDC2512
10Ω
GATE
SENSE
INTVCC
4.7µF
25V
X5R
FBX
RT
63.4k
200kHz
SS
GND
VOUT-
8
BAS516
2
4.7µF
25V
X5R
0.03Ω
LT3758
UPS840
7
3
1M
COUT
100µF
6.3V
×3
6
BAV21W
BAT54CWTIG
100pF
100k
1
16k
274Ω
VC
BAS516
47pF
LT4430
PS2801-1
0.47µF
VOUT+
3.3V
3A
2200pF
250VAC
0.47µF
VIN
1µF
GND COMP
OC 0.5V FB
OPTO
47nF
2k
22.1k
3758 TA07a
Efficiency vs Output Current
100
90
EFFICIENCY (%)
80
VIN = 36V
70
VIN = 72V
60
50
VIN = 48V
40
30
20
0.01
0.1
1
OUTPUT CURRENT (A)
10
3758 TA07b
32
Rev G
For more information www.analog.com
LT3758/LT3758A
TYPICAL APPLICATIONS
18V to 72V Input, 24V Output SEPIC Converter
VIN
18V TO 72V
+
CIN2
2.2µF
100V
X7R
CIN1
10µF
100V
232k
VIN
L1A
SHDN/UVLO
20k
•
CDC
2.2µF
100V
X7R, ×2
D1
VOUT
24V
1A
LT3758A
GATE
SYNC
M1
GND
VC
0.47µF
280k
1%
0.025Ω
RT
SS
41.2k
300kHz
L1B
•
SENSE
10k
10nF
FBX
INTVCC
20k
1%
CVCC
4.7µF
10V
X5R
+
COUT1
10µF
25V
X5R
×4
COUT1
33µF
35V
×2
3758 TA08a
CIN1: PANASONIC EEE2AA100UP
CIN2, CDC: TAIYO YUDEN HMK325B7225KN-T
COUT1: MURATA GRM31CR61E106KA12L
COUT2: KEMET T495X336K035AS
L1A, L1B: COILTRONICS DRQ127-470
M1: FAIRCHILD SEMICONDUCTOR FDMS2572
D1: ON SEMICONDUCTOR MBRS3100T3G
Efficiency vs Output Current
Load Step Waveform
100
VIN = 48V
90
VIN = 18V
VOUT
2V/DIV
AC-COUPLED
EFFICIENCY (%)
80
70
VIN = 72V
VIN = 48V
60
50
IOUT 1A
1A/DIV 0A
40
30
500µs/DIV
20
10
0.001
0.1
0.01
OUTPUT CURRENT (A)
1
3758 TA08b
Frequency Foldback Waveforms
When Output Short-Circuit
Start-Up Waveform
VIN = 48V
VIN = 48V
VOUT
20V/DIV
VOUT
10V/DIV
VSW
50V/DIV
IL1A + IL1B
1A/DIV
IL1A + IL1B
2A/DIV
2ms/DIV
3758 TA08c
3758 TA08d
50µs/DIV
3758 TA08e
Rev G
For more information www.analog.com
33
LT3758/LT3758A
TYPICAL APPLICATIONS
10V to 40V Input, –12V Output Inverting Converter
CIN2
4.7µF
50V
X7R
×2
CIN1
4.7µF
50V
×2
R1
200k
VIN
L1A
SHDN/UVLO
R2
32.4k
•
CDC
2.2µF
100V
X7R, ×2
L1B
LT3758A
GATE
SYNC
M1
D1
SENSE
105k
0.015Ω
RT
SS
GND
VC
41.2k
300kHz
VOUT
–12V
2A
•
+
FBX
INTVCC
7.5k
0.47µF
10k
6.8nF
COUT1
22µF
16V
X5R
×4
CVCC
4.7µF
10V
X5R
+
VIN
10V TO 40V
COUT2
47µF
20V
×2
3758 TA09a
CIN1: KEMET T495X475K050AS
CIN2, CDC: MURATA GRM32ER71H475KA88L
COUT1: MURATA GRM32ER61C226KE20
COUT2: KEMET T495X476K020AS
D1: VISHAY SILICONIX 30BQ060
L1A, L1B: COILTRONICS DRQ127-150
M1: VISHAY SILICONIX SI7850DP
Efficiency vs Output Current
Load Step Waveforms
100
EFFICIENCY (%)
80
VIN = 24V
VIN = 10V
90
VIN = 24V
VOUT
1V/DIV
AC-COUPLED
VIN = 40V
70
60
50
IOUT 1A
1A/DIV 0A
40
30
500µs/DIV
20
10
0.001
0.1
1
0.01
OUTPUT CURRENT (A)
10
3758 TA09b
Frequency Foldback Waveforms
When Output Short-Circuit
Start-Up Waveforms
VIN = 24V
VOUT
5V/DIV
3758 TA09c
VOUT VIN = 24V
10V/DIV
VSW
20V/DIV
IL1A + IL1B
2A/DIV
5ms/DIV
34
3758 TA09d
IL1A + IL1B
5A/DIV
50µs/DIV
3758 TA09e
Rev G
For more information www.analog.com
LT3758/LT3758A
PACKAGE DESCRIPTION
DD Package
10-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1699 Rev C)
0.70 ±0.05
3.55 ±0.05
1.65 ±0.05
2.15 ±0.05 (2 SIDES)
PACKAGE
OUTLINE
0.25 ± 0.05
0.50
BSC
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
R = 0.125
TYP
6
3.00 ±0.10
(4 SIDES)
0.40 ± 0.10
10
1.65 ± 0.10
(2 SIDES)
PIN 1 NOTCH
R = 0.20 OR
0.35 × 45°
CHAMFER
PIN 1
TOP MARK
(SEE NOTE 6)
0.200 REF
0.75 ±0.05
0.00 – 0.05
5
1
(DD) DFN REV C 0310
0.25 ± 0.05
0.50 BSC
2.38 ±0.10
(2 SIDES)
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2).
CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
Rev G
For more information www.analog.com
35
LT3758/LT3758A
PACKAGE DESCRIPTION
MSE Package
10-Lead Plastic MSOP, Exposed Die Pad
(Reference LTC DWG # 05-08-1664 Rev I)
BOTTOM VIEW OF
EXPOSED PAD OPTION
1.88 ±0.102
(.074 ±.004)
5.10
(.201)
MIN
1
0.889 ±0.127
(.035 ±.005)
1.68 ±0.102
(.066 ±.004)
0.05 REF
10
0.305 ± 0.038
(.0120 ±.0015)
TYP
RECOMMENDED SOLDER PAD LAYOUT
3.00 ±0.102
(.118 ±.004)
(NOTE 3)
DETAIL “B”
CORNER TAIL IS PART OF
DETAIL “B” THE LEADFRAME FEATURE.
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
10 9 8 7 6
DETAIL “A”
0° – 6° TYP
1 2 3 4 5
GAUGE PLANE
0.53 ±0.152
(.021 ±.006)
DETAIL “A”
0.18
(.007)
SEATING
PLANE
0.86
(.034)
REF
1.10
(.043)
MAX
0.17 – 0.27
(.007 – .011)
TYP
0.50
(.0197)
BSC
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD
SHALL NOT EXCEED 0.254mm (.010") PER SIDE.
36
0.497 ±0.076
(.0196 ±.003)
REF
3.00 ±0.102
(.118 ±.004)
(NOTE 4)
4.90 ±0.152
(.193 ±.006)
0.254
(.010)
0.29
REF
1.68
(.066)
3.20 – 3.45
(.126 – .136)
0.50
(.0197)
BSC
1.88
(.074)
0.1016 ±0.0508
(.004 ±.002)
MSOP (MSE) 0213 REV I
Rev G
For more information www.analog.com
LT3758/LT3758A
REVISION HISTORY
REV
DATE
DESCRIPTION
A
3/10
Deleted Bullet from Features and Last Line of Description
Updated All Sections to Include H-Grade and Military Grade
B
C
D
5/10
5/11
07/12
PAGE NUMBER
1
2 to 7
Deleted Vendor Telephone Information from Table 2 in Applications Information Section
26
Revised TA04 and TA04c in Typical Applications
29
Replaced Related Parts List
36
Revised last sentence of SYNC Pin description
8
Updated Block Diagram
9
Revised value in last sentence of Programming Turn-on and Turn-off Thresholds in the SHDN/UVLO Pin Section
10
Revised penultimate sentence of Operating Frequency and Synchronization section
13
Revised MP-grade temperature range in Absolute Maximum Ratings and Order Information
2
Revised Note 2
4
Revised formula in Applications Information
19
Added LT3758A version
Throughout
Updated Block Diagram
9
Updated Programming the Output Voltage section
13
Updated Loop Compensation section
14
Updated the schematic and Load Step Waveforms in the Typical Applications section
31, 32
E
6/17
Text Clarification
16, 22
F
01/19
Added New Boost Circuits & Graphs
28, 29
G
08/21
Updated Related Parts Section with LT8361/LT8362/LT8364 Boost Converters
38
AECQ100 Statement
1
Added Automotive Products
2
Revised units
5
Rev G
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications
subject to change without notice. No license For
is granted
implication or
otherwise under any patent or patent rights of Analog Devices.
more by
information
www.analog.com
37
LT3758/LT3758A
TYPICAL APPLICATION
8V to 72V Input, 12V Output SEPIC Converter
CIN
2.2µF
100V
X7R
×2
154k
VIN
L1A
SHDN/UVLO
32.4k
LT3758
SYNC
GATE
•
M1
Si7456DP
90
VOUT
12V
2A
+
L1B
•
0.012Ω
105k
1%
COUT1
47µF
20V
×2
FBX
GND INTVCC
VC
41.2k
300kHz
100
CDC
2.2µF
100V
D1
X7R, ×2 MBRS3100T3G
SENSE
RT
SS
Efficiency vs Output Current
10k
10nF
70
VIN = 8V
VIN = 42V
VIN = 72V
60
50
40
30
20
15.8k
1%
0.47µF
80
EFFICIENCY (%)
VIN
8V TO 72V
COUT2
10µF
16V
X5R
×4
CVCC
4.7µF
10V
X5R
10
0.001
0.01
0.1
1
OUTPUT CURRENT (A)
10
3758 TA10b
3758 TA10a
L1A, L1B: COILTRONICS DRQ127-220
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT3757A
40V Flyback, Boost, SEPIC and Inverting Controllers
2.9V ≤ VIN ≤ 40V, with Small Packages and Powerful Gate Drive
LT3759
40V Flyback, Boost, SEPIC and Inverting Controller
1.6V ≤ VIN ≤ 42V, with Small Package and Powerful Gate Drive
LT8300/LT8303
100V Isolated Flyback Converters in SOT-23
Monolithic No-Opto Flybacks with Integrated 240mA/500mA Switch
LT8304/LT8304-1
100V Isolated Flyback Converter
Monolithic No-Opto Flyback with Integrated 2A Switch, SO-8 Package
LT3748
100V Isolated Flyback Controller
5V ≤ VIN ≤ 100V, No-Opto Flyback, MSOP-16 with High Voltage Spacing
LT8301/LT8302
42V Isolated Flyback Converters
Monolithic No-Opto Flybacks with Integrated 1.2A/3.6A, 65V Switch
LT3798
Offline Isolated No Opto-Coupler Flyback Controller with
Active PFC
VIN and VOUT Limited Only by External Components
LT3799/LT3799-1
Offline Isolated Flyback LED Controllers with Active PFC
VIN and VOUT Limited Only by External Components
LT3957A
Boost, Flyback, SEPIC and Inverting Converter with 5A,
40V Switch
3V ≤ VIN ≤ 40V, 100kHz to 1MHz Programmable Operation Frequency,
5mm × 6mm QFN Package
LT3958
Boost, Flyback, SEPIC and Inverting Converter with 3.3A, 5V ≤ VIN ≤ 80V, 100kHz to 1MHz Programmable Operation Frequency,
5mm × 6mm QFN Package
84V Switch
LT8361
100V, 2A, Low IQ Boost/SEPIC/Inverting Converter
VIN = 2.8V to 60V, VOUT(MAX) = 100V, IQ = 6µA (Burst Mode Operation),
MSOP-16(12)E, 3mm × 3mm DFN-10 Packages
LT8362
60V, 2A, Low IQ Boost/SEPIC/Inverting Converter
VIN = 2.8V to 60V, VOUT(MAX) = 60V, IQ = 9µA (Burst Mode Operation),
MSOP-16(12)E Package
LT8364
60V, 4A, Low IQ Boost/SEPIC/Inverting Converter
VIN = 2.8V to 60V, VOUT(MAX) = 60V, IQ = 9µA (Burst Mode Operation),
MSOP-16(12)E, 4mm × 3mm DFN-12 Packages
38
Rev G
08/21
www.analog.com
For more information www.analog.com
ANALOG DEVICES, INC. 2009-2021
