LTC5536ES6#TRPBF

LTC5536 600MHz to 7GHz Precision RF Detector with Fast Comparator Output U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 600MHz to 7GHz* Wide Input Power Range: –26dBm to 12dBm Fast Comparator Output with Latch Enable 25ns Response Time with 0dBm RF Input Level Rail-to-Rail Output Swing Comparator Output Current: ±20mA Wide VCC Range of 2.7V to 5.5V Low Operating Current: 2mA Available in a Low Profile (1mm) SOT-23 Package The LTC®5536 is an RF power detector for RF applications operating in the 600MHz to 7GHz range. A temperature compensated Schottky diode peak detector and fast comparator are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single cell lithium-ion or three cell NiMH battery. RF Signal Presence Detectors for: 802.11a, 802.11b, 802.11g, 802.15 Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector RF ID Tag Reader The LTC5536 operates with RF input power levels from –26dBm to 12dBm. U APPLICATIO S ■ ■ ■ The response time from the RF input to VOUT can be as little as 20ns. The comparator output is latched when LEN is high or is transparent when LEN is low. , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Operation at higher frequencies is possible with reduced performance. U ■ The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is compared against a reference voltage at VM. TYPICAL APPLICATIO VM Comparator Switching Voltage vs RF Input Power, 600MHz – 7GHz 3200 600MHz to 7GHz RF Power Detector RF INPUT LTC5536 1 VCC 6 RFIN VCC 100pF 2 GND VM 3 V M REFERENCE VOUT LEN 5 4 DISABLE ENABLE 0.1µF VM SWITCHING VOLTAGE (mV) 33pF 2800 2400 2000 1600 600MHz 1000MHz 2000MHz 3000MHz 4000MHz 5000MHz 6000MHz 7000MHz VCC = 3.6V VLEN = 0V TA = 25°C 1200 800 400 5536 TA01 0 –28 –24 –20 –16 –12 –8 –4 0 4 INPUT RF POWER (dBm) 8 12 5536 TA01b 5536f 1 LTC5536 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC, VOUT, VM, LEN .................................... –0.3V to 6V RFIN Voltage ...................................(VCC ± 1.5V) to 6.5V IVOUT .................................................................. ±25mA Operating Temperature Range (Note 2) .. – 40°C to 85°C Maximum Junction Temperature ......................... 125°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C ORDER PART NUMBER TOP VIEW RFIN 1 6 VCC GND 2 5 VOUT VM 3 LTC5536ES6 4 LEN S6 PART MARKING S6 PACKAGE 6-LEAD PLASTIC TSOT-23 TJMAX = 125°C, θJA = 250°C/W LBDS Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, VM = 160mV unless otherwise noted. PARAMETER CONDITIONS MIN ● VCC Operating Voltage TYP 2.7 ● 2.1 MAX UNITS 5.5 V IVCC Operating Current IVOUT = 0mA, VM = 0.5V VOUT VOL (No RF Input) ISINK = 20mA, VM = 0.5V 0.8 V VOUT VOH (No RF Input) ISOURCE = 20mA, VM = 0V VCC – 0.4 V VOUT Output Current ● VM Voltage Range ● VM Input Current ● –0.5 ±15 VM Switch Point (No RF Input) VOUT Low to High VOUT High to Low ● 65 LEN Input Current LEN = 3.6V ● 22 LEN Switch Point Low to High High to Low ● ● 1.5 3 mA ±20 100 90 mA VCC -1. 8 V 0.5 µA 135 mV mV 42 µA 0.5 V V RFIN Input Frequency Range (Note 5) RFIN Input Power Range RF Frequency = 600MHz to 7GHz (Note 3, 4) VCC = 2.7V to 5.5V RFIN AC Input Resistance F = 1000MHz, Pin = –25dBm 220 Ω RFIN Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.65 pF Response Time ∆VRF = 1VP-P, fRF = 1000MHz, VM = 0.15V, VOUT Low to High Transition 20 ns tr VOUT Rise Time 0.5V to 3V 2 ns tf VOUT Fall Time 3V to 0.5V 2 ns Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. 600 to 7000 MHz –26 to 12 dBm Note 3: RF performance is tested at 1800MHz. Note 4: Guaranteed by design. Note 5: Operation at higher frequencies is possible with reduced performance. Consult factory for more information. 5536f 2 LTC5536 U W TYPICAL PERFOR A CE CHARACTERISTICS Supply Current vs Supply Voltage RF Input Signal Off, VLEN = 0V 3.5 3.5 3.0 3.0 TA = 85°C 2.5 2.0 TA = 25°C 1.5 TA = –40°C 1.0 0.5 3.0 4.5 3.5 4.0 SUPPLY VOLTAGE (V) 5.0 TA = 25°C 1200 800 TA = 85°C 400 3.0 4.5 3.5 4.0 SUPPLY VOLTAGE (V) 5.0 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 5.5 8 12 VM Comparator Switching Voltage vs RF Input Power 2000MHz VM Comparator Switching Voltage vs RF Input Power 3000MHz TA = 25°C 800 TA = 85°C 2400 TA = –40°C 2000 1600 TA = 25°C 1200 800 TA = 85°C 400 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 8 2800 VCC = 3.6V VLEN = 0V 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 12 VM SWITCHING VOLTAGE (mV) 2800 VCC = 3.6V VLEN = 0V 400 8 2400 VCC = 3.6V VLEN = 0V 2000 TA = –40°C 1600 TA = 25°C 1200 800 TA = 85°C 400 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 12 8 12 5536 G04 5536 G05 5536 G06 VM Comparator Switching Voltage vs RF Input Power 4000MHz VM Comparator Switching Voltage vs RF Input Power 5000MHz VM Comparator Switching Voltage vs RF Input Power 6000MHz 2000 TA = –40°C 1600 TA = 25°C 800 2000 8 12 5536 G07 TA = –40°C 1600 1200 TA = 25°C 800 400 TA = 85°C 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 2400 2800 VCC = 3.6V VLEN = 0V VM SWITCHING VOLTAGE (mV) 2800 VCC = 3.6V VLEN = 0V VM SWITCHING VOLTAGE (mV) VM SWITCHING VOLTAGE (mV) 1.0 1600 VM Comparator Switching Voltage vs RF Input Power 1000MHz 1200 400 TA = –40°C 1.5 TA = –40°C 2000 5536 G03 1600 1200 TA = 25°C 2.0 VCC = 3.6V VLEN = 0V 5536 G02 TA = –40°C 2400 2.5 2400 5536 G01 2000 2800 TA = 85°C 0 2.5 5.5 VM SWITCHING VOLTAGE (mV) VM SWITCHING VOLTAGE (mV) 2400 2800 VM = 0.25V 0.5 0 2.5 2800 VM Comparator Switching Voltage vs RF Input Power 600MHz VM SWITCHING VOLTAGE (mV) 4.0 VM = 0.25V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 4.0 Supply Current vs Supply Voltage RF Input Signal Off, VLEN = VCC 8 VCC = 3.6V VLEN = 0V 2000 1600 TA = –40°C 1200 TA = 25°C 800 400 TA = 85°C 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 2400 TA = 85°C 12 5536 G08 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 8 12 5536 G09 5536f 3 LTC5536 U W TYPICAL PERFOR A CE CHARACTERISTICS 2000 TA = – 40°C 1200 TA = 25°C 800 400 TA = 85°C 0 –28 –24 –20 –16 –12 –8 –4 0 4 RF INPUT POWER (dBm) 8 12 5536 G10 100 TA = 25°C TA = – 40°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) VCC = 3.6V TA = 25°C TA = – 40°C 10 TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 8 12 5536 G13 1000 10 VCC = 3.6V TA = – 40°C TA = 25°C TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 5536 G11 TA = – 40°C TA = – 40°C TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 8 12 5536 G16 1000 8 12 5536 G14 TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 8 12 5536 G12 1000 VCC = 3.6V 100 TA = 25°C TA = – 40°C 10 TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 8 12 5536 G15 Slope of VM Comparator Switching Voltage vs RF Input Power at 7000MHz VCC = 3.6V 100 TA = – 40°C TA = 25°C 10 TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) TA = 25°C 10 Slope of VM Comparator Switching Voltage vs RF Input Power at 4000MHz TA = 25°C 10 VCC = 3.6V 100 Slope of VM Comparator Switching Voltage vs RF Input Power at 6000MHz SLOPE OF VM SWITCHING VOLTAGE (mV/dB) SLOPE OF VM SWITCHING VOLTAGE (mV/dB) 100 12 VCC = 3.6V 100 Slope of VM Comparator Switching Voltage vs RF Input Power at 5000MHz 1000 8 1000 Slope of VM Comparator Switching Voltage vs RF Input Power at 3000MHz SLOPE OF VM SWITCHING VOLTAGE (mV/dB) SLOPE OF VM SWITCHING VOLTAGE (mV/dB) 100 TA = 85°C 10 Slope of VM Comparator Switching Voltage vs RF Input Power at 2000MHz 1000 VCC = 3.6V SLOPE OF VM SWITCHING VOLTAGE (mV/dB) 1600 1000 SLOPE OF VM SWITCHING VOLTAGE (mV/dB) VCC = 3.6V VLEN = 0V SLOPE OF VM SWITCHING VOLTAGE (mV/dB) 2400 SLOPE OF VM SWITCHING VOLTAGE (mV/dB) VM SWITCHING VOLTAGE (mV) 2800 Slope of VM Comparator Switching Voltage vs RF Input Power at 1000MHz Slope of VM Comparator Switching Voltage vs RF Input Power at 600MHz VM Comparator Switching Voltage vs RF Input Power 7000MHz 8 12 5536 G17 1000 VCC = 3.6V 100 TA = – 40°C TA = 25°C 10 TA = 85°C 1 0 4 –20 –16 –12 –8 –4 RF INPUT POWER (dBm) 8 12 5536 G18 5536f 4 LTC5536 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C) FREQUENCY (GHz) RESISTANCE (Ω) REACTANCE (Ω) 0.60 152.91 –116.16 0.79 123.50 –111.98 0.98 102.42 –105.03 1.18 86.70 –96.82 1.37 74.80 –88.72 1.56 65.80 –80.93 1.75 58.82 –73.67 1.94 53.15 –67.22 2.14 48.80 – 60.93 2.33 45.86 – 55.62 2.52 42.88 –51.52 2.71 40.43 –47.41 2.90 38.21 – 43.52 3.10 35.73 – 39.58 3.29 34.09 – 35.73 3.48 32.16 – 32.68 3.67 30.77 – 28.25 3.86 30.30 – 26.77 4.06 27.45 – 22.91 4.25 25.57 –19.02 4.44 24.59 –15.00 4.63 23.92 –11.08 4.82 23.62 –7.35 5.02 23.45 –3.68 5.21 23.24 – 0.09 5.40 23.30 3.53 5.59 23.66 7.08 5.78 24.20 10.37 5.98 25.03 13.36 6.17 25.27 15.93 6.36 25.06 18.97 6.55 25.08 22.50 6.74 25.29 26.13 6.87 25.59 28.64 7.00 25.99 31.20 S11 Forward Reflection Impedance 0.6GHz–7.0GHz 5536 G19 5536f 5 LTC5536 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C) FREQUENCY (GHz) RESISTANCE (Ω) REACTANCE (Ω) 0.60 171.28 –163.91 0.79 132.48 –151.40 0.98 106.05 –136.13 1.18 87.75 –122.84 1.37 74.19 –110.86 1.56 64.17 –100.09 1.75 56.84 – 91.10 1.94 50.77 – 81.95 2.14 46.69 – 74.70 2.33 43.66 –68.01 2.52 40.24 – 62.54 2.71 38.17 – 58.00 2.90 35.92 – 53.32 3.10 33.68 – 48.71 3.29 32.26 – 44.12 3.48 30.54 –40.76 3.67 28.02 –36.26 3.86 29.16 –33.25 4.06 25.08 –30.21 4.25 23.57 –25.89 4.44 22.55 –21.78 4.63 21.87 –17.40 4.82 21.40 – 13.49 5.02 21.14 –9.71 5.21 20.92 –5.99 5.40 21.01 –2.54 5.59 21.33 1.33 5.78 21.82 4.57 5.98 22.46 7.95 6.17 22.63 10.65 6.36 22.34 13.54 6.55 22.31 17.14 6.74 22.53 20.99 6.87 22.80 23.53 7.00 23.17 25.92 S11 Forward Reflection Impedance 0.6GHz–7.0GHz 5536 G20 5536f 6 LTC5536 U U U PI FU CTIO S RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 600MHz to 7GHz. This pin has an internal 500Ω termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. LEN (Pin 4): Latch Enable Input. Output is latched when LEN is high and transparent when LEN is low. VOUT (Pin 5): Comparator Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 5.5V. VCC should be bypassed appropriately with ceramic capacitors. VM (Pin 3): Comparator Negative Input. Apply reference voltage to this pin. W BLOCK DIAGRA RFSOURCE 12pF TO 200pF (DEPENDING ON APPLICATION) VCC 6 + COMP VOUT 3 VM 4 LEN – 500Ω RFIN 5 1 500Ω VP 7.5k 15pF 7.5k 50µA 50µA BIAS + 100mV DC BIAS RF DET – 10k 110k GND 2 5536 BD 5536f 7 LTC5536 U W U U APPLICATIO S I FOR ATIO Operation The LTC5536 is configured as a fast detector and high speed comparator for RF power detection and RF power alarms. The product integrates several functions to provide RF power detection over frequencies ranging from 600MHz to 7GHz. These functions include an RF Schottky diode peak detector, a level shift amplifier to convert the RF input signal to low frequency, and a fast comparator. The LTC5536 provides a comparator reference input VM and a latch enable input LEN. RF Detector The internal RF Schottky diode peak detector and level shift amplifier convert the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55µA, and drives a 15pF internal peak detector capacitor. High Speed Comparator The fast internal comparator compares the external reference voltage at VM to the internal signal voltage from the peak detector, and produces the output signal, VOUT. The internal peak detector voltage is factory trimmed to 100mV with no RF signal present. The comparator has approximately 10mV of hysteresis, with a typical VOUT low-to-high switching point of 100mV and a VOUT high-to-low switching point of 90mV with no RF signal present. The comparator also has a built-in latch. This will cause the VOUT output to latch high on a positive comparator transition (increasing RF power), when the LEN pin is high, as indicated in the waveforms of Figure 1. For transparent EXTERNAL ENABLE LEN OUTPUT RF DET VM VP OUTPUT OF COMPARATOR VOUT VOUT TRANSPARENT VOUT LATCHED VOUT TRANSPARENT operation of the comparator (no latching action), the LEN pin should be connected to ground. The comparator output (VOUT) rise and fall times are approximately 2ns (unloaded). The propagation delay for the comparator alone was characterized by applying a continuous 2GHz RF signal to the RFIN input. Then a 1MHz square wave (0V to 2.5V) was applied to the VM input to switch the comparator. Note that there is a signal inversion, because the VM pin is connected internally to the negative comparator input. The time delay from the transition edge of the square wave at the VM input to the corresponding VOUT output transition (rising or falling) is shown in Table 1. Table 1. Comparator Propagation Delay RF Input Level (dBm) VOUT Rising Edge Delay (ns) VOUT Falling Edge Delay (ns) –10 38.5 36 0 24 40 10 20 86 Overall Propagation Delay and Response Time Figure 2 shows measurements of total propagation delay from the RFIN signal input to the VOUT output of the LTC5536, plotted as a function of RF input power. The response is shown for RF Signal Absent-to-RF Signal Present Transitions (Rising Edge VOUT), and for RF Signal Present-to-RF Signal Absent Transitions (Falling Edge VOUT). The LTC5536’s RF detector is optimized as a positive peak detector. Consequently, the device responds to a rising signal at the RF input much more rapidly than to a falling signal. Correspondingly, Rising Edge VOUT transitions are much more rapid than Falling Edge transitions, as shown in Figure 2. The minimum propagation delay is about 20ns at room temperature, in response to strong overdrive conditions at the RFIN input. These results were measured by applying a 1GHz RF signal that was amplitude modulated by a 1MHz square wave with 50% duty cycle. An example time domain waveform is shown in Figure 3. 5536 AI01 Figure 1. LTC5536 LEN Function Waveform 5536f 8 LTC5536 U W U U APPLICATIO S I FOR ATIO Higher Frequency Operation as a 100pF ceramic, is recommended, in parallel with a larger capacitor (e.g., 0.1µF). Operation of the LTC5536 at higher frequencies, to 12GHz or above, is possible with reduced performance. Figure 4 plots the VM switching voltage vs RFIN input power with a 12GHz RF input. Consult factory for more information. High Speed Design Techniques Avoid ground bounce problems by proper attention to grounding, including the use of a low impedance ground plane. If necessary, edge transition time at the comparator output, VOUT, may be increased by means of an output R-C low pass filter. As with all high speed comparators, careful attention to printed circuit board layout and design is important in order to ensure signal integrity. The most common problem involves insufficient power supply bypassing. Bypass capacitors should be placed as close as possible to the LTC5536 VCC pin. A good high frequency capacitor, such Poor trace routes and high source impedances are also common sources of problems. Keep all trace lengths as short as possible and avoid running the output trace close to the VM or the LEN traces on the PC board. Also, keep the VM source impedance low and decouple the VM pin with an appropriate capacitor if necessary. 150mV 70 60 350 FALLING VCC = 3.6V EDGE TA = 25°C OUTPUT LOAD TO GROUND: SHUNT R = 1kΩ, C = 10pF 300 250 VM = 200mV 50 200 115mV 40 150mV 115mV 30 150 VM = 200mV 20 RISING EDGE 10 0 –18 100 50 OUTPUT FALLING EDGE DELAY (ns) OUTPUT RISING EDGE DELAY (ns) 80 0 –14 –10 –6 –2 2 6 10 RF INPUT POWER (dBm) 5536 F02 Figure 2. Propagation Delay vs RF Input Power RF INPUT = 2dBm 1000MHz, ASK MODULATED RFIN INPUT SIGNAL VOUT OUTPUT SIGNAL 100ns/DIV 5536 F03 2V/DIV VM = 200mV VCC = 3.6V OUTPUT LOAD (TO GROUND): SHUNT R = 1k SHUNT C = 10pF Figure 3. Propagation Delay Example 5536f 9 LTC5536 U W U U APPLICATIO S I FOR ATIO VM SWITCHING VOLTAGE (mV) 1200 1000 VCC = 3.6V VLEN = 0V TA = 25°C 800 600 400 200 0 –20 –16 –12 –8 –4 4 0 RF INPUT POWER (dBm) 8 12 5536 F04 Figure 4. VM Comparator Switching Voltage vs RF Input Power at 12GHz VCC 2.7V TO 5.5V RFIN C4 39pF 1 R1 (OPT) C1 0.1µF LTC5536ES6 2 3 RFIN VCC GND VOUT VM LEN C2 100pF 6 5 4 VOUT LEN VM REFERENCE 5536 F05 Figure 5. Demo Board Schematic 5536f 10 LTC5536 U PACKAGE DESCRIPTIO S6 Package 6-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 – 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 – 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 – 0.90 0.20 BSC 0.01 – 0.10 1.00 MAX DATUM ‘A’ 0.30 – 0.50 REF 0.09 – 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 5536f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LTC5536 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT® 5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50Ω Single Ended RF and LO Ports LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50Ω Single Ended RF and LO Ports LT5521 3.7GHz Very High Linearity Mixer 24.2dBm IIP3 at 1.95GHz, 12.5dB NF, –42dBm LO Leakage LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports LT5525 0.9GHz to 2.5GHz High Linearity, Low Power Downconverting Mixer 17.6dBm IIP3 at 1.9GHz, On-Chip 50Ω RF and LO Matching, ICC = 28mA LT5526 Broadband High Linearity, Low Power Downconverting Mixer 16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, ICC = 28mA LT5528 1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator 21.8dBm OIP3 at 2GHz, –159dBm/Hz, Noise Floor, All Ports 50Ω Matched, Single-Ended RF and LO Ports RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC5505 300MHz to 3GHz RF Power Detectors LTC5505-1: –28dBm to 18dBm Range, LTC5505-2: –32dBm to 12dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector –34dBm to 14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector –32dBm to 12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown and Adjustable Gain LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown and Adjustable Offset LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset LT5534 50MHz to 3GHz RF Power Detector 60dB Dynamic Range, Temperature Compensated, SC70 Package LTC5535 300MHz to 7GHz Precision RF Detector with 12MHz Amplifier Precision VOUT Offset Control, Adjustable Gain and Offset RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4402 Multiband RF Power Controller Multiband GSM/GPRS/EDGE Mobile Phones LTC4402-1: Single Channel Output Control LTC4402-2: Dual Channel Output Control LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW 5536f 12 Linear Technology Corporation LT/TP 1004 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2004