LTC5536
600MHz to 7GHz
Precision RF Detector with
Fast Comparator Output
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FEATURES
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DESCRIPTIO
Temperature Compensated Internal Schottky
Diode RF Detector
Wide Input Frequency Range: 600MHz to 7GHz*
Wide Input Power Range: –26dBm to 12dBm
Fast Comparator Output with Latch Enable
25ns Response Time with 0dBm RF Input Level
Rail-to-Rail Output Swing
Comparator Output Current: ±20mA
Wide VCC Range of 2.7V to 5.5V
Low Operating Current: 2mA
Available in a Low Profile (1mm) SOT-23 Package
The LTC®5536 is an RF power detector for RF applications
operating in the 600MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and fast comparator are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single cell lithium-ion or three cell NiMH battery.
RF Signal Presence Detectors for:
802.11a, 802.11b, 802.11g, 802.15
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
RF ID Tag Reader
The LTC5536 operates with RF input power levels from
–26dBm to 12dBm.
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APPLICATIO S
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The response time from the RF input to VOUT can be as little
as 20ns. The comparator output is latched when LEN is
high or is transparent when LEN is low.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Operation at higher frequencies is possible with reduced performance.
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The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is compared against
a reference voltage at VM.
TYPICAL APPLICATIO
VM Comparator Switching Voltage
vs RF Input Power, 600MHz – 7GHz
3200
600MHz to 7GHz RF Power Detector
RF
INPUT
LTC5536
1
VCC 6
RFIN
VCC
100pF
2
GND
VM 3 V
M
REFERENCE
VOUT
LEN
5
4
DISABLE ENABLE
0.1µF
VM SWITCHING VOLTAGE (mV)
33pF
2800
2400
2000
1600
600MHz
1000MHz
2000MHz
3000MHz
4000MHz
5000MHz
6000MHz
7000MHz
VCC = 3.6V
VLEN = 0V
TA = 25°C
1200
800
400
5536 TA01
0
–28 –24 –20 –16 –12 –8 –4 0 4
INPUT RF POWER (dBm)
8
12
5536 TA01b
5536f
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LTC5536
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
VCC, VOUT, VM, LEN .................................... –0.3V to 6V
RFIN Voltage ...................................(VCC ± 1.5V) to 6.5V
IVOUT .................................................................. ±25mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ORDER PART
NUMBER
TOP VIEW
RFIN 1
6 VCC
GND 2
5 VOUT
VM 3
LTC5536ES6
4 LEN
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LBDS
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, VM = 160mV unless otherwise noted.
PARAMETER
CONDITIONS
MIN
●
VCC Operating Voltage
TYP
2.7
●
2.1
MAX
UNITS
5.5
V
IVCC Operating Current
IVOUT = 0mA, VM = 0.5V
VOUT VOL (No RF Input)
ISINK = 20mA, VM = 0.5V
0.8
V
VOUT VOH (No RF Input)
ISOURCE = 20mA, VM = 0V
VCC – 0.4
V
VOUT Output Current
●
VM Voltage Range
●
VM Input Current
●
–0.5
±15
VM Switch Point (No RF Input)
VOUT Low to High
VOUT High to Low
●
65
LEN Input Current
LEN = 3.6V
●
22
LEN Switch Point
Low to High
High to Low
●
●
1.5
3
mA
±20
100
90
mA
VCC -1. 8
V
0.5
µA
135
mV
mV
42
µA
0.5
V
V
RFIN Input Frequency Range
(Note 5)
RFIN Input Power Range
RF Frequency = 600MHz to 7GHz (Note 3, 4) VCC = 2.7V to 5.5V
RFIN AC Input Resistance
F = 1000MHz, Pin = –25dBm
220
Ω
RFIN Input Shunt Capacitance
F = 1000MHz, Pin = –25dBm
0.65
pF
Response Time
∆VRF = 1VP-P, fRF = 1000MHz, VM = 0.15V,
VOUT Low to High Transition
20
ns
tr VOUT Rise Time
0.5V to 3V
2
ns
tf VOUT Fall Time
3V to 0.5V
2
ns
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
600 to 7000
MHz
–26 to 12
dBm
Note 3: RF performance is tested at 1800MHz.
Note 4: Guaranteed by design.
Note 5: Operation at higher frequencies is possible with reduced
performance. Consult factory for more information.
5536f
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LTC5536
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TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Supply Voltage
RF Input Signal Off, VLEN = 0V
3.5
3.5
3.0
3.0
TA = 85°C
2.5
2.0
TA = 25°C
1.5
TA = –40°C
1.0
0.5
3.0
4.5
3.5
4.0
SUPPLY VOLTAGE (V)
5.0
TA = 25°C
1200
800
TA = 85°C
400
3.0
4.5
3.5
4.0
SUPPLY VOLTAGE (V)
5.0
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
5.5
8
12
VM Comparator Switching Voltage
vs RF Input Power 2000MHz
VM Comparator Switching Voltage
vs RF Input Power 3000MHz
TA = 25°C
800
TA = 85°C
2400
TA = –40°C
2000
1600
TA = 25°C
1200
800
TA = 85°C
400
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8
2800
VCC = 3.6V
VLEN = 0V
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
12
VM SWITCHING VOLTAGE (mV)
2800
VCC = 3.6V
VLEN = 0V
400
8
2400
VCC = 3.6V
VLEN = 0V
2000
TA = –40°C
1600
TA = 25°C
1200
800
TA = 85°C
400
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
12
8
12
5536 G04
5536 G05
5536 G06
VM Comparator Switching Voltage
vs RF Input Power 4000MHz
VM Comparator Switching Voltage
vs RF Input Power 5000MHz
VM Comparator Switching Voltage
vs RF Input Power 6000MHz
2000
TA = –40°C
1600
TA = 25°C
800
2000
8
12
5536 G07
TA = –40°C
1600
1200
TA = 25°C
800
400
TA = 85°C
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
2400
2800
VCC = 3.6V
VLEN = 0V
VM SWITCHING VOLTAGE (mV)
2800
VCC = 3.6V
VLEN = 0V
VM SWITCHING VOLTAGE (mV)
VM SWITCHING VOLTAGE (mV)
1.0
1600
VM Comparator Switching Voltage
vs RF Input Power 1000MHz
1200
400
TA = –40°C
1.5
TA = –40°C
2000
5536 G03
1600
1200
TA = 25°C
2.0
VCC = 3.6V
VLEN = 0V
5536 G02
TA = –40°C
2400
2.5
2400
5536 G01
2000
2800
TA = 85°C
0
2.5
5.5
VM SWITCHING VOLTAGE (mV)
VM SWITCHING VOLTAGE (mV)
2400
2800
VM = 0.25V
0.5
0
2.5
2800
VM Comparator Switching Voltage
vs RF Input Power 600MHz
VM SWITCHING VOLTAGE (mV)
4.0
VM = 0.25V
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
4.0
Supply Current vs Supply Voltage
RF Input Signal Off, VLEN = VCC
8
VCC = 3.6V
VLEN = 0V
2000
1600
TA = –40°C
1200
TA = 25°C
800
400
TA = 85°C
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
2400
TA = 85°C
12
5536 G08
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8
12
5536 G09
5536f
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LTC5536
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TYPICAL PERFOR A CE CHARACTERISTICS
2000
TA = – 40°C
1200
TA = 25°C
800
400
TA = 85°C
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8
12
5536 G10
100
TA = 25°C
TA = – 40°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
VCC = 3.6V
TA = 25°C
TA = – 40°C
10
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
8
12
5536 G13
1000
10
VCC = 3.6V
TA = – 40°C
TA = 25°C
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
5536 G11
TA = – 40°C
TA = – 40°C
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
8
12
5536 G16
1000
8
12
5536 G14
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
8
12
5536 G12
1000
VCC = 3.6V
100
TA = 25°C
TA = – 40°C
10
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
8
12
5536 G15
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 7000MHz
VCC = 3.6V
100
TA = – 40°C
TA = 25°C
10
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
TA = 25°C
10
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 4000MHz
TA = 25°C
10
VCC = 3.6V
100
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 6000MHz
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
100
12
VCC = 3.6V
100
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 5000MHz
1000
8
1000
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 3000MHz
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
100
TA = 85°C
10
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 2000MHz
1000
VCC = 3.6V
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
1600
1000
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
VCC = 3.6V
VLEN = 0V
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
2400
SLOPE OF VM SWITCHING VOLTAGE (mV/dB)
VM SWITCHING VOLTAGE (mV)
2800
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 1000MHz
Slope of VM Comparator
Switching Voltage vs
RF Input Power at 600MHz
VM Comparator Switching Voltage
vs RF Input Power 7000MHz
8
12
5536 G17
1000
VCC = 3.6V
100
TA = – 40°C
TA = 25°C
10
TA = 85°C
1
0
4
–20 –16 –12 –8 –4
RF INPUT POWER (dBm)
8
12
5536 G18
5536f
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LTC5536
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.60
152.91
–116.16
0.79
123.50
–111.98
0.98
102.42
–105.03
1.18
86.70
–96.82
1.37
74.80
–88.72
1.56
65.80
–80.93
1.75
58.82
–73.67
1.94
53.15
–67.22
2.14
48.80
– 60.93
2.33
45.86
– 55.62
2.52
42.88
–51.52
2.71
40.43
–47.41
2.90
38.21
– 43.52
3.10
35.73
– 39.58
3.29
34.09
– 35.73
3.48
32.16
– 32.68
3.67
30.77
– 28.25
3.86
30.30
– 26.77
4.06
27.45
– 22.91
4.25
25.57
–19.02
4.44
24.59
–15.00
4.63
23.92
–11.08
4.82
23.62
–7.35
5.02
23.45
–3.68
5.21
23.24
– 0.09
5.40
23.30
3.53
5.59
23.66
7.08
5.78
24.20
10.37
5.98
25.03
13.36
6.17
25.27
15.93
6.36
25.06
18.97
6.55
25.08
22.50
6.74
25.29
26.13
6.87
25.59
28.64
7.00
25.99
31.20
S11 Forward Reflection
Impedance
0.6GHz–7.0GHz
5536 G19
5536f
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LTC5536
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.60
171.28
–163.91
0.79
132.48
–151.40
0.98
106.05
–136.13
1.18
87.75
–122.84
1.37
74.19
–110.86
1.56
64.17
–100.09
1.75
56.84
– 91.10
1.94
50.77
– 81.95
2.14
46.69
– 74.70
2.33
43.66
–68.01
2.52
40.24
– 62.54
2.71
38.17
– 58.00
2.90
35.92
– 53.32
3.10
33.68
– 48.71
3.29
32.26
– 44.12
3.48
30.54
–40.76
3.67
28.02
–36.26
3.86
29.16
–33.25
4.06
25.08
–30.21
4.25
23.57
–25.89
4.44
22.55
–21.78
4.63
21.87
–17.40
4.82
21.40
– 13.49
5.02
21.14
–9.71
5.21
20.92
–5.99
5.40
21.01
–2.54
5.59
21.33
1.33
5.78
21.82
4.57
5.98
22.46
7.95
6.17
22.63
10.65
6.36
22.34
13.54
6.55
22.31
17.14
6.74
22.53
20.99
6.87
22.80
23.53
7.00
23.17
25.92
S11 Forward Reflection
Impedance
0.6GHz–7.0GHz
5536 G20
5536f
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LTC5536
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PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 600MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
GND (Pin 2): Ground.
LEN (Pin 4): Latch Enable Input. Output is latched when
LEN is high and transparent when LEN is low.
VOUT (Pin 5): Comparator Output.
VCC (Pin 6): Power Supply Voltage, 2.7V to 5.5V.
VCC should be bypassed appropriately with ceramic
capacitors.
VM (Pin 3): Comparator Negative Input. Apply reference
voltage to this pin.
W
BLOCK DIAGRA
RFSOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
VCC
6
+
COMP
VOUT
3
VM
4
LEN
–
500Ω
RFIN
5
1
500Ω
VP
7.5k
15pF
7.5k
50µA
50µA
BIAS
+
100mV
DC BIAS
RF DET
–
10k
110k
GND 2
5536 BD
5536f
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LTC5536
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APPLICATIO S I FOR ATIO
Operation
The LTC5536 is configured as a fast detector and high
speed comparator for RF power detection and RF power
alarms. The product integrates several functions to provide RF power detection over frequencies ranging from
600MHz to 7GHz. These functions include an RF Schottky
diode peak detector, a level shift amplifier to convert the RF
input signal to low frequency, and a fast comparator. The
LTC5536 provides a comparator reference input VM and a
latch enable input LEN.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier convert the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The
Schottky diode is biased at about 55µA, and drives a 15pF
internal peak detector capacitor.
High Speed Comparator
The fast internal comparator compares the external reference voltage at VM to the internal signal voltage from the
peak detector, and produces the output signal, VOUT. The
internal peak detector voltage is factory trimmed to 100mV
with no RF signal present. The comparator has approximately 10mV of hysteresis, with a typical VOUT low-to-high
switching point of 100mV and a VOUT high-to-low switching point of 90mV with no RF signal present.
The comparator also has a built-in latch. This will cause the
VOUT output to latch high on a positive comparator transition (increasing RF power), when the LEN pin is high, as
indicated in the waveforms of Figure 1. For transparent
EXTERNAL
ENABLE
LEN
OUTPUT
RF DET
VM
VP
OUTPUT OF
COMPARATOR
VOUT
VOUT
TRANSPARENT
VOUT
LATCHED
VOUT
TRANSPARENT
operation of the comparator (no latching action), the LEN
pin should be connected to ground.
The comparator output (VOUT) rise and fall times are
approximately 2ns (unloaded). The propagation delay for
the comparator alone was characterized by applying a
continuous 2GHz RF signal to the RFIN input. Then a 1MHz
square wave (0V to 2.5V) was applied to the VM input to
switch the comparator. Note that there is a signal inversion, because the VM pin is connected internally to the
negative comparator input. The time delay from the transition edge of the square wave at the VM input to the
corresponding VOUT output transition (rising or falling) is
shown in Table 1.
Table 1. Comparator Propagation Delay
RF Input
Level
(dBm)
VOUT Rising
Edge Delay
(ns)
VOUT Falling
Edge Delay
(ns)
–10
38.5
36
0
24
40
10
20
86
Overall Propagation Delay and Response Time
Figure 2 shows measurements of total propagation delay
from the RFIN signal input to the VOUT output of the
LTC5536, plotted as a function of RF input power. The
response is shown for RF Signal Absent-to-RF Signal
Present Transitions (Rising Edge VOUT), and for RF Signal
Present-to-RF Signal Absent Transitions (Falling Edge
VOUT). The LTC5536’s RF detector is optimized as a
positive peak detector. Consequently, the device responds
to a rising signal at the RF input much more rapidly than
to a falling signal. Correspondingly, Rising Edge VOUT
transitions are much more rapid than Falling Edge transitions, as shown in Figure 2. The minimum propagation
delay is about 20ns at room temperature, in response to
strong overdrive conditions at the RFIN input. These
results were measured by applying a 1GHz RF signal that
was amplitude modulated by a 1MHz square wave with
50% duty cycle. An example time domain waveform is
shown in Figure 3.
5536 AI01
Figure 1. LTC5536 LEN Function Waveform
5536f
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LTC5536
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APPLICATIO S I FOR ATIO
Higher Frequency Operation
as a 100pF ceramic, is recommended, in parallel with a
larger capacitor (e.g., 0.1µF).
Operation of the LTC5536 at higher frequencies, to 12GHz
or above, is possible with reduced performance. Figure 4
plots the VM switching voltage vs RFIN input power with a
12GHz RF input. Consult factory for more information.
High Speed Design Techniques
Avoid ground bounce problems by proper attention to
grounding, including the use of a low impedance ground
plane. If necessary, edge transition time at the comparator
output, VOUT, may be increased by means of an output
R-C low pass filter.
As with all high speed comparators, careful attention to
printed circuit board layout and design is important in
order to ensure signal integrity. The most common problem involves insufficient power supply bypassing. Bypass
capacitors should be placed as close as possible to the
LTC5536 VCC pin. A good high frequency capacitor, such
Poor trace routes and high source impedances are also
common sources of problems. Keep all trace lengths as
short as possible and avoid running the output trace close
to the VM or the LEN traces on the PC board. Also, keep the
VM source impedance low and decouple the VM pin with an
appropriate capacitor if necessary.
150mV
70
60
350
FALLING
VCC = 3.6V
EDGE
TA = 25°C
OUTPUT LOAD TO GROUND:
SHUNT R = 1kΩ, C = 10pF
300
250
VM = 200mV
50
200
115mV
40
150mV
115mV
30
150
VM = 200mV
20
RISING
EDGE
10
0
–18
100
50
OUTPUT FALLING EDGE DELAY (ns)
OUTPUT RISING EDGE DELAY (ns)
80
0
–14
–10
–6
–2
2
6
10
RF INPUT POWER (dBm)
5536 F02
Figure 2. Propagation Delay vs RF Input Power
RF INPUT = 2dBm
1000MHz,
ASK MODULATED
RFIN
INPUT
SIGNAL
VOUT
OUTPUT
SIGNAL
100ns/DIV
5536 F03
2V/DIV
VM = 200mV
VCC = 3.6V
OUTPUT LOAD
(TO GROUND):
SHUNT R = 1k
SHUNT C = 10pF
Figure 3. Propagation Delay Example
5536f
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LTC5536
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APPLICATIO S I FOR ATIO
VM SWITCHING VOLTAGE (mV)
1200
1000
VCC = 3.6V
VLEN = 0V
TA = 25°C
800
600
400
200
0
–20 –16 –12 –8 –4
4
0
RF INPUT POWER (dBm)
8
12
5536 F04
Figure 4. VM Comparator Switching
Voltage vs RF Input Power at 12GHz
VCC
2.7V TO 5.5V
RFIN
C4
39pF
1
R1
(OPT)
C1
0.1µF
LTC5536ES6
2
3
RFIN
VCC
GND VOUT
VM
LEN
C2
100pF
6
5
4
VOUT
LEN
VM
REFERENCE
5536 F05
Figure 5. Demo Board Schematic
5536f
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LTC5536
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PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
2.90 BSC
(NOTE 4)
0.95
REF
1.22 REF
3.85 MAX 2.62 REF
1.4 MIN
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
1.90 BSC
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5536f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LTC5536
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
Infrastructure
LT® 5511
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517
40MHz to 900MHz Direct Conversion Quadrature Demodulator
21dBm IIP3, Integrated LO Quadrature Generator
LT5519
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5521
3.7GHz Very High Linearity Mixer
24.2dBm IIP3 at 1.95GHz, 12.5dB NF, –42dBm LO Leakage
LT5522
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
LT5525
0.9GHz to 2.5GHz High Linearity, Low Power
Downconverting Mixer
17.6dBm IIP3 at 1.9GHz, On-Chip 50Ω RF and LO Matching,
ICC = 28mA
LT5526
Broadband High Linearity, Low Power Downconverting Mixer
16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, ICC = 28mA
LT5528
1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159dBm/Hz, Noise Floor, All Ports 50Ω
Matched, Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5530
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Shutdown and Adjustable Gain
LTC5531
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Shutdown and Adjustable Offset
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534
50MHz to 3GHz RF Power Detector
60dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5535
300MHz to 7GHz Precision RF Detector with 12MHz Amplifier
Precision VOUT Offset Control, Adjustable Gain and Offset
RF Power Controllers
LTC1757A
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1758
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC1957
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4402
Multiband RF Power Controller
Multiband GSM/GPRS/EDGE Mobile Phones
LTC4402-1: Single Channel Output Control
LTC4402-2: Dual Channel Output Control
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5536f
12
Linear Technology Corporation
LT/TP 1004 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2004
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