EVALUATION KIT AVAILABLE
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
General Description
Benefits and Features
The MAX15093/MAX15093A ICs are integrated
solutions for hot-swap applications requiring the safe
insertion and removal of circuit-line cards from a live
backplane. The devices integrate a hot-swap controller,
3.8mΩ power MOSFET, and an electronic circuit-breaker
protection in a single package.
The devices integrate an accurate current-sense
circuitry and provide 160µA/A of proportional output
current. The devices are designed for protection of 2.7V
to 18V supply voltages.
These devices implement a foldback current limit during
startup to control inrush current lowering di/dt and keep
the MOSFET operating under safe operating area (SOA)
conditions. After the startup cycle is complete, on-chip
comparators provide VariableSpeed/BiLevel™ protection
against short-circuit and overcurrent faults, and immunity
against system noise and load transients. The load is
disconnected in the event of a fault condition. The devices
are factory calibrated to deliver accurate overcurrent
protection with ±10% accuracy. During a fault condition,
the MAX15093 latches off, while the MAX15093A enters
autoretry mode.
The devices feature an IN-to-OUT short-circuit detection
before startup. The devices provide a power-MOSFET
GATE pin to program the slew rate during startup by adding
an external capacitor. The devices have overvoltage/
undervoltage input pins that can detect an overvoltage/
undervoltage fault and disconnect the IN from the OUT.
Additional features include internal overtemperature
protection, power-good output, and fault-indicator output.
The MAX15093/MAX15093A ICs are available in a
40-bump, 2.57mm x 4.03mm, power wafer-level package
(WLP) and are rated over the -40°C to +105°C extended
temperature range.
Applications
●
●
●
●
●
RAID Systems
Storage Bridge Bay
Disk Drive Power
Server I/O Cards
Industrial
VariableSpeed/BiLevel is a trademark of Maxim Integrated
Products, Inc.
19-8688; Rev 4; 3/21
● Integration Reduces Solution Size for Blade Servers
and Other Space-Constrained Designs
• Integrated 3.8mΩ (typ) Internal Power MOSFET
Overvoltage Protection
• Power-Good and Fault Outputs
• Programmable Undervoltage Lockout
• Current Reporting Without Need for External
RSENSE
• Thermal Protection
● Flexibility Enables Use in Many Unique Designs
• 2.7V to 18V Operating Voltage Range
• Adjustable Circuit-Breaker Current/Current-Limit
Threshold
• Programmable Slew-Rate Control
• Variable-Speed Circuit-Breaker Response
• Latchoff (MAX15093) or Automatic Retry
(MAX15093A) Options
● Safety Features Ensure Accurate, Robust Protection
• 15A Continuous Load Current Capability
• ±10% Circuit-Breaker Threshold Accuracy
• Inrush Current Regulated at Startup with Foldback
• Implementation for di/dt Control
• IN-to-OUT Short-Circuit Detection
Ordering Information and Recommended Application
Circuit for Hot-Swap Applications appear at end of
data sheet.
Typical Application Circuit
12V
IN
10Ω
OUT
TVS
5600pF
VCC
17.8kΩ
6 x 10µF
GATE
1µF
12V
MAX15093
UV MAX15093A
523kΩ
REG
40.2kΩ
100kΩ
PG
CB
FAULT
ISENSE
1µF
536Ω
OV
CDLY
TIMEOUT
1.78kΩ
GND
A/D
CONVERTER
100kΩ
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Absolute Maximum Ratings
VCC to GND...........................................................-0.3V to +20V
IN to GND...............................................................-0.3V to +20V
OUT to GND................................................-0.3V to (VIN + 0.3V)
GATE to OUT...........................................................-0.3V to +6V
CDLY, ISENSE to GND...........................-0.3V to (VREG + 0.3V)
TIMEOUT, CB, UV, OV to GND...............................-0.3V to +6V
REG to GND.............................-0.3V to min (+6V, (VCC + 0.3V))
PG, FAULT to GND................................................-0.3V to +20V
Continuous Power Dissipation (TA = +70°C)
WLP (derate 27.16mW/NC above +70°C)..................2173mW
Operating Temperature Range.......................... -40°C to +105°C
Junction Temperature.......................................................+150°C
Storage Temperature Range............................. -60°C to +150°C
Lead Temperature (soldering, 10s).................................. +300°C
Soldering Temperature (reflow)........................................ +260°C
VOUT Recirculation Current (DC) (Note 1).......................600mA
VOUT Recirculation Current (200µs) (Note 1).......................1.8A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Note 1: A VOUT recirculation current is the current measured into GND in the case there is negative output voltage. A current greater
than this value can damage the part.
Package Information
PACKAGE TYPE: 40 WLP
Package Code
W402B4Z+1
Outline Number
21-100079
Land Pattern Number
Refer to Application note 1891
THERMAL RESISTANCE, FOUR-LAYER BOARD
Junction to Ambient (θJA)
36.82°C/W
For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board.
For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +105°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 40.2kΩ,
and TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
18
V
POWER SUPPLIES
VCC Operating Range
VCC
IN Operating Range
VIN
VCC Supply Current
ICC
IN Supply Current
IIN
VCC Default Undervoltage
Lockout
VUVLO
VCC Default UndervoltageLockout Hysteresis
VUVLO_HYS
REG Regulator Voltage
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VREG
2.7
2.7
18
V
0.8
mA
Power-on Mode
0.51
RCB = 40.2kΩ, no load
5.4
7
2
2.8
2.5
2.65
RCB = 10kΩ, no load
VCC rising
2.35
0.145
No load, VCC ≥ 4V
3.15
3.36
mA
V
V
3.55
V
Maxim Integrated │ 2
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Electrical Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +105°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 40.2kΩ,
and TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
UV Turn-On Threshold
VUV_TH
VUV rising
UV Turn-On Threshold
Hysteresis
VUV_HYS
VUV falling
OV Turn-On Threshold
VOV_TH
VOV rising
OV Turn-On Threshold
Hysteresis
VOV_HYS
VOV falling
TIMEOUT Threshold
TIMEOUT Threshold Hysteresis
OV, UV, TIMEOUT Input
Leakage Current
CB Source Current
VTIMEOUT_TH
VTIMEOUT rising
VTIMEOUT_HYS
VTIMEOUT falling
ILEAK
ITHCB_NORM
VOV = VUV = VTIMEOUT = 0 to 5V
MIN
TYP
MAX
UNITS
1.20
1.221
1.25
V
0.07
1.20
V
1.221
1.25
0.07
0.95
V
1
1.05
0.04
V
V
-1
Power-on mode
VCC = VIN = 12V
V
+1
12
µA
µA
CURRENT LIMIT
Circuit-Breaker Accuracy
(Note 3)
ICB,TH
Circuit-Breaker Accuracy
Deviation
Slow-Comparator Response
Time (Note 4)
Maximum Current Limit During
Startup
Fast-Comparator Threshold
tSCD
ILIM_MAX
VCC = VIN = 12V
RCB = 40.2kΩ (16.5A)
-10
+10
%
RCB = 40.2kΩ, compared to nominal
current-limit value,
VIN = 2.7V to 18V
-13
+13
%
0.6% overcurrent
1.5
ms
30% overcurrent
200
µs
0.5 x ICB,TH
A
1.5 x ICB,TH
A
(see Figure 2)
IFC_TH
Minimum CB Voltage Reference
During Foldback (Note 5)
VTHCB_MIN
VIN - VOUT > 10V, RCB = 40.2kΩ
60
mV
Maximum CB Voltage Reference
During Foldback (Note 5)
VTHCB_MAX
VIN - VOUT < 2V, RCB = 40.2kΩ
240
mV
TIMING
Startup Maximum Time Duration
tSU
VIN = 12V, CGATE = 8.2nF
46
53
60
ms
Autorestart Delay Time
tRESTART
Time Delay Comparator High
Threshold
VDLY_TH
1.76
1.98
2.2
V
IDLY
1.6
1.9
2.3
µA
tSHORT
10.8
13.7
15.2
ms
Time Delay Pullup Current
Output Short Detection Time at
Startup
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3.2
s
Maxim Integrated │ 3
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Electrical Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +105°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 40.2kΩ,
and TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
3.8
5.6
UNITS
MOSFET
Total On-Resistance
GATE Charge Current
RON
IGATE
TA = +25°C
IOUT = 1A, 2oz PCB
mΩ
TA = -40°C to +105°C
IOUT = 1A, 2oz PCB
VGATE = VIN
7.4
4.5
5.7
7.2
µA
0.4
V
1
µA
OUTPUTS
FAULT, PG Output Low Voltage
VOL
Low-impedance state,
IFAULT = +5mA, IPG = +5mA
FAULT, PG Output High
Leakage Current
IOH
High-impedance state,
VFAULT = 16V, VPG = 16V
CURRENT REPORT
ISENSE Full-Scale Current
IISENSE
ISENSE Gain Ratio
ISENSE Voltage Range
ISENSE/IOUT
VISENSE
ISENSE Offset Error
IISENSE_OFF
ISENSE Gain Error
IISENSE_ERROR
VCC = VIN = 12V
2.5
mA
157
µA/A
0
2.5
VCC = VIN = 12V, TA = +25°C
+50
+95
+140
VCC = VIN = 12V, TA = -40°C to
+105°C
+25
+95
+165
VCC = VIN = 12V, TA = +25°C
-8
+8
VCC = VIN = 12V, TA = -40°C to
+105°C
-9
+9
V
µA
%
PG THRESHOLD
PG Threshold
VPG
Measured at VOUT
PG Assertion Delay
tPG
From VOUT > VPG and
(VGATE - VIN) > 3V
OUT to IN Short-Circuit
Detection Threshold
OUT Precharge Threshold
0.9 x VIN
12
16
V
20
ms
VIOSHT
Measured at VOUT
0.9 x VIN
V
VPC
Measured at VOUT
0.5 x VIN
V
TSD
TJ rising
+150
°C
TJ falling
20
°C
THERMAL SHUTDOWN
Thermal Shutdown
Thermal-Shutdown Hysteresis
Note 2: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design.
Note 3: 40.2kΩ is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. In production, devices are not tested at RCB = 40.2kΩ; the parameter specified at RCB = 40.2kΩ is guaranteed by bench characterization and correlation. The formula that describes the relationship between RCB and the circuit-breaker current threshold is:
ICB = RCB/2300Ω/A -1A.
Note 4: The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 5: Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
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Maxim Integrated │ 4
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Typical Operating Characteristics
(VIN = VCC = 2.7V to 18V, TJ = -40°C to +105°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 40.2kΩ, and
TJ = +25°C.) (Note 3)
CIRCUIT-BREAKER THRESHOLD
vs. CIRCUIT-BREAKER RESISTANCE
IN SUPPLY CURRENT vs. TEMPERATURE
toc01
5.8
IN SUPPLY CURRENT (mA)
CIRCUIT-BREAKER THRESHOLD (A)
VIN = 12V
RCB = 40.2kΩ
5.75
5.7
5.65
5.6
5.55
5.5
-40
-10
20
50
80
toc02
18
VIN = 12V
16
14
12
10
8
6
4
2
0
110
10
20
TEMPERATURE (°C)
CIRCUIT-BREAKER THRESHOLD
vs. TEMPERATURE
toc03
VIN = 12V
16
12
10
RCB = 30kΩ
8
6
RCB = 20kΩ
4
2
0
toc04
VIN = 12V
ILOAD = 1A
RCB = 40.2kΩ
14
RCB = 10kΩ
-40
-10
20
50
80
4
3
2
110
-40
TEMPERATURE (°C)
TURN-ON WAVEFORM
CGATE = 8.2nF
0V
RCB = 40.2kΩ
ILOAD = 0A
10ms/div
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VPG
10V/div
ILOAD
2A/div
0A
20
50
80
NORMAL TURN-OFF WAVEFORM
toc05
VOUT
10V/div
0V
-10
110
TEMPERATURE (°C)
VUV
2V/div
0V
40
ON-RESISTANCE vs. TEMPERATURE
5
ON-RESISTANCE (mΩ)
CIRCUIT-BREAKER THRESHOLD (A)
18
30
RCB (kΩ)
toc06
VUV
2V/div
0V
VOUT
10V/div
0V
VPG
10V/div
0V
ILOAD = 0A
0A
ILOAD
2A/div
10ms/div
Maxim Integrated │ 5
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Typical Operating Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TJ = -40°C to +105°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 40.2kΩ, and
TJ = +25°C.) (Note 3)
FAULT-SHUTDOWN
WAVEFORM OVERLOAD (SHORT CIRCUIT)
FAULT-SHUTDOWN
WAVEFORM OVERLOAD (SLOW TRIP)
toc08
toc07
VOUT
10V/div
0V
IOUT
ILOAD
10A/div
VPG
10V/div
0V
VPG
10V/div
0V
VFAULT
5V/div
VFAULT
5V/div
0A
0A
1ms/div
10µs/div
UV RISING/FALLING THRESHOLD
VOLTAGE vs. TEMPERATURE
1.3
UV RISING/FALLING THRESHOLD (V)
1.28
IIN, IOUT
10A/div
IIN
0V
0V
VOUT
10V/div
TYPICAL APPLICATION CIRCUIT
0V
VIN = 12V
PG ASSERTION DELAY
toc09
VUV RISING
1.26
toc10
VUV
1V/div
0V
1.24
1.22
1.2
VUV FALLING
1.18
VOUT
5V/div
0V
1.16
VPG
5V/div
1.14
1.12
1.1
0V
-40
-10
20
50
80
10ms/div
110
TEMPERATURE (°C)
CIRCUIT-BREAKER REACTION TIME
vs. OVERCURRENT LEVEL
toc11
VOUT
10V/div
0V
ILOAD1 = 10A
ILOAD2 = 1.5A
0V
ILOAD
10A/div
0V
VPG
10V/div
0A
VFAULT
10V/div
1s/div
CIRCUIT-BREAKER REACTION TIME (ms)
AUTORETRY FUNCTIONALITY
toc12
10
TYPICAL APPLICATION CIRCUIT
1
VIN = 12V
0.1
0.01
VIN = 3.3V
0
20
40
60
80
100
OVERCURRENT LEVEL ABOVE ICB_TH (%)
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Maxim Integrated │ 6
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Bump Configuration
TOP VIEW
(BUMP SIDE DOWN)
MAX15093
MAX15093A
1
2
3
4
5
6
7
8
ISENSE
VCC
IN
OUT
IN
OUT
IN
GATE
CB
GND
IN
OUT
IN
OUT
IN
TIMEOUT
GND
GND
IN
OUT
IN
OUT
IN
FAULT
REG
GND
IN
OUT
IN
OUT
IN
PG
UV
OV
IN
OUT
IN
OUT
IN
CDLY
+
A
B
C
D
E
WLP
(2.57mm x 4.03mm)
Bump Description
BUMP
NAME
A1
ISENSE
A2
VCC
A3, A5, A7, B3,
B5, B7, C3, C5,
C7, D3, D5, D7,
E3, E5, E7
IN
A4, A6, B4, B6,
C4, C6, D4, D6,
E4, E6
OUT
Load Output. Source of the internal power MOSFET.
A8
GATE
GATE of Internal MOSFET. During startup, a 5.7µA current is sourced to enhance the internal
MOSFET with a 28V/ms slew rate. Connect an external capacitance from GATE to GND to reduce
the output slew rate during startup.
B1
CB
B2, C1, C2, D2
GND
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FUNCTION
Current-Sense Output. The ISENSE output sources a current that is proportional to the output
current. Connect a resistor between ISENSE and GND to produce a scaled voltage. Do not leave
ISENSE unconnected.
Power-Supply Input. Connect VCC to a voltage between 2.7V and 18V. Connect a Schottky diode (or
10Ω resistor) from IN to VCC and a 1µF bypass capacitor to GND to guarantee full operation in the
event VIN collapses during a strong short from OUT to GND.
Supply Voltage Input. IN is connected to the drain of the internal 3.8mΩ MOSFET. Bypass IN with a
transient voltage-suppressor diode to GND for clamping inductive kick transients in the case of fast
output short-circuit to GND.
Current-Limit Threshold Set. Connect a resistor from CB to GND to set the circuit-breaker threshold.
Maximum value of 40.2kΩ can be accepted for safe operation. Having the CB pin connected to GND sets
the circuit-breaker threshold at 0A.
Ground
Maxim Integrated │ 7
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Bump Description (continued)
BUMP
NAME
FUNCTION
B8
TIMEOUT
Timeout Input. To use this feature, externally pull this pin up to logic-high state through a 100kΩ
resistor normally connected to REG. The TIMEOUT input must be pulled down (for at least 1ms) by
the external circuit before a programmable timeout delay has elapsed; otherwise, a shutdown occurs.
The timeout timer starts counting when the internal MOSFET is turned on. Connect a capacitor
between CDLY and GND to program the duration of the timeout delay. Connect TIMEOUT to GND to
disable this feature.
C8
FAULT
Fault Status Output. FAULT is an open-drain, active-low output. See the Fault-Status Output (FAULT)
section for conditions that make FAULT assert low. FAULT is disabled during startup.
D1
REG
Internal Regulator Output. Bypass to ground with a 1µF capacitor. Do not power external circuitry
using the REG output (except a resistor > 50kΩ connected from REG to TIMEOUT). Optional: For
VCC values lower than VREG_MAX, REG can be connected to VCC to maximize the voltage on the
REG pin (see the Electrical Characteristics table).
D8
PG
Power-Good Output. PG is an open-drain, active-high output. PG pulls low until the internal power
MOSFET is fully enhanced.
E1
UV
Active-High Enable Comparator Input. Pulling UV high enables the internal MOSFET to turn on. UV
also sets the undervoltage threshold. See the Setting the Undervoltage Threshold section.
E2
OV
Overvoltage Enable Input. Pull OV high to turn off the internal MOSFET. Connect OV to an external
resistive divider to set the overvoltage-disable threshold. See the Setting the Overvoltage Threshold
section.
CDLY
Timeout Delay Input. Connect a capacitor between CDLY and GND to set a 1s/µF duration timeout
delay. The TIMEOUT input has to be pulled low before the timeout delay elapses, to prevent internal
MOSFET shutdown after power-up. Minimum required capacitor for CDLY is 2000pF; short to GND if
not needed.
E8
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Maxim Integrated │ 8
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Functional Diagram
ILOAD
IN
OUT
MPOW
VCC
MS1
CHARGE
PUMP
ILOAD /4545
IREF
ISENSE
FAULT
MAX15093
MAX15093A
IGATE
GATE
CB_SLOW_COMP
IPD
UV
CONTROL
LOGIC
1.23V
OV
TEMP
SENSE
VCC
LDO
REGULATOR
FAST_COMP
STARTUP
CONTROL AND
FOLDBACK
REFERENCE 1.23V
GENERATOR
GATE
GATE_OK
PG
0.9 x VIN
12µA
1.9µA
CB
CDLY
2V
DLY
CTRL
TIMEOUT
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REG
GND
Maxim Integrated │ 9
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Detailed Description
Enable Logic and Undervoltage/OvervoltageLockout Threshold
The MAX15093/MAX15093A ICs enable the output, as
shown in Table 1. The devices are ready to drive the output when the VCC supply rises above the VUVLO threshold. The devices turn on the output when VCC > VUVLO,
VUV is high (VUV > 1.23V) and VOV is low (VOV < 1.23V).
The devices turn off the output when VUV falls below
(1.23V - VUV_HYS) or VOV rises above 1.23V. An external
resistive divider from IN to UV, OV, and ground provide
the flexibility to set the undervoltage/overvoltage-lockout
threshold to any desired level between VUVLO and 18V.
See Figure 1 and the Setting the Undervoltage Threshold
and Setting the Overvoltage Threshold sections.
Startup
Once the device output is enabled, the device provides
controlled application of power to the load. The voltage at
OUT begins to rise at approximately 28V/ms default until
the programmed circuit-breaker current level is reached,
while the devices actively limit the inrush current at the
circuit-breaker setting. An external capacitor connected to
the GATE pin allows the user to program the slew rate to
a value lower than the default. The inrush current can be
programmed by selecting the appropriate value of RCB.
During startup, a foldback current limit is active to protect
the internal MOSFET to operate within the SOA (Figure 2).
An internal 48ms timer (tSU) starts counting when the
devices enter the startup phase. The devices complete
the startup phase and enter normal operation mode if the
voltage at OUT rises above the precharge threshold (0.9 x
VIN) and (VGATE - VOUT) > 3V. An open-drain power-good
output (PG) goes high-impedance 16ms after the startup
successfully completes. If startup does not complete
when tSU expires, the part enters normal operation and
uses the full CB threshold, ICB_TH. In this case, it is very
likely that the device output-current triggers an overcurrent fault.
The thermal-protection circuit is always active and the
internal MOSFET immediately turned off when the
thermal-shutdown threshold condition is reached.
Table 1. Output Enable Truth Table
POWER SUPPLY
PRECISION ANALOG INPUTS
OUT
VCC
UV
OV
VCC > VUVLO
VUV > VUV_TH
VOV < VOV_TH
On
VCC < VUVLO
X
X
Off
X
VUV < (VUV_TH - VUV_HYS)
X
Off
X
X
VOV > VOV_TH
Off
X = Don’t care.
VUV_TH and VOV_TH = 1.23V (typ).
IINRUSH
IN
MAX15093
MAX15093A
R1
8.25A
RCB = 40.2kΩ
2.05A
RCB = 10kΩ
UV
R2
1.23V
CONTROL
LOGIC
OV
1.5A
R3
GND
0.375A
2V
Figure 1. Undervoltage/Overvoltage-Threshold Setting
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10V
VIN - VOUT
Figure 2. Startup Inrush Current Foldback Characteristics
Maxim Integrated │ 10
MAX15093/MAX15093A
VariableSpeed/BiLevel Fault Protection
VariableSpeed/BiLevel fault protection incorporates
comparators with different thresholds and response times
to monitor the load current (see the “Typical Operating
Characteristics” on page 5section). Protection is
provided in normal operation (after the startup period has
expired) by discharging the MOSFET gate in response to
a fault condition. During a fault condition, the MAX15093A
enters autoretry mode, while the MAX15093 latches
off (see the Autoretry and Latchoff Fault Management
section).
Timeout Input (TIMEOUT)
After a startup phase is successfully completed and the
power-good output asserted, the TIMEOUT input has to be
pulled low (for at least 1ms) when the tDLY delay elapses. If
the TIMEOUT input is not pulled low when the tDLY elapses,
then the devices turn off the internal MOSFET immediately
and a new cycle is required for entering power-up mode.
Connect a capacitor between CDLY and GND to set a
1s/µF duration timeout delay. If this function is not implemented, connect TIMEOUT to GND for proper operation.
Charge Pump
An integrated charge pump provides the gate-drive voltage for the internal power MOSFET. The charge pump
generates the proper gate drive voltage above VIN to fully
enhance the internal power MOSFET and guarantee low
RON operation during normal state conditions.
During startup, the internal charge pump drives the GATE
of the MOSFET with a fixed 5.7µA current to enhance the
internal MOSFET with 28V/ms slew rate (typ). Connect
an external capacitor (CGATE) from GATE to GND to
reduce the output slew rate during startup. CGATE can be
calculated according to the following formula:
CGATE = IGATE x (tON/VOUT)
where IGATE is 5.7µA (typ), tON is the desired output
ramp-up time, and VOUT is assumed to start from zero.
The slew rate of the OUT pin during startup can be
controlled by IGATE/CGATE under light-load driving
conditions, or by the limited inrush current and the
external capacitive load, whichever is less.
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
external resistor between CB and GND sets this threshold
according to the following formula:
ICB = RCB/2300Ω/A - 1A
where ICB is load current in amps and RCB (the resistor
between CB and GND) is in ohms.
The circuit-breaker comparator is designed so the load
current can exceed the threshold for some amount of
time before tripping. The time delay varies inversely with
the overdrive above the threshold. The greater the overcurrent condition, the faster the response time, allowing
the devices to tolerate load transients and noise near the
circuit-breaker threshold. The maximum allowed external
resistor value is 40.2kΩ, which corresponds to a 16.5A typ
CB threshold setting. Programming the CB threshold to
a value higher than 16.5A could cause unsafe operating
conditions, resulting in damage to the devices.
The devices also feature catastrophic short-circuit
protection. During normal operation, if OUT is shorted
directly to GND, a fast protection circuit forces the gate of
the internal MOSFET to discharge quickly and disconnect
the output from the input.
Autoretry and Latchoff Fault Management
During a fault condition, the devices turn off the internal
MOSFET, disconnecting the output from the input. The
MAX15093A enters autoretry mode and restarts after
a tRESTART time delay has elapsed. The MAX15093
latches off and remains off until the UV input is cycled
off and on after a tRESTART delay. The delay prevents
the latchoff device to restart and operate with an unsafe
power-dissipation duty cycle.
Fault-Status Output (FAULT)
FAULT is an open-drain output that asserts low when
the following conditions occur: Current limit, overtemperature, IN-to-OUT short at startup (see the
IN-to-OUT Short-Circuit Protection section), and
TIMEOUT failure. FAULT remains low until the next
startup cycle. FAULT is capable of sinking up to 5mA
current when asserted.
Power-Good (PG) Delay
ILIM varies during startup as VOUT ramps up. See the
Electrical Characteristics table and Figure 2.
The devices feature an open-drain, power-good
output that asserts after a tPG delay, indicating that the
OUT voltage has reached (0.9 x VIN) voltage and
(VGATE - VOUT) > 3V.
Circuit-Breaker Comparator and Current Limit
Internal Regulator Output (REG)
(ΔVOUT/Δt) = ILIM/CLOAD
The current that passes through the internal power
MOSFET is compared to a circuit-breaker threshold. An
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The devices include a linear regulator that outputs 3.3V
at REG. REG provides power to the internal circuit blocks
of the devices and must not be loaded externally (except
Maxim Integrated │ 11
MAX15093/MAX15093A
for a resistor > 50kΩ connected from REG to TIMEOUT).
REG requires at least a 1µF capacitor to ground for
proper operation. This pin can be connected to VCC for
VCC values lower than VREG.
Current Report Output (ISENSE)
The ISENSE pin is the output of an accurate currentsense amplifier and provides a source current that is proportional to the load current flowing into the main switch.
The factory-trimmed current ratio is set to 160µA/A.
This produces a scaled voltage by connecting a resistor
between ISENSE and GND.
Thermal Protection
The devices enter a thermal-shutdown mode in the event
of overheating caused by excessive power dissipation
or high ambient temperature. When the junction tem
perature (TJ) exceeds +150°C (typ), the internal thermalprotection circuitry turns off the internal power MOSFET.
The devices recover from thermal-shutdown mode once
the junction temperature drops by 20°C (typ).
IN-to-OUT Short-Circuit Protection
At startup, after all the input conditions are satisfied (UV,
OV, VUVLO), the devices immediately check for an IN-toOUT short-circuit fault. If VOUT is greater than 90% of
VIN, the internal MOSFET cannot be turned on so FAULT
is asserted and the MAX15093A enters autoretry mode in
3.2s, while the MAX15093 latches off.
If VOUT is lower than 90% of VIN but greater than 50%
of VIN, the internal MOSFET still cannot be turned on. No
fault is asserted and the MOSFET can turn on as soon as
VOUT is lower than 50% of VIN.
Applications Information
Setting the Undervoltage Threshold
The devices feature an independent on/off control (UV)
for the internal MOSFET. The devices operate with an
input-voltage range of 2.7V to 18V and have a default
undervoltage-lockout threshold of 2.5V (typ).
The internal MOSFET remains off as long as VCC < 2.5V
or VUV < VUV_TH. The undervoltage-lockout threshold
is programmable using a resistive divider from IN to UV,
OV, and GND (Figure 1). When VCC is greater than 2.7V
and VUV exceeds the 1.23V (typ) threshold, the internal
MOSFET turns on and goes into normal operation. Use
the following equation to calculate the resistor values for
the desired undervoltage threshold:
VIN
R1
=
V
UV_TH
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−
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
where VIN is the desired turn-on voltage for the output
and VUV_TH is 1.23V. R1 and (R2 + R3) create a resistive
divider from IN to UV. During normal operating conditions,
VUV must remain above its 1.23V (typ) threshold. If VUV
falls 100mV (VUV_HYS) below the threshold, the internal
MOSFET turns off, disconnecting the load from the input.
Setting the Overvoltage Threshold
The devices also feature an independent overvoltageenable control (OV) for the internal MOSFET.
When VOV exceeds the 1.23V (typ) threshold, the internal
MOSFET turns off.
The overvoltage-lockout threshold is programmable using
a resistive divider from IN to UV, OV, and GND (Figure 1).
Use the following equation to calculate the resistor values
for the desired overvoltage threshold:
V
=
(R1 + R2 ) IN
VOV_TH
−
1 × R3
where VIN is the desired turn-off voltage for the output
and VOV_TH is 1.23V. R1 and (R2 + R3) create a resistive
divider from IN to OV. During normal operating conditions,
VOV must remain below its 1.23V (typ) threshold. If VOV
rises above the VOV_TH threshold, the internal MOSFET
turns off and disconnects the load from the input.
Input and Output Diodes
When including MAX15093 in a system, it is important to
have an input transient voltage suppressor (TVS) diode
between IN and GND, and an output Schottky diode
between OUT and GND. The input TVS diode suppresses
input spikes during hot plug-in events by limiting the maximum voltage. Input caps can also help keep IN stable
during hot plug-in events and it is recommended to use
both TVS and input caps. The output Schottky diode limits
negative voltage spikes and prevents negative recirculation current due to inductive shorts.
Wafer-Level Packaging (WLP)
Applications Information
For the latest application details on WLP construction,
dimensions, tape carrier information, PCB techniques,
bump-pad layout, recommended reflow temperature
profile, as well as the latest information on reliability testing results, refer to Application Note 1891: Wafer-Level
Packaging (WLP) and its Applications.
1 × (R2 + R3 )
Maxim Integrated │ 12
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Recommended Application Circuit for Hot-Swap Applications
12V
CONNECT THESE TWO
NODES
TOGETHER ON
THE MOTHERBOARD.
IN
RIN
OUT
TVS
COUT
CGATE
VCC
12V
D1
GATE
12V
CIN
R1
UV
CB
MAX15093
MAX15093A
REG
R2
RCB
RPG
RFAULT
PG
FAULT
ISENSE
CREG
RISENSE
OV
A/D
CONVERTER
CDLY
TIMEOUT
CCDLY
R3
GND
Ordering Information
Chip Information
PIN-PACKAGE
FAULT
MANAGEMENT
MAX15093GWL+T
40 WLP
Latched Off
MAX15093AGWL+T
40 WLP
Autoretry
PART
PROCESS: BiCMOS
Note: Part operates within the -40°C to +105°C temperature
range.
+Denotes a lead(Pb)-free/RoHS-compliant package.
T = Tape and reel.
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Maxim Integrated │ 13
MAX15093/MAX15093A
2.7V to 18V, 15A, Hot-Swap Solution
with Current Report Output
Revision History
REVISION
NUMBER
REVISION
DATE
PAGES
CHANGED
0
12/16
Initial release
—
1
7/17
Corrected typo (CB Threshold limit changed to 16.5A) in the Circuit-Breaker
Comparator and Current Limit section.
11
2
11/19
Corrected the Pin Description table. Refined the RCB equation.
3
11/20
Updated the Electrical Characteristics table
2, 3, 4
4
3/21
Updated the Electrical Characteristics table
3
DESCRIPTION
3, 4, 7, 8, 11
For information on other Maxim Integrated products, visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
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