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MAX660CSA+TG51

MAX660CSA+TG51

  • 厂商:

    AD(亚德诺)

  • 封装:

  • 描述:

    IC REG

  • 数据手册
  • 价格&库存
MAX660CSA+TG51 数据手册
19-3293; Rev. 2; 9/96 CMOS Monolithic Voltage Converter The MAX660 monolithic, charge-pump voltage inverter converts a +1.5V to +5.5V input to a corresponding -1.5V to -5.5V output. Using only two low-cost capacitors, the charge pump’s 100mA output replaces switching regulators, eliminating inductors and their associated cost, size, and EMI. Greater than 90% efficiency over most of its load-current range combined with a typical operating current of only 120µA provides ideal performance for both battery-powered and boardlevel voltage conversion applications. The MAX660 can also double the output voltage of an input power supply or battery, providing +9.35V at 100mA from a +5V input. A frequency control (FC) pin selects either 10kHz typ or 80kHz typ (40kHz min) operation to optimize capacitor size and quiescent current. The oscillator frequency can also be adjusted with an external capacitor or driven with an external clock. The MAX660 is a pincompatible, high-current upgrade of the ICL7660. The MAX660 is available in both 8-pin DIP and smalloutline packages in commercial, extended, and military temperature ranges. For 50mA applications, consider the MAX860/MAX861 pin-compatible devices (also available in ultra-small µMAX packages). ________________________Applications ___________________________ Features ♦ Small Capacitors ♦ 0.65V Typ Loss at 100mA Load ♦ Low 120µA Operating Current ♦ ♦ ♦ ♦ 6.5Ω Typ Output Impedance Guaranteed ROUT < 15Ω for C1 = C2 = 10µF Pin-Compatible High-Current ICL7660 Upgrade Inverts or Doubles Input Supply Voltage ♦ Selectable Oscillator Frequency: 10kHz/80kHz ♦ 88% Typ Conversion Efficiency at 100mA (IL to GND) ______________Ordering Information PART TEMP. RANGE PIN-PACKAGE MAX660CPA 0°C to +70°C 8 Plastic DIP MAX660CSA MAX660C/D MAX660EPA MAX660ESA MAX660MJA 0°C to +70°C 0°C to +70°C -40°C to +85°C -40°C to +85°C -55°C to +125°C 8 SO Dice* 8 Plastic DIP 8 SO 8 CERDIP *Contact factory for dice specifications. _________Typical Operating Circuits +VIN 1.5V TO 5.5V Laptop Computers Medical Instruments 1 FC Interface Power Supplies Hand-Held Instruments 2 Operational-Amplifier Power Supplies C1 1µF to 150µF 3 4 __________________Pin Configuration V+ 8 CAP+ MAX660 OSC GND CAP- LV 7 6 OUT 5 INVERTED NEGATIVE VOLTAGE OUTPUT C2 1µF to 150µF VOLTAGE INVERTER TOP VIEW 1 FC 1 8 V+ CAP+ 2 7 OSC 6 LV 5 OUT GND 3 MAX660 CAP- 4 C1 1µF to 150µF +VIN 2.5V TO 5.5V 2 3 4 FC V+ 8 CAP+ MAX660 OSC GND LV CAP- OUT 7 DOUBLED POSITIVE VOLTAGE OUTPUT C2 1µF to 150µF 6 5 DIP/SO POSITIVE VOLTAGE DOUBLER ________________________________________________________________ Maxim Integrated Products 1 For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800 MAX660 _______________General Description MAX660 CMOS Monolithic Voltage Converter ABSOLUTE MAXIMUM RATINGS Supply Voltage (V+ to GND, or GND to OUT) .......................+6V Operating Temperature Ranges LV Input Voltage ...............................(OUT - 0.3V) to (V+ + 0.3V) MAX660C_ _ ........................................................0°C to +70°C FC and OSC Input Voltages........................The least negative of MAX660E_ _ .....................................................-40°C to +85°C (OUT - 0.3V) or (V+ - 6V) to (V+ + 0.3V) MAX660MJA ...................................................-55°C to +125°C OUT and V+ Continuous Output Current..........................120mA Storage Temperature Range............................... -65°to +160°C Output Short-Circuit Duration to GND (Note 1) ....................1sec Lead Temperature (soldering, 10sec) ........................... +300°C Continuous Power Dissipation (TA = +70°C) Plastic DIP (derate 9.09mW/°C above + 70°C) ............727mW SO (derate 5.88mW/°C above +70°C) ..........................471mW CERDIP (derate 8.00mW/°C above +70°C) ..................640mW Note 1: OUT may be shorted to GND for 1sec without damage, but shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above +85°C, OUT must not be shorted to GND or V+, even instantaneously, or device damage may result. Stresses beyond those listed under “Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V+ = 5V, C1 = C2 = 150µF, test circuit of Figure 1, FC = open, TA = TMIN to TMAX, unless otherwise noted.) (Note 2) PARAMETER Operating Supply Voltage Supply Current Output Current CONDITIONS RL = 1kΩ No load MIN TYP Inverter, LV = open 3.0 5.5 Inverter, LV = GND 1.5 5.5 Doubler, LV = OUT 2.5 5.5 FC = open, LV = open FC = V+, LV = open TA ≤ +85°C, OUT more negative than -4V 100 TA > +85°C, OUT more negative than -3.8V 100 0.12 0.5 1 3 IL = 100mA OSC Input Current Power Efficiency 6.5 FC = open 5 10 FC = V+ 40 80 FC = open ±1 FC = V+ ±8 RL = 1kΩ connected between V+ and OUT 96 98 RL = 500Ω connected between OUT and GND 92 96 No load mA 10.0 Ω 12 kHz µA % 88 IL = 100mA to GND Voltage-Conversion Efficiency V 15 TA ≤ +85°C, C1 = C2 = 150µF TA ≤ +85°C Oscillator Frequency UNITS mA TA ≤ +85°C, C1 = C2 = 10µF, FC = V+ (Note 4) Output Resistance (Note 3) MAX 99.00 99.96 % Note 2: In the test circuit, capacitors C1 and C2 are 150µF, 0.2Ω maximum ESR, aluminum electrolytics. Capacitors with higher ESR may reduce output voltage and efficiency. See Capacitor Selection section. Note 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. See Capacitor Selection section. Note 4: The ESR of C1 = C2 ≤ 0.5Ω. Guaranteed by correlation, not production tested. 2 _______________________________________________________________________________________ CMOS Monolithic Voltage Converter All curves are generated using the test circuit of Figure 1 with V+ =5V, LV = GND, FC = open, and TA = +25°C, unless otherwise noted. The charge-pump frequency is one-half the oscillator frequency. Test results are also valid for doubler mode with GND = +5V, LV = OUT, and OUT = 0V, unless otherwise noted; however, the input voltage is restricted to +2.5V to +5.5V. MAX660 __________________________________________Typical Operating Characteristics IS V+ C1 V+ 8 1 FC 2 CAP+ 3 GND MAX660 LV 6 4 V+ (+5V ) OSC 7 OUT 5 CAP- RL IL VOUT C2 Figure 1. MAX660 Test Circuit SUPPLY CURRENT vs. OSCILLATOR FREQUENCY 250 200 LV = GND 150 100 OUTPUT VOLTAGE (V) SUPPLY CURRENT (mA) LV = OUT 1 0.1 0 0.01 2.0 2.5 3.0 3.5 4.0 4.5 5.0 84 VOUT -4.2 76 ICL7660 5.5 MAX660 -5.0 0.1 10 1 100 0 20 40 60 80 OSCILLATOR FREQUENCY (kHz) LOAD CURRENT (mA) EFFICIENCY vs. LOAD CURRENT OUTPUT VOLTAGE DROP vs. LOAD CURRENT OUTPUT VOLTAGE vs. OSCILLATOR FREQUENCY 84 V+ = 3.5V V+ = 1.5V 76 V+ = 4.5V V+ = 2.5V 68 20 40 60 LOAD CURRENT (mA) 80 100 68 60 100 MAX660-5 MAX660-3 1.0 ILOAD = 1mA V+ = 1.5V V+ = 2.5V 0.8 0.6 V+ = 3.5V 0.4 V+ = 4.5V -4.5 ILOAD = 10mA -4.0 ILOAD = 80mA -3.5 0.2 V+ = 5.5V -3.0 0 60 -5.0 OUTPUT VOLTAGE (V) 92 1.2 OUTPUT VOLTAGE DROP FROM SUPPLY (V) V+ = 5.5V MAX660-2 SUPPLY VOLTAGE (V) 100 0 EFF. -4.6 LV = OPEN 1.5 92 ICL7660 -3.8 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) 0.1 1 MAX660-6A 100 MAX660 -3.4 300 50 EFFICIENCY (%) -3.0 MAX660-4 350 SUPPLY CURRENT (µA) 10 MAX660-1 400 OUTPUT VOLTAGE AND EFFICIENCY vs. LOAD CURRENT, V+ = 5V 10 100 OSCILLATOR FREQUENCY (kHz) _________________________________________________________________________________________________ 3 EFFICIENCY (%) SUPPLY CURRENT vs. SUPPLY VOLTAGE _____________________________Typical Operating Characteristics (continued) OSCILLATORFREQUENCY FREQUENCY OSCILLATOR vs.SUPPLY SUPPLYVOLTAGE VOLTAGE vs. 80 ILOAD = 10mA 76 72 ILOAD = 80mA 68 MAX660-7 LVLV= =OPEN OPEN 60 60 FC = V+, OSC = OPEN FC = V+, OSC = OPEN 40 40 LV = GND 20 20 0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1.0 1.5 2.0 SUPPLY 2.5 3.0 3.5 (V) 4.0 4.5 5.0 5. VOLTAGE SUPPLY VOLTAGE (V) 100 OSCILLATOR FREQUENCY (kHz) OSCILLATOR FREQUENCY vs. EXTERNAL CAPACITANCE MAX660-9 100 OSCILLATOR FREQUENCY (kHz) 1 FC = OPEN 0.1 0.01 80 FC = V+, OSC = OPEN, RL = 100Ω 60 40 20 10000 1000 OUTPUT SOURCE RESISTANCE vs. SUPPLY VOLTAGE MAX660-13 14 10 8 6 4 2 25 20 10 5.5 8 6 4 2 FC = OPEN, OSC = OPEN RL = 100Ω -60 -40 -20 0 20 40 60 80 100 120 140 20 40 60 80 100 120 140 TEMPERATURE (°C) TEMPERATURE (°C) OUTPUT SOURCE RESISTANCE vs. TEMPERATURE OUTPUT SOURCE RESISTANCE vs. TEMPERATURE 30 OUTPUT SOURCE RESISTANCE (Ω) 12 4.5 0 -60 -40 -20 0 CAPACITANCE (pF) 3.5 12 C1, C2 = 150µF ALUMINUM ELECTROLYTIC CAPACITORS RL = 100Ω 15 V+ = 1.5V 10 V+ = 3.0V 5 30 OUTPUT SOURCE RESISTANCE (Ω) 100 10 2.5 SUPPLY VOLTAGE (V) 0 1 25 20 C1, C2 = 150µF OS-CON CAPACITORS RL = 100Ω 15 V+ = 1.5V 10 V+ = 3.0V 5 V+ = 5.0V V+ = 5.0V 0 1.5 2.0 2.5 3.0 3.5 4.0 SUPPLY VOLTAGE (V) 4 1.5 OSCILLATOR FREQUENCY vs. TEMPERATURE MAX660-11 OSCILLATOR FREQUENCY (kHz) FC = V+ FC = OPEN, OSC = OPEN 4 OSCILLATOR FREQUENCY vs. TEMPERATURE 100 10 6 0 OSCILLATOR FREQUENCY (kHz) 10 1 MAX660-10 0.1 LV = OPEN 8 2 64 60 10 MAX660-10A 88 84 80 80 MAX660-12 ILOAD = 1mA 12 OSCILLATOR FREQUENCY (kHz) 92 LV LV==GND GND OSCILLATOR OSCILLATORFREQUENCY FREQUENCY(kHz) (kHz) 96 EFFICIENCY (%) 100 MAX660-6 100 OSCILLATOR FREQUENCY vs. SUPPLY VOLTAGE MAX660-8 EFFICIENCY vs. OSCILLATOR FREQUENCY OUTPUT SOURCE RESISTANCE (Ω) MAX660 CMOS Monolithic Voltage Converter 4.5 5.0 5.5 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (°C) -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (°C) _______________________________________________________________________________________ CMOS Monolithic Voltage Converter 80 60 40 250 100 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 CAPACITANCE (µF) 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 OUTPUT CURRENT vs. CAPACITANCE: VIN = +3.0V, VOUT = -2.7V OUTPUT CURRENT vs. CAPACITANCE: VIN = +3.0V, VOUT = -2.4V 40 30 20 10 120 100 CURRENT (mA) FC = V+ OSC = OPEN MAX660 CHART -04 CAPACITANCE (µF) MAX660 CHART -03 CURRENT (mA) 150 0 0 50 FC = V+ OSC = OPEN 50 20 60 200 MAX660 CHART -02 FC = V+ OSC = OPEN CURRENT (mA) CURRENT (mA) 100 MAX660 CHART -01 120 OUTPUT CURRENT vs. CAPACITANCE: VIN = +4.5V, VOUT = -3.5V MAX660 OUTPUT CURRENT vs. CAPACITANCE: VIN = +4.5V, VOUT = -4V FC = V+ OSC = OPEN 80 60 40 20 0 0 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 CAPACITANCE (µF) 0.33 1.0 2.0 2.2 4.7 10 22 47 100 220 CAPACITANCE (µF) ______________________________________________________________Pin Description NAME FUNCTION PIN NAME INVERTER 1 FC Frequency Control for internal oscillator, FC = open, fOSC = 10kHz typ; FC = V+, fOSC = 80kHz typ (40kHz min), FC has no effect when OSC pin is driven externally. Same as Inverter 2 CAP+ Charge-Pump Capacitor, Positive Terminal Same as Inverter 3 GND Power-Supply Ground Input Power-Supply Positive Voltage Input 4 CAP- Charge-Pump Capacitor, Negative Terminal Same as Inverter 5 OUT Output, Negative Voltage Power-Supply Ground Input LV must be tied to OUT for all input voltages. DOUBLER 6 LV Low-Voltage Operation Input. Tie LV to GND when input voltage is less than 3V. Above 3V, LV may be connected to GND or left open; when overdriving OSC, LV must be connected to GND. 7 OSC Oscillator Control Input. OSC is connected to an internal 15pF capacitor. An external capacitor can be added to slow the oscillator. Take care to minimize stray capacitance. An external oscillator may also be connected to overdrive OSC. Same as Inverter; however, do not overdrive OSC in voltage-doubling mode. 8 V+ Power-Supply Positive Voltage Input Positive Voltage Output _______________________________________________________________________________________ 5 MAX660 CMOS Monolithic Voltage Converter ______________Detailed Description one-half of the charge-pump cycle. This introduces a peak-to-peak ripple of: IOUT + IOUT (ESRC2) VRIPPLE = 2(fPUMP) (C2) The MAX660 capacitive charge-pump circuit either inverts or doubles the input voltage (see Typical Operating Circuits). For highest performance, low effective series resistance (ESR) capacitors should be used. See Capacitor Selection section for more details. When using the inverting mode with a supply voltage less than 3V, LV must be connected to GND. This bypasses the internal regulator circuitry and provides best performance in low-voltage applications. When using the inverter mode with a supply voltage above 3V, LV may be connected to GND or left open. The part is typically operated with LV grounded, but since LV may be left open, the substitution of the MAX660 for the ICL7660 is simplified. LV must be grounded when overdriving OSC (see Changing Oscillator Frequency section). Connect LV to OUT (for any supply voltage) when using the doubling mode. For a nominal f PUMP of 5kHz (one-half the nominal 10kHz oscillator frequency) and C2 = 150µF with an ESR of 0.2Ω, ripple is approximately 90mV with a 100mA load current. If C2 is raised to 390µF, the ripple drops to 45mV. Positive Voltage Doubler The MAX660 operates in the voltage-doubling mode as shown in the Typical Operating Circuit. The no-load output is 2 x VIN. Other Switched-Capacitor Converters Please refer to Table 1, which shows Maxim’s chargepump offerings. __________Applications Information Changing Oscillator Frequency Negative Voltage Converter Four modes control the MAX660’s clock frequency, as listed below: The most common application of the MAX660 is as a charge-pump voltage inverter. The operating circuit uses only two external capacitors, C1 and C2 (see Typical Operating Circuits). Even though its output is not actively regulated, the MAX660 is very insensitive to load current changes. A typical output source resistance of 6.5Ω means that with an input of +5V the output voltage is -5V under light load, and decreases only to -4.35V with a load of 100mA. Output source resistance vs. temperature and supply voltage are shown in the Typical Operating Characteristics graphs. Output ripple voltage is calculated by noting the output current supplied is solely from capacitor C2 during FC OSC Oscillator Frequency Open FC = V+ Open Open 10kHz 80kHz Open or FC = V+ External Capacitor See Typical Operating Characteristics Open External Clock External Clock Frequency When FC and OSC are unconnected (open), the oscillator runs at 10kHz typically. When FC is connected to V+, the charge and discharge current at OSC changes from 1.0µA to 8.0µA, thus increasing the oscillator Table 1. Single-Output Charge Pumps Package Op. Current (typ, mA) Output Ω (typ) Pump Rate (kHz) Input (V) 6 MAX828 MAX829 MAX860 MAX861 MAX660 MAX1044 ICL7662 ICL7660 SOT 23-5 SOT 23-5 SO-8, µMAX SO-8, µMAX SO-8 SO-8, µMAX SO-8 SO-8, µMAX 0.06 0.15 0.03 0.25 0.08 20 20 12 12 6.5 6.5 125 55 12 35 6, 50, 130 13, 100, 150 5, 40 5 10 10 1.25 to 5.5 1.25 to 5.5 1.5 to 5.5 1.5 to 5.5 1.5 to 5.5 1.5 to 10 1.5 to 10 1.5 to 10 0.2 at 6kHz, 0.3 at 13kHz, 0.12 at 5kHz, 0.6 at 50kHz, 1.1 at 100kHz, 1 at 40kHz 1.4 at 130kHz 2.5 at 250kHz _______________________________________________________________________________________ ________________Capacitor Selection Three factors (in addition to load current) affect the MAX660 output voltage drop from its ideal value: 1) MAX660 output resistance 2) Pump (C1) and reservoir (C2) capacitor ESRs 3) C1 and C2 capacitance The voltage drop caused by MAX660 output resistance is the load current times the output resistance. Similarly, the loss in C2 is the load current times C2’s ESR. The loss in C1, however, is larger because it handles currents that are greater than the load current during charge-pump operation. The voltage drop due to C1 is therefore about four times C1’s ESR multiplied by the load current. Consequently, a low (or high) ESR capacitor has a much greater impact on performance for C1 than for C2. Generally, as the pump frequency of the MAX660 increases, the capacitance values required to maintain comparable ripple and output resistance diminish proportionately. The curves of Figure 2 show the total circuit 1kHz 2kHz 5kHz 10kHz 20kHz 50kHz MAX660-fig 2 TOTAL OUTPUT SOURCE RESISTANCE (Ω) In the inverter mode, OSC may also be overdriven by an external clock source that swings within 100mV of V+ and GND. Any standard CMOS logic output is suitable for driving OSC. When OSC is overdriven, FC has no effect. Also, LV must be grounded when overdriving OSC. Do not overdrive OSC in voltage-doubling mode. Note: In all modes, the frequency of the signal appearing at CAP+ and CAP- is one-half that of the oscillator. Also, an undesirable effect of lowering the oscillator frequency is that the effective output resistance of the charge pump increases. This can be compensated by increasing the value of the charge-pump capacitors (see Capacitor Selection section and Typical Operating Characteristics). In some applications, the 5kHz output ripple frequency may be low enough to interfere with other circuitry. If desired, the oscillator frequency can then be increased through use of the FC pin or an external oscillator as described above. The output ripple frequency is onehalf the selected oscillator frequency. Increasing the clock frequency increases the MAX660’s quiescent current, but also allows smaller capacitance values to be used for C1 and C2. 20 18 16 14 12 ESR = 0.25Ω FOR BOTH C1 AND C2 MAX660 OUTPUT SOURCE RESISTANCE ASSUMED TO BE 5.25Ω 10 8 6 4 2 0 1 2 4 6 8 10 100 1000 CAPACITANCE (µF) Figure 2. Total Output Source Resistance vs. C1 and C2 Capacitance (C1 = C2) output resistance for various capacitor values (the pump and reservoir capacitors’ values are equal) and oscillator frequencies. These curves assume 0.25Ω capacitor ESR and a 5.25Ω MAX660 output resistance, which is why the flat portion of the curve shows a 6.5Ω (RO MAX660 + 4 (ESRC1) + ESRC2) effective output resistance. Note: R O = 5.25Ω is used, rather than the typical 6.5Ω, because the typical specification includes the effect of the ESRs of the capacitors in the test circuit. In addition to the curves in Figure 2, four bar graphs in the Typical Operating Characteristics show output current for capacitances ranging from 0.33µF to 220µF. Output current is plotted for inputs of 4.5V (5V-10%) and 3.0V (3.3V-10%), and allow for 10% and 20% output droop with each input voltage. As can be seen from the graphs, the MAX660 6.5Ω series resistance limits increases in output current vs. capacitance for values much above 47µF. Larger values may still be useful, however, to reduce ripple. To reduce the output ripple caused by the charge pump, increase the reservoir capacitor C2 and/or reduce its ESR. Also, the reservoir capacitor must have low ESR if filtering high-frequency noise at the output is important. Not all manufacturers guarantee capacitor ESR in the range required by the MAX660. In general, capacitor ESR is inversely proportional to physical size, so larger capacitance values and higher voltage ratings tend to reduce ESR. _______________________________________________________________________________________ 7 MAX660 frequency eight times. In the third mode, the oscillator frequency is lowered by connecting a capacitor between OSC and GND. FC can still multiply the frequency by eight times in this mode, but for a lower range of frequencies (see Typical Operating Characteristics). 100kHz CMOS Monolithic Voltage Converter MAX660 CMOS Monolithic Voltage Converter The following is a list of manufacturers who provide low-ESR electrolytic capacitors: Manufacturer/ Series Phone Fax AVX TPS Series (803) 946-0690 (803) 626-3123 Low-ESR tantalum SMT AVX TAG Series (803) 946-0690 (803) 626-3123 Low-cost tantalum SMT Matsuo 267 Series (714) 969-2491 (714) 960-6492 Low-cost tantalum SMT Sprague 595 Series (603) 224-1961 (603) 224-1430 Aluminum electrolytic thru-hole Sanyo MV-GX Series (619) 661-6835 (619) 661-1055 Aluminum electrolytic SMT Sanyo CV-GX Series (619) 661-6835 (619) 661-1055 Aluminum electrolytic thru-hole Nichicon PL Series (847) 843-7500 (847) 843-2798 Low-ESR tantalum SMT United Chemi-Con (847) 696-2000 (Marcon) (847) 696-9278 Ceramic SMT TDK (847) 390-4428 Ceramic SMT (847) 390-4373 Comments Cascading Devices To produce larger negative multiplication of the initial supply voltage, the MAX660 may be cascaded as shown in Figure 3. The resulting output resistance is approximately equal to the sum of the individual MAX660 ROUT values. The output voltage, where n is an integer representing the number of devices cascaded, is defined by VOUT = -n (VIN). Paralleling Devices Paralleling multiple MAX660s reduces the output resistance. As illustrated in Figure 4, each device requires its own pump capacitor C1, but the reservoir capacitor C2 serves all devices. The value of C2 should be increased by a factor of n, where n is the number of devices. Figure 4 shows the equation for calculating output resistance. ROUT = ROUT (of MAX660) n (NUMBER OF DEVICES) +VIN +VIN 8 8 8 2 C1 3 4 2 8 2 RL 2 MAX660 "1" 3 C1n 4 5 C1 MAX660 "n" 3 4 5 MAX660 "1" C1n 3 5 4 MAX660 "n" 5 VOUT C2n C2 VOUT = -nVIN C2 Figure 3. Cascading MAX660s to Increase Output Voltage 8 Figure 4. Paralleling MAX660s to Reduce Output Resistance _______________________________________________________________________________________ CMOS Monolithic Voltage Converter This dual function is illustrated in Figure 5. In this circuit, capacitors C1 and C3 perform the pump and reservoir functions respectively for generation of the negative voltage. Capacitors C2 and C4 are respectively pump and reservoir for the multiplied positive voltage. This circuit configuration, however, leads to higher source impedances of the generated supplies. This is due to the finite impedance of the common charge-pump driver. 1M 1M OPEN-DRAIN LOW-BATTERY OUTPUT 3V LITHIUM BATTERY DURACELL DL123A LBI 3 8 8 IN 2 6 4 5V/100mA 2 150µF MAX667 LBO 7 MAX660 150µF OUT 150 µF DD 1 620k 1M 5 SET 6 GND SHDN 4 5 220k +VIN 8 NOTE: ALL 150µF CAPACITORS ARE MAXC001, AVAILABLE FROM MAXIM. D1, D2 = 1N4148 D1 2 MAX660 3 5 4 6 VOUT = -VIN C1 Figure 6. MAX660 generates a +5V regulated output from a 3V lithium battery and operates for 16 hours with a 40mA load. C2 D2 C3 C4 VOUT = (2VIN) (VFD1) - (VFD2) Figure 5. Combined Positive Multiplier and Negative Converter _______________________________________________________________________________________ 9 MAX660 Combined Positive Supply Multiplication and Negative Voltage Conversion MAX660 CMOS Monolithic Voltage Converter ___________________Chip Topography FC V+ CAP+ GND OSC 0.120" (3.05mm) LV CAP- OUT 0.073" (1.85mm) TRANSISTOR COUNT = 89 SUBSTRATE CONNECTED TO V+. 10 ______________________________________________________________________________________ CMOS Monolithic Voltage Converter D E DIM E1 A A1 A2 A3 B B1 C D1 E E1 e eA eB L A3 A A2 L A1 0° - 15° C e B1 eA B eB D1 Plastic DIP PLASTIC DUAL-IN-LINE PACKAGE (0.300 in.) INCHES MAX MIN 0.200 – – 0.015 0.175 0.125 0.080 0.055 0.022 0.016 0.065 0.045 0.012 0.008 0.080 0.005 0.325 0.300 0.310 0.240 – 0.100 – 0.300 0.400 – 0.150 0.115 PKG. DIM PINS P P P P P N D D D D D D 8 14 16 18 20 24 INCHES MAX MIN 0.348 0.390 0.735 0.765 0.745 0.765 0.885 0.915 1.015 1.045 1.14 1.265 MILLIMETERS MIN MAX – 5.08 0.38 – 3.18 4.45 1.40 2.03 0.41 0.56 1.14 1.65 0.20 0.30 0.13 2.03 7.62 8.26 6.10 7.87 2.54 – 7.62 – – 10.16 2.92 3.81 MILLIMETERS MIN MAX 8.84 9.91 18.67 19.43 18.92 19.43 22.48 23.24 25.78 26.54 28.96 32.13 21-0043A DIM D 0°-8° A 0.101mm 0.004in. e B A1 E C H L Narrow SO SMALL-OUTLINE PACKAGE (0.150 in.) A A1 B C E e H L INCHES MAX MIN 0.069 0.053 0.010 0.004 0.019 0.014 0.010 0.007 0.157 0.150 0.050 0.244 0.228 0.050 0.016 DIM PINS D D D 8 14 16 MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 3.80 4.00 1.27 5.80 6.20 0.40 1.27 INCHES MILLIMETERS MIN MAX MIN MAX 0.189 0.197 4.80 5.00 0.337 0.344 8.55 8.75 0.386 0.394 9.80 10.00 21-0041A ______________________________________________________________________________________ 11 MAX660 ________________________________________________________Package Information MAX660 CMOS Monolithic Voltage Converter ___________________________________________Package Information (continued) DIM E1 E D A 0°-15° Q L L1 e C B1 B S1 S CERDIP CERAMIC DUAL-IN-LINE PACKAGE (0.300 in.) A B B1 C E E1 e L L1 Q S S1 INCHES MIN MAX – 0.200 0.014 0.023 0.038 0.065 0.008 0.015 0.220 0.310 0.290 0.320 0.100 0.125 0.200 0.150 – 0.015 0.070 – 0.098 0.005 – DIM PINS D D D D D D 8 14 16 18 20 24 MILLIMETERS MIN MAX – 5.08 0.36 0.58 0.97 1.65 0.20 0.38 5.59 7.87 7.37 8.13 2.54 3.18 5.08 3.81 – 0.38 1.78 – 2.49 0.13 – INCHES MILLIMETERS MIN MAX MIN MAX – 0.405 – 10.29 – 0.785 – 19.94 – 0.840 – 21.34 24.38 – 0.960 – 26.92 – 1.060 – 32.51 – 1.280 – 21-0045A Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 12 ____________________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600 © 1996 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
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