EVALUATION KIT AVAILABLE
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
General Description
The MAX8513/MAX8514 integrate a voltage-mode PWM
step-down DC-DC controller and two LDO controllers, a
voltage monitor, and a power-on reset for the lowest-cost
power-supply and monitoring solution for xDSL modems,
routers, gateways, and set-top boxes.
The DC-DC controller switching frequency can be set with
an external resistor from 300kHz to 1.4MHz, to allow for
the optimization of cost, size, and efficiency. For noisesensitive applications, the DC-DC controller can also
be synchronized to an external clock, minimizing noise
interference. Operation above 1.1MHz reduces noise
for high data-rate xDSL applications. An adjustable softstart and adjustable foldback current limit provide reliable
startup and fault protection. The DC-DC controller output
voltage can be set externally to a voltage from 1.25V to
5.5V. Current limiting is accomplished by inductor current
sensing for improved efficiency, or by an external sense
resistor for better accuracy.
The MAX8513/MAX8514s’ first LDO controller is designed
to provide a low-cost, high-current regulated output from
0.8V to 5.5V using an N-channel MOSFET or a lowcurrent output using a low-cost NPN transistor. The
MAX8513’s second regulator can be used to generate
0.8V to 27V output with a low-cost PNP transistor. Both
LDO regulators can operate either from the DC-DC controller output or from a higher voltage derived with a flyback overwinding on the DC-DC converter inductor. The
MAX8514’s second LDO regulator is designed to provide
a negative output with an NPN transistor.
A sequence input allows the outputs to either power up
together, or for the DC-DC regulator to power up first and
each LDO controller to power up in sequence. An input
power-fail output (PFO) is provided for input power-fail
warning, such as in dying-gasp applications. A power-on
reset circuit with a 140ms delay is also included to indicate
when all outputs have achieved regulation and stabilized.
Applications
●● xDSL, Cable, ISDN Modems, and Routers
●● Wireless Routers
●● Set-Top Boxes
Pin Configurations appear at end of data sheet.
19-3178; Rev 1; 4/14
Features
●● Low-Cost DC-DC Controller with Two LDOs
●● Wide Input Range: 4.5V to 28V
●● 300kHz to 1.4MHz Adjustable Switching Frequency
●● Low Noise for High Data-Rate xDSL Applications
●● Synchronizable to External Clock
●● Adjustable Soft-Start
●● Lossless Adjustable Foldback Current Limit
●● Power-On Reset with 140ms Delay
●● Adjustable Input Power-Fail Warning for Dying Gasp
●● Selectable Output-Voltage Sequencing or
Output-Voltage Tracking
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
MAX8513EEI
-40°C to +85°C
28 QSOP
MAX8514EEI
-40°C to +85°C
28 QSOP
MAX8514AEI
-40°C to +125°C
28 QSOP
Functional Diagram
VIN
(4.5V TO 28V)
OFF
ON
SYNC
OUTPUT
POWER-ON RESET
INPUT POWERFAIL MONITOR
MAX8513
STEPDOWN
CONTROLLER
LDO
CONTROLLER 1
VOUT1
(1.25V TO 5.5V)
VOUT2
(0.8V TO VOUT1)
LDO
CONTROLLER 2
VOUT3
(0.8V TO 27V)
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Absolute Maximum Ratings
IN, DRV3P, SUP2 to GND......................................-0.3V to +30V
DRV2 to GND........................................ -0.3V to (VSUP2 + 0.3V)
DRV3N to GND...................(VSUP3N - 28V) to (VSUP3N + 0.3V)
FREQ, PFI, PFO, POR, SUP3N, SYNC/EN,
CSP, CSN to GND................................................-0.3V to +6V
VL to GND..................-0.3V to the lesser of (VIN + 0.3V) or +6V
COMP1, FB1, FB2, FB3P, FB3N, REF, ILIM,
SS, SEQ to GND....................................-0.3V to (VVL + 0.3V)
PVL to PGND...........................................................-0.3V to +6V
DL to PGND.............................................-0.3V to (VPVL + 0.3V)
BST to LX.................................................................-0.3V to +6V
DH to LX...................................................-0.3V to (VBST + 0.3V)
PGND to GND.......................................................-0.3V to +0.3V
VL Short Circuit to GND.............................................Continuous
Continuous Power Dissipation
28-Pin QSOP (derate 10.8mW/°C above +70°C)........860mW
Operating Temperature Range
MAX8513EEI, MAX8514EEI........................... -40°C to +85°C
MAX8514AEI................................................. -40°C to +125°C
Junction Temperature.......................................................+150°C
Storage Temperature Range............................. -65°C to +150°C
Lead Temperature (soldering, 10s).................................. +300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GENERAL
IN Operating Range
IN = VL
5.5
28.0
4.5
5.5
V
IN Supply Current
VFB1 = 1.3V, VFB2 = VFB3 = 1.0V, does
not include switching current to PVL and
BST, SYNC/EN = VL
2.6
3.2
mA
IN Shutdown Current
VSYNC/EN = 0, RFREQ = 50kΩ
200
300
µA
5
5.25
V
560
mV
VL REGULATOR
VL Output Voltage
VIN = 6V to 28V, IVL = 0.1mA to 40mA
4.75
VL Dropout Voltage
From IN to VL, VIN = 5V, IVL = 40mA
VL Line Regulation
VIN = 6V to 28V, IVL = 5mA
VL Undervoltage Threshold
VL rising, VHYST = 675mV (typ)
3.6
4.2
V
(Note 1)
1.25
5.50
V
1.259
V
0.05
%
OUT1 (BUCK CONVERTER)
Output Voltage Range
VOUT1
FB1 Regulation Threshold
VFB1
1.234
1.25
Error-Amplifier Open-Loop
Voltage Gain
AVOL
65
90
-200
+10
FB1 Input Bias Current
IFB1_BIAS
VFB1 = 1.3V
Error-Amplifier Gain Bandwidth
dB
+200
25
nA
MHz
DH Output-Resistance High
RDH_HIGH
1.5
2.55
Ω
DH Output-Resistance Low
RDH_LOW
1.2
2.1
Ω
DL Output-Resistance High
RDL_HIGH
2.5
5
Ω
DL Output-Resistance Low
RDL_LOW
0.7
1.3
Ω
Driver Dead Time
www.maximintegrated.com
tdt
Starts from VDL = 1V or (VDH - VLX) = 1V
50
ns
Maxim Integrated │ 2
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
VILIM = 2.00V, VCSN = 0 to 5.5V
Current-Limit Threshold (Positive)
Current-Limit Threshold
(Negative)
VCS
VCS
MIN
TYP
MAX
246
275
300
VILIM = 0.50V, VCSN = 0 to 5.5V
50
67
81
VILIM = VVL, VCSN = 0 to 5.5V
151
170
188
VILIM = 2.00V, VCSN = 0 to 5.5V
-333
-272
-199
UNITS
mV
VILIM = 0.50V, VCSN = 0 to 5.5V
-90
-67
-42
VILIM = VVL, VCSN = 0 to 5.5V
-210
-166
-122
CSP and CSN Bias Current
VCSP = VCSN = 0 to 5.5V
-120
+135
µA
ILIM Bias Current
VILIM = 1.25V
-5.3
-5
-4.7
µA
SS Soft-Start Charge Current
VSS = 0.6V
15
25
35
µA
100
200
Ω
0.03
20
µA
1.125
1.20
V
Soft-Start Discharge Resistance
VLX = VIN = 28V, VBST = 33V, VPVL = 5V,
VSYNC/EN = 0
LX, BST, PVL Leakage Current
FB1 Power-On Reset Threshold
1.08
mV
OUT2 (POSITIVE LDO)
SUP2 Operating Range
VSUP2
(Note 1)
4.5
28.0
V
DRV2 Clamp Voltage
VDRV2
VFB2 = 0.75V
7.75
9.00
V
300
µA
SUP2 Supply Current
160
SUP2 Shutdown Supply Current
VSYNC/EN = 0
FB2 Regulation Voltage
VFB2
FB2 Input Bias Current
IFB2_BIAS
0.784
VFB2 = 0.75V
3
10
µA
0.80
0.808
V
0.01
100
nA
DRV2 Output Current Limit
VIN = 5V, VDRV2 = 5V, VFB2 = 0.77V
15
30
DRV2 Output Current Limit
During Soft-Start
VIN = 6V, VDRV2 = 5V, VFB2 = 0.70V
8
10
12
mA
0.690
0.720
0.742
V
0.12
0.2
0.36
S
FB2 Power-On Reset Threshold
FB2 to DRV2 Transconductance
GC2
IDRV2 = +250µA, -250µA
mA
OUT3P (POSITIVE PNP LDO) (MAX8513 ONLY)
DRV3P Operating Range
VDRV3P
FB3P Regulation Voltage
FB3P to DRV3P Large-Signal
Transconductance
GC3P
28
V
VDRV3P = 5V, IDRV3P = 1mA
0.790
1
0.803
0.816
V
VDRV3P = 5V, IDRV3P = 0.5mA to 5mA
0.38
0.6
1.1
S
0.01
100
nA
Feedback Input Bias Current
VFB3P = 0.75V
Driver Sink Current
VFB3P = 0.75V
FB3P POR Threshold
FB3P Soft-Start Period
www.maximintegrated.com
DRV3P = 2.5V
15
DRV3P = 4.0V
35
mA
40
0.690
0.720
1312
0.742
V
Clock
Cycles
Maxim Integrated │ 3
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
OUT3N (NEGATIVE NPN LDO CONTROLLER) (MAX8514 ONLY)
SUP3N Operating Range
(Note 1)
1.5
5.5
V
DRV3N Operating Range
(Note 1)
VSUP3N
- 21V
VSUP3N
- 1.5V
V
SUP3N Supply Current
VDRV3N = 1.5V, VSUP3N = 3.5V,
IDRV3N = -1mA (source)
1.1
2
mA
FB3N Regulation Voltage
VDRV3N = 1.5V, VSUP3N = 3.5V,
IDRV3N = -1mA (source)
-20
-5
+10
mV
0.225
0.36
0.550
S
60
1000
nA
FB3N to DRV3N Large-Signal
Transconductance
GC3N
VDRV3N = 0, IDRV3N = -0.5mA to -5mA
(source)
Feedback Input Bias Current
VFB3N = -100mV
Driver Source Current
VFB3N = 200mV, VDRV3N = 0,
VSUP3N = 3.5V
FB3N POR Threshold
13
25
450
500
FB3N Soft-Start Period
mA
550
mV
Clock
Cycles
2048
REFERENCE
REF Output Voltage
VREF
-2µA < IREF < +50µA
1.231
1.25
1.269
RFREQ = 10.7kΩ ±1% from FREQ to GND
1300
1390
1460
RFREQ = 15.0kΩ ±1% from FREQ to GND
933
985
1040
RFREQ = 50.0kΩ ±1% from FREQ to GND
260
290
324
V
OSCILLATOR
Frequency
fS
FREQ Resistance-Frequency
Product
MHz
x kΩ
15.0
RFREQ = 10.7kΩ ±1% from FREQ to GND
77
83
91
Maximum Duty Cycle
(Measured at DH Pin)
RFREQ = 15.0kΩ ±1% from FREQ to GND
80
87
95
RFREQ = 50.0kΩ ±1% from FREQ to
GND
93
96
99
Minimum On-Time
(Measured at DH Pin)
RFREQ = 10.7kW ±1% from FREQ to GND
20
62
SYNC/EN Pulse Width
Low or high (Note 1)
200
SYNC/EN Frequency Range
SYNC/EN input frequency needs to be
within ±30% of the value set at the FREQ
pin (Note 1)
200
SYNC/EN Input Voltage, High
SYNC/EN Input Current
www.maximintegrated.com
VSYNC/EN = 0 to 5.5V
-1
%
ns
ns
1850
2.4
SYNC/EN Input Voltage, Low
kHz
kHz
V
0.8
V
+1
µA
Maxim Integrated │ 4
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER
SEQ, PFI, PFO, POR
SYMBOL
CONDITIONS
SEQ Input-Voltage High
MIN
TYP
MAX
2.4
UNITS
V
SEQ Input-Voltage Low
0.8
V
1
10
µA
IPOR = 1.6mA
10
200
IPOR = 0.1mA,
VIN = 1.0V
20
200
0.001
1
µA
ms
SEQ Input Current
VSEQ = 0 to VVL
POR Output-Voltage Low
VFB1, VFB2, VFB3P,
VFB3N, out-of-regulation
POR Output Leakage Current
VFB1, VFB2, and VFB3P or VFB3N,
in-regulation
POR Power-Ready Delay Time
From VFB1, VFB2, and VFB3P or VFB3N,
in-regulation to POR = high impedance
140
315
560
PFI Input Threshold
Falling, VHYST = 20mV
1.20
1.22
1.25
V
PFI Input Bias Current
VPFI = 1.0V
0.1
100
nA
20
200
PFI = 1.1V
IPFO = 1.6mA
PFO Output-Voltage Low
IPFO = 0.1mA,
VIN = 1.0V
10
200
PFO Output Leakage Current
PFI = 1.4V, PFO = 5V
0.001
1
Junction temperature rising
+170
°C
25
°C
mV
mV
µA
THERMAL PROTECTION
Thermal Shutdown
Thermal-Shutdown Hysteresis
Electrical Characteristics
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
5.5
28.0
4.5
5.5
UNITS
GENERAL
IN Operating Range
IN = VL
V
IN Supply Current
VFB1 = 1.3V, VFB2 = VFB3 = 1.0V, does not
include switching current to PVL and BST,
SYNC/EN = VL
3.2
mA
IN Shutdown Current
VSYNC/EN = 0, RFREQ = 50kΩ
300
µA
5.25
V
610
mV
4.2
V
VL REGULATOR
VL Output Voltage
VIN = 6V to 28V, IVL = 0.1mA to 40mA
VL Dropout Voltage
From IN to VL, VIN = 5V, IVL = 40mA
VL Undervoltage Threshold
VL rising, VHYST = 675mV (typ)
www.maximintegrated.com
4.75
3.6
Maxim Integrated │ 5
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
OUT1 (BUCK CONVERTER)
Output Voltage Range
VOUT1
1.25
5.50
V
FB1 Regulation Threshold
VFB1
(Note 1)
1.225
1.265
V
Error-Amplifier Open-Loop
Voltage Gain
AVOL
65
dB
FB1 Input Bias Current
IFB1_BIAS
+200
nA
DH Output-Resistance High
RDH_HIGH
2.55
Ω
DH Output-Resistance Low
RDH_LOW
2.1
Ω
DL Output-Resistance High
RDL_HIGH
5
Ω
DL Output-Resistance Low
RDL_LOW
1.3
Ω
Current-Limit Threshold (pos)
Current-Limit Threshold (neg)
VCS
VCS
VFB1 = 1.3V
-200
VILIM = 2.00V, VCSN = 0 to 5.5V
243
303
VILIM = 0.50V, VCSN = 0 to 5.5V
49
83
VILIM = VVL, VCSN = 0 to 5.5V
147
190
VILIM = 2.00V, VCSN = 0 to 5.5V
-333
-199
VILIM = 0.50V, VCSN = 0 to 5.5V
-90
-42
mV
mV
VILIM = VVL, VCSN = 0 to 5.5V
-210
-122
CSP and CSN Bias Current
VCSP = VCSN = 0 to 5.5V
-120
+135
µA
ILIM Bias Current
VILIM = 1.25V
-5.7
-4.3
µA
SS Soft-Start Charge Current
VSS = 0.6V
15
35
µA
200
Ω
Soft-Start Discharge Resistance
VLX = VIN = 28V, VBST = 33V, VPVL = 5V,
VSYNC/EN = 0
LX, BST, PVL Leakage Current
FB1 Power-On Reset Threshold
20
µA
1.08
1.20
V
V
OUT2 (POSITIVE LDO)
SUP2 Operating Range
VSUP2
(Note 1)
4.5
28.0
DRV2 Clamp Voltage
VDRV2
VFB2 = 0.75V
7.75
9.00
V
300
µA
10
µA
SUP2 Supply Current
VSYNC/EN = 0
SUP2 Shutdown Supply Current
FB2 Regulation Voltage
VFB2
FB2 Input Bias Current
IFB2_BIAS
0.775
VFB2 = 0.75V
0.816
V
150
nA
DRV2 Output Current Limit
VIN = 5V, VDRV2 = 5V, VFB2 = 0.77V
12
DRV2 Output Current Limit
During Soft-Start
VIN = 6V, VDRV2 = 5V, VFB2 = 0.70V
8
12
mA
0.690
0.742
V
0.11
0.41
S
FB2 Power-On Reset Threshold
FB2 to DRV2 Transconductance
www.maximintegrated.com
GC2
IDRV2 = +250µA, -250µA
mA
Maxim Integrated │ 6
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
MAX
UNITS
OUT3P (POSITIVE PNP LDO) (MAX8513 ONLY)
DRV3P Operating Range
VDRV3P
FB3P Regulation Voltage
FB3P to DRV3P Large-Signal
Transconductance
VDRV3P = 5V, IDRV3P = 1mA
GC3P
VDRV3P = 5V, IDRV3P = 0.5mA to 5mA
Feedback Input Bias Current
VFB3P = 0.75V
Driver Sink Current
VFB3P = 0.75V
1
28
V
0.780
0.820
V
0.3
1.4
S
100
DRV3P = 2.5V
FB3P POR Threshold
15
nA
mA
0.690
0.742
V
OUT3N (NEGATIVE NPN LDO CONTROLLER) (MAX8514 ONLY)
SUP3N Operating Range
(Note 1)
1.5
5.5
V
DRV3N Operating Range
(Note 1)
VSUP3N
-21V
VSUP3N
-15V
V
SUP3N Supply Current
VDRV3N = 1.5V, VSUP3N = 3.5V,
IDRV3N = -1mA (source)
2
mA
FB3N Regulation Voltage
VDRV3N = 1.5V, VSUP3N = 3.5V,
IDRV3N = -1mA (source)
-20
+10
mV
0.225
0.550
S
1500
nA
FB3N to DRV3N Large-Signal
Transconductance
GC3N
VDRV3N = 0, IDRV3N = -0.5mA to -5mA
(source)
Feedback Input Bias Current
VFB3N = -100mV
Driver Source Current
VFB3N = 200mV, VDRV3N = 0,
VSUP3N = 3.5V
FB3N POR Threshold
13
mA
450
550
mV
-2µA < IREF < +50µA
1.22
1.27
V
RFREQ = 10.7kΩ ±1% from FREQ to GND
1300
1500
RFREQ = 15.0kΩ ±1% from FREQ to GND
917
1070
RFREQ = 50.0kΩ ±1% from FREQ to GND
250
335
RFREQ = 10.7kΩ ±1% from FREQ to GND
77
91
RFREQ = 15.0kΩ ±1% from FREQ to GND
80
95
RFREQ = 50.0kΩ ±1% from FREQ to GND
93
99
REFERENCE
REF Output Voltage
VREF
OSCILLATOR
Frequency
Maximum Duty Cycle
(Measured at DH Pin)
fS
Minimum On-Time
(Measured at DH Pin)
RFREQ = 10.7kΩ ±1% from FREQ to GND
SYNC/EN Pulse Width
Low or high (Note 1)
200
SYNC/EN Frequency Range
SYNC/EN input frequency needs to be
within ±30% of the value set at the FREQ
pin (Note 1)
200
www.maximintegrated.com
62
kHz
%
ns
ns
1850
kHz
Maxim Integrated │ 7
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Electrical Characteristics (continued)
(VIN = VLX = VSUP2 = 12V, VPVL = VBST - VLX = VDRV3P = 5V, VSUP3N = 3.3V, VDRV3N = -5V, CVL = 4.7µF, CREF = 0.22µF, RFREQ =
15.0kΩ, TA = -40°C to +125°C (Note 2), unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
SYNC/EN Input Voltage, High
MIN
SYNC/EN Input Voltage, Low
SYNC/EN Input Current
SEQ, PFI, PFO, POR
SEQ Input Voltage, High
MAX
2.4
VSYNC/EN = 0 to 5.5V
-1
V
0.8
V
+1
µA
2.4
SEQ Input Voltage, Low
UNITS
V
0.8
V
10
µA
IPOR = 1.6mA
200
mV
IPOR = 0.1mA,
VIN = 1.0V
200
mV
1
µA
ms
SEQ Input Current
VSEQ = 0 to VVL
POR Output Voltage, Low
VFB1, VFB2, VFB3P,
VFB3N out-of-regulation
POR Output Leakage Current
VFB1, VFB2, and VFB3P or VFB3N,
in- regulation
POR Power-Ready Delay Time
From VFB1, VFB2, and VFB3P or VFB3N,
in- regulation to POR = high impedance
140
560
PFI Input Threshold
Falling, VHYST = 20mV
1.20
1.25
V
PFI Input Bias Current
VPFI = 1.0V
300
nA
IPFO = 1.6mA
200
mV
PFO Output Voltage, Low
PFI = 1.1V
IPFO = 0.1mA,
VIN = 1.0V
200
mV
PFO Output Leakage Current
PFI = 1.4V, PFO = 5V
1
µA
Note 1: Guaranteed by design, not production tested.
Note 2: Specifications to -40°C are guaranteed by design, not production tested.
www.maximintegrated.com
Maxim Integrated │ 8
(TA = +25°C, unless otherwise noted.)
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Typical Operating Characteristics
(Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.)
50
40
30
VOUT1 = 3.3V, IOUT1 = 2A
VOUT2 = 2.5V, IOUT2 = 1.5A
VOUT3 = 12V, IOUT3 = 50mA
20
10
7
8
60
VIN = 12V
50
40
VIN = 16V
30
3.27
3.26
0.1
0.6
1.1
1.6
2.1
2.6
3.1
3.6
3.25
4.1
VOUT3 vs. IOUT3
12.20
12.15
3.33
3.31
2.50
12.00
2.49
11.95
2.48
11.90
2.47
11.85
2.46
11.80
2.45
11.75
0.8
0.6
1.0
1.4
3.30
3.29
IOUT1 = 3A
3.27
VOUT1 = 3.3V AT 1A
VOUT2 = 2.5V AT 0.75A
0
5
3.26
3.25
10 15 20 25 30 35 40 45 50
7
8
9 10 11 12 13 14 15 16 17 18
VOUT1 = 3.3V AT 1A
VOUT2 = 2.5V AT 0.75A
12.30
12.25
12.20
IOUT3 = 0
12.15
12.10
12.05
12.00
2.47
11.95
2.46
11.90
9 10 11 12 13 14 15 16 17 18
VIN (V)
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11.85
IOUT3 = 50mA
7
8
9 10 11 12 13 14 15 16 17 18
VIN (V)
1.43
OSCILLATOR FREQUENCY (MHz)
12.35
MAX8513/14 toc08
OSCILLATOR FREQUENCY
vs. INPUT VOLTAGE
2.48
4.0
IOUT1 = 0
VOUT3 vs. VIN
2.49
8
3.5
VOUT2 vs. VIN
2.50
7
3.0
VIN (V)
IOUT2 = 1.5A
2.51
2.5
IOUT3 (mA)
IOUT2 = 0
2.52
1.2
2.0
3.28
VOUT3 (V)
2.53
1.5
IOUT2 (A)
VOUT1 = 3.3V AT 1A
VOUT3 = 12V AT 25mA
2.54
2.45
VOUT1 (V)
VOUT3 (V)
3.32
0.4
1.0
VOUT2 = 2.5V AT 0.75A
VOUT3 = 12V AT 25mA
3.34
12.05
0.2
0.5
VOUT1 vs. VIN
3.35
MAX8513/14 toc05
12.25
2.51
0
0
IOUT1 (A)
12.10
MAX8513/14 toc07
VOUT2 (V)
3.28
2.52
2.55
VOUT2 (V)
MAX8513/14 toc04
VOUT1 = 3.3V AT 1A
VOUT3 = 12V AT 25mA
2.53
3.29
IOUT1 (A)
VOUT2 vs. IOUT2
2.54
3.30
10
VIN (V)
2.55
3.31
20
0
9 10 11 12 13 14 15 16 17 18
3.32
MAX8513/14 toc06
60
3.33
VIN = 9V
70
MAX8513/14 toc03
80
VOUT2 = 2.5V AT 0.75A
VOUT3 = 12V AT 25mA
3.34
VOUT1 (V)
70
EFFICIENCY (%)
EFFICIENCY (%)
80
90
VOUT1 vs. IOUT1
3.35
MAX8513/14 toc02
90
0
100
MAX8513/14 toc01
100
EFFICIENCY vs. IOUT1
(IOUT2 = 0, IOUT3 = 0)
RFREQ = 10.7kΩ
1.42
1.41
TA = -40°C
TA = +25°C
MAX8513/14 toc09
EFFICIENCY vs. VIN
1.40
1.39
1.38
1.37
TA = +85°C
1.36
1.35
7
8
9 10 11 12 13 14 15 16 17 18
VIN (V)
Maxim Integrated │ 9
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Typical Operating Characteristics (continued)
(Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.)
OUTPUT1 LOAD-TRANSIENT RESPONSE
OUTPUT3 LOAD-TRANSIENT RESPONSE
MAX8513/14 toc10
50mV/div
MAX8513/14 toc11
IOUT2 = 0.75A, IOUT3 = 25mA
IOUT1 = 1A, IOUT2 = 0.75A
VOUT1
AC-COUPLED
50mV/div
VOUT2
AC-COUPLED
VOUT1
AC-COUPLED
VOUT2
AC-COUPLED
50mV/div
50mV/div
50mV/div
VOUT3
AC-COUPLED
VOUT3
AC-COUPLED
100mV/div
IOUT1
1A/div
0A
IOUT3
50mA/div
5mA
40µs/div
40µs/div
SWITCHING WAVEFORMS
(ALL OUTPUTS AT FULL LOAD)
SYNCHRONIZATION
MAX8513/14 toc12
MAX8513/14 toc13
VDH
10V/div
0V
VDL
5V/div
0V
VLX
10V/div
0V
VD2
(ANODE)
20V/div
0V
VDL
10V/div
0V
PFO RESPONSE
1µs/div
POR RESPONSE
MAX8513/14 toc14
PFO
2V/div
0V
VIN
5V/div
0V
VOUT1
2V/div
IOUT1 = 2A, IOUT2 = 1.5A, IOUT3 = 50mA
2ms/div
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SYNC/EN
5V/div
0V
200ns/div
0V
VDH
5V/div
0V
MAX8513/14 toc15
POR
5V/div
0V
VOUT1
2V/div
0V
0V
VOUT2
5V/div
0V
VOUT3
10V/div
100ms/div
Maxim Integrated │ 10
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Typical Operating Characteristics (continued)
(Circuit of MAX8513 evaluation kit, VIN = 12V, TA = +25°C, fS = 1.4MHz, unless otherwise noted.)
STAGGERED SEQUENCE (SEQ = GND)
TRACKING SEQUENCE (SEQ = VL)
MAX8513/14 toc16
MAX8513/14 toc17
SYNC/EN
5V/div
0V
SYNC/EN
5V/div
0V
VOUT3
5V/div
VOUT1
2V/div
VOUT2
2V/div
VOUT3
5V/div
VOUT1
2V/div
VOUT2
2V/div
0V
0V
2ms/div
4ms/div
OUTPUT1 SHORT CIRCUIT
(ALL OUTPUTS AT FULL LOAD)
OUTPUT1 SHORT CIRCUIT
(ALL OUTPUTS AT NO LOAD)
MAX8513/14 toc19
MAX8513/14 toc18
VOUT1
2V/div
VOUT1
2V/div
0V
0V
VLX
10V/div
VLX
10V/div
0V
0V
1L
2A/div
IL
2A/div
0A
0A
20µs/div
20µs/div
1.5
VIN = 12V
VOUT1 = 3.3V AT 2A
VOUT2 = 2.5V AT 1.5A
VOUT3 = 12V AT 50mA
1.3
1.1
NOISE (mV)
0.9
MAX8513/14 toc20
OUTPUT RIPPLE AND HARMONICS
(MEASURED AT OUT1)
0.7
0.5
0.3
0.1
-0.1
-0.3
-0.5
100
1100
2100
3100
4100
5100
FREQUENCY (kHz)
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Maxim Integrated │ 11
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Pin Description
PIN
NAME
MAX8513
MAX8514
PFI
1
1
Power-Fail Input. Connect PFI to an external resistive-divider between IN, PFI, and GND.
PFI senses VIN to detect voltage failure. Trip falling threshold at this input is 1.22V, with
20mV of hysteresis.
PFO
2
2
Power-Fail Output. Open-drain output that goes low if VPFI < 1.22V.
DH
3
3
OUT1 High-Side Gate-Drive Output. DH drives the high-side N-channel MOSFET (Q1 in the
Typical Applications Circuits). DH is a floating driver output that swings from LX to BST.
LX
4
4
OUT1 High-Side Driver Return Path. The high-side FET driver uses BST and LX for its
respective high and low-side supplies.
BST
5
5
OUT1 Boost Capacitor Connection for High-Side Gate Drive. Connect a 0.1µF ceramic
capacitor from BST to LX with a less than 5mm trace length.
DL
6
6
OUT1 Low-Side Gate-Drive Output. DL drives the low-side N-channel MOSFET (Q2 in the
Typical Applications Circuits). DL swings from 0 to VPVL.
PVL
7
7
OUT1 Gate-Drive Supply Bypass Connection. Connect PVL to VL through a 10Ω resistor
(R15), and bypass PVL to PGND with a minimum 1µF capacitor (C1).
PGND
8
8
Power-Ground Connection and Low-Side Supply for Dl Driver
VL
9
9
Internal +5V Linear-Regulator Bypass Pin. Bypass VL to GND with a minimum 2.2µF
ceramic capacitor (C10) and 5mm or less of trace length. VL should be connected to IN
when VIN < 5.5V.
COMP1
10
10
OUT1 Compensation Node. See the OUT1 Compensation section.
FB1
11
11
OUT1 Feedback Input. Connect a resistive-divider (R1, R2) from OUT1 to FB1 to GND to
regulate FB1 at 1.25V.
FUNCTION
FREQ
12
12
Oscillator Frequency-Set Input. A resistor from FREQ to GND sets the oscillator frequency
from 300kHz to 1.4MHz (f = 15MHz x kΩ / RFREQ). RFREQ is still required if an external
clock is used at SYNC/EN, and the SYNC/EN input frequency should be within ±30% of the
frequency set by RFREQ.
REF
13
13
1.25V Reference Output. Connect a 0.1µF or larger ceramic capacitor (C9) from REF to
GND.
GND
14
14
Analog/Signal Ground
FB2
15
15
OUT2 Feedback Input. Connect a resistive-divider (R5, R6) from OUT2 to FB2 to GND to
regulate FB2 to 0.8V.
DRV2
16
16
OUT2 Gate Drive. DRV2 connects to the gate of an external N-channel MOSFET to form a
positive linear voltage regulator.
SUP2
17
17
Supply Input for DRV2. Connect to a voltage source of at least 1V above the maximum
desired DRV2 gate voltage.
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Maxim Integrated │ 12
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Pin Description (continued)
PIN
NAME
MAX8513
MAX8514
SEQ
18
18
Connect to VL for output tracking. Connect to GND for output staggered sequence.
Staggered sequence ramps up VOUT2 and VOUT3 softly to avoid glitches on the previous
voltage due to charging of the LDO’s output capacitors.
FUNCTION
SYNC/EN
19
19
Shutdown Control and Synchronization Input. There are three operating modes:
• When SYNC/EN is low, the controller is off but the VL regulator is still running.
• When SYNC/EN is high, the controller is enabled with the switching frequency set by
RFREQ.
• When SYNC/EN is driven by an external clock, the controller is enabled and switches at
the external clock frequency.
N.C.
20
—
No Connection. Not internally connected. Connect to GND or leave floating.
SUP3N
—
20
OUT3N Base-Drive Supply. Connect SUP3N to any positive voltage between 1.5V and 5.5V
to provide power for the negative linear-regulator transistor driver.
DRV3P
21
—
OUT3P Base Drive. Connect DRV3P to the base of an external PNP pass transistor to form
a positive linear voltage regulator.
DRV3N
—
21
OUT3N Base Drive. Connect DRV3N to the base of an external NPN pass transistor to form
a negative linear voltage regulator.
IN
22
22
Main Voltage Input (4.5V to 28V). Bypass IN to GND, close to the IC, with a minimum 1µF
ceramic capacitor (C2). IN powers the linear regulator whose output is VL.
POR
23
23
Power-On Reset. Open-drain output that goes high after all outputs reach the regulation limit
and a 315ms delay time has elapsed.
FB3P
24
—
OUT3P Feedback Input. FB3P is referenced to 0.8V and connects to a resistive-divider
(R13, R14) to control a positive linear voltage regulator.
FB3N
—
24
OUT3N Feedback Input. Connect a resistive-divider (R13, R14) from OUT1 to FB3N to
OUT3N to regulate FB3N to 0V.
ILIM
25
25
ILIM Set Input. Connect a resistive-divider (R17, R18) from OUT1 to ILIM to GND. See the
Current Limit section.
CSP
26
26
Positive Current-Sense Input. Used to detect OUT1 current limit.
CSN
27
27
Negative Current-Sense Input. Used to detect OUT1 current limit.
28
Analog Soft-Start Control Input. This pin goes into the positive input of the VOUT1’s error
amplifier. When the MAX8513/MAX8514 are turned on, SS is at GND and charges up to
1.25V with a constant 25µA. Connect a capacitor (C13) from SS to GND for the desired
soft-start time.
SS
28
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Maxim Integrated │ 13
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
IN
SS
BST
SYNC/EN
S
Q
DH
R
Q
LX
PVL
VL
BIAS
1/7.5
DL
5µA
GND
PGND
CSP
FREQ
PWM
COMP.
SEQ
CSN
1VP-P
FB1
ERROR
AMP
PFI
COMP
1.25V
PFO
N
ILIM
SUP2
0.8V
POR
DRV2
GC2
N
FB2
0.8V
REF
REFERENCE
MAX8513
GC3P
N
DRV3P
N
FB3P
Figure 1. MAX8513 Functional Diagram
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Maxim Integrated │ 14
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
IN
SS
BST
SYNC/EN
S
Q
DH
R
Q
LX
PVL
VL
BIAS
DL
5µA
1/7.5
PGND
GND
CSP
FREQ
PWM
COMP.
SEQ
CSN
1VP-P
FB1
ERROR
AMP
PFI
COMP
1.25V
PFO
N
ILIM
SUP2
REFERENCE
0.8V
POR
DRV2
GC2
N
FB2
SUP3N
REF
GC3N
P
P
DRV3N
MAX8514
FB3N
Figure 2. MAX8514 Functional Diagram
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Maxim Integrated │ 15
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Detailed Description
The MAX8513/MAX8514 combine a step-down DC-DC
converter and two LDOs, providing three output voltages for xDSL modem and set-top box applications. The
switching frequency is set with an external resistor connected from the FREQ pin to GND, and is adjustable from
300kHz to 1.4MHz. The main step-down DC-DC controller operates in a voltage-mode, pulse-width-modulation
(PWM) control scheme. The MAX8513/MAX8514 include
two low-cost LDO controllers capable of delivering current
from the DC-DC main output, an extra winding, the input,
or from an alternate supply voltage. The first LDO controller drives an external NMOS or NPN with a maximum
drive of 7.75V. The second LDO controller provides either
a positive 0.8V to 27V output using an external PNP pass
device, or a negative -1V to -18V output with an external
NPN pass device.
DC-DC Controller
The MAX8513/MAX8514 step-down DC-DC converters
use a PWM voltage-mode control scheme. An internal
high-bandwidth (25MHz) operational amplifier is used
as an error amplifier to regulate the output voltage. The
output voltage is sensed and compared with an internal
1.25V reference to generate an error signal. The error
signal is then compared with a fixed-frequency ramp by
a PWM comparator to give the appropriate duty cycle to
maintain output-voltage regulation. At the rising edge of
the internal clock and when DL (the low-side MOSFET
gate drive) is at 0V, the high-side MOSFET turns on.
When the ramp voltage reaches the error-amplifier output
voltage, the high-side MOSFET latches off until the next
clock pulse. During the high-side MOSFET on-time, current flows from the input through the inductor to the output
capacitor and load. At the moment the high-side MOSFET
turns off, the energy stored in the inductor during the ontime is released to support the load. The inductor current
ramps down through the low-side MOSFET body diode.
After a fixed delay, the low-side MOSFET turns on to
shunt the current from its body diode for a lower voltage
drop to increase the efficiency. The low-side MOSFET
turns off at the rising edge of the next clock pulse, and
when its gate voltage discharges to zero, the high-side
MOSFET turns on after an additional fixed delay and
another cycle starts.
The MAX8513/MAX8514 operate in forced-PWM mode,
so even under light load the controller maintains a constant switching frequency to minimize noise and possible
interference with system circuitry.
www.maximintegrated.com
Current Limit
The MAX8513/MAX8514s’ switching regulator senses
the inductor current either through the DC resistance of
the inductor itself for lossless sensing, or through a series
resistor for more accurate sensing. When using the DC
resistance of the inductor, an RC filter circuit is needed
(see R19, R20, and C14 of the Typical Applications
Circuits and the Current-Limit Setting section). When
peak voltage across the sensing circuit (which occurs at
the peak of the inductor current) exceeds the current-limit
threshold set by ILIM, the controller turns off the highside MOSFET and turns on the low-side MOSFET. The
inductor current ramps down and DH turns on again if
the inductor current is below the current-limit threshold
at the next clock pulse. The MAX8513/MAX8514 currentlimit threshold can be set by two external resistors to be
proportional to the output voltage with an adjustable offset
level, providing foldback current-limit and short-circuit
protection. This feature greatly reduces power dissipation
and prevents overheating of external components during
an indefinite short-circuit at the output. See the Foldback
Current Limit section for how to set ILIM with external
resistors. The current-limit threshold defaults to 170mV
when ILIM is connected to VL, and in this case, the current limit functions as a constant current limit only. The
LDO controllers do not have current limit and rely on input
current limit for protection.
Synchronous-Rectifier Driver (DL)
Synchronous rectification reduces the conduction loss in
the rectifier by replacing the normal Schottky catch diode
with a low-on-resistance MOSFET switch. The MAX8513/
MAX8514 also use the synchronous rectifier to ensure
proper startup of the boost gate-drive circuit.
High-Side Gate-Drive Supply (BST)
A flying-capacitor boost circuit (see D1 and C3 in the
Typical Applications Circuits) generates the gate-drive
voltage for the high-side N-channel MOSFET. On startup,
the synchronous rectifier (low-side MOSFET, Q2) forces
LX to ground and charges the boost capacitor (C3) to
VVL - VDIODE. On the second half-cycle, the controller
turns on the high-side MOSFET by closing an internal
switch between BST and DH. This boosts the voltage
at BST to VVL - VDIODE + VIN, providing the necessary
gate-to-source voltage to turn on the high-side N-channel
MOSFET.
Maxim Integrated │ 16
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Internal 5V Linear Regulator
All MAX8513/MAX8514 functions (except for the positive
output LDO with an NFET or NPN, and the negative LDO
on the MAX8514) are powered from the on-chip low-dropout 5V regulator with its input connected to IN. Bypass the
regulator’s output (VL) with a 2.2µF or greater ceramic
capacitor. The VIN to VVL dropout voltage is typically
350mV, so when VIN is greater than 5.5V, VVL is typically
5V. If VIN is between 4.5V and 5.5V, short VL to IN.
Undervoltage Lockout
If VVL drops below 3.8V, the MAX8513/MAX8514 assume
that the supply voltage is too low to make valid decisions.
When this happens, the undervoltage lockout (UVLO)
circuitry inhibits switching, forces POR and PFO low,
and forces DL and DH gate drivers low. After VVL rises
above 3.9V, the controller powers up the outputs (see the
Startup section).
Startup
The MAX8513/MAX8514 start switching when VVL rises
above the 3.9V UVLO threshold. However, the controller
is not enabled unless all three of the following conditions
are met:
1) VVL exceeds the 3.9V UVLO threshold.
2) The internal reference exceeds 90% of its nominal
value.
3) The thermal limit is not exceeded.
Once the MAX8513/MAX8514 assert the internal enable
signal, the step-down controller starts switching and
enables soft-start. The soft-start circuitry gradually ramps
up to the reference voltage to control the rate-of-rise of
the step-down controller and reduce input surge currents.
The soft-start period is determined by the value of the
capacitor from SS to GND (C13 in the Typical Applications
Circuits). SS sources a constant 25µA to charge the softstart capacitor to 1.25V.
Output-Voltage Sequencing
The MAX8513/MAX8514 can power up in either staggered-output sequencing or output tracking. For staggered-output sequencing, connect SEQ to GND. In this
configuration, VOUT1 comes up first. When it reaches
90% of the nominal regulated value, VOUT2 is softly
turned on. Once VOUT2 reaches 90% of its nominal regulated value, VOUT3 is softly turned on. Individual soft-start
www.maximintegrated.com
on OUT2 and OUT3 eliminates glitches on the previous
stages due to the charging of output capacitors. See the
Typical Operating Characteristics section for the startup
and staggered-output-sequence waveforms.
Output-Voltage Tracking
When SEQ is connected to VL, all outputs rise up at the
same time and the external series pass transistors are
driven fully on until reaching the respective regulation
limits. Since the LDOs are powered from the main DC-DC
step-down converter, either directly or through a coupled
winding on the inductor, their outputs track the DC-DC
step-down output (OUT1). See the Typical Operating
Characteristics section for the startup output- tracking
waveforms.
Power-On Reset
The MAX8513/MAX8514 provide a power-on-reset (POR)
signal, which goes high 315ms after all outputs reach
90% of their nominal regulated value. Therefore, by the
time POR goes high, all outputs are already stabilized at
nominal regulated voltages. See the Typical Operating
Characteristics section for the POR waveforms.
Input Power-Fail (PFI and PFO)
The MAX8513/MAX8514 have a built-in comparator to
detect the input voltage with an external resistive- divider
at PFI, with a threshold of 1.22V. When the input voltage
drops and trips this comparator, the power-fail output
(PFO) goes low, while all outputs are still within regulation
limits. This is typically used for input power-fail warning
for orderly system shutdown. The amount of warning
time depends on the input storage capacitor, the input
PFI trip voltage level, the main step-down output voltage,
the total output power, and the efficiency. See the Design
Procedure section for how to calculate the input capacitor
to meet the required warning time.
Enable and Synchronization
The MAX8513/MAX8514 can be turned on with logic high,
and off with logic low at SYNC/EN. When SYNC/EN is
driven with an external clock, the internal oscillator synchronizes the rising edge of the clock at SYNC/EN to DH
going high. When being driven by a synchronization clock
signal at SYNC/EN, the controller synchronizes to the
external clock within two cycles. The frequency at SYNC/
EN needs to be within ±30% of the value set by RFREQ.
See the Switching-Frequency Setting section.
Maxim Integrated │ 17
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Thermal-Overload Protection
Thermal-overload protection limits the total power dissipation in the MAX8513/MAX8514. When the junction temperature exceeds TJ = +170°C, a thermal sensor shuts
down the device, forcing DL and DH low and allowing the
IC to cool. The thermal sensor turns the part on again
after the junction temperature cools by 25°C, resulting
in a pulsed output during continuous thermal-overload
conditions. During a thermal event, the main step-down
converter and the linear regulators are turned off, POR
and PFO go low, and soft-start is reset.
Design Procedure
OUT1 Voltage Setting
The output voltage is set by a resistive-divider network
from OUT1 to FB1 to GND (see R1 and R2 in the Typical
Applications Circuits). Select R2 between 5kΩ and 15kΩ.
Then R1 can be calculated by:
V
= R2 × OUT1 - 1
R1
1.25V
Input Power-Fail Setting
The PFI input can monitor VIN to determine if it is falling.
When the voltage at PFI crosses 1.22V, the output (PFO)
goes low. The input voltage value at the PFI trip threshold,
VPFI, is set by a resistive-divider network from IN to PFI to
GND (see the Typical Applications Circuits). Select R11,
the resistor from PFI to GND between 10kΩ and 40kΩ.
Then R10, the resistor from PFI to IN, is calculated by:
V
= R11× PFI - 1
R10
1.22V
Switching-Frequency Setting
The resistor connected from FREQ to GND, RFREQ (R7
in the Typical Applications Circuits), sets the switching
frequency, fS, as shown by the equation below:
15 × 10 9
=
fS
Hz × W
R FREQ
where RFREQ is in ohms.
Inductor Value
There are several parameters that must be examined
when determining which inductor to use: input voltage,
output voltage, load current, switching frequency, and LIR.
LIR is the ratio of peak-to-peak inductor ripple current to
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the maximum DC load current. A higher LIR value allows
for a smaller inductor but results in higher losses and
higher output ripple. A good compromise between size
and efficiency is a 30% LIR. Once all of the parameters
are chosen, the inductor value is determined as follows:
L=
VOUT1 × (VIN - VOUT1)
VIN × f S × I OUT1_MAX × LIR
where VOUT1 is the main switching regulator output and
fS is the switching frequency.
Choose a standard value close to the calculated value.
The exact inductor value is not critical and can be adjusted
to make tradeoffs between size, cost, and efficiency. Lower
inductor values minimize size and cost, but also increase
the output ripple and reduce the efficiency due to higher
peak currents. On the other hand, higher inductor values
increase efficiency, but eventually resistive losses due to
extra turns of wire exceed the benefit gained from lower
AC current levels. Find a low-loss inductor with the lowest
possible DC resistance that fits the allotted dimensions.
Ferrite cores are often the best choice, although powdered
iron is inexpensive and can work well up to 300kHz. The
chosen inductor’s saturation current rating must exceed
the peak inductor current as calculated below:
=
IPEAK I OUT1_MAX +
(VIN - VOUT1) × VOUT1
2 × L × f S × VIN
This peak value should be smaller than the value set at
ILIM when VOUT1 is at its nominal regulated voltage (see
the Current Limit and Current-Limit Setting sections).
In applications where a multiple winding inductor (coupled
inductor) is used to generate the supply voltages for the
LDOs, the inductance value calculated above is for the
winding connected to the DC-DC step-down (primary windings) inductance. The inductance seen from the other windings (secondary windings) is proportional to the square of
the turns ratio with respect to the primary winding.
The turns ratio is important since it sets the LDOs’ supply
voltage values. The voltage generated by the secondary
winding (VSEC) together with the rectifier diode and output capacitor is calculated as follows:
VSEC=
n
(VOUT1 + VQ2 ) × n2 - VD2
1
where VQ2 and VD2 are the voltage drops across the
low-side MOSFET on the primary side and the rectifier
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MAX8513/MAX8514
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diode on the secondary side (Q2 and D2 in the Typical
Applications Circuits). n2 and n1 are the number of
turns of the secondary winding and the primary winding,
respectively.
It is important to have the secondary winding tightly
coupled with the primary winding to minimize leakage
inductance for higher efficiency. The positive voltage generated by the secondary winding can also be stacked with
the main DC-DC step-down converter output to further
improve efficiency and reduce winding cost. In this case,
the secondary-side voltage:
VSEC=
n
1
VPFI and VDROOP can be calculated as:
Input Capacitor
The input-filter capacitor reduces peak currents drawn
from the power source and reduces noise and voltage ripple on the input caused by the AC-RMS current
through the ESR of the input capacitor (C2 in the Typical
Applications Circuits). The input capacitor must meet
the ripple-current requirement (IIN_RMS) imposed by the
switching currents defined by the following equation:
I OUT1 × VOUT1 × (VIN - VOUT1)
VIN
IIN_RMS has a maximum value when the input voltage
equals twice the output voltage (VIN = 2 x VOUT1), so
IIN_RMS(MAX) = IOUT1 / 2. Ceramic capacitors are recommended due to their low ESR and ESL at high frequency,
with relatively low cost. Choose a capacitor that exhibits
less than 10°C temperature rise at the maximum operating RMS current for optimum long-term reliability.
For applications that require input power-fail warning,
such as dying gasp, add a large-value electrolytic capacitor (CS) to the input as a local energy storage device to
provide the power to the converter in case of input powerfail. The capacitor value must be high enough to meet the
desired power-fail warning time, tWARN, where tWARN is
the time from when PFI trips the PFO output to when the
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POUT1 1
1
CS =
0.5 ×
×
V
V
η
PFI
DROOP
t WARN
×
(VPFI - VDROOP )
where POUT1 is the total output power, η is the total
converter efficiency, VPFI is the input voltage value at the
input power-fail (PFI) trip threshold, and VDROOP is the
input voltage value where VOUT1 starts dropping out of
regulation.
(VOUT1 + VQ2 ) × n2 +VOUT1 - VD2
IIN_RMS =
main output (OUT1) starts dropping out of regulation. The
value of the storage capacitor, CS, can be calculated as:
R10
VPFI
= 1.22V × 1 +
R11
where R10 and R11 are the resistive-dividers from IN to
PFI to GND in the Typical Applications Circuits.
VDROOP =
VOUT1
D MAX
where DMAX is the maximum duty cycle.
To ensure for worst-case component tolerances such
as capacitance of CS, converter efficiency, VPFI, and
VDROOP’s threshold over the operating temperature
range, it is recommended to select CS at least 1.5 times
the calculated value above.
Output Capacitor
The key selection parameters for the output capacitor
are the actual capacitance value, the equivalent series
resistance (ESR), the equivalent series inductance (ESL),
and the voltage-rating requirements. All of these affect
the overall stability, output ripple voltage, and transient
response.
The output ripple is composed of three components:
variations in the charge stored in the output capacitor,
the voltage drop across the capacitor’s equivalent series
resistance (ESR), and equivalent series inductance (ESL)
caused by the current into and out of the capacitor.
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MAX8513/MAX8514
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The peak-to-peak output voltage ripple as a consequence
of the ESR, ESL, and output capacitance is:
VRIPPLE(ESR)
= IP-P × R ESR
VRIPPLE(C) =
IP-P
8 × C OUT × f S
where COUT is C4 in the Typical Applications Circuits.
VIN × ESL
L1A + ESL
V -V
V
and IP-P = IN OUT1 OUT1
f
L
V
S
IN
VRIPPLE(ESL) =
where IP-P is the peak-to-peak inductor current (see the
Inductor Selection section). An approximation of the overall voltage ripple at the output is:
VRIPPLE =
VRIPPLE(C) + VRIPPLE(ESR) + VRIPPLE(ESL)
While these equations are suitable for initial capacitor
selection to meet the ripple requirement, final values may
also depend on the relationship between the LC doublepole frequency and the capacitor ESR zero. Generally,
the ESR zero is higher than the LC double pole (see the
Compensation Design section). Solid polymer electrolytic
or ceramic capacitors are recommended due to their low
ESR and ESL at higher frequencies. Higher output current
may require paralleling multiple capacitors to meet the
output voltage ripple.
The MAX8513/MAX8514s’ response to a load transient
depends on the selected output capacitor. After a load
transient, the output instantly changes by (ESR x ∆IOUT1)
+ (ESL x dIOUT1 / dt). Before the controller can respond,
the output deviates further depending on the inductor
and output capacitor values. After a short period of time
(see the Typical Operating Characteristics), the controller responds by regulating the output voltage back to its
nominal state. The controller response time depends on
the closed-loop bandwidth. With a higher bandwidth the
response time is faster, preventing the output capacitor
from further deviation from its regulating value. Be sure
not to exceed the capacitor’s voltage or current ratings.
MOSFET Selection
The MAX8513/MAX8514 drive two external, logic-level,
N-channel MOSFETs as the circuit switch elements. The
key selection parameters are:
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• For on-resistance (RDS_ON), the lower the better.
• Maximum drain-to-source voltage (VDS) should be at
least 20% higher than the input supply rail at the highside MOSFET’s drain.
• For gate charges (QGS, QGD, QDS), the lower the
better.
Choose the MOSFETs with rated RDS_ON at VGS =
4.5V. For a good compromise between efficiency and
cost, choose the high-side MOSFET (Q1 in the Typical
Applications Circuits) that has conduction loss equal to
switching loss at nominal input voltage and maximum
output current. For the low-side MOSFET (Q2 in the
Typical Applications Circuits), make sure that it does not
spuriously turn on due to dV/dt caused by Q1 turning on
as this results in shoot-through current degrading the
efficiency. MOSFETs with a lower QGD / QGS ratio have
higher immunity to dV/dt.
For proper thermal management, the power dissipation
must be calculated at the desired maximum operating
junction temperature, maximum output current, and worstcase input voltage. For Q2, the worst case is at VIN_MAX.
For Q1, it could be either at VIN_MIN or VIN_MAX. Q1
and Q2 have different loss components due to the circuit
operation. Q2 operates as a zero voltage switch, where
major losses are the channel conduction loss (PQ2CC)
and the body-diode conduction loss (PQ2DC).
V
PQ2CC
= 1 - OUT1 × I
× R DS_ON
OUT12
V
IN
PQ2DC =
2 × I OUT1 × VF × t dt × f S
where VF is the body-diode forward voltage drop, tdt =
50ns is the dead time between Q1 and Q2 switching transitions, and fS is the switching frequency.
The total losses for Q2 are:
PQ2_TOTAL
= PQ2CC + PQ2DC
Q1 operates as a duty-cycle control switch and has the
following major losses: the channel conduction loss
(PQ1CC), the V I overlapping switching loss (PQ1SW), and
the drive loss (PQ1DR). Q1 does not have body-diode conduction loss because the diode never conducts current.
PQ1CC =
VOUT1
×I
× R DS_ON
OUT12
VIN
where RDS_ON is at the maximum operating junction
tempeure.
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PQ1SW = VIN × I OUT1 × f S ×
1) Connect a scope probe to measure VLX to GND, and
observe the ringing frequency, fR.
(Q GS + Q GD )
I GATE
where IGATE is the average DH high driver output-current
capability determined by:
I GATE =
2.5V
(R DH + R GATE )
where RDH is the high-side MOSFET driver’s on-resistance (1.5Ω typ) and RGATE is the internal gate resistance
of the MOSFET (≈2Ω).
PQ1DR= Q GS × VGS × f S ×
R GATE
(R GATE + R DH
)
where VGS ≈ VVL = 5V.
The total power loss in Q1 is:
PQ1 =PQ1CC + PQ1SW + PQ1DR
In addition to the losses above, allow approximately 20%
more for additional losses due to MOSFET output capacitances and Q2 body-diode reverse recovery charge dissipated in Q1. This is not typically well-defined in MOSFET
data sheets. Refer to the MOSFET data sheet for the
thermal-resistance specification to calculate the PC board
area needed to maintain the desired maximum operating
junction temperature with the above calculated power
dissipations.
To reduce EMI caused by switching noise, add a 0.1µF
or larger ceramic capacitor from the high-side MOSFET
drain to the low-side MOSFET source or add resistors in
series with DH and DL to slow down the switching transitions. However, adding series resistors with DH and DL
increases the power dissipation in the MOSFET when it
switches, so be sure this does not overheat the MOSFET.
The minimum load current must exceed the high-side
MOSFET’s maximum leakage current over temperature if
fault conditions are expected.
MOSFET Snubber Circuit
Fast switching transitions cause ringing because of resonating circuit parasitic inductance and capacitance at the
switching nodes. This high-frequency ringing occurs at
LX’s rising and falling transitions and can interfere with
circuit performance and generate EMI. To dampen this
ringing, a series-RC snubber circuit is added across each
switch. The following is the procedure for selecting the
value of the series-RC circuit:
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2) Find the capacitor value (connected from LX to GND)
that reduces the ringing frequency by half.
The circuit parasitic capacitance (CPAR) at LX is then
equal to 1/3rd the value of the added capacitance above.
The circuit parasitic inductance (LPAR) is calculated by:
L PAR =
1
(2π × fR ) 2 × C PAR
The resistor for critical dampening (RSNUB) is equal to
(2π x fR x LPAR). Adjust the resistor value up or down to
tailor the desired damping and the peak voltage excursion. The capacitor (CSNUB) should be at least 2 to 4
times the value of the CPAR to be effective. The power
loss of the snubber circuit is dissipated in the resistor
(PRSNUB) and can be calculated as:
2
PRSNUB = C SNUB × (VIN ) × f S
where VIN is the input voltage and fS is the switching
frequency. Choose an RSNUB power rating that meets
the specific application’s derating rule for the power dissipation calculated.
Current-Limit Setting
The MAX8513/MAX8514 can provide foldback current limit
or constant current limit. Unless constant current-limit operation is required, such as when driving a constant current
load, foldback current limit should be implemented. Foldback
current limit reduces the power dissipation of external components under overload or short-circuit conditions.
Foldback Current Limit
For foldback current limit, the current-limit threshold
is set by an external resistive-divider from VOUT1 to
ILIM to GND (R17 and R18 of the Typical Applications
Circuits). This makes the voltage at ILIM a function of
the internal 5µA current source and VOUT1. The currentlimit comparator threshold is equal to VILIM / 7.5. This
threshold is compared with VSENSE. VSENSE is either
the voltage across the current-sense resistor or, for
lossless sensing, the voltage across the inductor. When
VSENSE exceeds the current-limit threshold, the high-side
MOSFET turns off and the low-side MOSFET turns on.
This allows for a current foldback feature that reduces the
current-limit threshold during a short circuit. This makes
the current threshold limit, when VOUT = 0V, a percentage of the current-limit threshold, when VOUT1 is at its
nominal regulated value.
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MAX8513/MAX8514
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To set the current limit and the current-limit foldback
thresholds, first select the foldback current-limit ratio
(PFB). This ratio is the foldback current limit (ILIMIT@0V)
divided by the current limit when VOUT1 equals its nominal regulated voltage ILIMIT).
PFB =
ILIMIT@0V
ILIMIT
PFB is typically set to 0.5. To calculate the values of R17
and R18 (in the Typical Applications Circuits), use the following equations:
(P × VOUT1)
R17 = FB
4.7µA × (1-PFB )
R18 =
(7.5 × R CS_MAX × ILIMIT × (1-PFB )) × R17
VOUT1-(7.5 × R CS_MAX × ILIMIT × (1-PFB ))
RCS_MAX is the maximum sensing resistance at the
high operating temperature. RCS can either be the series
resistance of the inductor or a discrete current-sense
resistor value. ILIMIT is the peak inductor current at maximum load, which equals:
1+ LIR
I OUT1_MAX ×
2
If R18 results in a negative resistance, then decrease
RCS. This can be done by choosing an inductor with a
lower DC resistance or a lower value discrete currentsense resistor.
Constant Current Limit
For constant current-limit operation, connect ILIM to VL
for a default current-limit threshold of 170mV (typ). The
sensing resistor value must then be chosen so that:
RCS_MAX x ILIMIT < 151mV
the minimum value of the default threshold.
Alternately, the constant current-limit threshold can also
be set by using only R18, in which case R18 is calculated
as follows:
I
R18 =
7.5 × R CS_MAX × LIMIT
4.7µA
of the Typical Applications Circuits). Pick the value of the
filter capacitor, C14, from 0.22µF to 1µF (ceramic X7R).
Then calculate the value of R19 as follows:
R19 =
L1A
(
)
2 × R L_DC × C14
RL_DC is the nominal value of the inductor’s DC resistance. Additionally, R20 (in the Typical Applications
Circuits) is added in series with the CSN input to cancel
the drop due to input bias current into CSP that develops
across R19. R20 should be set equal to R19.
Compensation Design
The MAX8513/MAX8514 use a voltage-mode control
scheme that regulates the output voltage by comparing the
error-amplifier output (COMP) with a fixed internal ramp to
produce the required duty cycle. The output lowpass LC
filter creates a double pole at the resonant frequency,
which has a gain drop of -40dB/decade and a phase shift
of approximately -180°/decade. The error amplifier must
compensate for this gain drop and phase shift to achieve
a stable high-bandwidth closed-loop system.
The basic regulator loop consists of a power modulator, an
output feedback divider, and an error amplifier. The power
modulator has a DC gain set by VIN / VRAMP (VRAMP =
1V pk-pk), with a double pole and a single zero set by the
output inductance (L), the output capacitance (COUT) (C4
in the Typical Applications Circuits), and its equivalent
series resistance (RESR). VRAMP is the peak of the sawtoothed waveform at the input of the PWM comparator
(see the Functional Diagrams in Figures 1 and 2). Below
are equations that define the power modulator:
G MOD(DC) =
f PMOD =
VIN
VRAMP
1
2π L × C OUT
where L is L1A and COUT is C4 in the Typical Application
circuits.
f ZESR =
1
2π × C OUT × R ESR
When using the DC resistance of the inductor as a current-sense resistor, an RC filter is needed (R19 and C14
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MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
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When the output capacitance is comprised of paralleling n
number of identical capacitors whose values are CEACH
with ESR of RESR_EACH, then:
C OUT= n × C EACH and
R ESR =
R ESR_EACH
decade slope of the LC double pole, and the resultant
compensated loop crosses over at the desired -20dB/
decade slope. The error amplifier has a dominant pole
at very low frequency (≈0Hz), and two separate zeros at:
=
f Z1
n
1
1
=
and f Z2
2π × R3 × C5
2π × (R1 + R4) × C11
and poles at:
Thus the resulting fZESR is the same as that of each
capacitor.
1
1
=
f P2 =
and f P3
C5 × C12
2π × R4 × C11
The crossover frequency (fC), which is the frequency
2π × R3 ×
when the closed-loop gain is equal to unity, should be the
C5 + C12
smaller of 1/5th the switching frequency or 100kHz (see
The error-amplifier equivalent circuit and its gain vs. frethe Switching-Frequency Setting section):
quency plot are shown below in Figure 3.
f
f C ≤ S or 100kHz
5
The loop-gain equation at the crossover frequency is:
In this case, fZ2 and fP1 are selected to have the converters’ closed-loop crossover frequency, fC, occur when the
error-amplifier gain has a +20dB/decade slope between
fZ2 and fP2. The error-amplifier gain at fC is:
G EA(fc)G MOD(fc) = 1
G EA(fc) =
where GEA(fc) is the error-amplifier gain at fC, and
GMOD(fc) is the power modular gain at fC.
The loop compensation is affected by the choice of
output-filter capacitor used, due to the position of its ESR
zero frequency with respect to the desired closed-loop
crossover frequency. Ceramic capacitors are used for
higher switching frequencies (above 750kHz) because
of low capacitance and low ESR; therefore, the ESR
zero frequency is higher than the closed-loop crossover
frequency. While electrolytic capacitors (e.g., tantalum,
solid polymer, oscon, etc.) are needed for lower switching
frequencies, because of high capacitance and ESR, the
ESR zero frequency is typically lower than the closedloop crossover frequency. Thus the compensation design
procedure is separated into two cases:
Case 1: Ceramic Output Capacitor (operating
at high switching frequencies, fZESR > fC)
The modulator gain fC is:
f
G MOD(fc) = G MOD(DC) PMOD
fC
G MOD(fc)
The gain of the error amplifier between fZ1 and fZ2 is:
f Z2
f Z2
G=
EA(fZ1-fZ2) G=
EA(fc)
f C f CG MOD(fc)
C12
C11
C5
R3
R4
VOUT1
R1
GAIN
(dB)
EA
R2
COMP
REF
CLOSED-LOOP GAIN
EA GAIN
2
Since the crossover frequency is lower than the output
capacitors’ ESR zero frequency and higher than the LC
double-pole frequency, the error-amplifier gain must have
a +20dB/decade slope at fC. This +20dB/decade slope of
the error amplifier at crossover then adds to the -40dB/
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1
fZ1
fZ2
fC
fP2
fP3
FREQUENCY
Figure 3. Case 1: Error-Amplifier Compensation Circuit (ClosedLoop and Error-Amplifier Gain Plot)
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MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
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This gain is also set by the ratio of R3/R1 where R1 is
calculated in the OUT1 Voltage Setting section. Thus:
R3 =
R1× f Z2
f C × G MOD(fc)
Due to the underdamped (Q > 1) nature of the output LC
double pole, the error-amplifier zero frequencies must be
set less than the LC double-pole frequency to provide
adequate phase boost. Set the error-amplifier first zero,
fZ1, at 1/4th the LC double-pole frequency and the second
zero, fZ2, at the LC double-pole frequency. Hence:
C5 =
2
π × R3 × f PMOD
Set the error-amplifier fP2 at fZESR, and fP3 to 1/2 the
switching frequency, if fZESR < 1/2 fS. If fZESR > 1/2 fS,
then set fP2 at 1/2 fS and fP3 at fZESR.
The gain of the error amplifier between fP2 and fP3 is set
by the ratio of R3/RI and equal to:
f
R3
= G EA(fZ1-fZ2) P2
RI
f PMOD
where RI is the parallel combination of R1 and R4 and is
equal to:
R1× R4
RI =
R1 + R4
Therefore:
RI =
R3 × f PMOD
and
f P2 × G EA(fZ1-fZ2)
R1× R I
R4 =
R1 - R I
C11 can then be calculated as:
1
C11 =
2π × R4 × f P2
and C12 as:
C12 =
C5
(2π × C5 × R3 × fP3 -1)
Below is a numerical example to calculate the error-amplifier compensation values used in the Typical Applications
Circuit of Figure 5:
VIN = 12V (nomimal input voltage)
VRAMP = 1V
VOUT1 = 3.3V
VFB1 = 1.25V
L1A = 1.8µH
C4 = 47µF/ 6.3V ceramic, with RESR = 0.008Ω
fS = 1.4MHz
The LC double-pole frequency is calculated as:
=
f PMOD
1
=
2π L1A × C4
1
2π 1.8 × 10 -6 × 47 × 10 -6
= 17.3kHz
1
=
2π × R ESR × C4
=
f ZESR
1
2π × 0.008 × 47 × 10 -6
= 423kHz
Pick R2 = 8.06kΩ.
3.3V
=
R1 8.06kW ×
=
-1 13.3kW
1.25V
The modulator gain at DC is:
G MOD(DC)
=
VIN
=
12
VRAMP
Pick fC = 100kHz.
2
17.4kHz
G MOD(fc) =
12 ×
0.363
=
100kHz
f PMOD
G EA(fZ1− fZ2) =
f CG MOD(fC)
17.4kHz
= 0.479
100kHz × 0.363
R3
= R1× G EA(fZ1− fZ2)
=
= 13.3kW × 0.479
= 6.37kW
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MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
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Use 6.8kΩ.
C12
2
2
=
C5 =
= 5.38nF
π × R3 × f PMOD π × 6.8kW × 17.4kHz
Use 4.7nF.
=
RI
C11
C5
R3
R4
VOUT1
R1
R3 × f PMOD
6.8kW × 17.4kHz
=
= 583W
f P2 × G EA(fZ1-fZ2) 423kHz × 0.479
R4
=
R1× R I 13.3kW × 583W
=
= 609W
R1 - R I 13.3kW - 583W
EA
R2
GAIN
(dB)
VCOMP
VREF
CLOSED-LOOP GAIN
Use 620Ω.
EA GAIN
1
1
=
C11 =
= 607pF
2π × R4 × f P2 2π × 620W × 423kHz
Use 680pF.
Pick fP3 = 700kHz, which is the midpoint between fZESR
and 1/2 the switching frequency.
C12 =
C5
(2π × C5 × R3 × f P3 )-1
4.7nF
= 33.7pF
(2π × 4.7nF × 6.8kW × 700kHz)-1
Use 33pF.
Case 2: Electrolytic Output Capacitor (operating at lower switching frequencies, fZESR < fC )
The modulator gain at fC is:
2
f
G MOD(fc) = G MOD(DC) PMOD
f ZESR f C
The output capacitor’s ESR zero frequency is higher than
the LC double-pole frequency but lower than the closedloop crossover frequency. Here the modulator already has
a -20dB/decade slope; therefore, the error-amplifier gain
must have a 0dB/decade slope at fC, so the loop crosses
over at the desired -20dB/decade slope. The error-amplifier circuit configuration is the same as Case 1; however,
the closed-loop crossover frequency is now between fP2
and fP3, as illustrated in Figure 4.
www.maximintegrated.com
fZ1
fZ2
fP2
fC
fP3
FREQUENCY
Figure 4. Case 2: Error-Amplifier Compensation Circuit
(Closed-Loop and Error-Amplifier Gain Plot)
The equations that define the error amplifier’s poles and
zeroes (fZ1, fZ2, fP2, and fP3) are the same as for Case 1.
However, fP2 is now lower than the closed-loop crossover
frequency.
The error-amplifier gain at fC is:
G EA(fc) =
1
G MOD(fc)
And the gain of the error amplifier between fZ1 and fZ2 is:
f Z2
f Z2
G EA(fZ1
=
=
− fZ2) G
EA(fc)
f P2 f P2G MOD(fc)
Due to the underdamped (Q > 1) nature of the output LC
double pole, the error-amplifier zero frequencies must be
set less than the LC double-pole frequency to provide
adequate phase boost. Set the first zero of the error
amplifier, fZ1, at 1/4th the LC double-pole frequency. Set
the second zero, fZ2, at the LC double-pole frequency. Set
the second pole, fP2, at fZESR.
Maxim Integrated │ 25
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
This gain between fZ1 and fZ2 is also set by the ratio of
R3/R1, where R1 is selected in the OUT1 Voltage Setting
section Therefore:
f PMOD =
=
R1× f PMOD
R3 =
f ZESR × G MOD(fc)
f ZESR =
And similar to Case 1, C5 can be calculated as:
=
2
C5 =
π × R3 × f PMOD
Set the error-amplifier third pole, fP3, at approximately 1/2
the switching frequency. The gain of the error amplifier at
fC (between fP2 and fP3) is set by the ratio of R3/RI and
is also equal to:
G EA(fc) =
1
G MOD(fc)
Therefore:
Similar to Case 1, R4, C11, and C12 can be calculated as:
C12 =
R1× R I
R1 - R I
1
2π × R4 × f ZESR
Pick R2 = 8.06kΩ. Then:
3.3V
=
-1 13.3kW
1.25V
VIN
= =
G MOD(DC)
12
VRAMP
=
R1 8.06kW ×
2.7kHz
= 1.543
18.95kHz × 0.0923
R3= R1× G EA(fZ1-fZ2)= 13.3kW × 1.543= 20.48kW
=
C5
2
2
=
= 11.8nF
π × R3 × f PMOD π × 20kW × 2.7kHz
Use 12nF.
Below is a numerical example to calculate the erroramplifier compensation values for Case 2:
VIN = 12V (nomimal input voltage)
VRAMP = 1V
VFB1 = 1.25V
1
= 18.95kHz
2π × 0.015W× 560µF
Use 20kΩ.
C5
2π × C5 × R3 × f P3 -1
VOUT1 = 3.3V
1
2πR ESR × C4
=
RI =
R3 × G MOD(fc) × G D
C11 =
1
= 2.7kHz
2π 6.2µH× 560µF
2.7kHz 2
G MOD(DC) =
12 ×
0.0923
=
18.95kHz × 50kHz
f PMOD
G EA(fZ1− fZ2) =
f ZESRG MOD(fc)
R1× R4
R1 + R4
R4 =
2π L1A × C4
Pick fC = 50kHz, which is less than fS / 5.
Where RI is:
RI =
1
R=
= 20kW × 0.0923
= 1.846kW
I R3 × G MOD(fc)
=
R4
R1× R I 13.3kW × 1.846kW
=
= 2.14kW
R1-R I
13.3kW-1.846kW
Use 2.2kΩ.
=
C11
L1A = 6.2µH
1
1
=
= 3.82nF
2π × R4 × f ZESR 2π × 2.2kW × 18.95kHz
C4 = 560µF/ 10V OS-Con capacitor, with ESR = 0.015Ω
Use 3.9nF.
fS = 300kHz
Pick fP3 = fS / 2= 150kHz.
www.maximintegrated.com
Maxim Integrated │ 26
MAX8513/MAX8514
C12 =
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
C5
(2π × C5 × R3 × f P3 )-1
12nF
= 53.3pF
2π × 12nF × 20kW × 150kHz-1
Use 47pF.
Linear-Regulator Controllers
OUT2 Voltage Selection
The MAX8513/MAX8514 OUT2 positive linear regulator’s output voltage is set by connecting a resistivedivider from OUT2 to FB2 to GND. The resistors in the
divider are selected to set the minimum output current (IOUT2_MIN). For the Typical Applications Circuit
(Figure 5 or Figure 6), the feedback resistors are set
to R5 = 340Ω and R6 = 160Ω, where R5 is the resistor
from OUT2 to FB2 and R6 is the resistor from FB2 to
GND. These values set the minimum output current to
≈4.5mA, which works well with many MOSFETS.
In general,
I OUT2_MIN =
I OUT2_MAX
333
Select R5 and R6 such that:
0.8V
= I OUT2_MIN
R6
V
= R6 × OUT2 -1
R5
0.8V
OUT2 Stability
A transconductance amplifier drives the gate of the
NMOS transistor (Q3 in the Typical Applications Circuits),
with current proportional to the error signal multiplied by
the amplifier’s transconductance. The error signal is the
difference between VFB2 and the internal 0.8V reference.
VSUP2, the supply voltage for the transconductance
amplifier, must be at least 1V greater than the maximum
required gate voltage (VDRV2). The output pass transistor (Q3) buffers the DRV2 signal to produce the desired
output voltage (VOUT2). The output capacitor (C6 in the
Typical Applications Circuits) helps bypass the output,
while the feedback resistors (R5 and R6) set the outputvoltage reference point as well as the minimum load.
www.maximintegrated.com
The loop gain for the positive LDO output using an NMOS
transistor is:
0.8V
×
VOUT2
G C2 (1 + sCA × RA )
sC OUT2
s(CA + Cq)1 +
(1 + sRA × Cq)
gC
where COUT2 is C6 in the Typical Applications Circuits.
GC2 is the transconductance of the internal amplifier
(0.21S typ), and a dominant pole at a low frequency is
created from this transconductance and the compensation capacitor (CA in the Typical Applications Circuits +
Q3’s gate capacitance (Cq)). A second pole occurs due to
COUT2 and the transconductance of Q3 (gC). This transconductance varies from a minimum gC(MIN) occurring at
minimum load to a maximum gC(MAX) occurring at maximum load. To calculate the gC at any load current, the
typical forward transconductance can be extracted from
the MOSFET’s data sheet (gfs), as well as the current at
which it is measured (IDfs). The gC(MIN) and gC(MAX) can
be calculated as:
g C(MAX) = gfs
g C(MIN) = gfs
I OUT2(MAX)
IDfs
I OUT2(MIN)
IDfs
Poles occur at:
f PMAX =
g C(MAX)
2π × C OUT2
and f PMIN =
g C(MIN)
2π × C OUT2
If only a minimum gfs is given, initially assume the maximum is twice the minimum.
When using a bipolar transistor, the gC(MAX) and gC(MIN)
occur ahe following:
I
g C(MIN) = OUT2MIN
VT
I
g C(MAX) = OUT2MAX
VT
where VT is the thermal voltage, 26mV.
Maxim Integrated │ 27
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
A third pole occurs due to the input capacitance of the
NMOS transistor’s gate, Cq (Ciss from the MOSFET data
sheet), and the compensation resistor (RA). If an NPN
bipolar transistor is used instead, this third pole can be
calculated from the base capacitance (Cq = CIBO from the
NPN data sheet). To ensure stability, a zero is added to
the loop from the resistor (RA) and capacitor (CA).
For good stability and transient response, first pick COUT2
at approximately 6.8µF/A of load current. For the Typical
Applications Circuit, COUT2 is a 10µF ceramic capacitor.
Ensure that the zero formed from the ESR of COUT2 is
greater than the maximum bandwidth BWMAX (calculated
below). The maximum bandwidth should also be less than
the pole created by Q3’s gate capacitance (Cq) and the
compensation resistor (RA).
1
1
1.3 × 2π × C R ,
G C
BWMAX = MIN
1
1
×
10 2π × R ESR_COUT2C OUT
The following equations set the compensation zero a
decade and a half below the maximum load pole and
ensure the above constraint is met. Choose the larger of
the two values for CA.
8 × VOUT × C OUT × C q × G C2 × g C(MAX) ×
g C(MAX) × R ESR_COUT2 + 1
13 ×
,
g C(MAX)VOUT2 + I OUT2(MAX)
C A = MAX
G C2 × g C(MAX)
×
16 10 × g
C(MAX)VOUT2 + I OUT2(MAX)
R
ESR_COUT2C OUT − C q
(
)
(
)
V
C
RA =
10 10 × OUT2 OUT2 ×
CA
(g C(MAX) × R ESR_COUT2 + 1)
(g C(MAX)VOUT2 + I OUT2(MAX) )
MOSFET Transistor Selection
MAX8513/MAX8514s’ OUT2 uses N-channel MOSFETs
as the series pass transistor to improve efficiency for
high output current by not requiring a large amount of
www.maximintegrated.com
drive current. The selected MOSFET must have the gate
threshold voltage meet the following criteria:
VGS_MAX ≤ VDRV2 -VOUT2
where VDRV2 is equal to 7.75V or VSUP2 - 1.5V (whichever is less), and VGSMAX is the maximum gate voltage
required to yield the on-resistance specified by the manufacturer’s data sheet. Logic-gate MOSFETs are recommended.
NPN-Transistor Selection
The MAX8513/MAX8514s’ OUT2 can use a less expensive NPN transistor as the series pass transistor. In
selecting the appropriate NPN transistor, make sure the
beta is large enough so the regulator can provide enough
base current. The minimum beta of the transistor is:
I OUT2(MAX)
β (MIN) =
4mA
In addition, to avoid premature dropout, VCE_SAT ≤
VIN_MIN - VOUT2.
OUT3_ Transistor Selection
The pass transistors must meet specifications for current
gain (β), input capacitance, collector-emitter saturation
voltage, and power dissipation. The transistor’s current
gain limits the guaranteed maximum output current to:
V
=
I OUT3P IDRV3P_MIN -- BE β
R12
where IDRV3P_MIN is the minimum base-drive current
and R12 is the pullup resistor connected between the
transistor’s base and emitter (see the Typical Applications
Circuits). In addition, to avoid premature dropout VCE_SAT
≤ VIN_MIN - VOUT3. Furthermore, the transistor’s current
gain increases the linear regulator’s DC loop gain (see
the Stability Requirements section), so excessive gain
destabilizes the output. Therefore, transistors with current
gain over 100 at the maximum output current, such as
Darlington transistors, are not recommended. The transistor’s input capacitance and input resistance also create a
second pole, which could be low enough to destabilize the
LDO when the output is heavily loaded.
The transistor’s saturation voltage at the maximum output
current determines the minimum input-to-output voltage
differential that the linear regulator supports. Alternately,
Maxim Integrated │ 28
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
the package’s power dissipation could limit the useable
maximum input-to-output voltage differential.
The maximum power-dissipation capability of the transistor’s package and mounting must allow the actual power
dissipation in the device without exceeding the maximum
junction temperature. The power dissipated equals the
maximum load current multiplied by the maximum inputto-output voltage differential.
When the MAX8513/MAX8514 are disabled, R26 discharges C7.
OUT3P Voltage Selection (PNP)
The MAX8513 positive linear-regulator output voltage,
VOUT3P, is set with a resistive-divider from OUT3P to
FB3P to GND. First, select R14 resistance value (below
1kΩ. Then, solve for R13 such that:
V
R13 = R14 OUT3P -1
0.8V
where VOUT3P can range from +0.8V to +27V.
OUT3N Voltage Selection (NPN)
The MAX8514’s negative linear-regulator output voltage, VOUT3N, is a negative regulated voltage developed through the pass transistor Q4 (MAX8514 Typical
Applications Circuits). A resistive-divider from OUT3N
to FB3N to VREF3N forces VFB3N to regulate to 0V.
Calculate VOUT3N by first selecting R14 the resistor from
VREF3N to FB3N to be below 5kΩ, where VREF3N is any
positive voltage (usually VOUT1)13 is then calculated by:
=
R13
-VOUT3N
× R14
VREF3N
tance amplifier is used to drive the external pass transistors. The transconductance amplifier, pass transistor’s
specifications, the base-emitter resistor, and the output
capacitor determine the loop stability.
The total DC loop gain (AV) is the product of the gains
of the internal transconductance amplifier, the gain from
base to collector of the pass transistor (Q4 in the Typical
Applications Circuits), and the gain of the feedback divider.
The transconductance amplifier regulates the output voltage by controlling the pass transistor’s base current. Its
DC gain is approximately:
G C3_ × R IN || R12
where GC3_ is typically 0.6S (OUT3P) and 0.36S
(OUT3N), RIN is the input resistance o4, and can be
calculated by:
26mV
=
β
R IN
I OUT3_
The DC gain for the transistor (Q4), including the feedback divider, is approximately:
V
A Q4P = REF for OUT3P or
VT
VOUT3N × VREF3N
A Q4N =
(VREF3N -VOUT3N) × VT
VT is the thermal voltage for the transistor (typically 26mV
at TA = +27°C). The tl DC loop gain for OUT3_ is:
(
)
AV =
G C3_ × R IN || R12 × A Q4_
A dominant pole (fPOLE1) is created from the output
SUP3N is the supply input for OUT3N’s transconductance
capacitance and load resistance:
amplifier. When OUT3N is used, SUP3N must be conI OUT3_MAX
nected to a voltage supply between 1.5V and 5.5V that
1
=
f POLE1 =
can source at least 25mA. Typically, VOUT1 can be used
2π × C OUT3 × R OUT3 2π × C OUT3 × VOUT3_
as the supply input for SUP3N.
Unity-gain crossover (fC_OUT3_) should occur at:
Stability Requirements
The MAX8513/MAX8514s’ DRV3P and DRV3N outputs
are designed to drive bipolar transistors (PNP types for
the MAX8513 with the DRV3P output, and NPN types
for the MAX8514 with the DRV3N output). These bipolar
transistors form linear regulators with positive outputs
(MAX8513 from 0.8V to 27V) and negative outputs
(MAX8514 from -18V to -1V). An internal transconduc-
www.maximintegrated.com
f C_OUT3_
= A V × f POLE1
A second pole is set by the input capacitance to the base
of Q4 (CQ4IN), any external base-to-emitter capacitance
(CBE, see the Base-Drive Noise Reduction section and
Figure 7), the transistor’s input resistance (RIN), and the
base-toitter pullup resistor (R12):
Maxim Integrated │ 29
MAX8513/MAX8514
f POLE2 =
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
1
2π(C BE+ C Q4IN ) × R IN || R12
If the second pole occurs well after unity-gain crossover,
the linear regulator remains stable. If not, then increase
the output capacitance COUT3 (C8 in the Typical
Applications Circuits) so that:
f POLE2 > 2 × f C_OUT3_
If high-ESR capacitors are used for the output capacitor
(COUT3), then cancel the ESR zero with a pole at FB3_.
This is accomplished by adding a capaci (CFB3_) from
FB3_ to GND so that:
C FB3_ =
1
2π × R3 || R4 × f ESR
OUT3_ Output Capacitors
Connect at least a 1µF capacitor between the linear
regulator’s output and ground, as close to the MAX8513/
MAX8514 and the external pass transistors as possible.
Depending on the selected pass transistor, larger capacitor values may be required for stability (see the Stability
Requirements section). Once the minimum capacitor
value for stability is determined, verify that the linear regulator’s output does not contain excessive noise. Although
adequate for stability, small capacitor values can provide
too much bandwidth, making the linear regulator sensitive
to noise. Larger capacitor values reduce the bandwidth,
thereby reducing the regulator’s noise sensitivity. For the
negative linear regulator, if noise on the ground reference
causes the design to be marginally stable, bypass the
negative output back to its reference voltage (VREF3N,
Figure 6). This technique reduces the differential noise
on the output. Ensure the voltage rating of the capacitor
exceeds the output voltage.
Base-Drive Noise Reduction
The high-impedance base driver is susceptible to system
noise, especially when the linear regulator is lightly loaded. Capacitively coupled switching noise or inductively
coupled EMI on the base drive causes fluctuations in the
base current, which appear as noise on the linear regulator’s output. To avoid this, keep the base-drive traces
away from the step-down converter and as short as possible to minimize noise coupling. Resistors in series with
the gate drivers (DH and DL) reduce the LX switching
noise generated by the step-down converter. Additionally,
a bypass capacitor (CBE) can be placed across the base-
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to-emitter resistor (Figure 7). This bypass capacitor, in
addition to the transistor’s input capacitance, reduces the
frequency of the second pole (fPOLE2) that could destabilize the linear regulator (see the Stability Requirements
section). Therefore, the stability requirements determine
the maximum base-to-emitter capacitance (CBE) that can
be added.
Transformer Selection
In systems where the step-down controller’s output
(OUT1) is not the highest voltage, a transformer can be
used to provide additional post-regulated, high-voltage
outputs. The transformer generates unregulated highvoltage supplies that power the positive and negative linear regulators. These unregulated supply voltages must
be high enough to keep the pass transistors from saturating. For positive output voltages, connect the transformer
as shown in the Typical Applications Circuits where the
minimum turns ratio (n2/n1) is determined by:
n 2 VOUT3_ + VQ4(SAT) + VD2
≥
n1
VOUT1
where VQ4(SAT) is OUT3P’s pass transistor’s saturation
voltage under full load. Since power transfer occurs when
the low-side MOSFET is on (DL = high), the transformer
cannot support heavy loads with high duty cycles on VOUT1.
Minimum Load Requirements
(Linear Regulators)
Under no-load conditions, leakage currents from the pass
transistors supply the output capacitor, even when the
transistor is off. Generally, this is not a problem since
the feedback resistors’ current drains the excess charge.
However, charge can build up on the output capacitor
over temperature, making VOUT2/3 rise above its set
point. Care must be taken to ensure the feedback resistors’ current exceeds the pass transistor’s leakage current
over the entire temperature range.
Thermal Consideration
The power dissipated by the series pass transistor is
calculated by:
=
PD
(| VIN -VOUT2/3 |) × IOUT2/3
where VIN is the input to the transistor of the LDO and
the absolute value of the difference between VIN and
VOUT2/3 is taken. VIN is derived from the transformer
winding ratio. The transistor must be adequately heat
sunk to prevent a thermal runaway condition. Refer to the
transistor data sheet for thermal calculation.
Maxim Integrated │ 30
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
VIN
C1
1µF
R15
10Ω
C10
2.2µF
VL
IN
R10
68.1kΩ
PVL
BST
SUP2
C2
10µF
D1
100mA, 30V
(CMOSH-3)
PFI
EN/SYNC
FB1
C5
R3
6.8kΩ 4.7nF
R25
5.1Ω
R19
200Ω
C9
0.1µF
C13
0.1µF
DRV2
REF
R5
340Ω
FB2
GND
RA
100Ω
SEQ
SS
CSN
Q3
30V, 23A
N-CHANNEL
MOSFET
(IRLR2703)
R6
160Ω
CA
0.68µF
R8
100kΩ
PFO
POR
L1B
DRV3P
CSP
FB3P
VOUT1
3.3V, 2A
VOUT2
2.5V, 1.5A
PFO
R12
1kW
CSN
C6
10µF
R9
100kΩ
R1
13.3kΩ
C11
680pF
R4
620Ω
R2
8.06kΩ
POR
R17
665kΩ
ILIM
C4
47µF
FB1
MAX8513
FREQ
COUPLED INDUCTOR
L1A = 1.8µH, 4.5A/0.01Ω
n2/n1 = 20:6
(COILTRONICS, CTX 03-16101)
R20
200Ω
C14
CSP 0.47mF
PGND
IC1
L1A
Q2
DL
COMP1
R7
10.7kΩ
R18
66.5kΩ
C3
0.1mF
LX
C12
33pF
VOUT1
C20 30V, 5.5A DUAL N-CHANNEL
1000pF
(FDS6984S)
Q1
DH
R11
12.4kΩ
R13
11.3kΩ
R14
806Ω
R26
Q4 1.5kΩ
40V, 200mA
PNP
(MMBT3906)
C7
1µF
C8
1µF
D2
CMPD4448
VOUT3P
12V, 50mA
C22
1000pF
CSN
CSP
Figure 5. MAX8513 Typical Applications Circuit
www.maximintegrated.com
Maxim Integrated │ 31
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
VIN 9V to 16V
C1
1µF
R15
10Ω
C10
2.2µF
VL
IN
R10
68.1kΩ
PVL
BST
SUP2
C2
10µF
D1
100mA, 30V
(CMOSH-3)
PFI
EN/SYNC
FB1
C5
R3
6.8kΩ 4.7nF
C3
0.1µF
R25
5.1Ω
LX
L1A
R19
200Ω
Q2
DL
COMP1
C12
33pF
IC1
MAX8514
REF
DRV2
R5
1.74kΩ
FB2
GND
RA
100Ω
SEQ
C13
0.1µF
SS
R1
13.3kΩ
CSN
ILIM
CA
0.68µF
CSP
C22
1000pF
CSN
R8
100kΩ
C6
10µF
R9
100kΩ
PFO
POR
R12
1kΩ
FB3P
R13
12.1kΩ
VOUT1
3.3V, 2A
VOUT2
2.5V, 1.5A
PFO
DRV3P
CSN
Q3
30V, 23A
N-CHANNEL
MOSFET
(IRLR2703)
R6
806Ω
C11
680pF
R4
620Ω
R2
8.06kΩ
POR
SUP3N
R17
665kΩ
R18
66.5kΩ
C4
47µF
FB1
FREQ
C9
0.1µF
COUPLED INDUCTOR
L1A = 1.8µH, 4.5A/0.01Ω
R20
200Ω
C14
CSP 0.47µF
PGND
R7
10.7kΩ
VOUT1
C20 30V, 5.5A DUAL N-CHANNEL
(FDS6984S)
1000pF
Q1
DH
R11
12.4kΩ
L1B
R26
Q4 1.5kΩ
40V, 200mA
NPN
(MMBT3904)
C7
1µF
C8
1µF
R14
3.31kΩ
D2
CMPD4448
VOUT3P
12V, 50mA
VREF3N
CSP
Figure 6. MAX8514 Typical Applications Circuit
www.maximintegrated.com
Maxim Integrated │ 32
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
L1B
VOUT1
C7
MAX8513
CBE
R12
Q4
DRV3P
R13
FB3P
C8
R14
VOUT3P
a) POSITIVE OUTPUT VOLTAGE
VOUT1
SUP3N
R14
VOUT1
FB3N
R13
VOUT3N
C8
DRV3N
MAX8514
Q4
C BE
b) NEGATIVE OUTPUT VOLTAGE
R12
L1B
C7
Figure 7. Base-Drive Noise Reduction
Applications Information
PC Board Layout Guidelines
Careful PC board layout is critical to achieve low switching losses and clean, stable operation. The switching
power stage requires particular attention. Follow these
guidelines for good PC board layout:
Place decoupling capacitors as close to the IC pins as
possible. Keep separate the power-ground plane (connect to the sources of the low-side MOSFET, PGND,
and the output capacitor’s return). Connect the input
decoupling capacitors across the drain of the high-side
MOSFETs and the source of the low-side MOSFETs. The
signal-ground plane (connected to GND) is connected
to the rest of the circuit-ground return. The two ground
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planes then connect together with a single connection at
the IC. Keep the high-current paths as short as possible.
Connect the drains of the MOSFETS to a large copper
area to help in cooling the devices, further improving efficiency and long-term reliability.
1) Ensure all feedback connections are short and direct.
Place the feedback resistors as close to the IC as possible.
2) Route high-speed switching nodes away from sensitive analog areas (FB_, COMP, ILIM).
3) Ensure the current-sense paths for CSP and CSN run
parallel and close together to cancel any noise pickup.
4) A reference PC board layout included in the MAX8513
evaluation kit is also provided to further aid layout.
Maxim Integrated │ 33
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Pin Configurations
TOP VIEW
28 SS
PFI 1
28 SS
PFI 1
PFO 2
27 CSN
PFO 2
27 CSN
DH 3
26 CSP
DH 3
26 CSP
LX 4
25 ILIM
LX 4
25 ILIM
BST 5
24 FB3P
BST 5
DL 6
MAX8513
23 POR
DL 6
22 IN
PVL 7
20 N.C.
VL 9
19 SYNC/EN
COMP1 10
23 POR
PGND 8
21 DRV3N
VL 9
20 SUP3N
19 SYNC/EN
COMP1 10
18 SEQ
FB1 11
24 FB3N
22 IN
PVL 7
21 DRV3P
PGND 8
MAX8514
18 SEQ
FB1 11
FREQ 12
17 SUP2
FREQ 12
17 SUP2
REF 13
16 DRV2
REF 13
16 DRV2
GND 14
15 FB2
GND 14
15 FB2
28 QSOP
Chip Information
TRANSISTOR COUNT: 4824
PROCESS: BiCMOS
www.maximintegrated.com
28 QSOP
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
28 QSOP
E28-1
21-0055
90-0173
Maxim Integrated │ 34
MAX8513/MAX8514
Wide-Input, High-Frequency Triple-Output Supplies
with Voltage Monitor and Power-On Reset
Revision History
REVISION
NUMBER
REVISION
DATE
PAGES
CHANGED
0
2/04
Initial release
—
1
4/14
No /V OPNs; removed Automotive reference from Applications section
1
DESCRIPTION
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
© 2014 Maxim Integrated Products, Inc. │ 35