15 MHz Rail-to-Rail Operational Amplifiers OP162/OP262/OP462
FEATURES
Wide bandwidth: 15 MHz Low offset voltage: 325 µV max Low noise: 9.5 nV/√Hz @ 1 kHz Single-supply operation: 2.7 V to 12 V Rail-to-rail output swing Low TCVOS: 1 µV/°C typ High slew rate: 13 V/µs No phase inversion Unity-gain stable
PIN CONFIGURATIONS
NULL 1
–IN A 2
+IN A 3
8
NULL
V+
OP162
7
NC = NO CONNECT
Figure 1. 8-Lead Narrow-Body SOIC (S Suffix)
NULL 1 –IN A +IN A
2 3 4 8
NULL V+ OUT A NC
00288-002
00288-006
OP162
TOP VIEW (Not to Scale)
7 6 5
APPLICATIONS
Portable instrumentation Sampling ADC amplifier Wireless LANs Direct access arrangement Office automation
V–
NC = NO CONNECT
Figure 2. 8-Lead TSSOP (RU Suffix) 8-Lead MSOP (RM Suffix)
OUT A 1
–IN A 2
+IN A 3
8
V+
OUT B
00288-003
00288-005
00288-004
OP262
7
GENERAL DESCRIPTION
The OP162 (single), OP262 (dual), and OP462 (quad) rail-torail 15 MHz amplifiers feature the extra speed new designs require, with the benefits of precision and low power operation. With their incredibly low offset voltage of 45 µV (typical) and low noise, they are perfectly suited for precision filter applications and instrumentation. The low supply current of 500 µA (typical) is critical for portable or densely packed designs. In addition, the rail-to-rail output swing provides greater dynamic range and control than standard video amplifiers. These products operate from single supplies as low as 2.7 V to dual supplies of ±6 V. The fast settling times and wide output swings recommend them for buffers to sampling A/D converters. The output drive of 30 mA (sink and source) is needed for many audio and display applications; more output current can be supplied for limited durations. The OPx62 family is specified over the extended industrial temperature range (–40°C to +125°C). The single OP162 amplifiers are available in 8-lead SOIC, MSOP, and TSSOP packages. The dual OP262 amplifiers are available in 8-lead SOIC and TSSOP packages. The quad OP462 amplifiers are available in 14-lead, narrow-body SOIC and TSSOP packages.
6 –IN B TOP VIEW V– 4 (Not to Scale) 5 +IN B
Figure 3. 8-Lead Narrow-Body SOIC (S Suffix)
OUT A 1 –IN A
2
8
V+ OUT B –IN B +IN B
OP262
TOP VIEW (Not to Scale)
7 6 5
+IN A 3 V–
4
Figure 4. 8-Lead TSSOP (RU Suffix)
OUT A 1
–IN A 2
+IN A 3
V+ 4
14
13
OUT D
–IN D
+IN D
OP462
12
TOP VIEW 11 V– (Not to Scale) +IN B 5 10 +IN C
–IN B 6
OUT B 7
9
8
–IN C
OUT C
Figure 5. 14-Lead Narrow-Body SOIC (S Suffix)
OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B
7
14 13
OUT D –IN D +IN D V– +IN C –IN C OUT C
OP462
TOP VIEW (Not to Scale)
12 11 10 9 8
Figure 6. 14-Lead TSSOP (RU Suffix)
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2005 Analog Devices, Inc. All rights reserved.
00288-001
6 OUT A TOP VIEW V– 4 (Not to Scale) 5 NC
OP162/OP262/OP462 TABLE OF CONTENTS
Specifications ...........................................................................................3 Absolute Maximum Ratings .................................................................6 ESD Caution .................................................................................. 6 Typical Performance Characteristics ..................................................7 Applications ...........................................................................................12 Functional Description .............................................................. 12 Offset Adjustment ...................................................................... 12 Rail-to-Rail Output .................................................................... 12 Output Short-Circuit Protection .............................................. 12 Input Overvoltage Protection ................................................... 13 Output Phase Reversal ............................................................... 13 Power Dissipation ....................................................................... 13 Unused Amplifiers ..................................................................... 14 Power-On Settling Time ............................................................ 14 Capacitive Load Drive ............................................................... 14 Total Harmonic Distortion and Crosstalk .............................. 15 PCB Layout Considerations ...................................................... 15 Application Circuits ............................................................................ 16 Single-Supply Stereo Headphone Driver................................. 16 Instrumentation Amplifier........................................................ 16 Direct Access Arrangement ...................................................... 17 Spice Macro-Model .................................................................... 18 Outline Dimensions ............................................................................ 19 Ordering Guide .......................................................................... 20
REVISION HISTORY
1/05—Rev. E to Rev. F Changes to Absolute Maximum Ratings Table 4 and Table 5 .... 6 Change to Figure 36 ....................................................................... 13 Changes to Ordering Guide .......................................................... 20 12/04—Rev. D to Rev. E Updated Format..................................................................Universal Changes to General Description .................................................... 1 Changes to Specifications ................................................................ 3 Changes to Package Type................................................................. 6 Change to Figure 16 ......................................................................... 8 Change to Figure 22 ......................................................................... 9 Change to Figure 36 ....................................................................... 13 Change to Figure 37 ....................................................................... 14 Changes to Ordering Guide .......................................................... 20 10/02—Rev. C to Rev. D Deleted 8-Lead Plastic DIP (N-8) ....................................Universal Deleted 14-Lead Plastic DIP (N-14) ................................Universal Edits to ORDERING GUIDE........................................................ 19 Edits to Figure 30............................................................................ 19 Edits to Figure 31............................................................................ 19 Updated Outline Dimensions ....................................................... 19
Rev. F | Page 2 of 20
OP162/OP262/OP462 SPECIFICATIONS
@ VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 1. Electrical Characteristics
Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP162G, OP262G, OP462G –40°C ≤ TA ≤ +125°C H grade, –40°C ≤ TA ≤ +125°C D grade –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C Input Offset Current Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain IOS –40°C ≤ TA ≤ +125°C VCM CMRR AVO 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 ≤ VOUT ≤ 4.5 V RL = 10 kΩ, 0.5 ≤ VOUT ≤ 4.5 V RL = 10 kΩ, –40°C ≤ TA ≤ +125°C G grade 0 70 65 40 110 30 88 600 1 250 IL = 250 µA, –40°C ≤ TA ≤ +125°C I L = 5 mA IL = 250 µA, –40°C ≤TA ≤ +125°C IL = 5 mA Short to ground 4.95 4.85 4.99 4.94 14 65 ±80 ±30 120 90 600 500 750 1 700 850 ±2.5 Min Typ 45 Max 325 800 1 3 5 600 650 ±25 ±40 4 Unit µV µV mV mV mV nA nA nA nA V dB V/mV V/mV V/mV µV µV/°C pA/°C V V mV mV mA mA dB dB µA mA µA µA V/µs ns MHz Degrees µV p-p nV/√Hz pA/√Hz
0.8 360
Input Bias Current
IB
Long-Term Offset Voltage1 Offset Voltage Drift2 Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short-Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier
VOS ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY
50 150
VS = 2.7 V to 7 V –40°C ≤ TA ≤ +125°C OP162, VOUT = 2.5 V –40°C ≤ TA ≤ +125°C OP262, OP462, VOUT = 2.5 V –40°C ≤ TA ≤ +125°C 1 V < VOUT < 4 V, RL = 10 kΩ To 0.1%, AV = –1, VO = 2 V step
DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
1 2
SR tS GBP φm en p-p en in
10 540 15 61 0.5 9.5 0.4
0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3. Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
Rev. F | Page 3 of 20
OP162/OP262/OP462
@ VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 2. Electrical Characteristics
Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP162G, OP262G, OP462G G, H grades, –40°C ≤ TA ≤ +125°C D grade –40°C ≤ TA ≤ +125°C Min Typ 50 0.8 360 ±2.5 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V RL = 10 kΩ, 0.5 V ≤ VOUT ≤ 2.5 V G grade IL = 250 µA IL= 5 mA IL = 250 µA IL= 5 mA VS = 2.7 V to 7 V, –40°C ≤ TA ≤ +125°C OP162, VOUT = 1.5 V –40°C ≤ TA ≤ +125°C OP262, OP462, VOUT = 1.5 V –40°C ≤ TA ≤ +125°C RL = 10 kΩ To 0.1%, AV = –1, VO = 2 V step 0 70 20 110 20 30 600 2.95 2.85 2.99 2.93 14 66 Max 325 1 3 5 600 ±25 2 Unit µV mV mV mV nA nA V dB V/mV V/mV µV V V mV mV
Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain Long-Term Offset Voltage1 OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier
IB IOS VCM CMRR AVO VOS VOH VOL
50 150
PSRR ISY
60
110 600 500
700 1 650 850
dB µA mA µA µA V/µs ns MHz Degrees µV p-p nV/√Hz pA/√Hz
DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
1
SR tS GBP φm en p-p en in
10 575 15 59 0.5 9.5 0.4
0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at 125°C, with an LTPD of 1.3.
Rev. F | Page 4 of 20
OP162/OP262/OP462
@ VS = ±5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 3. Electrical Characteristics
Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP162G, OP262G, OP462G −40°C ≤ TA ≤ +125°C H grade, –40°C ≤ TA ≤ +125°C D grade −40°C ≤ TA ≤ +125°C −40°C ≤ TA ≤ +125°C Input Offset Current Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain IOS −40°C ≤ TA ≤ +125°C VCM CMRR AVO −4.9 V ≤ VCM ≤ +4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V RL = 10 kΩ, –4.5 V ≤ VOUT ≤ +4.5 V −40°C ≤ TA ≤ +125°C G grade –5 70 75 25 110 35 120 600 1 250 IL = 250 µA, –40°C ≤ TA ≤ +125°C IL= 5 mA IL = 250 µA, –40°C ≤ TA ≤ +125°C IL= 5 mA Short to ground 4.95 4.85 4.99 4.94 –4.99 –4.94 ±80 ±30 ±2.5 Min Typ 25 Max 325 800 1 3 5 500 650 ±25 ±40 +4 Unit µV µV mV mV mV nA nA nA nA V dB V/mV V/mV V/mV µV µV/°C pA/°C V V V V mA mA
0.8 260
Input Bias Current
IB
Long-Term Offset Voltage1 Offset Voltage Drift2 Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short-Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier
VOS ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY
–4.95 –4.85
VS = ±1.35 V to ±6 V, −40°C ≤ TA ≤ +125°C OP162, VOUT = 0 V −40°C ≤ TA ≤ +125°C OP262, OP462, VOUT = 0 V −40°C ≤ TA ≤ +125°C
60
110 650 550
Supply Voltage Range DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density
1 2
VS SR tS GBP φm en p-p en in −4 V < VOUT < 4 V, RL = 10 kΩ To 0.1%, AV = –1, VO = 2 V step
3.0 (±1.5) 13 475 15 64 0.5 9.5 0.4
800 1.15 775 1 12 (±6)
dB µA mA µA mA V V/µs ns MHz Degrees µV p-p nV/√Hz pA/√Hz
0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3. Offset voltage drift is the average of the −40°C to +25°C delta and the +25°C to +125°C delta.
Rev. F | Page 5 of 20
OP162/OP262/OP462 ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Supply Voltage Input Voltage1 Differential Input Voltage2 Internal Power Dissipation SOIC (S) MSOP (RM) TSSOP (RU) Output Short-Circuit Duration Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature Range (Soldering, 10 sec) Min ±6 V ±6 V ±0.6 V Observe Derating Curves Observe Derating Curves Observe Derating Curves Observe Derating Curves –65°C to +150°C –40°C to +125°C –65°C to +150°C 300°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only ; functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Table 5.
Package Type 8-Lead SOIC (S) 8-Lead TSSOP (RU) 8-Lead MSOP (RM) 14-Lead SOIC (S) 14-Lead TSSOP (RU) θJA1 157 208 190 105 148 θJC 56 44 Unit °C/W °C/W °C/W °C/W °C/W
1
2
For supply voltages greater than 6 V, the input voltage is limited to less than or equal to the supply voltage. For differential input voltages greater than 0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices.
____________________________
1
θJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in circuit board for SOIC, MSOP, and TSSOP packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. F | Page 6 of 20
OP162/OP262/OP462 TYPICAL PERFORMANCE CHARACTERISTICS
250 VS = 5V TA = 25°C COUNT = 720 OP AMPS
125 VS = 5V
150
INPUT OFFSET VOLTAGE (µV)
00288-007
200
100
QUANTITY (Amplifiers)
75
100
50
50
25
00288-010
0 –200
–140
–80 –20 40 100 INPUT OFFSET VOLTAGE (µV)
160
0 –75
–50
–25
0 25 50 75 TEMPERATURE (°C)
100
125
150
Figure 7. OP462 Input Offset Voltage Distribution
100 VS = 5V TA = 25°C COUNT = 360 OP AMPS
Figure 10. OP462 Input Offset Voltage vs. Temperature
0 VS = 5V –100
80
QUANTITY (Amplifiers)
60
INPUT BIAS CURRENT (nA)
00288-008
–200
40
–300
20
–400
00288−011
0 0.2
0.3
0.5 0.7 0.9 1.1 1.3 INPUT OFFSET DRIFT, TCVOS (µV,°C)
1.5
–500 –50
–25
0
25 50 75 TEMPERATURE (°C)
100
125
150
Figure 8. OP462 Input Offset Voltage Drift ( TCVOS)
420 VS = 5V
INPUT OFFSET CURRENT (nA)
15
Figure 11. OP462 Input Bias Current vs. Temperature
VS = 5V
340
INPUT CURRENT (nA)
10
260
5
180
00288-009
100 0 0.5 1.0 1.5 2.0 2.5 3.0 COMMON-MODE VOLTAGE (V) 3.5 4.0
0 –75
–50
–25
0 25 50 75 TEMPERATURE (°C)
100
125
150
Figure 9. OP462 Input Bias Current vs. Common-Mode Voltage
Figure 12. OP462 Input Offset Current vs. Temperature
Rev. F | Page 7 of 20
00288−012
OP162/OP262/OP462
5.12 VS = 5V 100
IOUT = 250µA 5.00
OUTPUT LOW VOLTAGE (mV)
OUTPUT HIGH VOLTAGE (V)
5.06
80
60 VS = 10V 40 VS = 3V
4.94 IOUT = 5mA 4.88
00288-013
20
00288-016
4.82 –75
0 0 1 2 3 4 5 LOAD CURRENT (mA) 6 7
–50
–25
0 25 50 75 TEMPERATURE (°C)
100
125
150
Figure 13. OP462 Output High Voltage vs. Temperature
0.100 VS = 5V
Figure 16. Output Low Voltage to Supply Rail vs. Load Current
1.0 0.9 0.8
OUTPUT LOW VOLTAGE (mV)
0.080
SUPPLY CURRENT (mA)
IOUT = 5mA 0.060
VS = 10V 0.7 0.6 0.5 0.4 0.3 0.2 VS = 5V VS = 3V
0.040
0.020
00288-014
IOUT = 250µA 0.000 –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125
0.1 0 –75 –50 –25 0 25 75 TEMPERATURE (°C) 100 125
150
150
Figure 14. OP462 Output Low Voltage vs. Temperature
100 RL = 10kΩ 80 0.7
Figure 17. Supply Current/Amplifier vs. Temperature
TA = 25°C
OPEN-LOOP GAIN (V/mV)
VS = 5V 60
SUPPLY CURRENT (mA)
0.6
40 RL = 2kΩ 20
00288-015
0.5
RL = 600kΩ 0 –75 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125
150
0
2
4 6 8 SUPPLY VOLTAGE (V)
10
12
Figure 15. OP462 Open-Loop Gain vs. Temperature
Figure 18. OP462 Supply Current/Amplifier vs. Supply Voltage
Rev. F | Page 8 of 20
00288-018
0.4
00288-017
OP162/OP262/OP462
50 40 30 20 GAIN (dB) 10 0 –10 –20 –30 100k PHASE VS = 5V TA = 25°C 45 PHASE SHIFT (dB)
4
GAIN
3 0.1% 2 VS = 5V TA = 25°C 0.01%
135 180 225
STEP SIZE (V)
90
1 0 –1 –2 0.1% 0.01%
00288-022
00288-019
270
–3 –4
1M
10M FREQUENCY (Hz)
100M
0
200
400 600 SETTLING TIME (nS)
800
1000
Figure 19. Open-Loop Gain and Phase vs. Frequency (No Load)
60 VS = 5V TA = 25°C RL = 830Ω CL = 5pF 60
Figure 22. Step Size vs. Settling Time
40
50
CLOSED-LOOP GAIN (dB)
VS = 5V TA = 25°C TA = ±50mV RL = 10kΩ
20
OVERSHOOT (%)
40
30
+OS –OS
0
20
–20
00288-020
10
00288-023
–30 10k
100k
1M FREQUENCY (Hz)
10M
100M
0 10
100 CAPACITANCE (pF)
1000
Figure 20. Closed-Loop Gain vs. Frequency
5 70 60 4
Figure 23. Small-Signal Overshoot vs. Capacitance
MAXIMUM OUTPUT SWING (V p-p)
VS = 5V TA = 25°C
NOISE DENSITY (nV/√Hz)
00288-021
50
3
40 30 20 10 0 1 10 100 FREQUENCY (Hz) 1k
2 VS = 5V AVCL = 1 RL = 10kΩ CL = 15pF TA = 25°C DISTORTION