OP295GP

Dual/Quad Rail-to-Rail Operational Amplifiers OP295/OP495 Battery-operated instrumentation Servo amplifiers Actuator drives Sensor conditioners Power supply control GENERAL DESCRIPTION Rail-to-rail output swing combined with dc accuracy are the key features of the OP495 quad and OP295 dual CBCMOS operational amplifiers. By using a bipolar front end, lower noise and higher accuracy than those of CMOS designs have been achieved. Both input and output ranges include the negative supply, providing the user with zero-in/zero-out capability. For users of 3.3 V systems such as lithium batteries, the OP295/OP495 are specified for 3 V operation. Maximum offset voltage is specified at 300 μV for 5 V operation, and the open-loop gain is a minimum of 1000 V/mV. This yields performance that can be used to implement high accuracy systems, even in single-supply designs. The ability to swing rail-to-rail and supply 15 mA to the load makes the OP295/OP495 ideal drivers for power transistors and H bridges. This allows designs to achieve higher efficiencies and to transfer more power to the load than previously possible without the use of discrete components. For applications such as transformers that require driving inductive loads, increases in efficiency are also possible. Stability while driving capacitive loads is another benefit of this design over CMOS rail-to-rail amplifiers. This is useful for driving coax cable or large FET transistors. The OP295/OP495 are stable with loads in excess of 300 pF. 2 +IN A 3 V– 4 OP295 TOP VIEW (Not to Scale) 8 V+ 7 OUT B 6 –IN B 5 +IN B 00331-001 1 –IN A Figure 1. 8-Lead Narrow-Body SOIC_N S Suffix (R-8) OUT A 1 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B OP295 00331-002 APPLICATIONS OUT A Figure 2. 8-Lead PDIP P Suffix (N-8) OUT A 1 14 OUT D –IN A 2 13 –IN D +IN A 3 12 +IN D V+ 4 11 V– +IN B 5 10 +IN C –IN B 6 9 –IN C OUT B 7 8 OUT C OP495 00331-003 Rail-to-rail output swing Single-supply operation: 3 V to 36 V Low offset voltage: 300 μV Gain bandwidth product: 75 kHz High open-loop gain: 1000 V/mV Unity-gain stable Low supply current/per amplifier: 150 μA maximum PIN CONFIGURATIONS Figure 3. 14-Lead PDIP P Suffix (N-14) OUT A 1 16 OUT D –IN A 2 15 –IN D +IN A 3 14 +IN D V+ 4 13 V– +IN B 5 12 +IN C –IN B 6 11 –IN C OUT B 7 10 OUT C NC 8 9 NC OP495 TOP VIEW (Not to Scale) NC = NO CONNECT 00331-004 FEATURES Figure 4. 16-Lead SOIC_W S Suffix (RW-16) The OP295 and OP495 are specified over the extended industrial (−40°C to +125°C) temperature range. The OP295 is available in 8-lead PDIP and 8-lead SOIC_N surface-mount packages. The OP495 is available in 14-lead PDIP and 16-lead SOIC_W surface-mount packages. Rev. G Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2009 Analog Devices, Inc. All rights reserved. OP295/OP495 TABLE OF CONTENTS Features .............................................................................................. 1 Direct Access Arrangement ...................................................... 10 Applications ....................................................................................... 1 Single-Supply Instrumentation Amplifier .............................. 10 General Description ......................................................................... 1 Single-Supply RTD Thermometer Amplifier ......................... 11 Pin Configurations ........................................................................... 1 Revision History ............................................................................... 2 Cold Junction Compensated, Battery-Powered Thermocouple Amplifier .......................................................... 11 Specifications..................................................................................... 3 5 V Only, 12-Bit DAC That Swings 0 V to 4.095 V.................... 11 Electrical Characteristics ............................................................. 3 4 mA to 20 mA Current-Loop Transmitter ............................ 12 Absolute Maximum Ratings............................................................ 5 3 V Low Dropout Linear Voltage Regulator ............................. 12 Thermal Resistance ...................................................................... 5 Low Dropout, 500 mA Voltage Regulator with Foldback Current Limiting ........................................................................ 12 ESD Caution .................................................................................. 5 Typical Performance Characteristics ............................................. 6 Applications ....................................................................................... 9 Rail-to-Rail Application Information ........................................ 9 Low Drop-Out Reference ............................................................ 9 Low Noise, Single-Supply Preamplifier ..................................... 9 Square Wave Oscillator .............................................................. 13 Single-Supply Differential Speaker Driver .............................. 13 High Accuracy, Single-Supply, Low Power Comparator ...... 13 Outline Dimensions ....................................................................... 14 Ordering Guide .......................................................................... 16 Driving Heavy Loads ................................................................. 10 REVISION HISTORY 8/09—Rev. F to Rev. G Added Figure 18................................................................................ 8 Updated Outline Dimensions ....................................................... 17 3/08—Rev. E to Rev. F Changes to Offset Voltage Unit in Table 1 .................................... 3 Updated Outline Dimensions ....................................................... 14 Changes to Ordering Guide .......................................................... 16 3/02—Rev. B to Rev. C Figure changes to Pin Connections ................................................1 Deleted OP295GBC and OP495GBC from Ordering Guide ......3 Deleted Wafer Test Limits Table ......................................................3 Changes to Absolute Maximum Ratings ........................................4 Deleted Dice Characteristics ............................................................4 5/06—Rev. D to Rev. E Updated Format .................................................................. Universal Changes to Features.......................................................................... 1 Changes to Pin Connections ........................................................... 1 Updated Outline Dimensions ....................................................... 14 Changes to Ordering Guide .......................................................... 15 2/04—Rev. C to Rev. D Changes to General Description .................................................... 1 Changes to Specifications ................................................................ 2 Changes to Absolute Maximum Ratings ....................................... 4 Changes to Ordering Guide ............................................................ 4 Updated Outline Dimensions ....................................................... 12 Rev. G | Page 2 of 16 OP295/OP495 SPECIFICATIONS ELECTRICAL CHARACTERISTICS VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Conditions Min VOS Typ Max Unit 30 300 800 20 30 ±3 ±5 4.0 μV μV nA nA nA nA V dB V/mV V/mV μV/°C −40°C ≤ TA ≤ +125°C Input Bias Current IB 8 −40°C ≤ TA ≤ +125°C Input Offset Current IOS ±1 −40°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High VCM CMRR AVO 0 90 1000 500 ΔVOS/ΔT VOH Output Voltage Swing Low VOL Output Current POWER SUPPLY Power Supply Rejection Ratio IOUT Supply Current per Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C RL = 10 kΩ, 0.005 ≤ VOUT ≤ 4.0 V RL = 10 kΩ, −40°C ≤ TA ≤ +125°C PSRR ISY 110 10,000 1 RL = 100 kΩ to GND RL = 10 kΩ to GND IOUT = 1 mA, −40°C ≤ TA ≤ +125°C RL = 100 kΩ to GND RL = 10 kΩ to GND IOUT = 1 mA, −40°C ≤ TA ≤ +125°C 4.98 4.90 ±11 ±1.5 V ≤ VS ≤ ±15 V ±1.5 V ≤ VS ≤ ±15 V, –40°C ≤ TA ≤ +125°C VOUT = 2.5 V, RL = ∞, −40°C ≤ TA ≤ +125°C 90 85 5.0 4.94 4.7 0.7 0.7 90 ±18 5 2 2 110 150 V V V mV mV mV mA dB dB μA SR GBP θO RL = 10 kΩ 0.03 75 86 V/μs kHz Degrees en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 1.5 51