OP493EP

a FEATURES Operates from +1.7 V to 18 V Low Supply Current: 15 A/Amplifier Low Offset Voltage: 75 V Outputs Sink and Source: 8 mA No Phase Reversal Single or Dual Supply Operation High Open-Loop Gain: 600 V/mV Unity-Gain Stable APPLICATIONS Digital Scales Strain Gages Portable Medical Equipment Battery Powered Instrumentation Temperature Transducer Amplifier OUT A –IN A +IN A V– NULL –IN A +IN A V– Precision, Micropower Operational Amplifiers OP193/OP293/OP493* PIN CONFIGURATIONS 8-Lead SO (S Suffix) NC V+ NULL 1 –IN A 2 +IN A 3 V– 4 NC = NO CONNECT 8-Lead Epoxy DIP (P Suffix) OP193 8 7 6 5 NC V+ OUT A NULL OP193 OUT A NULL 8-Lead SO (S Suffix) V+ 8-Lead Epoxy DIP (P Suffix) GENERAL DESCRIPTION The OP193 family of single-supply operational amplifiers features a combination of high precision, low supply current and the ability to operate at low voltages. For high performance in single supply systems the input and output ranges include ground, and the outputs swing from the negative rail to within 600 mV of the positive supply. For low voltage operation the OP193 family can operate down to 1.7 volts or ± 0.85 volts. The combination of high accuracy and low power operation make the OP193 family useful for battery powered equipment. Its low current drain and low voltage operation allow it to continue performing long after other amplifiers have ceased functioning either because of battery drain or headroom. The OP193 family is specified for single +2 volt through dual ± 15 volt operation over the HOT (–40°C to +125°C) temperature range. They are available in plastic DIPs, plus SOIC surface mount packages. *Patent pending. OP293 OUT B –IN B +IN B OUT A 1 –IN A 2 +IN A 3 V– 4 OP293 8 7 6 5 V+ OUT B –IN B +IN B 14-Lead Epoxy DIP (P Suffix) 16-Lead Wide Body SOL (S Suffix) OUT A –IN A +IN A V+ +IN B –IN B OUT B NC OUT D –IN D +IN D V– +IN C –IN C OUT C NC OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B 7 14 OUT D 13 –IN D 12 +IN D OP493 OP493 11 V– 10 +IN C 9 8 –IN C OUT C NC = NO CONNECT REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. © Analog Devices, Inc., 1996 One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 OP193/OP293/OP493–SPECIFICATIONS ELECTRICAL SPECIFICATIONS (@ V = S 15.0 V, TA = +25 C unless otherwise noted) “E” Grade Min Typ Max 75 175 100 200 125 225 15 2 +13.5 116 “F” Grade Min Typ Max 150 250 250 350 275 375 20 4 +13.5 116 Units µV µV µV µV µV µV nA nA V dB dB V/mV V/mV V/mV V/mV V/mV V/mV V/mV V/mV V/mV µV µV/°C V V V V V V mA dB dB 30 65 0.05 3 15 35 120 µA nV/√Hz pA/√Hz µV p-p V/ms kHz dB Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP193 OP193, –40°C ≤ TA ≤ +125°C OP293 OP293, –40°C ≤ TA ≤ +125°C OP493 OP493, –40°C ≤ TA ≤ +125°C VCM = 0 V, –40°C ≤ TA ≤ +125°C VCM = 0 V, –40°C ≤ TA ≤ +125°C –14.9 ≤ VCM ≤ +14 V –14.9 ≤ VCM ≤ +14 V, –40°C ≤ TA ≤ +125°C RL = 100 kΩ, –10 V ≤ VOUT ≤ +10 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C R L = 10 k Ω, –10 V ≤ VOUT ≤ +10 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C R L = 2 k Ω, –10 V ≤ VOUT ≤ +10 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C Note 1 Note 2 I L = 1 mA IL = 1 mA, –40°C ≤ TA ≤ +125°C I L = 5 mA IL = –1 mA IL = –1 mA, –40°C ≤ TA ≤ +125°C IL = –5 mA Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection IB IOS VCM CMRR –14.9 100 97 500 300 –14.9 97 94 500 300 Large Signal Voltage Gain AVO 300 350 200 150 200 125 100 0.2 +14.1 14.2 +14.0 +13.9 14.1 –14.7 –14.6 –14.4 14.2 –14.1 ± 25 100 97 30 65 0.05 3 15 35 120 120 97 94 150 1.75 200 125 350 200 300 Large Signal Voltage Gain AVO 150 Large Signal Voltage Gain AVO 100 300 Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High VOS ∆VOS/∆T VOH +14.1 14.2 +14.0 +13.9 14.1 -14.7 –14.6 –14.4 14.2 –14.1 ± 25 120 Output Voltage Swing Low VOL Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio ISC PSRR VS = ± 1.5 V to ± 18 V VS = ± 1.5 V to ± 18 V, –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C, RL = ∞ VOUT = 0 V, VS = ± 18 V f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz R L = 2 kΩ VOUT = 10 V p-p, RL = 2 kΩ, f = 1 kHz Supply Current/Amplifier NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Channel Separation ISY en in en p-p SR GBP NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the –40 °C to +25°C delta and the +25 °C to +125 °C delta. Specifications subject to change without notice. –2– REV. A OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS (@ V = +5.0 V, V S CM = 0.1 V, TA = +25 C unless otherwise noted) “E” Grade Min Typ Max 75 175 100 200 125 225 15 2 4 116 “F” Grade Min Typ Max 150 250 250 350 275 375 20 4 4 116 Units µV µV µV µV µV µV nA nA V dB dB V/mV V/mV V/mV V/mV V/mV V/mV µV µV/°C V V V V mV mV mV mV mV mV mA dB dB µA nV/√Hz pA/√Hz µV p-p V/ms kHz Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP193 OP193, –40°C ≤ TA ≤ +125°C OP293 OP293, –40°C ≤ TA ≤ +125°C OP493 OP493, –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C 0.1 ≤ VCM ≤ +4 V 0.1 ≤ VCM ≤ +4 V, –40°C ≤ TA ≤ +125°C RL = 100 kΩ, 0.03 ≤ VOUT ≤ +4.0 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C R L = 1 0 kΩ , 0.03 ≤ VOUT ≤ +4.0 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C Note 1 Note 2 IL = 100 µA I L = 1 mA IL = 1 mA, –40°C ≤ TA ≤ +125°C I L = 5 mA IL = –100 µA IL = –100 µA, –40°C ≤ TA ≤ +125°C No Load IL = –1 mA IL = –1 mA, –40°C ≤ TA ≤ +125°C IL = –5 mA Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection IB IOS VCM CMRR 0 100 92 200 125 0 96 92 200 125 Large Signal Voltage Gain AVO 130 75 50 70 0.2 4.4 +4.1 4.4 +4.0 +4.0 4.4 140 150 1.25 75 50 130 Large Signal Voltage Gain AVO 70 300 Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High VOS ∆VOS/∆T VOH 4.4 +4.1 4.4 +4.0 +4.0 4.4 140 Output Voltage Swing Low VOL 160 220 160 220 5 280 400 500 900 5 280 400 500 900 Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio ISC PSRR VS = ± 1.7 V to ± 6.0 V VS = ± 1.5 V to ± 18 V, –40°C ≤ TA ≤ +125°C VCM = 2.5 V, RL = ∞ f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 kΩ 100 94 700 ±8 120 700 ±8 97 90 120 Supply Current/Amplifier NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product ISY en in en p-p SR GBP 14.5 65 0.05 3 12 35 14.5 65 0.05 3 12 35 NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the –40 °C to +25°C delta and the +25°C to +125 °C delta. Specifications subject to change without notice. REV. A –3– OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS (@ VS = +3.0 V, VCM = 0.1 V, TA = +25 C unless otherwise noted) Conditions OP193 OP193, –40°C ≤ TA ≤ +125°C OP293 OP293, –40°C ≤ TA ≤ +125°C OP493 OP493, –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C 0 97 90 100 75 100 0.2 +2.1 2.14 1.9 +1.9 2.1 280 150 1.25 +2.1 2.14 1.9 +1.9 2.1 280 116 “E” Grade Min Typ Max 75 175 100 200 125 225 15 2 2 “F” Grade Min Typ Max 150 250 250 350 275 375 20 4 2 116 Units µV µV µV µV µV µV nA nA V dB dB V/mV V/mV V/mV µV µV/°C V V V mV mV mV mA Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Large Signal Voltage Gain Long Term Offset Voltage Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage Swing High 0.1 ≤ VCM ≤ +2 V 0.1 ≤ VCM ≤ +2 V, –40°C ≤ TA ≤ +125°C AVO RL = 100 kΩ, 0.03 ≤ VOUT ≤ 2 V –40°C ≤ TA ≤ +85°C –40°C ≤ TA ≤ +125°C VOS Note 1 ∆VOS/∆T Note 2 VOH I L = 1 mA IL = 1 mA, –40°C ≤ TA ≤ +125°C I L = 5 mA IL = –1 mA IL = –1 mA –40°C ≤ TA ≤ +125°C IL = –5 mA IB IOS VCM CMRR 0 94 87 100 75 100 300 Output Voltage Swing Low VOL 400 500 900 400 500 900 Short Circuit Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Channel Separation ISC PSRR ISY VS en in en p-p SR GBP f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz RL = 2 kΩ VOUT = 10 V p-p, RL = 2 kΩ, f = 1 kHz VS = +1.7 V to +6 V, –40°C ≤ TA ≤ +125°C VCM = 1.5 V, RL = ∞ –40°C ≤ TA ≤ +125°C 100 94 700 ±8 700 ±8 97 90 +2 14.5 22 22 ± 18 65 0.05 3 10 25 120 +2 14.5 22 22 ± 18 65 0.05 3 10 25 120 dB µA µA V nV/√Hz pA/√Hz µV p-p V/ms kHz dB NOTES 1 Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3. 2 Offset voltage drift is the average of the –40 °C to +25°C delta and the +25°C to +125 °C delta. Specifications subject to change without notice. –4– REV. A OP193/OP293/OP493 ELECTRICAL SPECIFICATIONS (@ V = +2.0 V, V S CM = 0.1 V, TA = +25 C unless otherwise noted) “E” Grade Min Typ Max 75 175 100 175 125 225 15 2 1 70 150 100 94 13.2 20 25 ± 18 65 0.05 3 10 25 97 90 13.2 20 25 ± 18 65 0.05 3 10 25 “F” Grade Min Typ Max 150 250 250 350 275 375 20 4 1 70 300 Units µV µV µV µV µV µV nA nA V V/mV V/mV µV Parameter INPUT CHARACTERISTICS Offset Voltage Symbol VOS Conditions OP193 OP193, –40°C ≤ TA ≤ +125°C OP293 OP293, –40°C ≤ TA ≤ +125°C OP493 OP493, –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C RL = 100 kΩ, 0.03 ≤ VOUT ≤ 1 V –40°C ≤ TA ≤ +125°C Note 1 VS = +1.7 V to +6 V, –40°C ≤ TA ≤ +125°C VCM = 1.0 V, RL = ∞ –40°C ≤ TA ≤ +125°C Input Bias Current Input Offset Current Input Voltage Range Large Signal Voltage Gain Long Term Offset Voltage POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier Supply Voltage Range NOISE PERFORMANCE Voltage Noise Density Current Noise Density Voltage Noise DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product IB IOS VCM AVO VOS PSRR ISY VS en in en p-p SR GBP 0 60 0 60 +2 f = 1 kHz f = 1 kHz 0.1 Hz to 10 Hz R L = 2 kΩ +2 dB µA µA V nV/√Hz pA/√Hz µV p-p V/ms kHz WAFER TEST LIMITS (@ V = +5.0 V, V S CM = 0.1 V, VOUT = 2 V, TA = +25 C unless otherwise noted) Conditions VS = ± 15 V, VOUT = 0 V VS = +2 V, VOUT = 1.0 V VCM = 1.0 V VCM = 1.0 V 0 ≤ VCM ≤ 4 V VS = ± 1.5 V to ± 18 V RL = 100 kΩ IL = 1 m A IL = –1 mA VO = 0 V, RL = ∞, VS = ± 18 V Limit ± 75 ± 75 20 4 0 to 4 96 100 100 4.1 400 25 Units µV max µV max nA max nA max V min dB min dB min V/mV min V min mV max µA max Parameter Offset Voltage Input Bias Current Input Offset Current Input Voltage Range1 Common-Mode Rejection Power Supply Rejection Ratio Large Signal Voltage Gain Output Voltage Swing High Output Voltage Swing Low Supply Current/Amplifier Symbol VOS IB IOS VCM CMRR PSRR AVO VOH VOL ISY NOTES Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. 1 Guaranteed by CMRR test. Specifications subject to change without notice. REV. A –5– OP193/OP293/OP493 ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 18 V Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ± 18 V Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite Storage Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range OP193/OP293/OP493E, F . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C Package Type 8-Pin Plastic DIP (P) 8-Pin SOIC (S) 14-Pin Plastic DIP (P) 16-Pin SOL (S) θJA3 103 158 83 92 θJC 43 43 39 27 Units °C/W °C/W °C/W °C/W ORDERING GUIDE Model OP193EP OP193ES OP193ES-REEL OP193ES-REEL7 OP193FP OP193FS OP193FS-REEL OP193FS-REEL7 OP193GBC OP293EP OP293ES OP293ES-REEL OP293ES-REEL7 OP293FP OP293FS OP293FS-REEL OP293FS-REEL7 OP293GBC OP493EP OP493ES OP493ES-REEL OP493FP OP493FS OP493FS-REEL OP493GBC Temperature Range –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C +25°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C +25°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C +25°C 1 Package Description 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC DICE 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin SOIC 8-Pin SOIC DICE 14-Pin Plastic DIP 16-Pin SOL 16-Pin SOL 14-Pin Plastic DIP 16-Pin SOL 16-Pin SOL DICE 7 Package Option N-8 SO-8 SO-8 SO-8 N-8 SO-8 SO-8 SO-8 N-8 SO-8 SO-8 SO-8 N-8 SO-8 SO-8 SO-8 N-14 SOL-16 SOL-16 N-14 SOL-16 SOL-16 NOTES 1 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. 2 For supply voltages less than ± 18 V, the input voltage is limited to the supply voltage. 3 θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP, and θJA is specified for device soldered in circuit board for SOIC package. 2 DICE CHARACTERISTICS 6 1 8 7 3 4 5 OP193 Die Size 0.070 × 0.055 Inch, 3,850 Sq. Mils Substrate (Die Backside) Is Connected to V– Transistor Count, 55 1 8 7 2 6 2 6 5 3 4 5 OP493 Die Size 0.106 × 0.143 Inch, 15,158 Sq. Mils Substrate (Die Backside) Is Connected to V– Transistor Count, 215 3 4 OP293 Die Size 0.072 × 0.110 Inch, 7,920 Sq. Mils Substrate (Die Backside) Is Connected to V– Transistor Count, 105 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP193/OP293/OP493 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE –6– REV. A Typical Performance Characteristics–OP193/OP293/OP493 200 VS = ±15V TA = +25°C 450 x PDIPS 120 200 VS = +3V VCM = 0.1V TA = +25°C 450 x PDIPS 120 150 VS = +3V VCM = 0.1V –40°C ≤ TA ≤ +125°C 450 x PDIPS 90 NUMBER OF AMPLIFIERS NUMBER OF AMPLIFIERS 160 160 NUMBER OF AMPLIFIERS 120 80 80 60 40 40 30 0 –75 –60 –45 –30 –15 0 15 30 45 60 75 OFFSET – µV 0 –75 –60 –45 –30 –15 0 15 30 45 60 75 OFFSET – µV 0 0 0.2 0.6 0.4 TCVOS – µV/° C 0.8 1.0 Figure 1. OP193 Offset Distribution, VS = ± 15 V Figure 2. OP193 Offset Distribution, VS = + 3 V Figure 3. OP193 TCVOS Distribution, VS = + 3 V 150 VS = ±15V –40°C ≤ TA ≤ +125°C 450 x PDIPS 90 1 VS = +5V 120 100 –40°C –PSRR 5V ≤ VS ≤ 30V TA = +25°C NUMBER OF AMPLIFIERS 120 INPUT BIAS CURRENT – nA 0 PSRR – dB 80 +PSRR 60 40 –1 +125°C +25°C 60 –2 30 –3 20 0 10 0 0 0.2 0.6 0.4 TCVOS – µV/° C 0.8 1.0 –4 0 1 2 3 4 COMMON MODE VOLTAGE – Volts 5 100 1k FREQUENCY – Hz 10k Figure 4. OP193 TCVOS Distribution, VS = ± 15 V Figure 5. Input Bias Current vs. Common-Mode Voltage Figure 6. PSRR vs. Frequency 120 TA = +25°C 100 80 CMRR – dB 25 40 SHORT CIRCUIT CURRENT – mA 20 VS = ±15V SLEW RATE – V/ms +SR = –SR VS = ±15V +SR = –SR VS = +5V 30 + ISC VS = ±15V | – ISC | VS = ±15V 15 60 VS = +5V 40 20 0 10 20 10 5 10 | – ISC | VS = +5V 0 –50 –25 + ISC VS = +5V 100 125 100 1k FREQUENCY – Hz 10k 0 –50 –25 0 25 50 75 100 125 TEMPERATURE – ° C 0 25 50 75 TEMPERATURE – ° C Figure 7. CMRR vs. Frequency Figure 8. Slew Rate vs. Temperature Figure 9. Short Circuit Current vs. Temperature REV. A –7– OP193/OP293/OP493–Typical Performance Characteristics 0 INPUT OFFSET CURRENT – nA INPUT BIAS CURRENT – nA 0 25 VS = ±18V VS = ±15V SUPPLY CURRENT – µA –0.5 –1 20 –0.10 VS = +2V VCM = 0.1V –2 15 VS = +2V VCM = +1V 10 –0.15 –3 VS = +2V VCM = 0.1V –0.20 VS = ±15V –0.25 –50 –25 75 0 25 50 TEMPERATURE – ° C 100 125 –4 5 –5 –50 –25 0 25 50 75 100 125 0 –50 –25 0 25 50 75 100 125 TEMPERATURE – ° C TEMPERATURE – ° C Figure 10. Input Offset Current vs. Temperature Figure 11. Input Bias Current vs. Temperature Figure 12. Supply Current vs. Temperature 1000 1000 CURRENT NOISE DENSITY – pA/√ Hz 10000 DELTA FROM SUPPLY RAIL – mV VOLTAGE NOISE DENSITY – nV/√ Hz 5V ≤ VS ≤ 30V TA = +25°C 100 5V ≤ VS ≤ 30V TA = +25°C 100 5V ≤ VS ≤ 30V TA = +25°C 1000 DELTA FROM VCC 100 DELTA FROM VEE 10 10 10 1 0.1 1 1 1 10 100 FREQUENCY – Hz 1k 0.1 1 10 100 1k 0.1 1 10 100 1000 10000 FREQUENCY – Hz LOAD CURRENT – µA Figure 13. Voltage Noise Density vs. Frequency Figure 14. Current Noise Density vs. Frequency Figure 15. Delta Output Swing from Either Rail vs. Current Load 2500 1000 60 TA = +25°C VS = +5V 40 GAIN – dB VOLTAGE GAIN – V/mV 2000 –10V ≤ VOUT ≤ +10V 1500 VOLTAGE GAIN – V/mV VS = ±15V 800 VS = ±15V –10V ≤ VOUT ≤ +10V 600 20 1000 VS = +5V 0.03V ≤ VOUT ≤ 4V 400 VS = +5V 0.03V ≤ VOUT ≤ 4V 500 200 0 0 –50 –25 0 25 50 75 100 125 0 –50 –25 –20 0 25 50 75 100 125 10 TEMPERATURE – ° C TEMPERATURE – ° C 100 1k 10k FREQUENCY – Hz 100k Figure 16. Voltage Gain (RL = 100 kΩ) vs. Temperature Figure 17. Voltage Gain (RL = 10 kΩ) vs. Temperature Figure 18. Closed-Loop Gain vs. Frequency, VS = 5 V –8– REV. A OP193/OP293/OP493 60 TA = +25°C VS = ±15V 60 50 OVERSHOOT – % 40 GAIN – dB 20 GAIN 0 0 45 20 30 20 10 +OS RL = ∞ 0 –20 10 – OS RL = ∞ +OS = | – OS | RL = 10kΩ –20 –45 100 1k 10k 100k 0 10 FREQUENCY – Hz 100 1000 CAPACITIVE LOAD – pF 10000 –40 100 –90 1k 10k 100k 1M FREQUENCY – Hz Figure 19. Closed-Loop Gain vs. Frequency, VS = ± 15 V 60 VS = ±15V PHASE 90 PHASE – Degrees Figure 20. Small Signal Overshoot vs. Capacitive Load Figure 21. Open Loop, Gain and Phase vs. Frequency 40 V+ GAIN – dB 20 GAIN 0 45 I1 +INPUT 2k 2k Q1 –INPUT Q2 Q6 Q4 Q7 Q3 Q8 D1 R1A R2A TO OUTPUT STAGE I2 I3 I4 Q5 0 –20 –45 –40 100 –90 1k 10k 100k 1M FREQUENCY – Hz OP293, OP493 ONLY Figure 22. Open Loop, Gain and Phase vs. Frequency FUNCTIONAL DESCRIPTION I5 R1B R2B I6 V– The OP193 family of operational amplifiers are single-supply, micropower, precision amplifiers whose input and output ranges both include ground. Input offset voltage (VOS) is only 75 µV maximum, while the output will deliver ± 5 mA to a load. Supply current is only 17 µA. A simplified schematic of the input stage is shown in Figure 23. Input transistors Q1 and Q2 are PNP devices, which permit the inputs to operate down to ground potential. The input transistors have resistors in series with the base terminals to protect the junctions from over voltage conditions. The second stage is an NPN cascode which is buffered by an emitter follower before driving the final PNP gain stage. The OP193 includes connections to taps on the input load resistors, which can be used to null the input offset voltage, VOS. The OP293 and OP493 have two additional transistors, Q7 and Q8. The behavior of these transistors is discussed in the Output Phase Reversal section of this data sheet. The output stage, shown in Figure 24, is a noninverting NPN “totem-pole” configuration. Current is sourced to the load by emitter follower Q1, while Q2 provides current sink capability. When Q2 saturates, the output is pulled to within 5 mV of ground without an external pull-down resistor. The totem-pole output stage will supply a minimum of 5 mA to an external load, even when operating from a single 3.0 V power supply. By operating as an emitter follower, Q1 offers a high impedance load to the final PNP collector of the input stage. Base drive to Q2 is derived by monitoring Q1’s collector current. Transistor REV. A –9– NULLING TERMINALS (OP193 ONLY) Figure 23. OP193/OP293/OP493 Equivalent Input Circuit V+ Q4 FROM INPUT STAGE Q1 Q5 Q3 Q2 OUTPUT I3 I2 I1 V– Figure 24. OP193/OP293/OP493 Equivalent Output Circuit Q5 tracks the collector current of Q1. When Q1 is on, Q5 keeps Q4 off, and current source I1 keeps Q2 turned off. When Q1 is driven to cutoff (i.e., the output must move toward V–), Q5 allows Q4 to turn on. Q4’s collector current then provides the base drive for Q3 and Q2, and the output low voltage swing is set by Q2’s VCE,SAT which is about 5 mV. PHASE – Degrees 40 VS = +5V TA = +25°C AV = 1 50mV ≤ VIN ≤ 150mV LOADS TO GND 60 +OS = | – OS | RL = 50kΩ VS = +5V PHASE 90 40 GAIN – dB OP193/OP293/OP493 Driving Capacitive Loads OP193 family amplifiers are unconditionally stable with capacitive loads less than 200 pF. However, the small signal, unitygain overshoot will improve if a resistive load is added. For example, transient overshoot is 20% when driving a 1000 pF/ 10 kΩ load. When driving large capacitive loads in unity-gain configurations, an in-the-loop compensation technique is recommended as illustrated in Figure 28. Input Overvoltage Protection LITHIUM SULPHUR DIOXIDE CELL VOLTAGE – Volts As previously mentioned, the OP193 family of op amps use a PNP input stage with protection resistors in series with the inverting and noninverting inputs. The high breakdown of the PNP transistors, coupled with the protection resistors, provides a large amount of input protection from over voltage conditions. The inputs can therefore be taken 20 V beyond either supply without damaging the amplifier. Output Phase Reversal—OP193 High performance portable equipment and instruments frequently use lithium cells because of their long shelf life, light weight, and high energy density relative to older primary cells. Most lithium cells have a nominal output voltage of 3 V and are noted for a flat discharge characteristic. The low supply voltage requirement of the OP193, combined with the flat discharge characteristic of the lithium cell, indicates that the OP193 can be operated over the entire useful life of the cell. Figure 25 shows the typical discharge characteristic of a 1 AH lithium cell powering the OP193, OP293, and OP493, with each amplifier, in turn, driving 2.1 Volts into a 100 kΩ load. 4 3 The OP193’s input PNP collector-base junction can be forwardbiased if the inputs are brought more than one diode drop (0.7 V) below ground. When this happens to the noninverting input, Q4 of the cascode stage turns on and the output goes high. If the positive input signal can go below ground, phase reversal can be prevented by clamping the input to the negative supply (i.e., GND) with a diode. The reverse leakage of the diode will, of course, add to the input bias current of the amplifier. If input bias current is not critical, a 1N914 will add less than 10 nA of leakage. However, its leakage current will double for every 10°C increase in ambient temperature. For critical applications, the collector-base junction of a 2N3906 transistor will only add about 10 pA of additional bias current. To limit the current through the diode under fault conditions, a 1 kΩ resistor is recommended in series with the input. (The OP193’s internal current limiting resistors will not protect the external diode). Output Phase Reversal—OP293 and OP493 2 OP493 OP293 OP193 1 0 0 1000 2000 3000 4000 5000 6000 7000 HOURS Figure 25. Lithium Sulfur Dioxide Cell Discharge Characteristic with OP193 Family and 100 kΩ Loads Input Offset Voltage Nulling The OP293 and OP493 include lateral PNP transistors Q7 and Q8 to protect against phase reversal. If an input is brought more than one diode drop (≈0.7 V) below ground, Q7 and Q8 combine to level shift the entire cascode stage, including the bias to Q3 and Q4, simultaneously. In this case Q4 will not saturate and the output remains low. The OP293 and OP493 do not exhibit output phase reversal for inputs up to –5 V below V– at +25°C. The phase reversal limit at +125°C is about –3 V. If the inputs can be driven below these levels, an external clamp diode, as discussed in the previous section, should be added. Battery Powered Applications The OP193 provides two offset nulling terminals that can be used to adjust the OP193’s internal VOS. In general, operational amplifier terminals should never be used to adjust system offset voltages. The offset null circuit of Figure 26 provides about ± 7 mV of offset adjustment range. A 100 kΩ resistor placed in series with the wiper arm of the offset null potentiometer, as shown in Figure 27, reduces the offset adjustment range to 400 µV and is recommended for applications requiring high null resolution. Offset nulling does not adversely affect TCVOS performance, providing that the trimming potentiometer temperature coefficient does not exceed ± 100 ppm/°C. V+ 2 7 OP193 3 1 4 5 6 OP193 series op amps can be operated on a minimum supply voltage of +1.7 V, and draw only 13 µA of supply current per amplifier from a 2.0 V supply. In many battery-powered circuits, OP193 devices can be continuously operated for thousands of hours before requiring battery replacement, thus reducing equipment downtime and operating cost. 100kΩ V– Figure 26. Offset Nulling Circuit –10– REV. A OP193/OP293/OP493 V+ R1 240kΩ C1 1000pF R2 1.5MΩ 2 7 V+ (+2.5V TO +36V) 2 7 OP193 3 1 4 5 6 OP193 3 4 5 6 VOUT (1.23V @ 25°C) 100kΩ 100kΩ V– Q2 3 V1 1 MAT-01AH 2 VBE2 R3 68kΩ ∆VBE 7 Q1 6 Figure 27. High Resolution Offset Nulling Circuit A Micropower False-Ground Generator 5 VBE1 Some single supply circuits work best when inputs are biased above ground, typically at 1/2 of the supply voltage. In these cases a false ground can be created by using a voltage divider buffered by an amplifier. One such circuit is shown in Figure 28. This circuit will generate a false-ground reference at 1/2 of the supply voltage, while drawing only about 27 µA from a 5 V supply. The circuit includes compensation to allow for a 1 µF bypass capacitor at the false-ground output. The benefit of a large capacitor is that not only does the false ground present a very low dc resistance to the load, but its ac impedance is low as well. The OP193 can both sink and source more than 5 mA, which improves recovery time from transients in the load current. +5V OR +12V 10kΩ 0.022µF 240kΩ 2 7 100Ω R4 130kΩ R5 20kΩ OUTPUT ADJUST Figure 29. A Battery Powered Voltage Reference A Single-Supply Current Monitor OP193 3 240kΩ 1µF 4 6 +2.5V OR +6V 1µF Figure 28. A Micropower False-Ground Generator A Battery Powered Voltage Reference Current monitoring essentially consists of amplifying the voltage drop across a resistor placed in series with the current to be measured. The difficulty is that only small voltage drops can be tolerated, and with low precision op amps this greatly limits the overall resolution. The single-supply current monitor of Figure 30 has a resolution of 10 µA and is capable of monitoring 30 mA of current. This range can be adjusted by changing the current sense resistor R1. When measuring total system current, it may be necessary to include the supply current of the current monitor, which bypasses the current sense resistor, in the final result. This current can be measured and calibrated (together with the residual offset) by adjustment of the offset trim potentiometer, R2. This produces a deliberate temperature dependent offset. However, the supply current of the OP193 is also proportional to temperature, and the two effects tend to track. Current in R4 and R5, which also bypasses R1, can be adjusted via a gain trim. V+ The circuit of Figure 29 is a battery-powered voltage reference that draws only 17 µA of supply current. At this level, two AA alkaline cells can power this reference for more than 18 months. At an output voltage of 1.23 V @ 25°C, drift of the reference is only 5.5 µV/°C over the industrial temperature range. Load regulation is 85 µV/mA with line regulation at 120 µV/V. Design of the reference is based on the Brokaw bandgap core technique. Scaling of resistors R1 and R2 produces unequal currents in Q1 and Q2. The resulting ∆VBE across R3 creates a temperature-proportional voltage (PTAT) which, in turn, produces a larger temperature-proportional voltage across R4 and R5, V1. The temperature coefficient of V1 cancels (first order) the complementary to absolute temperature (CTAT) coefficient of VBE1. When adjusted to 1.23 V @ +25°C, output voltage tempco is at a minimum. Bandgap references can have start-up problems. With no current in R1 and R2, the OP193 is beyond its positive input range limit and has an undefined output state. Shorting Pin 5 (an offset adjust pin) to ground forces the output high under these circumstances and insures reliable startup without significantly degrading the OP193’s offset drift. REV. A –11– TO CIRCUIT UNDER TEST 3 ITEST 2 1 R1 1Ω R2 100kΩ R2 9.9kΩ 7 OP193 4 5 6 VOUT = 100mV/mA(ITEST) R5 100Ω R3 100kΩ Figure 30. Single-Supply Current Monitor OP193/OP293/OP493 A Single-Supply Instrumentation Amplifier Designing a true single-supply instrumentation amplifier with zero-input and zero-output operation requires special care. The traditional configuration, shown in Figure 31, depends upon amplifier A1’s output being at 0 V when the applied commonmode input voltage is at 0 V. Any error at the output is multiplied by the gain of A2. In addition, current flows through resistor R3 as A2’s output voltage increases. A1’s output must remain at 0 V while sinking the current through R3, or a gain error will result. With a maximum output voltage of 4 V, the current through R3 is only 2 µA, but this will still produce an appreciable error. R1 20k R2 1.98M +5V A1 1/2 OP293 –IN V+ R3 20k R4 1.98M +5V ISINK V+ A2 1/2 OP293 V– VOUT R1 20k R2 1.98M +5V V+ A1 1/2 OP293 R3 20k R4 1.98M –IN V– +5V 10k Q1 VN2222 +IN Q2 +5V V+ A2 1/2 OP293 V– VOUT Figure 32. An Improved Single-Supply, 0 VIN, 0 VOUT Instrumentation Amplifier A Low-Power, Temperature to 4–20 mA Transmitter V– +IN Figure 31. A Conventional Instrumentation Amplifier A simple temperature to 4–20 mA transmitter is shown in Figure 33. After calibration, this transmitter is accurate to ± 0.5°C over the –50°C to +150°C temperature range. The transmitter operates from +8 V to +40 V with supply rejection better than 3 ppm/V. One half of the OP293 is used to buffer the VTEMP pin, while the other half regulates the output current to satisfy the current summation at its noninverting input: IOUT + V TEMP × ( R 6 + R 7) R 2 × R10  R2 + R6 + R7  – V SET    R 2 × R10  One solution to this problem is to use a pull-down resistor. For example, if R3 = 20 kΩ, then the pull-down resistor must be less than 400 Ω. However, the pull-down resistor appears as a fixed load when a common-mode voltage is applied. With a 4 V common-mode voltage, the additional load current will be 10 mA, which is unacceptable in a low power application. Figure 32 shows a better solution. A1’s sink current is provided by a pair of N-channel FET transistors, configured as a current mirror. With the values shown, sink current of Q2 is about 340 µA. Thus, with a common-mode voltage of 4 V, the additional load current is limited to 340 µA versus 10 mA with a 400 Ω resistor. The change in output current with temperature is the derivative of the transfer function: ∆IOUT ∆T ∆V TEMP = ( R 6 + R 7) ∆T R 2 × R10 1N4002 R6 3kΩ SPAN TRIM V+ +8V TO +40V REF-43BZ VIN 2 VOUT 6 VTEMP 3 GND 4 3 R1 10kΩ 2 8 1/2 OP293 4 1 VTEMP R2 1kΩ R4 20kΩ 6 R7 5kΩ 1/2 OP293 7 R8 1kΩ 2N1711 R9 100kΩ R3 100kΩ R5 5kΩ VSET ZERO TRIM 5 ALL RESISTORS 1/4W, 5% UNLESS OTHERWISE NOTED R10 100Ω 1%, 1/2 W IOUT RLOAD Figure 33. Temperature to 4–20 mA Transmitter –12– REV. A OP193/OP293/OP493 From the formulas, it can be seen that if the span trim is adjusted before the zero trim, the two trims are not interactive, which greatly simplifies the calibration procedure. Calibration of the transmitter is simple. First, the slope of the output current versus temperature is calibrated by adjusting the span trim, R7. A couple of iterations may be required to be sure the slope is correct. Once the span trim has been completed, the zero trim can be made. Remember that adjusting the zero trim will not affect the gain. The zero trim can be set at any known temperature by adjusting R5 until the output current equals: VCONTROL 3 R2 200kΩ R3 100kΩ R4 200kΩ TRIANGLE OUT R6 200kΩ R8 200kΩ +5V R7 200kΩ C1 75nF R1 200kΩ +5V 2 8 A1 1/2 OP293 4 5 1 +5V R5 200kΩ 6 A2 1/2 OP293 7 SQUARE OUT   ∆IFS IOUT =   (TAMBIENT − TMIN ) + 4 mA  ∆TOPERATING  Table I shows the values of R6 required for various temperature ranges. Table I. R6 Values vs. Temperature CD4066 1 IN/OUT S1 2 OUT/IN CONT 13 VDD 14 +5V 3 OUT/IN S2 CONT 12 Temp Range 0°C to +70°C –40°C to +85°C –55°C to +150°C R6 10 kΩ 6.2 kΩ 3 kΩ 4 IN/OUT IN/OUT 11 5 CONT S3 OUT/IN 10 6 CONT S4 7 VSS OUT/IN 9 +5V A Micropower Voltage Controlled Oscillator IN/OUT 8 An OP293 in combination with an inexpensive quad CMOS analog switch forms the precision VCO of Figure 34. This circuit provides triangle and square wave outputs and draws only 50 µA from a single 5 V supply. A1 acts as an integrator; S1 switches the charging current symmetrically to yield positive and negative ramps. The integrator is bounded by A2 which acts as a Schmitt trigger with a precise hysteresis of 1.67 volts, set by resistors R5, R6, and R7, and associated CMOS switches. The resulting output of A1 is a triangle wave with upper and lower levels of 3.33 and 1.67 volts. The output of A2 is a square wave with almost rail-to-rail swing. With the components shown, frequency of operation is given by the equation: fOUT = VCONTROL (Volts) × 10 Hz/V but this can easily be changed by varying C1. The circuit operates well up to 500 Hz. Figure 34. Micropower Voltage Controlled Oscillator A Micropower, Single-Supply Quad Voltage Output 8-Bit DAC The circuit of Figure 35 uses the DAC8408 CMOS quad 8-bit DAC and the OP493 to form a single-supply quad voltage output DAC with a supply drain of only 140 µA. The DAC8408 is used in the voltage switching mode and each DAC has an output resistance (≈10 kΩ) independent of the digital input code. The output amplifiers act as buffers to avoid loading the DACs. The 100 kΩ resistors ensure that the OP493 outputs will swing to within 1/2 LSB of ground, i.e.: 1 1.23 V × = 3 mV 2 256 REV. A –13– OP193/OP293/OP493 +5V +5V A Single-Supply Micropower Quad Programmable-Gain Amplifier 3.6k 4 AD589 1.23V +5V 1 VDD 4 IOUT1A DAC A VREFA 1/4 DAC8408 2 3 11 R1 100kΩ 2 A 1/4 OP493 1 VOUTA The combination of the quad OP493 and the DAC8408 quad 8-bit CMOS DAC creates a quad programmable gain amplifier with a quiescent supply drain of only 140 µA (Figure 36). The digital code present at the DAC, which is easily set by a microprocessor, determines the ratio between the fixed DAC feedback resistor and the resistance that the DAC feedback ladder presents to the op amp feedback loop. The gain of each amplifier is: V OUT 256 = V IN n 5 IOUT2A/2B 6 DAC B VREFB 1/4 DAC8408 B 1/4 OP493 8 5 7 VOUTB R2 100kΩ where n equals the decimal equivalent of the 8-bit digital code present at the DAC. If the digital code present at the DAC consists of all zeros, the feedback loop will be open causing the op amp to saturate. The 10 MΩ resistors placed in parallel with the DAC feedback loop eliminates this problem with a very small reduction in gain accuracy. The 2.5 V reference biases the amplifiers to the center of the linear region providing maximum output swing. 6 IOUT1B 13 25 IOUT1C DAC C V REFC 1/4 DAC8408 C 1/4 OP493 27 12 14 VOUTC R3 100kΩ 24 IOUT2C/2D 9 DAC D V REFD 1/4 DAC8408 D 1/4 OP493 8 VOUTD R4 100kΩ 21 10 23 IOUT1D OP493 DAC DATA BUS PINS 9(LSB)–16(MSB) A/B R/W 17 18 19 20 DIGITAL CONTROL SIGNALS DAC8408ET DGND 28 DS1 DS2 Figure 35. Micropower Single-Supply Quad VoltageOutput 8-Bit DAC –14– REV. A OP193/OP293/OP493 C1 0.1µF VINA VDD 3 RFBA VREFA 2 R1 10MΩ 1 4 +5V IOUT1A DAC A 1/4 DAC8408 IOUT2A/2B 7 RFBB VREFB DAC B 1/4 DAC8408 4 2 A 1/4 OP493 3 1 VOUTA C2 0.1µF VIN B 5 11 8 R2 10MΩ 6 IOUT1B 6 B 1/4 OP493 7 VOUTB 5 C3 0.1µF VIN C 26 RFBC VREFC IOUT1C DAC C 1/4 DAC8408 IOUT2C/2D 22 RFBD 27 25 R3 10MΩ 9 C 1/4 OP493 10 24 8 VOUTC C4 0.1µF VI N D VREFD DAC D 1/4 DAC8408 21 R4 10MΩ 23 13 D 1/4 OP493 14 VOUTD IOUT1D 12 DAC DATA BUS PINS 9(LSB)–16(MSB) OP493 17 DIGITAL CONTROL SIGNALS 18 19 20 A/B R/W DS1 DS2 DGND 28 DAC8408ET +2.5V REFERENCE VOLTAGE Figure 36. Single-Supply Micropower Quad Programmable-Gain Amplifier REV. A –15– OP193/OP293/OP493 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 8-Lead SO (S Suffix) 8 8-Lead Epoxy DIP (P Suffix) 5 0.280 (7.11) 0.240 (6.10) 1 4 8 5 0.1574 (4.00) 0.1497 (3.80) PIN 1 PIN 1 1 4 0.2440 (6.20) 0.2284 (5.80) 0.430 (10.92) 0.348 (8.84) 0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.195 (4.95) 0.115 (2.93) 0.1968 (5.00) 0.1890 (4.80) 0.0098 (0.25) 0.0040 (0.10) 0.0500 (1.27) BSC 0.0688 (1.75) 0.0532 (1.35) 0.0192 (0.49) 0.0138 (0.35) 8° 0° 0.0196 (0.50) x 45° 0.0099 (0.25) 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.100 (2.54) BSC 0.0098 (0.25) 0.0075 (0.19) 0.0500 (1.27) 0.0160 (0.41) 0.130 (3.30) MIN SEATING PLANE 0.015 (0.381) 0.008 (0.204) 0.022 (0.558) 0.014 (0.356) 0.070 (1.77) 0.045 (1.15) 14-Lead Epoxy DIP (P Suffix) 16-Lead Wide Body SOL (S Suffix) 14 PIN 1 1 0.795 (20.19) 0.725 (18.42) 0.210 (5.33) MAX 0.160 (4.06) 0.115 (2.93) 0.022 (0.558) 0.014 (0.356) 8 0.280 (7.11) 0.240 (6.10) 7 0.325 (8.25) 0.300 (7.62) 0.060 (1.52) 0.015 (0.38) 0.195 (4.95) 0.115 (2.93) 16 9 0.2992 (7.60) 0.2914 (7.40) 0.4193 (10.65) 0.3937 (10.00) PIN 1 1 8 0.130 (3.30) MIN SEATING PLANE 0.015 (0.381) 0.008 (0.204) 0.4133 (10.50) 0.3977 (10.00) 0.1043 (2.65) 0.0926 (2.35) 0.0291 (0.74) x 45° 0.0098 (0.25) 0.100 (2.54) BSC 0.070 (1.77) 0.045 (1.15) 0.0118 (0.30) 0.0500 (1.27) 0.0040 (0.10) BSC 0.0192 (0.49) 0.0138 (0.35) 0.0125 (0.32) 0.0091 (0.23) 8° 0° 0.0500 (1.27) 0.0157 (0.40) –16– REV. A PRINTED IN U.S.A. C1994–18–1/95