03N70P

AP03N70P Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS 600/650/700V RDS(ON) ID 3.6Ω 3.3A Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D TO-220 S The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - /A/H 600/650/700 ± 30 3.3 2.1 13.2 45 0.36 2 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 85 3.3 3.3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200303032 AP03N70P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA VGS=0V, ID=1mA VGS=0V, ID=1mA ΔBVDSS/ΔTj Min. //A /H 600 650 700 2 - Typ. 0.6 2 11.4 3.1 4.2 8.4 6 17.7 5.9 600 45 4 Max. Units 3.6 4 10 100 ±100 V V V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ± 30V ID=3.3A VDS=480V VGS=10V VDD=300V ID=3.3A RG=10Ω,VGS=10V RD=91Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A. 3.Pulse width