1011LD110

1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55QZ-1 (Common Source) ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25°C (Pd) Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 300 W 75V ± 20V -65 to +150°C +200°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL BVdss Idss Igss Vgs(th) Vds(on) gFS θJC1 CHARACTERISTICS Drain-Source Breakdown Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On Voltage Forward Transconductance Thermal Resistance TEST CONDITIONS Vgs = 0V, Id = 10mA Vds = 32V, Vgs= 0V Vgs = 10V, Vds = 0V Vds = 10V, Id = 20 mA Vgs = 10V, Id = 1A Vds = 10V, Id = 1A MIN 75 5 1 6 0.3 1 0.6° TYP MAX UNITS V µA µA V V S ºC/W 3 FUNCTIONAL CHARACTERISTICS @ 25°C, Vds = 32V, Idq = 250mA GPS Pd ηd ψ NOTES: Common Source Power Gain Pulse Droop Drain Efficiency Load Mismatch Pulse width = 32 µs, LTDC=2% F=1030/1090 MHz, Pout = 110W F = 1030 MHz, Pout = 110W F = 1090 MHz, Pout = 110W 13 45 15 0.5 50 3:1 dB dB % 1. At rated output power and pulse conditions 2. Pulse Format 1: 32µs, 2% Long Term Duty Factor Rev. B - Apr 2004 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD110 Load Power vs. Drive Power 1030 MHz (typical) 120.0 100.0 80.0 PL (W) 60.0 40.0 20.0 0.0 0.00 PL (W) 120.0 100.0 80.0 60.0 40.0 20.0 0.0 0.00 Load Power vs. Drive Power 1090 MHz (typical) 1.00 PD (W ) 2.00 3.00 1.00 PD (W ) 2.00 3.00 Drain Efficiency vs. Load Power 1090 MHz (typical) 70.0 60.0 50.0 RL (dB) Return Loss vs. Load Power 1090 MHz (typical) 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 -12.0 n (%) 40.0 30.0 20.0 10.0 0.0 0.0 20.0 40.0 60.0 PL (W ) 80.0 100.0 120.0 0.0 20.0 40.0 60.0 PL (W ) 80.0 100.0 120.0 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD110 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1011LD110 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.