2N2857

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: The 2N2857 is a silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) ( Tcase Symbol Parameter Value Unit VCEO VCBO VEBO PD IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current 15 30 2.5 200 40 V V V mW mA Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.88 º C/mW Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N2857 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) E LECTRICAL STATIC Symbol BVCEO BVCBO BVEBO ICBO HFE Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 V, IE = 0 V) DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 V) 15 30 2.5 30 Value Typ. Max. .01 150 Unit V V V µA DYNAMIC Symbol fT NF Test Conditions Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 V, f = 100 MHz) Noise Figure (50 Ohms) (IC = 1.5 mAdc, VCE = 6 V, f = 500 MHz) Value Min. Typ. 1.6 5.5 Max. Unit GHz dB FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain Maximum Available Gain Insertion Gain IC = 12 mAdc, VCE = 10V, f = 500 MHz IC = 12 mAdc, VCE = 10V, f = 500 MHz IC = 12 mAdc, VCE = 10V, f = 500 MHz Value Min. 9.5 Typ. 13 13.5 10.5 Max. - Unit dB dB dB G U max MAG 2 |S21| Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N2857 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 12 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.457 0.291 0.233 0.212 0.184 0.173 0.192 0.165 0.261 0.083 ∠φ -44 -56 -60 -68 -76 -79 -89 -96 -121 149 S21 |S21| 12.49 8.06 5.3 3.88 3.36 2.97 2.39 1.89 2.72 1.27 ∠φ 122 101 89 80 80 69 61 57 60 39 S12 |S12| 0.012 0.018 0.024 0.032 0.037 0.043 0.044 0.055 0.068 0.064 ∠φ 63 55 81 55 49 46 44 43 29 18 S22 |S22| 0.823 0.712 0.728 0.723 0.711 0.717 0.72 0.731 0.746 0.749 ∠φ -23 -35 -46 -60 -73 -86 -100 -115 -131 -148 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N2857 . Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.