2N5109

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 50mA Maximum Unilateral Gain = 12dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The 2N5109 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3.0 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75º C (1) Derate above 25º C 2.5 20 Watts mW/ º C Note 1. Total Device dissipation at TA = 25º C is 1 Watt. Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO(sus) BVCER(sus) ICEO IEBO Test Conditions Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, IB = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Value Min. 20 40 Typ. Max. 20 100 Unit Vdc Vdc µA µA (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 15.0 Vdc) 5 40 120 - DYNAMIC Symbol fT Test Conditions Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Value Min. Typ. 1200 Max. Unit MHz Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz IC = 50 mAdc, VCE = 15Vdc, f = 200 MHz Value Min. 9.5 Typ. 12 11.2 10.5 Max. Unit dB dB dB G U max MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 50 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .082 .255 .288 .298 .368 .404 .462 .. .503 .593 .655 ∠φ 167 172 132 137 126 121 116 110 105 95 S21 |S21| 6.77 3.56 2.39 1.91 1.61 1.38 1.28 1.21 1.11 1.02 ∠φ 87 71 61 50 41 33 27 18 12 9.8 S12 |S12| .073 .135 .217 .271 .320 .390 .477 .513 .535 .604 ∠φ 79 71 70 62 55 54 48 38 33 35 S22 |S22| .347 .259 .247 .216 .172 .174 .163 .190 .246 .320 ∠φ -30 -35 -46 -76 -94 -115 -145 176 140 122 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 RF Low Power PA, LNA, and General Purpose RF Discrete Selector Guide GPE Freq (MHz) Efficiency (%) IC max (mA) Gu Max (dB) Ccb(pF) BVCEO IC max (mA) 3.5 20 30 30 1 1 3 1 1 1 2.6 12 15 25 15 15 12 15 15 15 1 15 15 12 16 2.2 17 400 400 400 50 40 150 30 50 35 100 200 200 30 50 40 200 200 Pout (watts) Freq (MHz) NF (dB) NF IC (mA) NF VCE GPE (dB) Package Device SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO-72 MA C R O X MA C R O X TO-39 SO-8 POWER MACRO POWER MACRO MA C R O X MA C R O X SO-8 POWER MACRO POWER MACRO MRF4427, R2 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF559 MRF559 2N3866A MRF555 MRF555T MRF559 MRF559 MRF8372,R1,R2 MRF557 MRF557T NPN NPN NPN NPN NPN NPN NPN 175 175 175 175 175 175 200 0.15 1 1.5 1.5 1.75 3 0.5 0.5 1 1 1.5 1.5 0.5 0.5 0.75 1.5 1.5 18 10 11.5 11.5 11.5 7.8 20 10 13 10 10 11 11 6.5 9.5 8 8 8 60 50 60 50 50 50 65 60 45 45 50 50 70 65 55 55 55 12 12 12.5 12.5 12.5 12.5 6 7.5 12.5 28 28 12.5 12.5 7.5 12.5 12.5 12.5 12.5 20 400 20 400 16 500 16 500 16 330 18 1000 12 50 16 16 30 30 16 16 16 16 16 16 16 150 150 400 400 400 400 150 150 200 400 400 TO-39 TO-39 SO-8 TO-72 TO-72 TO-39 TO-72 TO-72 MACRO T MACRO T SO-8 MACRO X Macro TO-72 TO-72 MACRO X TO-39 2N5109 MRF5943C NPN NPN 200 200 200 200 300 300 450 450 500 500 500 500 500 500 500 500 500 3 3.4 3.4 4.5 5.5 7.5 1.5 5 1.9 2 2 2 2.4 2.5 2.5 2.5 3 10 30 30 1.5 50 50 5 2 2 10 50 50 2 2 5 50 90 15 15 15 6 6 15 6 5 5 10 10 10 10 5 10 10 15 15 11 15.5 14 15 11 GN (dB) Type 12 11.4 15 17 13 5.5 11 14 1200 1000 1300 900 1600 4600 4000 1400 MRF5943, R1, R2 NPN 2N5179 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 NPN NPN NPN NPN NPN NPN NPN 16.5 5000 14.5 500 NPN 512 NPN 512 NPN 400 NPN 470 NPN 470 NPN 870 NPN 870 NPN 870 NPN 870 NPN 870 MRF5812, R1, R2 NPN MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 NPN NPN NPN NPN NPN NPN 17.8 5000 15 18 20 15 5000 5000 1300 4500 MRF3866, R1, R2 NPN 400 17.8 5000 14.5 4500 MACRO X MACRO X MACRO T MACRO T MRF951 MRF571 BFR91 BFR90 NPN 1 0 0 0 NPN 1 0 0 0 NPN 1 0 0 0 NPN 1 0 0 0 1.3 1.5 2.5 3 5 10 2 2 6 6 5 10 14 10 8 10 17 11 8000 8000 5000 Ftau (MHz) GPE VCC Package Device BVCEO Type 0.45 1 1 1 10 100 10 12 15 70 35 30 12.5 5 0 0 0 TO-39 TO-39 MRF545 MRF544 PNP NPN 14 1400 2 70 400 70 400 13.5 1500 RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options 1 1 2 4 3 3 3 1 1 8 Macro T Macro X Power Macro SO-8 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5109 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.