2N6304

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6304 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon RF NPN, TO-72, UHF general purpose Low Noise Transistor Noise Figure = 5.0 dB (typ) @ f = 450 MHz High FT - 1.4 GHz (min) @ IC = 10 mAdc Maximum Available Gain = 14 dB (min) @ f = 500 MHz 2 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: The 2N6304 is a silicon NPN transistor designed primarily for use in high gain, low noise general-purpose UHF amplifiers. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 3.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6304 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCB = 5.0 Vdc, IE = 0 Vdc) Value Min. 15 30 3.5 Typ. Max. 10 Unit Vdc Vdc Vdc nAdc (on) HFE DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) 25 250 - DYNAMIC Symbol fT NF Test Conditions Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (50 Ohms) (IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz) Collector-Base Capacitance (VCB = 10Vdc, IE = 0, f = 1 MHz) Value Min. 1.4 Typ. 5.0 0.8 1.0 Max. Unit GHz dB pF CCB Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6304 FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 14 mAdc, VCE = 10 Vdc, f = 500 MHz IC = 14 mAdc, VCE = 10 Vdc, f = 500 MHz IC = 14 mAdc, VCE = 10 Vdc, f = 500 MHz Value Min. 9 Typ. 14 13 10 Max. Unit dB dB dB G U max MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.430 0.269 0.212 0.192 0.164 0.153 0.170 0.146 0.226 0.075 ∠φ -46 -58 -61 -69 -76 -78 -87 -94 -119 152 S21 |S21| 13.18 8.27 5.35 3.85 3.34 2.92 2.34 1.85 2.66 1.26 ∠φ 119 97 86 77 77 66 58 55 56 36 S12 |S12| 0.013 0.019 0.024 0.032 0.036 0.042 0.042 0.052 0.065 0.062 ∠φ 61 50 55 50 45 42 40 40 25 13 S22 |S22| 0.875 0.773 0.749 0.735 0.72 0.725 0.729 0.713 0.757 0.763 ∠φ -25 -38 -50 -63 -76 -89 -104 -120 -136 -153 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6304 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.