AP4936M

AP4936M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement D1 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 25V 37mΩ 5.8A ▼ Fast Switching SO-8 G1 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 25 ± 20 5.8 4.6 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 20020305 AP4936M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.03 6.5 6.9 1.2 4.5 6 17.5 14.5 5.5 218 155 63 Max. Units 37 60 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=5A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= ± 20V ID=5A VDS=16V VGS=5V VDS=16V ID=5A RG=3.3Ω,VGS=10V RD=3.2Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=1.7A, VGS=0V Min. - Typ. - Max. Units 1.67 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width