APL1001P

D S G D S G S SO 2 T- 27 APL1001J 1000V 18.0A 0.60W ISOTOP® "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless otherwise specified. APL1001J UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 18 72 ±30 520 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage 1 and Inductive Current Clamped Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Y R A IN IM L E R P 4.16 -55 to 150 300 MIN TYP Volts Watts W/°C °C MAX UNIT Volts Amps Ohms µA 1000 18 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) 2 (VGS = 10V, 0.5 ID [Cont.]) 0.60 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA Volts THERMAL CHARACTERISTICS Symbol RQJC RQCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT °C/W 0.24 0.06 050-5904 Rev A 3-2000 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6W MIN TYP MAX APL1001J UNIT 6100 780 285 14 14 60 14 ns pF SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic SOA1 Safe Operating Area Test Conditions / Part Number VDS = 400 V, IDS = 0.813A, t = 20 sec., TC = 60°C MIN TYP MAX UNIT Watts 300 375 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 Z JC, THERMAL IMPEDANCE (°C/W) q D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) 050-5904 Rev A 3-2000 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 Gate 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058