500V 58A 0.090Ω
B2
APL502B2 APL502L
LINEAR MOSFET
T-MAX™
TO-264
Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
L
• Higher FBSOA
D
G S
All Ratings: TC = 25°C unless otherwise specified.
APL502B2-L UNIT Volts Amps
500 58 232 ±30 ±40 730 5.84 -55 to 150 300 58 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 58 0.09 25
(VDS > ID(ON) x R DS(ON) Max, VGS = 12V)
2
Drain-Source On-State Resistance
(VGS = 12V, 29A)
Ohms µA
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250 ±100 2 4
nA
8-2003 050-5896 Rev D
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 250V ID = 29A @ 25°C RG = 0.6Ω MIN TYP
APL502B2-L
MAX UNIT
7485 1290 617 13 27 56 16
9000 1810 930 26 54 84 20
ns pF
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
.17 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18 0.16
ZΘJC, THERMAL IMPEDANCE (°C/W)
0.9
0.14 0.12 0.10 0.5 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
0.7
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
RC MODEL Junction temp. ( ”C) 0.0602 Power (Watts) 0.109 0.305F 0.0158F
8-2003
Case temperature
050-5896 Rev D
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
120 VGS=10V, 15 V
ID, DRAIN CURRENT (AMPERES)
APL502B2-L
120 VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
100 8V 80 7.5 V 60 7V 40 6.5 V 6V 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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