APL602B2

600V 49A 0.125Ω APL602B2 APL602L LINEAR MOSFET Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). B2 T-MAX™ TO-264 L • Popular T-MAX™ or TO-264 Package • Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Higher FBSOA D G S All Ratings: TC = 25°C unless otherwise specified. APL602B2-L UNIT Volts Amps 600 49 196 ±30 ±40 730 5.84 -55 to 150 300 49 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 600 49 0.125 25 (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) 2 Drain-Source On-State Resistance (VGS = 12V, 24.5A) Ohms µA Zero Gate Voltage Drain Current (VDS = 600v, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 250 ±100 2 4 nA 8-2003 050-5894 Rev E Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 15V VDD = 300V ID = 49A @ 25°C RG = 0.6Ω MIN TYP APL602B2-L MAX UNIT 7485 1290 617 13 27 56 16 9000 1810 930 26 54 84 20 ns pF THERMAL CHARACTERISTICS Symbol Characteristic RθJC RθJA Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W .17 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 2.50mH, R = 25Ω, Peak I = 49A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.16 ZΘJC, THERMAL IMPEDANCE (°C/W) 0.9 0.14 0.12 0.10 0.5 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.7 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 RC MODEL Junction temp. ( ”C) 0.0575 Power (Watts) 0.113 0.358F 0.0187F 8-2003 Case temperature 050-5894 Rev E FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves 120 VGS=10V, 15 V ID, DRAIN CURRENT (AMPERES) APL602B2-L 120 VGS=10, 15V 100 8V 80 7.5 V 60 7V 40 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 80 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @