APT1001RBVFR

APT1001RBVFR APT1001RSVFR 1000V 11A 1.00Ω POWER MOS V ® FREDFET BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR • Avalanche Energy Rated • Faster Switching 3 • Lower Leakage • FAST RECOVERY BODY DIODE G D •TO-247 or Surface Mount D PAK Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 S All Ratings: TC = 25°C unless otherwise specified. APT1001RBVFR_SVFR UNIT Volts Amps 1000 11 44 ±30 ±40 278 2.22 -55 to 150 300 11 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 1.00 250 1000 ±100 2 4 (VGS = 10V, ID = 5.5A) Ohms µA nA Volts 5-2004 050-5596 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1001RBVFR_SVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 11A @ 25°C VGS = 15V VDD = 500V ID = 11A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT 3050 280 135 150 16 70 12 11 55 12 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 MIN TYP MAX UNIT Amps Volts V/ns ns µC Amps 11 44 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -11A) d v/ 5 dt t rr Q rr IRRM Reverse Recovery Time (IS = -11A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -11A, di/dt = 100A/µs) Peak Recovery Current (IS = -11A, di/dt = 100A/µs) 200 350 0.7 1.5 11 16 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.45 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 20.0mH, R = 25Ω, Peak I = 11A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID11A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.1 0.05 0.2 0.1 0.05 0.02 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 5-2004 0.01 0.005 0.01 SINGLE PULSE 050-5596 Rev C 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 10 Typical Performance Curves 20 VGS=6V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 20 APT1001RBVFR_SVFR VGS=15V VGS=6V & 10V 5V ID, DRAIN CURRENT (AMPERES) 16 16 12 4.5V 8 12 4.5V 8 4 4V 0 3.5V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @