APT10021JLL

APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 ® R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT10021JLL UNIT Volts Amps 1000 37 148 ±30 ±40 694 5.56 -55 to 150 300 37 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 0.210 100 500 ±100 3 5 (VGS = 10V, 18.5A) Ohms µA nA Volts 4-2004 050-7017 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10021JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 37A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 37A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 667V, VGS = 15V ID = 37A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 667V, VGS = 15V ID = 37A, RG = 5Ω MIN TYP MAX UNIT 9750 1615 335 395 47 260 29 22 80 20 1560 930 2515 1250 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions CContinuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 37 148 1.3 1300 38.0 10 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 37A) Reverse Recovery Time (IS = -37A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -37A, dl S/dt = 100A/µs) Peak Diode Recovery d v/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 5.26mH, RG = 25Ω, Peak IL = 37A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID37A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 10 0.3 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.9 0.7 050-7017 Rev C 4-2004 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves RC MODEL Junction temp. ( ”C) 0.0244 0.0731F 100 90 ID, DRAIN CURRENT (AMPERES) APT10021JLL VGS =15 &10V 8V 7V 6.5 6V 80 70 60 50 40 30 20 10 0 Power (Watts) 5.5V 0.133 0.701F 0.0218 Case temperature 20.065F 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 180 160 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @