APT10025JVFR
1000V 34A 0.250Ω
S G D S
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP ®
2 T-
27
"UL Recognized"
• Fast Recovery Body Diode • Lower Leakage • Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• 100% Avalanche Tested • Popular SOT-227 Package
G
D
S
All Ratings: TC = 25°C unless otherwise specified.
APT10025JVFR UNIT Volts Amps
1000 34 136 ±30 ±40 700 5.6 -55 to 150 300 34 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 34 0.250 250 1000 2 4 ±100
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA
11-2004 050-5601 Rev B
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA)
nA Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10025JVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 0.6ý MIN TYP MAX UNIT pF
15000 1360 710 660 51 250 22 20 97 16
18000 1900 1065 990 75 375 44 40 145 32
ns nC
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns
34 136 1.3 18
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -ID [Cont.])
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs)
300 600 1.8 7.4 16 30
µC
Amps
THERMAL / PACKAGE CHARACTERISTICS
Symbol RθJC RθJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT °C/W Volts
0.18 40 2500 13
lb•in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 6.23mH, R = 25ý, Peak I = 34A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0ý, dt
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.1 0.05
D=0.5 0.2 0.1
0.01 0.005
0.05 0.02 0.01 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-5601 Rev B
11-2004
0.001 0.0005 10-5 10-4
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT10025JVFR
80 VGS=6V, 7V, 10V & 15V
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
80 VGS=6V, 7V, 10V & 15V
60 5V
60 5V 40
40
20
4.5V
20
4.5V
4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.20
V
GS
0
0
100
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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