APT10026JFLL

APT10026JFLL 1000V 30A 0.260Ω POWER MOS 7 ® R FREDFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO ISOTOP ® 2 T- 27 "UL Recognized" D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package G S All Ratings: TC = 25°C unless otherwise specified. APT10026JFLL UNIT Volts Amps 1000 30 120 ±30 ±40 595 4.76 -55 to 150 300 30 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 0.260 100 500 ±100 3 5 (VGS = 10V, 15A) Ohms µA nA Volts 12-2003 050-7114 Rev A Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT10026JFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 38A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 667V, VGS = 15V ID = 38A, RG = 3Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 667V VGS = 15V ID = 38A, RG = 3Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 7114 1268 224 267 34 173 17 8 39 9 1196 713 2014 971 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 30 120 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -38A) 5 d v/ t rr Reverse Recovery Time (IS = -38A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -38A, di/dt = 100A/µs) Peak Recovery Current (IS = -38A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 310 625 2.0 6.0 15 26 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.21 40 4 Starting Tj = +25°C, L = 7.11mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -30A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.15 0.7 12-2003 0.5 0.10 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7114 Rev A 0 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 90 80 Junction temp. (°C) APT10026JFLL 15 &10V 7.5V 7V ID, DRAIN CURRENT (AMPERES) RC MODEL 70 60 50 40 6V 30 20 5.5V 10 0 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V GS 0.0492 0.0273F 6.5V Power (watts) 0.142 0.469F 0.0189 Case temperature. (°C) 44.2F RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @