APT10030L2VR_04

APT10030L2VR 1000V 33A 0.300Ω POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated G D S All Ratings: TC = 25°C unless otherwise specified. APT10030L2VR UNIT Volts Amps 1000 33 132 ±30 ±40 833 6.66 -55 to 150 300 33 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 0.300 25 250 ±100 2 4 (VGS = 10V, ID = 16.5A) Ohms µA nA Volts 5-2004 050-5990 Rev B Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10030L2VR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 33A @ 25°C VGS = 15V VDD = 500V ID = 33A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT 10600 1000 500 585 55 265 14 16 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 33 132 1.3 1150 31 10 (Body Diode) (VGS = 0V, IS = - 33A) Reverse Recovery Time (IS = -33A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -33A, dl S /dt = 100A/µs) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 5.88mH, RG = 25Ω, Peak IL = 33A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 0.5 Note: PDM t1 t2 050-5990 Rev B 5-2004 SINGLE PULSE 10-3 10-2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 80 70 60 50 40 30 VGS =15, 10, 6.5 & 6V APT10030L2VR 5.5V RC MODEL Junction temp. (°C) 0.0545 Power (watts) 0.0957 Case temperature. (°C) 0.922F 0.0487F 5V 4.5V 20 10 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 0 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 120 ID, DRAIN CURRENT (AMPERES) 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @