APT10078SLL

1000V 14A 0.780Ω APT10078BLL APT10078SLL POWER MOS 7 ® R MOSFET TO-247 D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified. APT10078BLL_SLL UNIT Volts Amps 1000 14 56 ±30 ±40 403 3.23 -55 to 150 300 14 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1000 0.780 100 500 ±100 3 5 (VGS = 10V, ID = 7A) Ohms µA nA Volts 4-2004 050-7003 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10078BLL_SLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 14A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 14A @ 25°C 6 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 667V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 667V, VGS = 15V ID = 14A, RG = 3Ω ID = 14A, RG = 3Ω MIN TYP MAX UNIT pF 2525 430 75 95 12 60 9 8 30 9 355 75 740 95 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 14 56 1.3 692 7.87 10 (Body Diode) (VGS = 0V, IS = - ID14A) Reverse Recovery Time (IS = -ID14A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID14A, dl S /dt = 100A/µs) Peak Diode Recovery d v/ 5 dt V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 13.27mH, RG = 25Ω, Peak IL = 14A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-14A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.9 0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note: PDM t1 t2 050-7003 Rev C 4-2004 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 30 VGS =15 & 8V 25 20 15 10 APT10078BLL_SLL 7V 6.5V 0.0258 0.00295F Power (watts) 0.107 0.0114F 6V 0.177 Case temperature. (°C) 0.174F 5.5V 5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @