APT10090BFLL

APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω BFLL D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT10090 UNIT Volts Amps 1000 12 48 ±30 ±40 298 2.4 -55 to 150 300 12 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 1000 12 0.90 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 6A) Ohms µA nA Volts 7-2003 050-7041 Rev C Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT10090BFLL - SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 12A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 12A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 670V, VGS = 15V ID = 12A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 670V VGS = 15V ID = 12A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 1969 332 55 71 12 47 9 5 23 4 334 77 672 100 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 12 48 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -ID 12A) 5 d v/ t rr Reverse Recovery Time (IS = -ID 12A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 12A, di/dt = 100A/µs) Peak Recovery Current (IS = -ID 12A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 200 350 0.7 2.0 10 15 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.42 40 4 Starting Tj = +25°C, L = 16.8mH, RG = 25Ω, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID12A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery measured in accordance wtih JEDEC standard JESD24-1. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.9 0.7 0.5 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7041 Rev C 7-2003 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 30 APT10090BFLL - SFLL RC MODEL Junction temp. ( ”C) 0.164 Power (Watts) 0.257 Case temperature 0.125F 0.00592F ID, DRAIN CURRENT (AMPERES) 25 20 VGS =15,10V& 7.5V 7V 6.5 15 6V 10 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 5 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 30 TJ = -55°C ID, DRAIN CURRENT (AMPERES) NORMALIZED TO = 10V @ I = 6A D 25 1.30 1.20 20 15 TJ = +125°C TJ = +25°C 1.10 VGS=10V VGS=20V 10 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @