1000V 12A 0.900Ω
APT10090BLL APT10090SLL
BLL D3PAK
TO-247
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT10090 UNIT Volts Amps
1000 12 48 ±30 ±40 298 2.4 -55 to 150 300 12 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) R DS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 12 0.90 100 500 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 6A)
Ohms µA nA Volts
7-2003 050-7002 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10090BLL - SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 12A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 12A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 670V, VGS = 15V ID = 12A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 670V VGS = 15V ID = 12A, RG = 5Ω
MIN
TYP
MAX
UNIT
1969 332 55 71 12 47 9 5 23 4 334 77 672 100 µJ ns
nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
12 48 1.3 700 9.0 10
(Body Diode) (VGS = 0V, IS = - ID12A)
Reverse Recovery Time (IS = -ID12A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID12A, dl S/dt = 100A/µs) Peak Diode Recovery
d v/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.42 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 16.81mH, RG = 25Ω, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID12A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery measured in accordance wtih JEDEC standard JESD24-1. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.40 0.35 0.30 0.25
0.9
0.7
0.5 0.20 0.15 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.3
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7002 Rev C
7-2003
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
30
APT10090BLL - SLL
ID, DRAIN CURRENT (AMPERES)
RC MODEL Junction temp. ( ”C) 0.164 Power (Watts) 0.257 Case temperature 0.125F 0.00592F
25 20 VGS =15,10V& 7.5V 7V 6.5 15 6V 10 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V
GS
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 30 TJ = -55°C
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO = 10V @ I = 6A
D
25
1.30 1.20
20 15
TJ = +125°C TJ = +25°C
1.10
VGS=10V VGS=20V
10
VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @
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