APT10M09B2VFR APT10M09LVFR
100V 100A 0.009Ω
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VFR
T-MAX™
TO-264
LVFR
• T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current
1 6
• Avalanche Energy Rated • FAST RECOVERY BODY DIODE
G S D
All Ratings: TC = 25°C unless otherwise specified.
APT10M09B2VFR_LVFR UNIT Volts Amps
100
@ TC = 25°C
100 400 ±30 ±40 625 5.00 -55 to 150 300 100 50 3000
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1 4
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
100 0.009 100 500 ±100 2 4
(VGS = 10V, ID = 50A)
Ohms µA nA Volts
5-2004 050-5905 Rev A
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 80V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10M09B2VFR_LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 50V ID = 100A @ 25°C VGS = 15V VDD = 50V ID = 100A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT
9875 3940 1470 350 60 180 18 36 50 9
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns µC Amps
100 400 1.3 8
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -100A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -100A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -100A, di/dt = 100A/µs) Peak Recovery Current (IS = -100A, di/dt = 100A/µs)
190 370 0.4 1.7 9 15
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.60mH, R = 25Ω, Peak I = 100A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 200A/µs VR ≤100V TJ ≤ 150°C 6 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.20
0.9 0.7 0.5 0.3
0.15
5-2004
0.10
Note:
PDM t1 t2
050-5905 Rev A
0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (°C) RC MODEL
350 300 8V 250 200 150 100 50 0
APT10M09B2VFR_LVFR
VGS =15V, 10V, & 9V
0.0302
0.00809F
Power (watts)
7V
0.0729
0.0182F
6V
0.0955 Case temperature. (°C)
0.264F
5V 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO = 10V @ 50A V
GS
120 100 80 60 TJ = -55°C 40 TJ = +25°C 20 0 TJ = +125°C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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