APT11044B2FLL

APT11044B2FLL APT11044LFLL 1100V 26A 0.440Ω POWER MOS 7 ® R FREDFET T-MAX™ Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE TO-264 D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT11044JFLL UNIT Volts Amps 1100 26 104 ±30 ±40 694 5.56 -55 to 150 300 26 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1100 0.440 250 1000 ±100 3 5 (VGS = 10V, 13A) Ohms µA nA Volts 11-2003 050-7177 Rev A Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT11044B2FLL - LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 22A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 22A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 733V, VGS = 15V ID = 22A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 733V VGS = 15V ID = 22A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 5643 828 153 180 32 111 18 9 45 14 961 581 1812 899 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 26 104 1.3 10 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -26A) 5 d v/ t rr Reverse Recovery Time (IS = -26A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -26A, di/dt = 100A/µs) Peak Recovery Current (IS = -26A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 320 650 3.60 9.72 16.5 24.7 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.18 40 4 Starting Tj = +25°C, L = 8.88mH, RG = 25Ω, Peak IL = 26A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -26A di/dt ≤ 700A/µs VR ≤ 1100 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 10-3 10-2 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7177 Rev A 11-2003 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 50 ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL APT11044B2FLL - LFLL 45 40 35 30 25 20 15 10 5 0 5.5V 5V 6V VGS =15 & 10V 6.5V 7V 0.0271 0.00899F Power (watts) 0.0656 0.0202F 0.0859 Case temperature. (°C) 0.293F FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 70 ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @