APT11N80KC3

APT11N80KC3 800V 11A 0.450Ω Super Junction MOSFET TO-220 C OLMOS O Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-220 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt G D S D G S All Ratings: TC = 25°C unless otherwise specified. APT11N80KC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 800 11 33 ±20 ±30 156 1.25 -55 to 150 260 50 11 0.2 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/°C °C V/ns Amps mJ IAR EAR EAS Single Pulse Avalanche Energy 470 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.39 0.5 0.45 20 200 ±100 2.1 3 3.9 (VGS = 10V, ID = 7.1A) Ohms µA nA Volts Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680µA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 050-7135 Rev A 4-2004 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT11N80KC3 Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 11A @ 25°C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 11A @ 25°C RG = 7.5Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 11A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 11A, RG = 5Ω MIN TYP MAX UNIT 1585 770 18 60 8 30 25 15 70 7 165 50 305 65 MIN TYP MAX UNIT Amps Volts ns µC V/ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 80 10 ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 11 33 1 550 10 6 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 11A) 1.2 Reverse Recovery Time (IS = 11A, dl S/dt = -100A/µs, VR = 640V) Reverse Recovery Charge (IS = 11A, dl S/dt = -100A/µs, VR = 640V) Peak Diode Recovery d v/ dt 5 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.80 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.90 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 194mH, RG = 25Ω, Peak IL = 2.2A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID 11A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.9 0.7 4-2004 0.3 050-7135 Rev A 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 30 ID, DRAIN CURRENT (AMPERES) APT11N80KC3 25 20 15 10 5 0 VGS =15 & 10V 6.5V 6V 5.5V 5V 4.5V 4V RC MODEL Junction temp. (°C) 0.345 Power (watts) 0.455 Case temperature 0.101 0.00375 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 45 40 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @