APT12045L2VFR

APT12045L2VFR 1200V 28A 0.450Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. TO-264 Max • Faster Switching • Lower Leakage • Avalanche Energy Rated • TO-264 MAX G FREDFET D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT12045L2VFR UNIT Volts Amps 1200 28 112 ±30 ±40 833 6.67 -55 to 150 300 28 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1200 0.450 250 1000 ±100 2 4 (VGS = 10V, ID= 14A) Ohms µA nA Volts 4-2004 050-5844 Rev A Zero Gate Voltage Drain Current (VDS = 1200, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT12045L2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 28A @ 25°C VGS = 15V VDD = 600V ID = 28A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF 11370 950 495 605 42 310 16 15 85 14 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns µC Amps 28 112 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -ID 28A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID 28A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 28A, di/dt = 100A/µs) Peak Recovery Current (IS = -ID 28A, di/dt = 100A/µs) 310 625 2 6 14 24 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 8.16mH, R = 25Ω, Peak I = 28A temperature. j G L 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 I ≤ I [Cont.], di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-5844 Rev A 4-2004 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) RC MODEL 60 50 APT12045L2VFR VGS =15V, 10V, 8V & 6V 5.5 5V Junction temp. (°C) 0.0367 0.0627F 40 30 20 10 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V Power (watts) 0.0923 0.761F 4.5V 0.0215 Case temperature. (°C) 50.8F 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @