APT1204R7SFLL

APT1204R7BFLL APT1204R7SFLL POWER MOS 7 ® 1200V 3.5A 4.700Ω D3PAK TO-247 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified. APT1204R7BFLL_SFLL UNIT Volts Amps 1200 3.5 14 ±30 ±40 135 1.08 -55 to 150 300 3.5 10 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 425 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1200 4.70 250 1000 ±100 3 5 (VGS = 10V, ID = 1.75A) Ohms µA nA Volts 3-2004 050-7390 Rev A Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1204R7 BFLL_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 3.5A @ 25°C VGS = 15V VDD = 600V ID = 3.5A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT 716 132 36 31 4 21 7 2 20 24 900 200 60 50 5 40 14 4 30 50 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns µC Amps 3.5 14 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -ID 3.5A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -ID 3.5A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 3.5A, di/dt = 100A/µs) Peak Recovery Current (IS = -ID 3.5A, di/dt = 100A/µs) 250 515 .5 1.1 8.3 11.5 THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.90 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 69.39mH, RG = 25Ω, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID3.5A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 D=0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-7390 Rev A 3-2004 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 8 7 6 5 4 3 2 1 0 APT1204R7 BFLL_SFLL VGS =15,10 & 8V 7V 6.5V Graph Deleted 6V 5.5V 5V FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 10 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @