APT12057JFLL
1200V 19A 0.570Ω
POWER MOS 7
®
R
FREDFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE
APT12057JFLL
D G S
All Ratings: TC = 25°C unless otherwise specified.
UNIT Volts Amps
1200 19 76 ±30 ±40 520 4.17 -55 to 150 300 19 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1200 0.570 250 1000 ±100 3 5
(VGS = 10V, 9.5A)
Ohms µA nA Volts
7-2004 050-7085 Rev C
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT12057JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 19A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 19A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 800V VGS = 15V ID = 19A, RG = 5Ω ID = 19A, RG = 5Ω RG = 0.6Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5155 770 130 185 24 120 11 18 36 24 725 365 1200 450
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns µC Amps
19 76 1.3 18
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -19A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -19A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -19A, di/dt = 100A/µs) Peak Recovery Current (IS = -19A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
320 650 2.0 7.0 13 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.25
ZθJC, THERMAL IMPEDANCE (°C/W)
4 Starting Tj = +25°C, L = 16.62mH, RG = 25Ω, Peak IL = 19A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -19A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
050-7085 Rev C
7-2004
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
50
ID, DRAIN CURRENT (AMPERES)
Junction temp. (°C) RC MODEL
APT12057JFLL
45 40 35 30 25 20 15 10 5 0 5.5V 5V 6.5V VGS =15,10 & 8V 7V
0.0528
0.0203F
Power (watts)
0.0651
0.173F
6V
0.123 Case temperature. (°C)
0.490F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V NORMALIZED TO = 10V @ I = 9.5A
D
80
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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