APT12057LFLL

APT12057B2FLL APT12057LFLL POWER MOS 7 ® 1200V 22A 0.570Ω B2FLL R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 T-MAX™ TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT12057B2FLL_LFLL UNIT Volts Amps 1200 22 88 ±30 ±40 690 5.52 -55 to 150 300 22 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 1200 0.570 250 1000 ±100 3 5 (VGS = 10V, 11A) Ohms µA nA Volts 7-2004 050-7083 Rev C Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT12057 B2FLL_LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 600V ID = 22A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 600V ID = 22A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 800V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 800V VGS = 15V ID = 22A, RG = 5Ω ID = 22A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 5155 770 130 185 24 120 11 20 36 21 865 420 1390 530 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 22 88 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -22A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -22A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -22A, di/dt = 100A/µs) Peak Recovery Current (IS = -22A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 320 650 18 7 28 220 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 12.39mH, RG = 25Ω, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -22A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7083 Rev C 7-2004 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 50 45 40 35 30 25 20 15 10 5 0 APT12057 B2FLL_LFLL VGS =15,10 & 8V 7V 6.5V 0.0272 0.0090F Power (watts) 0.0565 0.0202F 6V 0.0860 Case temperature. (°C) 0.293F 5.5V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V NORMALIZED TO = 10V @ I = 11A D 80 ID, DRAIN CURRENT (AMPERES) 70 60 50 40 30 20 10 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @