APT13GP120S

TYPICAL PERFORMANCE CURVES ® 1200V APT13GP120B_S(G) APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® B TO -2 47 D3PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 600V, 10A • 50 kHz operation @ 600V, 16A • RBSOA Rated C G E S G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT13GP120B_S(G) UNIT Volts 1200 ±30 41 20 50 50A @ 960V 250 -55 to 150 300 Amps Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 1200 3 4.5 3.3 3.0 500 2 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7412 APT Website - http://www.advancedpower.com Rev E 1-2006 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) µA 3000 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT13GP120B_S(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 13A TJ = 150°C, R G = 5Ω, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 1145 90 15 7.5 55 8 26 50 9 12 28 34 115 330 165 9 12 70 200 225 710 840 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 13A RG = 5Ω Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V I C = 13A RG = 5Ω µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .50 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 1-2006 Rev E 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7412 TYPICAL PERFORMANCE CURVES 40 35 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 TJ = 125°C TJ = 25°C TJ = -55°C APT13GP120B_S(G) 30 25 20 15 10 5 0 TJ = 125°C TJ = 25°C TJ = -55°C 40 IC, COLLECTOR CURRENT (A) FIGURE 1, Output Characteristics(TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST