APT15GT120BRG

TYPICAL PERFORMANCE CURVES ® APT15GT120BR APT15GT120BRG* APT15GT120BR(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • RBSOA and SCSOA Rated • High Freq. Switching to 50KHz • Ultra Low Leakage Current G TO -2 47 C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT15GT120BR(G) UNIT Volts 1200 ±30 36 18 45 45A @ 960V 250 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1mA) Gate Threshold Voltage (VCE = VGE, I C = 0.6mA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 2.5 2 2 5.5 3.0 3.8 6.5 3.6 100 TBD 480 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Volts I CES I GES µA nA 12-2005 050-6266 Rev B Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT15GT120BR(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 15A TJ = 150°C, R G = 5Ω, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 1070 100 65 10 105 10 60 45 10 11 85 35 585 800 260 10 11 95 42 590 1440 340 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 800V VGE = 15V I C = 15A RG = 5Ω Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V I C = 15A RG = 5Ω µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .50 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-6266 Rev B 12-2005 TYPICAL PERFORMANCE CURVES 45 40 IC, COLLECTOR CURRENT (A) V GE = 15V 60 50 APT15GT120BR(G) 15V 14V 13V 35 30 25 20 15 10 5 0 TJ = -55°C IC, COLLECTOR CURRENT (A) 40 12V 30 11V 20 10 0 10V 9V 8V TJ = 25°C TJ = 125°C 45 40 IC, COLLECTOR CURRENT (A) FIGURE 1, Output Characteristics(TJ = 25°C) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST