APT20GN60BG

TYPICAL PERFORMANCE CURVES ® APT20GN60B APT20GN60BG* APT20GN60B(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. G C E TO -2 47 • • • • • 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT20GN60B(G) UNIT Volts 600 ±30 40 24 60 60A @ 600V 136 -55 to 175 300 Amps @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 1.7 25 2 6.5 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor µA nA Ω 7-2005 050-7614 Rev A TBD 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT20GN60B(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 20A TJ = 175°C, R G = 4.3Ω 7, MIN TYP MAX UNIT pF V nC 1110 50 35 9.5 120 10 70 VGE = VGE = 15V Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 600V TJ = 150°C, R G = 4.3Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 20A VCC = 360V, VGE = 15V, 60 6 9 10 140 95 230 260 580 9 10 160 130 250 450 750 A µs ns RG = 4.3Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 20A ns Turn-on Switching Energy (Diode) 66 TJ = +125°C RG = 4.3Ω 7 µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm 1.1 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 7-2005 Rev A 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7614 TYPICAL PERFORMANCE CURVES 40 35 IC, COLLECTOR CURRENT (A) V GE = 15V 90 80 APT20GN60B(G) 15V 14V 13V 12V 11V 10V 9V 8V 30 25 20 15 10 5 0 TJ = 25°C IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 TJ = 125°C TJ = 175°C TJ = -55°C 60 50 40 30 20 10 FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST