APT20GT60BR

APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT™ The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. TO-247 • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C C E G E All Ratings: TC = 25°C unless otherwise specified. APT20GT60BR UNIT 600 600 15 ±20 40 20 80 40 40 175 -55 to 150 300 mJ Watts °C Amps Volts Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 500µA, Tj = 25°C) MIN TYP MAX UNIT 600 -15 3 1.6 4 2.0 5 2.5 2.8 40 1000 ±100 3-2001 052-6210 RevC Volts Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) I CES I GES µA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies C oes Cres Qg Q ge Q gc td(on) tr td(off) tf td(on) tr td(off) tf E on Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20GT60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25°C) VGE = 15V VCC = 0.5VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 1045 110 65 91 5.9 40 9.0 27 112 162 13 1200 160 110 140 10 60 20 50 170 320 26 30 260 220 470 1190 1660 20 30 190 90 1150 uJ S ns uJ ns ns nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150°C 15 170 110 235 595 830 Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25°C VCE = 20V, I C = I C2 12 16 129 45 575 4 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.72 40 0.22 oz gm Package Weight 6.1 10 lb•in N•m Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1.1 3-2001 1 2 3 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25W, L = 200µH, Tj = 25°C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6210 RevC APT20GT60BR 40 IC, COLLECTOR CURRENT (AMPERES) VGE=15, 10 & 9V 8V 30 IC, COLLECTOR CURRENT (AMPERES) 40 VGE=15, 10 & 9V 8V 30 20 7V 20 7V 10 6V 5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25°C) 0 60 250µSec. Pulse Test VGE = 15V 10 6V 5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (T J = 150°C) 80 0 IC, COLLECTOR CURRENT (AMPERES) 50 40 30 20 TC=-55°C TC =+25°C TC=+150°C IC, COLLECTOR CURRENT (AMPERES) OPERATION LIMITED BY VCE (SAT) 100µS 10 5 TC =+25°C TJ =+150°C SINGLE PULSE 1 5 10 50 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area 1 1mS 10 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V 10mS VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 3,000 C ies 1,000 C, CAPACITANCE (pF) 500 f = 1MHz 20 IC = IC2 TJ = +25°C V CE =120V 16 VCE =300V V CE =480V 8 12 C oes 100 50 C res 4 10 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0 ZqJC, THERMAL IMPEDANCE (°C/W) 0.5 D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE 40 80 120 160 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0 0 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10 -5 052-6210 10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 -4 10 RevC 3-2001 APT20GT60BR 4.0 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 40 3.5 3.0 2.5 IC2 2.0 0.5 IC2 1.5 1.0 IC1 30 20 10 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9, Maximum Collector Current vs Case Temperature 1.0 VCC = 0.66 VCES VGE = +15V TJ = +25°C IC = IC2 0 25 1.1 0.8 1 0.6 E off 0.9 0.4 E on 0.2 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10, Breakdown Voltage vs Junction Temperature 2.0 IC1 1.0 0.7 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance .6 SWITCHING ENERGY LOSSES (mJ) .5 .4 E off .3 .2 E on .1 0 VCC = 0.66 VCES VGE = +15V TJ = +125°C RG = 10 W 0 0 TOTAL SWITCHING ENERGY LOSSES (mJ) IC2 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 W -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100 IC, COLLECTOR CURRENT (AMPERES) 0.1 10 20 30 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C Gate drive as specified Power dissapation = 49W ILOAD = IRMS of fundamental 0 10 RevC 3-2001 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 052-6210 APT20GT60BR VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off 90% B 10% t d (on) VC 90% D.U.T. VCE (SAT) 10% tf E on t=2uS E off IC t d(off) 90% A DRIVER* D.U.T. IC 100uH V CLAMP RG A VC B A VC IC 10% tr Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) 90% VGE(on) V CC RL = 2 . 5 VCES I C2 D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry RG VCE(on) 1 Figure 16, Resistive Switching Time Test Circuit and Waveforms T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 052-6210 RevC 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 3-2001 Gate Collector Emitter