APT20M16LLL

APT20M16B2LL APT20M16LLL POWER MOS 7 ® 200V 100A 0.016Ω B2LL R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current 1 7 T-MAX™ TO-264 LLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT20M16B2LL_LLL UNIT Volts Amps 200 @ TC = 25°C 100 400 ±30 ±40 694 5.56 -55 to 150 300 100 50 3000 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 4 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 200 0.016 100 500 ±100 3 5 (VGS = 10V, ID = 50A) Ohms µA nA Volts 6-2004 050-7014 Rev C Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20M16 B2LL_LLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 100A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 100A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 133V, VGS = 15V ID = 100A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 133V, VGS = 15V ID = 100A, RG = 5Ω MIN TYP MAX UNIT 7220 2330 145 140 65 120 15 31 29 4 850 930 935 985 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 100 400 1.3 360 6.7 5 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - ID100A) Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/µs) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 The maximum current is limited by lead temperature 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7014 Rev C 6-2004 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves Junction temp. (°C) RC MODEL 300 250 APT20M16 B2LL_LLL VGS=15V 10V ID, DRAIN CURRENT (AMPERES) 0.0271 0.00899F 9V 200 8.5V 150 100 50 0 8V 7.5V 7V 6.5V Power (watts) 0.0656 0.0210F 0.0859 Case temperature. (°C) 0.293F ID, DRAIN CURRENT (AMPERES) 250 200 150 100 50 0 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @