APT20M20B2LL_04

APT20M20B2LL APT20M20LLL POWER MOS 7 ® 200V 100A 0.020Ω R MOSFET T-MAX™ Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 5 TO-264 • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT20M20B2LL_LLL UNIT Volts Amps 200 100 400 ±30 ±40 568 4.55 -55 to 150 300 100 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 200 0.020 100 500 ±100 3 5 (VGS = 10V, ID = 50A) Ohms µA nA Volts 4-2004 050-7013 Rev D Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT20M20B2LL_LLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 100A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 100A @ 25°C RG = 0.6Ω 7 INDUCTIVE SWITCHING @ 25°C VDD = 130V, VGS = 15V ID = 100A, RG = 5Ω 7 INDUCTIVE SWITCHING @ 125°C VDD = 130V, VGS = 15V ID = 100A, RG = 5Ω MIN TYP MAX UNIT 6850 2180 95 110 43 47 13 40 26 2 465 455 920 915 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 100 400 1.3 284 3.06 5 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - ID100A) Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/µs) Peak Diode Recovery dv/ dt 6 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 0.50mH, RG = 25Ω, Peak IL = 100A 5 The maximum current is limited by lead temperature 6 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 7 Eon includes diode reverse recovery. See figures 18, 20. 0.20 0.9 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 1 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7013 Rev D 4-2004 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 250 VGS =15 &10V 9V 200 APT20M20B2LL_LLL RC MODEL Junction temp. ( ”C) 0.0844 Power (Watts) 0.138 Case temperature 0.218F 0.0124F 150 7.5V 7V 100 6.5 50 6V 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @