APT20M34BLL APT20M34SLL
200V 74A 0.034Ω
POWER MOS 7
®
R
MOSFET
BLL D3PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20M34BLL_SLL UNIT Volts Amps
200 74 296 ±30 ±40 403 3.23 -55 to 150 300 74 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.034 100 500 ±100 3 5
(VGS = 10V, ID = 37A)
Ohms µA nA Volts
9-2004 050-7008 Rev B
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M34BLL_SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 74A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 74A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 133V, VGS = 15V ID = 74A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 133V VGS = 15V ID = 74A, RG = 5Ω
MIN
TYP
MAX
UNIT
3660 1170 60 60 23 26 10 27 25 4 505 395 640 425
MIN TYP MAX UNIT Amps Volts ns µC V/ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr
rr dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
74 296 1.3 160 1.3 5
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = - 74A)
Reverse Recovery Time (IS = -74A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -74A, dl S/dt = 100A/µs) Peak Diode Recovery
dv/ dt 5
Q
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.31 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.470mH, RG = 25Ω, Peak IL = 74A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID74A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.30 0.25
0.9
0.7 0.20 0.15 0.10 0.05 0 10-5 0.5 Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
9-2004
0.3
050-7008 Rev B
0.1 0.05
SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
160 140 120 100 80 60 40 20 0 VGS=10 &15V
APT20M34BLL_SLL
6.5V
RC MODEL Junction temp. (°C) 0.131 Power (watts) 0.180 Case temperature. (°C) 0.161F 0.00789F
ID, DRAIN CURRENT (AMPERES)
6V 5.5V 5V 4.5V 4V
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
120 100 80 60 40 20 0
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
NORMALIZED TO V = 10V @ 37A
GS
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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