APT20M36BLL APT20M36SLL
200V 65A 0.036Ω
BLL D3PAK
TO-247
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT20M36BLL_SLL UNIT Volts Amps
200 65 260 ±30 ±40 329 2.63 -55 to 150 300 65 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.036 100 500 ±100 3 5
(VGS = 10V, ID = 32.5A)
Ohms µA nA Volts
7-2004 050-7007 Rev C
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M36BLL_SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 65A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 65A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 133V, VGS = 15V ID = 65A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 133V VGS = 15V ID = 65A, RG = 5Ω RG = 1.6Ω
MIN
TYP
MAX
UNIT pF
3080 990 70 60 24 26 9 37 16 30 490 300 600 315
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
65 260 1.3 280 3.5 5
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = - 65A)
Reverse Recovery Time (IS = -65A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -65A, dl S/dt = 100A/µs) Peak Diode Recovery
d v/ 6 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.38 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.62mH, RG = 25Ω, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.40
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5
0.9
0.7
0.5
7-2004
Note:
PDM t1 t2
0.3
050-7007 Rev C
0.1 0.05 10-4
SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
200
Junction temp. (°C)
APT20M36BLL_SLL
VGS=15V 10V
ID, DRAIN CURRENT (AMPERES)
RC MODEL
160
0.0329
0.00334F
120
9V
Power (watts)
0.158
0.00802F
80
8V 7.5V
0.189 Case temperature. (°C)
0.165F
40
7V 6.5V 6V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
V NORMALIZED TO = 10V @ I = 32.5A
D
0
140
ID, DRAIN CURRENT (AMPERES)
120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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