APT20M36SFLL

APT20M36BFLL APT20M36SFLL 200V 65A 0.036Ω BFLL D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT20M36BFLL_SFLL UNIT Volts Amps 200 65 260 ±30 ±40 329 2.63 -55 to 150 300 65 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 200 0.036 250 1000 ±100 3 5 (VGS = 10V, ID = 32.5A) Ohms µA nA Volts 7-2004 050-7048 Rev C Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT20M36BFLL_ SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 65A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 65A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 133V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 133V VGS = 15V ID = 65A, RG = 5Ω ID = 65A, RG = 5Ω RG = 1.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 3080 990 70 60 24 26 9 37 16 30 490 300 600 315 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 65 260 1.3 8 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -65A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -65A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -65A, di/dt = 100A/µs) Peak Recovery Current (IS = -65A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 200 300 0.7 2.4 10 18 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.38 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.62mH, RG = 25Ω, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.40 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 7-2004 Note: PDM t1 t2 0.3 050-7048 Rev C 0.1 0.05 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 200 Junction temp. (°C) APT20M36 BFLL_SFLL VGS=15V 10V ID, DRAIN CURRENT (AMPERES) RC MODEL 160 0.0329 0.00334F 120 9V Power (watts) 0.158 0.00802F 80 8V 7.5V 0.189 Case temperature. (°C) 0.165F 40 7V 6.5V 6V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V NORMALIZED TO = 10V @ I = 32.5A D 0 140 ID, DRAIN CURRENT (AMPERES) 120 100 80 60 40 20 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @