APT25GP90BDF1

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT ® TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ® G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 600V, 21A • 50 kHz operation @ 600V, 33A • SSOA Rated E C G E All Ratings: TC = 25°C unless otherwise specified. APT25GP90BDF1 UNIT 900 ±20 ±30 72 36 110 110A @ 900V 417 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 900 3 4.5 3.2 2.7 500 µA nA 7-2004 050-7478 Rev C 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT25GP90BDF1 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 450V I C = 25A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 900V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 25A 4 5 MIN TYP MAX UNIT pF V nC A 2100 220 40 7.5 110 16 47 110 13 16 55 55 TBD 740 370 13 16 95 95 TBD 1120 750 MIN TYP MAX UNIT °C/W gm ns ns Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 44 55 R G = 5Ω TJ = +25°C Turn-on Switching Energy (Diode) 6 µJ Inductive Switching (125°C) VCC = 600V VGE = 15V I C = 25A R G = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) 66 µJ THERMAL AND MECHANICAL CHARACTERISTICS .30 1.18 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7478 Rev C 7-2004 TYPICAL PERFORMANCE CURVES 100 VGE = 15V. 250µs PULSE TEST