APT30GF60JU3

APT30GF60JU3 ISOTOP® Buck chopper NPT IGBT C VCES = 600V IC = 30A @ Tc = 100°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Non Punch Through (NPT) THUNDERBOLT IGBT® G E A · · · - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration E G C A Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Easy paralleling due to positive TC of VCEsat ISOTOPÒ Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD ILM IFAV IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current RG=11Ω Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 100°C TC = 25°C TC = 25°C TC = 25°C TC = 80°C 30 39 A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–8 APT30GF60JU3 – Rev 0 April, 2004 Max ratings 600 58 30 110 ±20 192 60 Unit V A V W A APT30GF60JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 0.25mA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 30A Tj = 125°C VGE = VCE, IC = 700µA VGE = ±20V, VCE = 0V Min 600 Typ Max 40 1000 2.5 2.8 5 ±100 Unit V µA V V nA 3 2.0 2.2 4 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Eoff Ets Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total switching Losses Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 30A Resistive Switching (25°C) VGE = 15V VBus = 300V IC = 30A RG = 10W Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A RG = 10W Inductive Switching (150°C) VGE = 15V VBus = 400V IC = 30A RG = 10W Min Typ 1600 150 90 140 10 60 13 41 147 200 17 28 242 34 1.2 15 27 265 41 0.5 1 1.5 Max 1850 220 150 210 15 90 26 80 220 400 30 60 360 70 2 30 50 400 80 1 2 3 Unit pF nC ns ns mJ ns mJ APT website – http://www.advancedpower.com 2–8 APT30GF60JU3 – Rev 0 April, 2004 APT30GF60JU3 Diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol