APT30GN60B

TYPICAL PERFORMANCE CURVES ® APT30GN60B APT30GN60BG* APT30GN60B(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. G C E TO -2 47 • • • • • 600V Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30GN60B(G) UNIT Volts 600 ±30 63 37 75 75A @ 600V 203 -55 to 175 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 1.7 25 2 6.5 1.9 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor µA nA Ω 7-2005 050-7616 Rev A TBD 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT30GN60B(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 30A TJ = 150°C, R G = 4.3Ω 7, MIN TYP MAX UNIT pF V nC 1750 70 50 9.0 165 10 90 VGE = VGE = 15V Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 600V TJ = 150°C, R G = 4.3Ω 7 Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 30A VCC = 360V, VGE = 15V, 75 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895 A µs ns RG = 4.3Ω 7 TJ = +25°C Turn-on Switching Energy (Diode) 6 µJ Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 30A ns Turn-on Switching Energy (Diode) 66 TJ = +125°C RG = 4.3Ω 7 µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .74 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 7-2005 Rev A 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7616 TYPICAL PERFORMANCE CURVES 90 80 IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST