APT30GP60JDQ1

TYPICAL PERFORMANCE CURVES ® APT30GP60JDQ1 600V APT30GP60JDQ1 POWER MOS 7 IGBT ® E G C E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 400V, 23A • 200 kHz operation @ 400V, 15A • SSOA Rated S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT30GP60JDQ1 UNIT Volts 600 ±20 67 31 120 120A @ 600V 245 -55 to 150 300 Amps @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 500 2 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7452 APT Website - http://www.advancedpower.com Rev A 9-2005 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) µA 3000 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT30GP60JDQ1 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 30A TJ = 150°C, R G = 5Ω, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC 3200 295 20 7.5 90 20 30 120 13 18 55 46 260 335 250 13 18 85 80 260 510 520 750 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 30A RG = 5Ω Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC =400V VGE = 15V I C = 30A RG = 5Ω µJ 330 Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .51 1.7 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7452 Rev A 9-2005 TYPICAL PERFORMANCE CURVES 60 50 TJ = -55°C 60 50 TJ = -55°C APT30GP60JDQ1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 40 30 20 10 0 TJ = 25°C TJ = 125°C 40 30 20 10 0 TJ = 25°C TJ = 125°C 200 180 IC, COLLECTOR CURRENT (A) FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST