APT30M40B2VR APT30M40LVR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout..
B2VR
300V 76A 0.040W
T-MAX™
TO-264
LVR
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular T-MAX™ or TO-264 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT30M40 UNIT Volts Amps
300 76 304 ±30 ±40 520 4.16 -55 to 150 300 76 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
300 76 0.040 25 250 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
050-5541 Rev D 11-2001
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT30M40 B2VR - LVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 0.6W MIN TYP MAX UNIT
8500 1500 390 285 56 120 16 20 48 4
10200 2100 585 425 85 180 32 40 72 8
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
76 304 1.3 530 11.5
(Body Diode) (VGS = 0V, IS = - ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 870µH, R
j
MIN
TYP
MAX
UNIT °C/W
0.24 40
= 25W, Peak IL = 76A
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
G
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 Z JC, THERMAL IMPEDANCE (°C/W) q D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.005 0.01 SINGLE PULSE
PDM
0.01
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-5541 Rev D 11-2001
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT30M40 B2VR - LVR
150 ID, DRAIN CURRENT (AMPERES) VGS=6.5V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 6V 150 VGS=15V 120 VGS=10V VGS=6.5V & 7V 6V
120
90 5.5V 60 5V 30 4.5V 4V 0 0 30 60 90 120 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
90 5.5V 60 5V 30 4.5V 4V 0 1 2 3 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
150 ID, DRAIN CURRENT (AMPERES)
TJ = -55°C TJ = +25°C TJ = +125°C
1.3
V
GS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
120
1.2
90
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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