APT30M61BFLL APT30M61SFLL
300V 54A 0.061Ω
POWER MOS 7
®
R
FREDFET
D3PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT30M61BFLL-SFLL UNIT Volts Amps
300 54 216 ±30 ±40 403 3.23 -55 to 150 300 54 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
300 0.061 250 1000 ±100 3 5
(VGS = 10V, 27A)
Ohms µA nA Volts
1-2004 050-7163 Rev A
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT30M61BFLL - SFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 150V ID = 54A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 150V ID = 54A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 200V, VGS = 15V ID = 54A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 200V VGS = 15V ID = 54A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
3720 920 41 64 23 26 12 20 36 13 367 319 451 348
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns
54 216 1.3 8
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -54A)
d v/ 5 dt
t rr
Reverse Recovery Time (IS = -54A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -54A, di/dt = 100A/µs) Peak Recovery Current (IS = -54A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient
225 400 1.0 4.2 10 20
TYP MAX
Q rr IRRM
µC
Amps
THERMAL CHARACTERISTICS
Symbol RθJC RθJA UNIT °C/W
0.31 40
4 Starting Tj = +25°C, L = 0.89mH, RG = 25Ω, Peak IL = 54A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID54A di/dt ≤ 700A/µs VR ≤ 300 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.35
Z JC, THERMAL IMPEDANCE (°C/W) θ
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30 0.25
0.9
0.7 0.20 0.5 0.15 0.10 0.05 0 0.3 Note:
PDM t1 t2
050-7163 Rev A
1-2004
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-3
10-2
1.0
Typical Performance Curves
180 160
ID, DRAIN CURRENT (AMPERES)
APT30M61BFLL - SFLL
15V 10V
140 120 100 80 60 40 20 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 7V 6V 8V 9V
RC MODEL Junction temp. (°C) 0.119 Power (watts) 0.191 Case temperature. (°C) 0.319F 0.0135F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
160 140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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